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31. 发明申请

US20100216268A1 MANUFACTURING METHOD OF A SEMICONDUCTOR ELEMENT 失效
标题翻译：半导体元件的制造方法
公开(公告)号：US20100216268A1
公开(公告)日：2010-08-26
申请号：US12539355
申请日：2009-08-11
申请人： Koji Katayama , Hiroyuki Kitabayashi , Satoshi Arakawa
发明人： Koji Katayama , Hiroyuki Kitabayashi , Satoshi Arakawa
IPC分类号： H01L21/00
CPC分类号： H01L21/3081 , H01L21/32139
摘要： A method of manufacturing a semiconductor element of good characteristics at a reduced manufacturing cost is provided. The manufacturing method of the semiconductor element includes a GaN-containing semiconductor layer forming step, an electrode layer forming step, a step of forming an Al film on the GaN-containing semiconductor layer, a step of forming a mask layer made of a material of which etching rate is smaller than that of a material of the Al film, a step of forming a ridge portion using the mask layer as a mask, a step of retreating a position of a side wall of the Al film with respect to a position of a side wall of the mask layer, a step of forming, on the side surface of the ridge portion and the top surface of the mask layer, a protective film made of a material of which etching rate is smaller than that of the material forming the Al film, and a step of removing the Al film and thereby removing the mask layer and a portion of the protective film formed on the top surface of the mask layer.
摘要翻译：提供一种以降低的制造成本制造具有良好特性的半导体元件的方法。半导体元件的制造方法包括含GaN半导体层形成工序，电极层形成工序，在含GaN半导体层上形成Al膜的工序，形成掩模层的工序，该蚀刻速率小于Al膜的材料的蚀刻速率，使用该掩模层作为掩模形成脊部的步骤，相对于Al膜的位置退回Al膜的侧壁的位置的步骤掩模层的侧壁，在脊部的侧表面和掩模层的顶表面上形成保护膜，该保护膜的蚀刻速率小于形成该掩模层的材料的蚀刻速率的材料 Al膜，以及除去Al膜，从而除去掩模层和形成在掩模层的顶表面上的保护膜的一部分的步骤。

32. 发明授权

US07491974B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US07491974B2
公开(公告)日：2009-02-17
申请号：US11365642
申请日：2006-02-28
申请人： Youichi Nagai , Koji Katayama , Hiroyuki Kitabayashi
发明人： Youichi Nagai , Koji Katayama , Hiroyuki Kitabayashi
IPC分类号： H01L27/15
CPC分类号： H01L33/22 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/44 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/3011 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting device is equipped with a GaN substrate; an n-type AlxGa1-xN layer on a first main surface side of the GaN substrate; a p-type AlxGa1-xN layer positioned further away from the GaN substrate than the n-type AlxGa1-xN layer; and a multi-quantum well (MQW) positioned between the n-type AlxGa1-xN layer and the p-type AlxGa1-xN layer. In the light-emitting device, the p-type AlxGa1-xN layer side is down-mounted and light is emitted from a second main surface, which is the main surface opposite from the first main surface of the GaN substrate. The second main surface of the GaN substrate includes a region on which cavities and projections are formed. Also, the light-emitting device includes an n-electrode formed on the second main surface of the GaN substrate 1 and a protective film formed to cover the side wall of the n-electrode.
摘要翻译：发光装置配备有GaN衬底; 在GaN衬底的第一主表面侧上的n型Al x Ga 1-x N层; 位于比n型Al x Ga 1-x N层更远离GaN衬底的p型Al x Ga 1-x N层; 以及位于n型Al x Ga 1-x N层和p型Al x Ga 1-x N层之间的多量子阱（MQW）。在发光器件中，p型Al x Ga 1-x N层侧被下放，并且从作为与GaN衬底的第一主表面相对的主表面的第二主表面发射光。 GaN衬底的第二主表面包括形成空腔和突起的区域。此外，发光器件包括形成在GaN衬底1的第二主表面上的n电极和形成为覆盖n电极的侧壁的保护膜。

33. 发明申请

US20060273334A1 Light emitting device, method for making the same, and nitride semiconductor substrate 有权
标题翻译：发光元件及其制造方法以及氮化物半导体基板
公开(公告)号：US20060273334A1
公开(公告)日：2006-12-07
申请号：US11362407
申请日：2006-02-24
申请人： Youichi Nagai , Koji Katayama , Hiroyuki Kitabayashi
发明人： Youichi Nagai , Koji Katayama , Hiroyuki Kitabayashi
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/32 , H01L2224/48091 , H01L2224/73265 , H01L2924/01012 , H01L2924/01079 , H01L2924/12041 , H01L2924/00014
摘要： A light-emitting device according to the present invention includes: a GaN substrate 1; a n-type AlxGa1-xN layer 3 on a first main surface side of the GaN substrate 1; a p-type AlxGa1-xN layer 5 positioned further away from the GaN substrate 1 compared to the n-type AlxGa1-xN layer 3; a multi-quantum well (MQW) 4 positioned between the n-type AlxGa1-xN layer 3 and the p-type AlxGa1-xN layer 5. In this light-emitting device, the p-type AlxGa1-xN layer 5 side is down-mounted and light is emitted from the second main surface 1a, which is the main surface of the GaN substrate 1 opposite from the first main surface. Hemispherical projections 82 are formed on the second main surface 1a of the GaN substrate 1.
摘要翻译：根据本发明的发光器件包括：GaN衬底1; 在GaN衬底1的第一主表面侧上的n型Al x Ga 1-x N层3; 位于更远离GaN衬底1的p型Al x Ga 1-x N层5与n型Al x N层5相比较， Ga 1-x N层3; 位于n型Al x Ga 1-x N层3和p型Al x N层3之间的多量子阱（MQW）4， SUB＆gt; Ga 1-x N层5。在该发光器件中，p型Al x Ga 1-x N层5侧被下放，并且从第二主表面1a发射光，其是与第一主表面相对的GaN衬底1的主表面。在GaN衬底1的第二主表面1a上形成半球形突起82。

34. 发明申请

US20060157717A1 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US20060157717A1
公开(公告)日：2006-07-20
申请号：US11311638
申请日：2005-12-20
申请人： Youichi Nagai , Hiroyuki Kitabayashi , Hirohisa Saito , Ayako Ikeda
发明人： Youichi Nagai , Hiroyuki Kitabayashi , Hirohisa Saito , Ayako Ikeda
IPC分类号： H01L33/00
CPC分类号： H01L33/025 , H01L33/22 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/8592 , H01L2924/00011 , H01L2924/10155 , H01L2924/10253 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/20752 , H01L2924/2076 , H01L2924/01049 , H01L2924/01004 , H01L2924/01005
摘要： A light emitting device having a simple structure that can be easily manufactured, attaining high light emitting efficiency stably for a long time is obtained, which light emitting device includes: a GaN substrate as a nitride semiconductor substrate and, on a first main surface of the nitride semiconductor substrate, an n-type AlxGa1-xN layer, a p-type AlxGa1-xN layer positioned further than the n-type AlxGa1-xN layer viewed from the nitride semiconductor substrate, and a quantum well positioned between the n-type AlxGa1-xN layer and the p-type AlxGa1-xN layer. In the light emitting device, specific resistance of the nitride semiconductor substrate is at most 0.5 Ω·cm, the side of p-type AlxGa1-xN layer is mounted face-down, and the light is emitted from the second main surface 1a that is opposite to the first main surface of the nitride semiconductor substrate. The second main surface 1a of nitride semiconductor substrate has trenches formed therein.
摘要翻译：获得具有简单结构的发光器件，其可以容易地制造，长时间稳定地获得高发光效率，该发光器件包括：GaN衬底作为氮化物半导体衬底，并且在第一主表面上氮化物半导体衬底，n型Al x Ga 1-x N层，p型Al x Ga 1-x N层， x N层比从氮化物半导体衬底观察到的n型Al x Ga 1-x N层更远，并且位于 n型Al x Ga 1-x N层和p型Al x Ga 1-x N层，以及p型Al x Ga 1-x N层， N层。在发光器件中，氮化物半导体衬底的比电阻为0.5Ω·cm以下，p型Al x Ga 1-x N层的一侧为并且从与氮化物半导体衬底的第一主表面相对的第二主表面1a发射光。氮化物半导体衬底的第二主表面1a具有形成在其中的沟槽。

35. 发明授权

US5367902A Metal sheet bending machine 失效
标题翻译：金属折弯机
公开(公告)号：US5367902A
公开(公告)日：1994-11-29
申请号：US30467
申请日：1993-04-05
申请人： Hiroyuki Kitabayashi , Yoshiaki Kuroda , Ikuo Kamada
发明人： Hiroyuki Kitabayashi , Yoshiaki Kuroda , Ikuo Kamada
IPC分类号： B21D5/02 , G01B11/26 , B21C51/00
CPC分类号： G01B11/26 , B21D5/02
摘要： A metal sheet bending machine for bending a metal sheet inserted between an upper bender and lower bender to a desired angle. While the metal sheet is being bent to the desired angle, a linear image of projected measuring light, which rotates with a change in time bending angle of the metal sheet, is formed by a measuring light source on an outer face of the bent metal sheet and sequentially photographed and stored. Based on the stored images, the bending angle of the metal sheet is calculated. Based on the result of the calculation, the positions of the upper and/or lower benders are controlled whereby the metal sheet can be bent to the desired angle. The bending angle of the metal sheet may be obtained based on the rotating angle of the linear image of projected measuring light formed on the photographed images, or based on an angle formed by the linear image of projected measuring light and a linear image of projected reference light formed by a reference light source for projecting light onto the outer face of the metal sheet while the metal sheet is being bent to the desired angle so as to form the linear image at a desired fixed angle irrespective of the bending angle.
摘要翻译： PCT No.PCT / JP91 / 01349 Sec。 371日期：1993年4月5日 102（e）日期1994年4月5日PCT 1991年10月4日PCT PCT。出版物WO92 / 05892 日期：1992年4月16日。一种用于将插入在上弯曲机和下弯曲机之间的金属板弯曲到所需角度的金属板弯曲机。当金属片被弯曲到所需的角度时，通过测量光源在弯曲的金属片的外表面上形成随着金属片的时间弯曲角度的变化而旋转的投射的测量光的线性图像并依次拍摄并存储。基于所存储的图像，计算金属板的弯曲角度。基于计算的结果，控制上部和/或下部弯曲器的位置，从而可以将金属板弯曲到期望的角度。金属片的弯曲角度可以基于在拍摄图像上形成的投影测量光的线性图像的旋转角度，或者基于由投影的测量光的线性图像和投影的参考线的图像形成的角度来获得由参考光源形成的光，用于在金属片被弯曲到所需角度的同时将光投射到金属片的外表面上，以便形成所需的固定角度的线性图像，而与弯曲角无关。

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