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31. 发明授权

US08525070B2 Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device 有权
标题翻译：激光照射装置，激光照射方法以及半导体装置的制造方法
公开(公告)号：US08525070B2
公开(公告)日：2013-09-03
申请号：US11639416
申请日：2006-12-15
申请人： Koichiro Tanaka , Yoshiaki Yamamoto
发明人： Koichiro Tanaka , Yoshiaki Yamamoto
IPC分类号： B23K26/08 , H01L21/324
CPC分类号： H01L27/1266 , B23K26/06 , B23K26/0624 , B23K26/064 , B23K26/0643 , B23K26/0652 , B23K26/0665 , B23K26/0823 , B23K26/0838 , B23K26/0869 , B23K26/0892 , B23K26/1438 , B23K26/38 , B23K26/40 , B23K2101/40 , B23K2103/50 , H01L21/02675 , H01L21/2026 , H01L27/1285 , H01L27/1292 , H01L29/42384 , H01L29/4908
摘要： A laser irradiation apparatus is provided with a laser oscillator, an articulated beam propagator in which a plurality of pipes are connected to each other in an articulated portion, and a course change means of a laser beam in the articulated portion. At least one pipe of the plurality of pipes includes a transfer lens for suppressing stagger of a laser beam in a traveling direction, in each pipe. The articulated portion produces degree of freedom in disposition of a laser oscillator, and the transfer lens enables suppression of change in beam profile.
摘要翻译：激光照射装置设置有激光振荡器，铰接光束传播器，其中多个管道在铰接部分中彼此连接，并且铰接部分中的激光束的行程改变装置。多个管道中的至少一个管道包括用于在每个管道中抑制在行进方向上交错的激光束的转移透镜。关节部分在激光振荡器的配置中产生自由度，并且转印透镜能够抑制光束轮廓的变化。

32. 发明授权

US07777210B2 Laser irradiation method in which a distance between an irradiation object and an optical system is controlled by an autofocusing mechanism and method for manufacturing semiconductor device using the same 有权
标题翻译：通过自动聚焦机构控制照射对象与光学系统之间的距离的激光照射方法及使用其的半导体装置的制造方法
公开(公告)号：US07777210B2
公开(公告)日：2010-08-17
申请号：US12480984
申请日：2009-06-09
申请人： Koichiro Tanaka , Yoshiaki Yamamoto
发明人： Koichiro Tanaka , Yoshiaki Yamamoto
IPC分类号： G01N21/86
CPC分类号： H01L21/02686 , B23K26/04 , B23K26/0738 , H01L21/02532 , H01L21/02689 , H01L21/2026 , H01L21/268 , H01L27/1285
摘要： The present invention is to provide a laser irradiation method for performing homogeneous laser irradiation to the irradiation object even when the thickness of the irradiation object is not even. In the case of irradiating the irradiation object having uneven thickness, the laser irradiation is performed while keeping the distance between the irradiation object and the lens for condensing the laser beam on the surface of the irradiation object constant by using an autofocusing mechanism. In particular, when the irradiation object is irradiated with the laser beam by moving the irradiation object relative to the laser beam in the first direction and the second direction of the beam spot formed on the irradiation surface, the distance between the irradiation object and the lens is controlled by the autofocusing mechanism before the irradiation object is moved in the first and second directions.
摘要翻译：本发明提供一种激光照射方法，即使在照射物体的厚度不均匀的情况下也能够对照射物进行均匀的激光照射。在照射具有不均匀厚度的照射物体的情况下，通过使用自动聚焦机构，在照射物体和透镜之间的距离保持在照射物体的表面上恒定的同时，进行激光照射。特别地，当通过在照射表面上形成的第一方向和束点的第二方向上相对于激光束照射被照射物体照射激光束时，照射物体与透镜之间的距离在照射对象沿第一和第二方向移动之前由自动对焦机构控制。

33. 发明授权

US07486706B2 Laser irradiation apparatus, laser irradiation method and method for manufacturing semiconductor device 有权
公开(公告)号：US07486706B2
公开(公告)日：2009-02-03
申请号：US10997868
申请日：2004-11-29
申请人： Koichiro Tanaka , Yoshiaki Yamamoto
发明人： Koichiro Tanaka , Yoshiaki Yamamoto
IPC分类号： H01S3/10
摘要： The object of the present invention is to provide a laser irradiation apparatus being able to enlarge the beam spot to a large degree compared with that of the CW laser, to suppress the thermal damage to the glass substrate, and to form an aggregation of crystal grains including a single crystal extending long in a scanning direction by growing the crystal continuously in the scanning direction. The laser irradiation of the present invention comprises a pulsed laser oscillator, a non-linear optical element for converting the wavelength of the laser light emitted from the pulsed laser oscillator, and an optical system for condensing the laser light whose wavelength is converted on a semiconductor film, wherein the pulsed laser oscillator has a repetition rate in the range of 10 MHz to 100 GHz.

34. 发明申请

US20070178672A1 Laser irradiation method, laser irradiation apparatus and method for manufacturing semiconductor device 有权
标题翻译：激光照射方法，激光照射装置以及半导体装置的制造方法
公开(公告)号：US20070178672A1
公开(公告)日：2007-08-02
申请号：US10584729
申请日：2005-10-18
申请人： Koichiro Tanaka , Yoshiaki Yamamoto
发明人： Koichiro Tanaka , Yoshiaki Yamamoto
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02683 , B23K26/0736 , B23K26/0738 , B23K26/0853 , H01L21/02422 , H01L21/02532 , H01L21/02686 , H01L21/2026 , H01L21/268 , H01L27/1255 , H01L27/1266 , H01L27/1285 , H01L27/1296 , H01L29/78621 , H01L29/78648 , Y10T117/1076
摘要： In conducting laser annealing using a CW laser or a quasi-CW laser, productivity is not high as compared with an excimer laser and thus, it is necessary to further enhance productivity. According to the present invention, a fundamental wave is used without putting laser light into a non linear optical element, and laser annealing is conducted by irradiating a semiconductor thin film with pulsed laser light having a high repetition rate. A laser oscillator having a high output power can be used for laser annealing, since a non linear optical element is not used and thus light is not converted to a harmonic. Therefore, the width of a region having large grain crystals that is formed by scanning once can be increased, and thus the productivity can be enhanced dramatically.
摘要翻译：在使用CW激光或准CW激光进行激光退火时，与准分子激光相比，生产率不高，因此有必要进一步提高生产率。根据本发明，使用基波而不将激光投射到非线性光学元件中，并且通过用具有高重复率的脉冲激光照射半导体薄膜来进行激光退火。具有高输出功率的激光振荡器可用于激光退火，因为不使用非线性光学元件，因此光不转换成谐波。因此，可以增加通过扫描一次形成的具有大晶粒的区域的宽度，从而可以显着提高生产率。

35. 发明申请

US20070139660A1 Laser irradiation apparatus and laser irradiation method and method for manufacturing semiconductor device 有权
标题翻译：激光照射装置及激光照射方法及半导体装置的制造方法
公开(公告)号：US20070139660A1
公开(公告)日：2007-06-21
申请号：US11640394
申请日：2006-12-18
申请人： Koichiro Tanaka , Yoshiaki Yamamoto
发明人： Koichiro Tanaka , Yoshiaki Yamamoto
IPC分类号： G01B11/14
CPC分类号： B23K26/0853 , B23K26/04 , B23K26/0738 , G03F9/7088 , H01L21/02675 , H01L21/2026
摘要： The present invention provides a laser irradiation apparatus and a laser irradiation method which can conduct irradiation of a laser beam accurately by correcting misalignment of an irradiation position of the laser beam from the predetermined position due to temperature change. A laser irradiation apparatus includes a laser oscillator emitting a laser beam; an XY stage provided with an irradiation object; an optical system which shapes the laser beam into a linear beam on a surface of the irradiation object provided on the XY stage; an illumination which emits light to the surface of the irradiation object; and a camera for imaging reflected light of the light on the surface of the irradiation object, in which misalignment of an irradiation position of the linear beam detected from the reflected light imaged by the camera is corrected.
摘要翻译：本发明提供一种激光照射装置和激光照射方法，该激光照射装置和激光照射方法能够通过校正由于温度变化导致的来自预定位置的激光束的照射位置的偏移而精确地进行激光束的照射。激光照射装置包括发射激光束的激光振荡器; 设置有照射物体的XY台阶; 光学系统，其将激光束成形为设置在XY台上的照射物体的表面上的线性光束; 对照射物体的表面发光的照明; 以及用于对照射物体的表面上的光的反射光进行成像的相机，其中从由照相机成像的反射光检测到的线性光束的照射位置的未对准被校正。

36. 发明申请

US20050237895A1 Laser irradiation apparatus and method for manufacturing semiconductor device 审中-公开
标题翻译：激光照射装置及半导体装置的制造方法
公开(公告)号：US20050237895A1
公开(公告)日：2005-10-27
申请号：US11101481
申请日：2005-04-08
申请人： Koichiro Tanaka , Yoshiaki Yamamoto
发明人： Koichiro Tanaka , Yoshiaki Yamamoto
IPC分类号： B23K26/073 , B23K26/08 , G11B7/08 , H01L21/20 , H01L21/268 , H01L21/324 , H01L21/77 , H01L27/32 , H01L51/52
CPC分类号： H01L21/02683 , B23K26/0738 , B23K26/082 , B23K26/0821 , B23K26/0853 , H01L21/02532 , H01L21/02672 , H01L21/02686 , H01L21/02691 , H01L21/268 , H01L27/1285 , H01L27/3244 , H01L27/3295 , H01L51/5253
摘要： It is an object of the present invention to provide a laser irradiation apparatus being able to irradiate the irradiation object with the laser beam having homogeneous energy density without complicating the optical system. The laser irradiation apparatus of the present invention comprises a laser oscillator, an optical system for scanning repeatedly a beam spot of the laser beam emitted from the laser oscillator in a uniaxial direction over the surface of the irradiation object, and a position controlling means for moving the position of the irradiation object relative to the laser beam in a direction perpendicular to the uniaxial direction.
摘要翻译：本发明的目的是提供一种激光照射装置，其能够用具有均匀能量密度的激光束照射照射物体，而不会使光学系统复杂化。本发明的激光照射装置包括激光振荡器，用于在照射物体的表面上沿单轴方向重复扫描从激光振荡器发射的激光束的光点的光学系统，以及用于移动的位置控制装置照射对象相对于激光束在垂直于单轴方向的方向上的位置。

37. 发明授权

US08188402B2 Laser treatment apparatus, laser treatment method, and manufacturing method of semiconductor device 有权
标题翻译：激光治疗装置，激光治疗方法及半导体装置的制造方法
公开(公告)号：US08188402B2
公开(公告)日：2012-05-29
申请号：US12153646
申请日：2008-05-22
申请人： Koichiro Tanaka , Yoshiaki Yamamoto , Takatsugu Omata
发明人： Koichiro Tanaka , Yoshiaki Yamamoto , Takatsugu Omata
IPC分类号： B23K26/02
CPC分类号： H01L21/02683 , B23K26/0853 , B23K2101/40 , H01L21/02686 , H01L21/2026 , H01L27/1285
摘要： The invention relates to a laser treatment apparatus including a laser oscillator, an interlock provided in the laser oscillator, a movable table which moves with a certain movement period, a timer, an interlock provided in the timer, a sensor which can detect movement of the movable table, and a computer, in which the timer starts measuring time when the sensor senses passage of the movable table, and when the movable table does not pass the sensor even after the movement period, conduction between contacts of the interlock provided in the timer is blocked to operate the interlock in the laser oscillator, thereby stopping laser output. The invention also relates to a laser treatment method using the laser treatment apparatus.
摘要翻译：本发明涉及一种激光治疗装置，包括激光振荡器，设置在激光振荡器中的联锁装置，以一定运动周期移动的可移动工作台，定时器，定时器中设置的互锁装置，能够检测活动台和计算机，其中定时器开始测量时间，当传感器感测到可移动台的通过时，并且当移动台甚至在移动时段之后也不通过传感器时，设置在定时器中的互锁装置的触点之间的传导被阻止在激光振荡器中操作互锁，从而停止激光输出。本发明还涉及使用激光治疗装置的激光治疗方法。

38. 发明授权

US07695985B2 Light exposure apparatus and manufacturing method of semiconductor device using the same 失效
标题翻译：曝光装置及使用其的半导体装置的制造方法
公开(公告)号：US07695985B2
公开(公告)日：2010-04-13
申请号：US10582616
申请日：2005-12-21
申请人： Koichiro Tanaka , Yoshiaki Yamamoto
发明人： Koichiro Tanaka , Yoshiaki Yamamoto
IPC分类号： H01L21/66
CPC分类号： H01L21/02675 , G03F7/70383 , H01L21/2026 , H01L21/268 , H01L27/1266 , H01L27/1285 , Y10T29/41
摘要： When annealing of a semiconductor film is conducted using a plurality of lasers, each of the distances between laser irradiation regions is different. When a lithography step is conducted in accordance with a marker which is formed over a substrate in advance after the step, light-exposure is not correctly conducted to a portion crystallized by laser. By using a laser irradiation region obtained on a laser irradiation step as a marker, light-exposure is conducted by making a light-exposure position of a stepper coincide with a large grain size region in the laser irradiation region. A large grain size region and a poorly crystalline region are detected by utilizing a thing that scattering intensity of light is different between the large grain size region and the poorly crystalline region, thereby determining a light-exposure position.
摘要翻译：当使用多个激光器进行半导体膜的退火时，激光照射区域之间的距离各不相同。当根据在步骤之后预先在衬底上形成的标记进行光刻步骤时，曝光不能正确地传导到通过激光结晶的部分。通过使用在激光照射步骤中获得的激光照射区域作为标记，通过使激光照射区域中的步进曝光位置与大粒径区域一致来进行曝光。通过利用在大晶粒尺寸区域和不良结晶区域之间的散射光强度不同的物质来检测大晶粒尺寸区域和不良结晶区域，从而确定曝光位置。

39. 发明授权

US07608527B2 Laser irradiation method and method for manufacturing crystalline semiconductor film 有权
标题翻译：激光照射方法及制造结晶半导体膜的方法
公开(公告)号：US07608527B2
公开(公告)日：2009-10-27
申请号：US11017900
申请日：2004-12-22
申请人： Koichiro Tanaka , Yoshiaki Yamamoto
发明人： Koichiro Tanaka , Yoshiaki Yamamoto
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02686 , B23K26/0622 , B23K26/0732 , B23K26/0736 , C30B1/00 , C30B13/24 , C30B29/06 , H01L21/02532 , H01L21/2026 , H01L27/1285 , H01L29/66757
摘要： Even when the laser irradiation is performed under the same condition with the energy distribution of the beam spot shaped as appropriate, the energy given to the irradiated surface is not yet homogeneous. When a semiconductor film is crystallized to form a crystalline semiconductor film using such inhomogeneous irradiation energy, the crystallinity becomes inhomogeneous in this film, and the characteristic of semiconductor elements manufactured using this film varies. In the present invention, an irradiated object formed over a substrate is irradiated with a laser beam having the pulse width that is an order of picosecond (10−12 second) or less.
摘要翻译：即使当在相同条件下进行激光照射，并且适当地形成束斑的能量分布时，给予照射表面的能量还不均匀。当使用这种不均匀的照射能量使半导体膜结晶以形成晶体半导体膜时，该膜中的结晶度变得不均匀，并且使用该膜制造的半导体元件的特性变化。在本发明中，用脉冲宽度为微秒级（10-12秒）以下的激光照射在基板上形成的照射物体。

40. 发明授权

US07551655B2 Laser irradiation apparatus, laser irradiation method and method for manufacturing semiconductor device 有权
标题翻译：激光照射装置，激光照射方法及半导体装置的制造方法
公开(公告)号：US07551655B2
公开(公告)日：2009-06-23
申请号：US10997868
申请日：2004-11-29
申请人： Koichiro Tanaka , Yoshiaki Yamamoto
发明人： Koichiro Tanaka , Yoshiaki Yamamoto
IPC分类号： H01S3/10
CPC分类号： H01L21/02686 , B23K26/0622 , B23K26/064 , B23K26/0643 , B23K26/0648 , B23K26/0665 , B23K26/0853 , H01L21/02691 , H01L21/2026
摘要： The object of the present invention is to provide a laser irradiation apparatus being able to enlarge the beam spot to a large degree compared with that of the CW laser, to suppress the thermal damage to the glass substrate, and to form an aggregation of crystal grains including a single crystal extending long in a scanning direction by growing the crystal continuously in the scanning direction. The laser irradiation of the present invention comprises a pulsed laser oscillator, a non-linear optical element for converting the wavelength of the laser light emitted from the pulsed laser oscillator, and an optical system for condensing the laser light whose wavelength is converted on a semiconductor film, wherein the pulsed laser oscillator has a repetition rate in the range of 10 MHz to 100 GHz.
摘要翻译：本发明的目的是提供一种能够与CW激光相比大幅度地扩大光束点的激光照射装置，以抑制对玻璃基板的热损伤，并且形成晶粒的聚集体包括通过在扫描方向上连续地生长晶体而沿扫描方向长延伸的单晶。本发明的激光照射包括脉冲激光振荡器，用于转换从脉冲激光振荡器发射的激光的波长的非线性光学元件，以及用于会聚在半导体上波长被转换的激光的光学系统膜，其中所述脉冲激光振荡器具有在10MHz至100GHz范围内的重复频率。

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