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31. 发明申请

US20120111103A1 DETECTING APPARATUS 有权
标题翻译：检测装置
公开(公告)号：US20120111103A1
公开(公告)日：2012-05-10
申请号：US13254492
申请日：2009-08-03
申请人： Seiichi Matsumoto , Hiroyuki Kawaki , Shinya Kamada , Yasunori Toyoshima , Masayuki Kitamura , Takahiro Makihara
发明人： Seiichi Matsumoto , Hiroyuki Kawaki , Shinya Kamada , Yasunori Toyoshima , Masayuki Kitamura , Takahiro Makihara
IPC分类号： G01B21/08
CPC分类号： H01M10/48 , G01B11/306 , G01B21/30 , H01M10/425
摘要： The objective of the present invention is to provide an unexpected detecting apparatus enabled to evaluate an evenness of a compound coated on an electrode of a battery. The detecting apparatus (1) detects an evenness of a compound (12) coated on an electrode (10) of a battery, and includes a first sensor (20) for measuring a mass per unit area of the compound (12) in any points thereof, a second sensor (30, 50) for measuring a thickness of the compound (12) in the any points, and a holder (40, 60) for holding the first and second sensors (20, 30, 50), in which the first and second sensors (20, 30, 50) measure the mass and thickness at the same time, and the evenness is evaluated on the basis of the measured mass and thickness.
摘要翻译：本发明的目的是提供一种能够评估涂覆在电池的电极上的化合物的均匀性的意外检测装置。检测装置（1）检测涂覆在电池的电极（10）上的化合物（12）的均匀性，并且包括用于以任何点测量化合物（12）的每单位面积质量的第一传感器（20），用于测量任何点上的化合物（12）的厚度的第二传感器（30,50）和用于保持第一和第二传感器（20,30,50）的保持器（40,60），其中第一和第二传感器（20,30,50）同时测量质量和厚度，并且基于测量的质量和厚度来评估均匀度。

32. 发明申请

US20120068343A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120068343A1
公开(公告)日：2012-03-22
申请号：US13069206
申请日：2011-03-22
申请人： Makoto Honda , Masayuki Kitamura
发明人： Makoto Honda , Masayuki Kitamura
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L21/76814 , H01L21/28518 , H01L21/28556 , H01L21/76816 , H01L21/76843 , H01L21/76844 , H01L21/76856 , H01L21/76859 , H01L23/485 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor device includes a semiconductor substrate, an interlayer dielectric film, a contact hole, a contact plug and a nickel silicide film. The semiconductor substrate includes silicon. The interlayer dielectric film is formed on the semiconductor substrate. The contact hole is formed in the interlayer dielectric film. A contact plug is formed within the contact hole. A nickel silicide film is formed on a bottom part of the contact hole and electrically connected to the contact plug. A position of an interface between the nickel silicide and the contact plug is higher than a position of an interface between the semiconductor substrate and the interlayer dielectric film.
摘要翻译：根据一个实施例，半导体器件包括半导体衬底，层间绝缘膜，接触孔，接触插塞和硅化镍膜。半导体衬底包括硅。层间绝缘膜形成在半导体衬底上。接触孔形成在层间电介质膜中。接触孔形成在接触孔内。在接触孔的底部形成有镍硅化物膜，与接触插塞电连接。镍硅化物和接触插塞之间的界面的位置高于半导体衬底和层间绝缘膜之间的界面的位置。

33. 发明授权

US07923839B2 Semiconductor device and method for fabricating semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07923839B2
公开(公告)日：2011-04-12
申请号：US12408567
申请日：2009-03-20
申请人： Masayuki Kitamura , Junichi Wada , Hideto Matsuyama
发明人： Masayuki Kitamura , Junichi Wada , Hideto Matsuyama
IPC分类号： H01L23/48
CPC分类号： H01L21/76843 , H01L21/28518 , H01L21/28556 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76864 , H01L21/76873 , H01L2221/1089
摘要： A semiconductor device includes a contact plug electrically connected to a semiconductor substrate; a first barrier metal film with a columnar crystal structure arranged in contact with the semiconductor substrate at least on a bottom surface side of the contact plug; an amorphous film made of a material of the first barrier metal film arranged in contact with the first barrier metal film at least on the bottom surface side of the contact plug; a second barrier metal film made of a material identical to that of the first barrier metal film and having a columnar crystal structure, at least a portion of which is arranged in contact with the amorphous film on the bottom surface side and a side surface side of the contact plug; and a dielectric film arranged on the side surface side of the contact plug.
摘要翻译：半导体器件包括电连接到半导体衬底的接触插塞; 具有柱状晶体结构的第一阻挡金属膜至少在所述接触插塞的底面侧与所述半导体衬底接触; 由所述第一阻挡金属膜的材料制成的非晶膜至少在所述接触插塞的底面上与所述第一阻挡金属膜接触; 第二阻挡金属膜，其由与第一阻挡金属膜的材料相同的材料制成，并且具有柱状晶体结构，其至少一部分与底部表面侧的非晶质膜接触，并且侧表面侧接触塞; 以及设置在接触插塞的侧面侧的电介质膜。

34. 发明授权

US07432468B2 Plasma processing apparatus and plasma processing method 失效
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US07432468B2
公开(公告)日：2008-10-07
申请号：US11694102
申请日：2007-03-30
申请人： Shinsuke Oka , Takahiro Horiguchi , Kazuaki Nishimura , Masayuki Kitamura , Tadahiro Ohmi , Masaki Hirayama
发明人： Shinsuke Oka , Takahiro Horiguchi , Kazuaki Nishimura , Masayuki Kitamura , Tadahiro Ohmi , Masaki Hirayama
IPC分类号： B23K10/00
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32238
摘要： A microwave plasma processing apparatus 100 allows microwaves, passed through a plurality of slots 37, to be transmitted through a plurality of dielectric parts 31 supported by beams 26, raises a gas to plasma with the transmitted microwaves and processes a substrate G with the plasma. The beams 26 are made to project out toward the substrate so as to ensure that the plasma electron density Ne around the ends of the beams 26 is equal to or greater than a cutoff plasma electron density Nc. The projecting beams 26 inhibits interference attributable to surface waves generated with the electrical field energy of microwaves transmitted through adjacent dielectric parts 31 and interference attributable to electrons and ions propagated through the plasma generated under a given dielectric part 31 to reach the plasma generated under an adjacent dielectric part as the plasma generated under the individual dielectric parts 31 is diffused.
摘要翻译：微波等离子体处理装置100允许通过多个狭槽37的微波透过由梁26支撑的多个电介质部分31，并使透射的微波将气体升高到等离子体并用等离子体处理衬底G. 使梁26朝向基板突出，以确保梁26的端部周围的等离子体电子密度Ne等于或大于截止等离子体电子密度Nc。投影光束26抑制归因于通过相邻电介质部件31传播的微波的电场能产生的表面波的干扰，以及由在给定电介质部分31下产生的等离子体传播的电子和离子产生的干扰，以达到在相邻电介质部分31之下产生的等离子体作为在各个电介质部31下产生的等离子体的介质部分扩散。

35. 发明申请

US20070235425A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 失效
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20070235425A1
公开(公告)日：2007-10-11
申请号：US11694102
申请日：2007-03-30
申请人： Shinsuke Oka , Takahiro Horiguchi , Kazuaki Nishimura , Masayuki Kitamura , Tadahiro Ohmi , Masaki Hirayama
发明人： Shinsuke Oka , Takahiro Horiguchi , Kazuaki Nishimura , Masayuki Kitamura , Tadahiro Ohmi , Masaki Hirayama
IPC分类号： B23K9/00
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32238
摘要： A microwave plasma processing apparatus 100 allows microwaves, passed through a plurality of slots 37, to be transmitted through a plurality of dielectric parts 31 supported by beams 26, raises a gas to plasma with the transmitted microwaves and processes a substrate G with the plasma. The beams 26 are made to project out toward the substrate so as to ensure that the plasma electron density Ne around the ends of the beams 26 is equal to or greater than a cutoff plasma electron density Nc. The projecting beams 26 inhibits interference attributable to surface waves generated with the electrical field energy of microwaves transmitted through adjacent dielectric parts 31 and interference attributable to electrons and ions propagated through the plasma generated under a given dielectric part 31 to reach the plasma generated under an adjacent dielectric part as the plasma generated under the individual dielectric parts 31 is diffused.
摘要翻译：微波等离子体处理装置100允许通过多个狭槽37的微波透过由梁26支撑的多个电介质部分31，并使透射的微波将气体升高到等离子体并用等离子体处理衬底G. 使梁26朝向基板突出，以确保梁26的端部周围的等离子体电子密度Ne等于或大于截止等离子体电子密度Nc。投影光束26抑制归因于通过相邻电介质部件31传播的微波的电场能产生的表面波的干扰，以及由在给定电介质部分31下产生的等离子体传播的电子和离子产生的干扰，以达到在相邻电介质部分31之下产生的等离子体作为在各个电介质部31下产生的等离子体的介质部分扩散。

36. 发明授权

US06444262B1 Thermal processing unit and thermal processing method 失效
标题翻译：热处理单元和热处理方法
公开(公告)号：US06444262B1
公开(公告)日：2002-09-03
申请号：US09548603
申请日：2000-04-13
申请人： Masayuki Kitamura , Tomohiro Shiotani , Isao Tafusa
发明人： Masayuki Kitamura , Tomohiro Shiotani , Isao Tafusa
IPC分类号： C23C1600
CPC分类号： C23C16/45502 , C23C16/4412 , C23C16/455 , C23C16/45578 , C23C16/45591 , C23C16/4584 , C30B25/12 , C30B25/14 , H01L21/67109 , H01L21/673
摘要： A thermal processing unit of the invention includes a substrate-holder which can support a plurality of substrates in such a manner that the plurality of substrates are arranged at a predetermined pitch, and a chamber vessel for housing the substrate-holder. The inside of the chamber vessel may be made a vacuum. A gas-introducing slit having a small conductance is provided in one part of a peripheral area of the plurality of substrates held by the substrate-holder. The gas-introducing slit extends in a direction in which the plurality of substrates are arranged and supplies a processing gas for a thermal process into the chamber vessel. A gas-absorbing opening having a large conductance is provided in another part of the peripheral area of the plurality of substrates held by the substrate-holder. The gas-absorbing opening extends in the direction in which the plurality of substrates are arranged. The substrate-holder may be loaded into and unloaded out of the chamber vessel by a loading mechanism.
摘要翻译：本发明的热处理单元包括可以以多个基板以预定间距布置的方式支撑多个基板的基板保持器和用于容纳基板保持器的室容器。腔室容器的内部可以被制成真空。在由基板保持器保持的多个基板的周边区域的一部分中设置导电性小的气体导入狭缝。气体导入狭缝在布置多个基板的方向上延伸，并将用于热处理的处理气体提供到室容器中。在由基板保持器保持的多个基板的周边区域的另一部分中设置具有大电导的吸气开口。气体吸收开口沿着多个基板的排列方向延伸。衬底保持器可以通过加载机构装载到腔室容器中并从其中卸载。

37. 发明授权

US5581874A Method of forming a bonding portion 失效
标题翻译：形成接合部的方法
公开(公告)号：US5581874A
公开(公告)日：1996-12-10
申请号：US410736
申请日：1995-03-27
申请人： Makoto Aoki , Mitsuaki Komino , Masayuki Kitamura
发明人： Makoto Aoki , Mitsuaki Komino , Masayuki Kitamura
IPC分类号： H01L21/00 , H01R43/00
CPC分类号： H01L21/67069 , Y10T279/23 , Y10T29/49117 , Y10T29/49885
摘要： A process apparatus comprises a process chamber containing a semiconductor wafer, a gas being able to be supplied to and exhausted from the process chamber, a support table for supporting an object to be processed, which is contained in the process chamber, a gas supply system for supplying the gas into the process chamber, and a gas exhaust system for exhausting the gas from the process chamber. An inner wall of the process chamber and the support table are formed of an aluminum-based material, and the surfaces of these are brought into contact with a fluorine-containing gas, thereby coating the surfaces with AlF.sub.3.
摘要翻译：一种处理装置，包括一个包含半导体晶片的处理室，能够从该处理室供应和排出的气体;一个用于支撑被处理室内容纳的处理室的支撑台，一个供气系统用于将气体供应到处理室中，以及用于从处理室排出气体的排气系统。处理室的内壁和支撑台由铝基材料形成，其表面与含氟气体接触，从而用AlF 3涂覆表面。

38. 发明授权

US5422524A Antifriction bearing and alternator incorporating same for use in vehicles 失效
公开(公告)号：US5422524A
公开(公告)日：1995-06-06
申请号：US152687
申请日：1993-11-16
申请人： Sigenobu Nakamura , Tutomu Siga , Kenzo Mitani , Yoshiki Fujita , Masayuki Kitamura , Hiroyuki Miyazaki , Teruo Hoshino
发明人： Sigenobu Nakamura , Tutomu Siga , Kenzo Mitani , Yoshiki Fujita , Masayuki Kitamura , Hiroyuki Miyazaki , Teruo Hoshino
IPC分类号： F16C33/62 , H02K5/173 , F16C35/00 , H02K5/16
CPC分类号： F16C33/62 , F16C33/64 , H02K5/1732 , F16C2204/66 , Y10T29/49709
摘要： An antifriction bearing includes a fixed ring which comprises a steel containing up to about 10% of residual austenite. An alternator for vehicles includes a stator mounted on a frame, a rotor having its rotary shaft rotatably supported by a pair of bearings on the frame and a drive pulley mounted on one end of the shaft projecting outward from the frame. The outer ring of at least the bearing toward the pulley comprises a steel containing up to about 10% of residual austenite.

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