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31. 发明申请

US20100059110A1 MICROCRYSTALLINE SILICON ALLOYS FOR THIN FILM AND WAFER BASED SOLAR APPLICATIONS 审中-公开
标题翻译：薄膜和薄膜太阳能应用的微晶硅合金
公开(公告)号：US20100059110A1
公开(公告)日：2010-03-11
申请号：US12208478
申请日：2008-09-11
申请人： Shuran Sheng , Yong-Kee Chae
发明人： Shuran Sheng , Yong-Kee Chae
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： C23C16/5096 , C23C16/325 , H01L31/076 , H01L31/077 , H01L31/1804 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A method and apparatus for forming solar cells is provided. Doped crystalline semiconductor alloys including carbon, oxygen, and nitrogen are used as charge collection layers for thin-film solar cells. The semiconductor alloy layers are formed by providing semiconductor source compound and a co-component source compound to a processing chamber and ionizing the gases to deposit a layer on a substrate. The alloy layers provide improved control of refractive index, wide optical bandgap, high conductivity, and resistance to attack by oxygen.
摘要翻译：提供一种用于形成太阳能电池的方法和装置。包括碳，氧和氮的掺杂结晶半导体合金被用作薄膜太阳能电池的电荷收集层。半导体合金层通过向处理室提供半导体源化合物和共组分源化合物形成，并使气体离子化以在衬底上沉积一层。合金层提供了改进的折射率控制，宽的光学带隙，高导电性和抗氧化性。

32. 发明申请

US20100051098A1 HIGH QUALITY TCO-SILICON INTERFACE CONTACT STRUCTURE FOR HIGH EFFICIENCY THIN FILM SILICON SOLAR CELLS 有权
标题翻译：高性能TCO硅界面接触结构，用于高效薄膜硅太阳能电池
公开(公告)号：US20100051098A1
公开(公告)日：2010-03-04
申请号：US12481175
申请日：2009-06-09
申请人： Shuran Sheng , Yong Kee Chae , Stefan Klein , Amir Al-Bayati , Bhaskar Kumar
发明人： Shuran Sheng , Yong Kee Chae , Stefan Klein , Amir Al-Bayati , Bhaskar Kumar
IPC分类号： H01L31/00 , H01L31/18
CPC分类号： H01L31/076 , C23C16/24 , H01L31/022466 , H01L31/022483 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A method and apparatus for forming solar cells is provided. In one embodiment, a photovoltaic device includes a first TCO layer disposed on a substrate, a second TCO layer disposed on the first TCO layer, and a p-type silicon containing layer formed on the second TCO layer. In another embodiment, a method of forming a photovoltaic device includes forming a first TCO layer on a substrate, forming a second TCO layer on the first TCO layer, and forming a first p-i-n junction on the second TCO layer.
摘要翻译：提供一种用于形成太阳能电池的方法和装置。在一个实施例中，光伏器件包括设置在衬底上的第一TCO层，设置在第一TCO层上的第二TCO层和形成在第二TCO层上的p型含硅层。在另一个实施例中，形成光伏器件的方法包括在衬底上形成第一TCO层，在第一TCO层上形成第二TCO层，以及在第二TCO层上形成第一p-i-n结。

33. 发明申请

US20080153280A1 REACTIVE SPUTTER DEPOSITION OF A TRANSPARENT CONDUCTIVE FILM 审中-公开
标题翻译：透明导电膜的反应性溅射沉积
公开(公告)号：US20080153280A1
公开(公告)日：2008-06-26
申请号：US11614461
申请日：2006-12-21
申请人： Yanping Li , Yan Ye , Yong-Kee Chae , Tae Kyung Won , Ankur Kadam , Shuran Sheng , Liwei Li
发明人： Yanping Li , Yan Ye , Yong-Kee Chae , Tae Kyung Won , Ankur Kadam , Shuran Sheng , Liwei Li
IPC分类号： H01L21/44
CPC分类号： C23C14/086 , C23C14/0073 , H01L31/022466 , H01L31/1884 , Y02E10/50
摘要： Methods for sputter depositing a transparent conductive oxide (TCO) layer are provided in the present invention. The transparent conductive oxide layer may be utilized as a back reflector in a photovoltaic device. In one embodiment, the method includes providing a substrate in a processing chamber, forming a first portion of a transparent conductive oxide layer on the substrate by a first sputter deposition step, and forming a second portion of the transparent conductive oxide layer by a second sputter deposition step.
摘要翻译：在本发明中提供溅射沉积透明导电氧化物（TCO）层的方法。透明导电氧化物层可以用作光伏器件中的后反射器。在一个实施例中，该方法包括在处理室中提供衬底，通过第一溅射沉积步骤在衬底上形成透明导电氧化物层的第一部分，以及通过第二溅射形成透明导电氧化物层的第二部分沉积步骤。

34. 发明申请

US20110263074A1 APPARATUS AND METHODS FOR REDUCING LIGHT INDUCED DAMAGE IN THIN FILM SOLAR CELLS 审中-公开
标题翻译：用于减少薄膜太阳能电池中的光诱导损伤的装置和方法
公开(公告)号：US20110263074A1
公开(公告)日：2011-10-27
申请号：US12765458
申请日：2010-04-22
申请人： Amir Al-Bayati , Yong K. Chae , Shuran Sheng , Bhaskar Kumar , Eran Valfer
发明人： Amir Al-Bayati , Yong K. Chae , Shuran Sheng , Bhaskar Kumar , Eran Valfer
IPC分类号： H01L31/18
CPC分类号： H01L31/202 , C23C16/24 , C23C16/505 , H01L21/02532 , H01L21/0262 , H01L31/03767 , Y02E10/50 , Y02P70/521
摘要： Apparatus and methods for forming a silicon-containing i-layer on a substrate for a thin film photovoltaic cell are disclosed. The apparatus includes a chamber body defining a processing region containing the substrate, a hydrogen source and a silane source coupled to a plasma generation region, an RF power source that applies power at a power level in the plasma generation region to generate a plasma and deposit the silicon-containing i-layer at a selected deposition rate to a selected thickness and a controller. The controller controls the power level and the deposition rate of the i-layer on the substrate such that the thin film solar cell exhibits light induced damage that conforms to a linear fit of the product of the RF power, the deposition rate and the selected thickness of the i-layer. In accordance with further aspects of the present invention, the controller controls the RF power and the deposition rate so that a product (x) of the RF power in watts, the deposition rate of the i-layer in nm per min and the thickness of the i-layer in nm is less than a predetermined number y and satisfies the equation y=5E11*x+3.3749 plus or minus a margin.
摘要翻译：公开了一种在用于薄膜光伏电池的衬底上形成含硅i层的设备和方法。该装置包括限定包含衬底的处理区域，氢源和耦合到等离子体产生区域的硅烷源的室主体，在等离子体产生区域中以功率电平施加功率以产生等离子体和沉积物的RF电源将所选择的沉积速率的含硅i层以选定的厚度和控制器进行。控制器控制i层在基板上的功率水平和沉积速率，使得薄膜太阳能电池呈现符合RF功率，沉积速率和所选厚度的产品的线性拟合的光诱导损伤的i层。根据本发明的另外的方面，控制器控制RF功率和沉积速率，使得RF功率的乘积（x）以瓦为单位，i层的沉积速率（nm / min）和 i层的nm小于预定数量y，并且满足等式y = 5E11 * x + 3.3749加或减边缘。

35. 发明申请

US20130199606A1 METHODS OF MANUFACTURING BACK SURFACE FIELD AND METALLIZED CONTACTS ON A SOLAR CELL DEVICE 审中-公开
标题翻译：在太阳能电池装置上制造背面和金属化接触的方法
公开(公告)号：US20130199606A1
公开(公告)日：2013-08-08
申请号：US13366817
申请日：2012-02-06
申请人： Shuran Sheng , Lin Zhang , David Tanner , Xuesong Lu
发明人： Shuran Sheng , Lin Zhang , David Tanner , Xuesong Lu
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Embodiments of the present invention are directed to a process for making solar cells. In one embodiment, a method of manufacturing a solar cell device, includes providing a substrate having a first surface and a second surface, selectively disposing a first metal paste in a first pattern on the first surface of the substrate, forming a first dielectric layer over the first metal paste on the first surface of the substrate, forming a second metal paste in a second pattern over the first dielectric layer align with the first metal paste, and simultaneously heating the first and the second metal pastes disposed on the first surface of the substrate to form a first group of contacts on the first surface of the substrate, wherein at least a portion of the second metal paste forms the first group of contacts that each extend through the first dielectric layer to connect with the first metal paste to the first surface of the substrate.
摘要翻译：本发明的实施例涉及制造太阳能电池的方法。在一个实施例中，制造太阳能电池器件的方法包括提供具有第一表面和第二表面的衬底，在衬底的第一表面上选择性地将第一金属膏以第一图案布置，形成第一介电层，在第一介电层上形成第二图案的第二金属膏与第一金属膏对准，同时加热设置在第一金属膏的第一表面上的第一和第二金属浆料，衬底，以在衬底的第一表面上形成第一组触点，其中第二金属膏的至少一部分形成第一组触点，每组触点延伸穿过第一电介质层，以将第一金属膏连接到第一组基板的表面。

36. 发明申请

US20130186464A1 BUFFER LAYER FOR IMPROVING THE PERFORMANCE AND STABILITY OF SURFACE PASSIVATION OF SILICON SOLAR CELLS 审中-公开
标题翻译：用于改善硅太阳能电池表面钝化性能和稳定性的缓冲层
公开(公告)号：US20130186464A1
公开(公告)日：2013-07-25
申请号：US13733825
申请日：2013-01-03
申请人： Shuran Sheng , Lin Zhang
发明人： Shuran Sheng , Lin Zhang
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： H01L31/02167 , H01L31/02168 , H01L31/068 , H01L31/18 , Y02E10/547
摘要： Embodiments of the present invention generally relate to the fabrication of solar cells and more specifically to a buffer layer for improving the performance and stability of surface passivation of Si solar cells. Generally, a passivation layer stack containing a buffer layer (interlayer) is formed on a surface of the silicon-based substrate. In one embodiment, the passivation layer stack may be formed on the back surface of the substrate. In another embodiment, the passivation layer stack is formed on the back surface of the substrate and a front emitter region (light receiving surface) of the substrate.
摘要翻译：本发明的实施方案一般涉及太阳能电池的制造，更具体地涉及用于提高Si太阳能电池的表面钝化的性能和稳定性的缓冲层。通常，在硅基基板的表面上形成包含缓冲层（中间层）的钝化层堆叠。在一个实施例中，钝化层堆叠可以形成在衬底的背面上。在另一个实施例中，钝化层堆叠形成在衬底的背面和衬底的前发射极区（光接收表面）上。

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