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31. 发明授权

US5436200A Blanket tungsten deposition 失效
标题翻译：毯子钨沉积
公开(公告)号：US5436200A
公开(公告)日：1995-07-25
申请号：US336692
申请日：1994-11-07
申请人： Kaoru Tanaka
发明人： Kaoru Tanaka
IPC分类号： H01L21/285 , C23C16/04 , C23C16/44 , C23C16/455 , H01L21/205 , H01L21/3205 , H01L21/768 , H01L23/52
CPC分类号： C23C16/45517 , C23C16/042 , C23C16/4558 , H01L21/76838 , H01L2924/0002
摘要： A blanket tungsten deposition apparatus comprises a reactor the inside of which is evacuatable, a gas inlet means for introducing a reaction gas into the reactor, mount means for mounting an object substrate to be treated, penetration-preventing means for preventing penetration of gas, disposed to cover a peripheral portion of a surface of the object substrate to be treated and having an inner diameter smaller than a diameter of the object substrate and an outer perimeter larger than that of the object substrate, and another gas inlet means for introducing a gas to a space on the periphery of the object substrate covered by the penetration-preventing means. Growth of W film on a peripheral SiO.sub.2 portion of substrate is prevented and hence production of particles caused by peeling-off of W film is prevented.
摘要翻译：覆盖钨沉积装置包括其内部可抽空的反应器，用于将反应气体引入反应器的气体入口装置，用于安装待处理物体的安装装置，用于防止气体渗透的防止穿透装置，覆盖待处理对象基板的表面的周边部分，其内径小于对象基板的直径，外周长大于对象基板的直径;以及另一气体入口装置，用于将气体引入由穿透防止装置覆盖的物体基板的周边上的空间。防止在基板的外围SiO 2部分上生长W膜，因此防止了由W膜的剥离引起的颗粒的产生。

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