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    • 31. 发明授权
    • Method of forming tungsten carbide by chemical vapor deposition
    • 通过化学气相沉积法形成碳化钨的方法
    • US4980201A
    • 1990-12-25
    • US319707
    • 1989-03-07
    • Nobuyuki TokunagaYasushi Kita
    • Nobuyuki TokunagaYasushi Kita
    • C01B32/949C23C16/32
    • C23C16/32
    • The invention relates to a chemical vapor deposition (CVD) method for forming tungsten carbide, W.sub.3 C, by subjecting a gas mixture of tungsten hexafluoride, hydrogen and an aromatic hydrocarbon, e.g. benzene, to vapor phase reaction at an elevated temperature. The reaction temperature can be lowered to the extent of 250.degree. C. and the reaction can be carried out even at normal pressure, not necessarily under reduced pressure, by proportioning tungsten hexafluoride, hydrogen and the hydrocarbon such that in the gas mixture the atomic ratio of C to W falls in the range from 2 to 10 while the atomic ratio of H to C is not lower than 3. By this method a W.sub.3 C film excellent in glossiness can be deposited on various metal parts without adversely affecting the metal parts by the elevated temperature.
    • 本发明涉及一种化学气相沉积(CVD)方法,用于通过使六氟化钨,氢气和芳烃的气体混合物,例如, 苯,在升高的温度下进行气相反应。 反应温度可以降低到250℃的程度,并且即使在常压下,也不一定在减压下,通过配比六氟化钨,氢气和烃来进行反应,使得在气体混合物中原子比 的C与W的比率在2〜10的范围内,而H与C的原子比不低于3.通过该方法,可以在各种金属部件上沉积出优异的光泽度的W3C膜,而不会对金属部件造成不良影响 升温