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    • 36. 发明申请
    • Portable raman sensor for soil nutrient detection
    • 便携式拉曼传感器,用于土壤养分检测
    • US20070013908A1
    • 2007-01-18
    • US11475501
    • 2006-06-27
    • Won LeeIsmail Bogrekci
    • Won LeeIsmail Bogrekci
    • G01J3/44G01N21/65
    • G01N21/65G01J3/02G01J3/0272G01J3/28G01J3/44G01N2201/0221G01N2201/08
    • An apparatus and method for detecting phosphorus in soil and vegetation are developed. In one embodiment, a portable Raman-based sensor is provided to obtain significant phosphorus absorption band in soils and to determine phosphorus concentrations. The portable sensor can have the capability to measure phosphorus concentrations in wet and dry soil samples as well as fresh and dry vegetations. In one embodiment, the portable sensor of the invention uses a 600 mW laser light source at 785 nm with a full width at half maximum of about 0.2 nm and a spectrometer that covers 340 and 3640 cm−1. Software, written in Visual C++, and partial least squares analysis were used to produce calibration and predictions models.
    • 开发了一种检测土壤和植被磷的设备和方法。 在一个实施例中,提供了一种便携式拉曼传感器,以在土壤中获得显着的磷吸收带并确定磷浓度。 便携式传感器可以测量湿和干土壤样品中的磷浓度以及新鲜和干燥的植被。 在一个实施例中,本发明的便携式传感器使用785nm的600mW激光源,半宽度为约0.2nm的全宽度以及覆盖340和3640cm -1的光谱仪。 使用Visual C ++编写的软件和偏最小​​二乘法分析来生成校准和预测模型。
    • 37. 发明申请
    • Semiconductor device and method of manufacturing the same
    • 半导体装置及其制造方法
    • US20060170005A1
    • 2006-08-03
    • US11265683
    • 2005-11-02
    • Kyung HwangWon Lee
    • Kyung HwangWon Lee
    • H01L27/10H01L21/82
    • H01L21/76877H01L21/7684H01L21/76895H01L21/823475
    • Provided are a semiconductor device, adapted to be capable of fabricating the device having improved resistance characteristic by decreasing dishing of solid phase epitaxy (SPE) silicon during planarization in a landing plug forming process via use of SPE silicon, and a method of manufacturing the same. The method of manufacturing a semiconductor device in accordance with the present invention comprises, forming a plurality of gates on a semiconductor substrate; forming an interlayer dielectric film thereon, such that the gates are embedded; selectively etching the interlayer dielectric film to open a landing plug-forming region; depositing SPE silicon, such that the opened landing plug-forming region in the interlayer dielectric film is embedded; implanting boron ions into the SPE silicon; and annealing the resulting boron ion-implanted structure.
    • 提供一种半导体器件,其适于能够通过使用SPE硅在着陆塞形成过程中的平坦化期间减少固相外延(SPE)硅的凹陷来制造具有改进的电阻特性的器件及其制造方法 。 根据本发明的制造半导体器件的方法包括:在半导体衬底上形成多个栅极; 在其上形成层间电介质膜,使得栅极被嵌入; 选择性地蚀刻层间电介质膜以打开着陆堵塞形成区域; 沉积SPE硅,使得层间绝缘膜中的开放的着色塞形成区被嵌入; 将硼离子注入SPE硅中; 并对所得的硼离子注入结构进行退火。
    • 39. 发明申请
    • Liquid crystal display
    • 液晶显示器
    • US20050280759A1
    • 2005-12-22
    • US11200594
    • 2005-08-10
    • Dong-Hae SuhYoung ParkHee KimHwan ShimWon Lee
    • Dong-Hae SuhYoung ParkHee KimHwan ShimWon Lee
    • G02F1/1337G02F1/1335G02F1/13363G02F1/1343G02F1/139
    • G02F1/13363G02F1/1393G02F1/1396G02F2001/133531G02F2001/133541G02F2001/133638G02F2001/1398G02F2202/40G02F2203/02G02F2203/09G02F2413/08
    • The present invention relates to a liquid crystal display, which comprises: a lower substrate having a reflective electrode; a lower alignment film formed on the lower substrate; an upper substrate having a color filter and disposed opposite to the lower substrate; an upper alignment film formed on the upper substrate; a liquid crystal layer sandwiched between the lower and upper substrates; a phase compensation film adhered on the outer surface of the upper substrate and serving to convert linearly polarized light into circularly polarized light; and a polarizer adhered on the phase compensation film and serving to convert natural light into linearly polarized light. The lower alignment film has an alignment angle of −10 to 20° with respect to a horizontal line, the upper alignment film has an alignment angle of 40 to 55° with respect to a horizontal line, the liquid crystal layer has a phase delay value (dΔn) of 0.24-0.27 μm, the phase compensation film has a phase compensation function of λ/4 and also has an optical axis making 140-146° with a horizontal line, and the polarizer has a absorption axis making 120 to 122.5° with a horizontal line. According to the present invention, the design of a liquid crystal cell can be optimized to provide a liquid crystal display having excellent display characteristics. Furthermore, cell gap can be increased to improve process margin.
    • 本发明涉及一种液晶显示器,它包括:具有反射电极的下基板; 形成在下基板上的下取向膜; 具有滤色片并与下基板相对设置的上基板; 形成在上基板上的上取向膜; 夹在下基板和上基板之间的液晶层; 相位补偿膜粘附在上基板的外表面上,用于将线偏振光转换为圆偏振光; 以及附着在相位补偿膜上并用于将自然光转换为线偏振光的偏振片。 下取向膜相对于水平线具有-10〜20°的取向角,上取向膜相对于水平线具有40〜55°的取向角,液晶层具有相位延迟值 (dDeltan)为0.24-0.27μm,相位补偿膜具有λ/ 4的相位补偿功能,并且具有水平线制成140-146°的光轴,并且偏振器具有制成120至122.5°的吸收轴 与水平线。 根据本发明,可优化液晶单元的设计以提供具有优异显示特性的液晶显示器。 此外,可以增加细胞间隙以改善过程边缘。
    • 40. 发明申请
    • Photoresist cleaning solutions and methods for pattern formation using the same
    • 光刻胶清洗液及使用其形成图案的方法
    • US20050109992A1
    • 2005-05-26
    • US10996636
    • 2004-11-23
    • Won LeeGeun-Su LeeSam Kim
    • Won LeeGeun-Su LeeSam Kim
    • G03F7/32G03C5/00G03F7/16G03F7/38
    • G03F7/38G03F7/168
    • Disclosed are photoresist cleaning solutions, which are used to clean semiconductor substrates before or after an exposing step when photoresist patterns are formed. Methods for forming patterns using the same are also disclosed. The cleaning solutions include H2O and a nonionic surfactant compound represented by Formula 1. By spraying the disclosed cleaning solutions on a surface of the semiconductor substrate before or after exposing step to form a photoresist pattern, the desired pattern only is obtained and unnecessary patterns generated in undesired regions by ghost images are avoided as excess acid generated by the photoacid generator is neutralized and removed and damage to unexposed portions of the photoresist polymer is avoided. wherein R1 and R2 are independently H, C1-C20 alkyl, C5-C25 alkyl aryl or C1-C10 ester; m is 1 or 2; n is an integer ranging from 10 to 300; and o is 0 or 1.
    • 公开了光致抗蚀剂清洁溶液,其在形成光致抗蚀剂图案时用于在暴露步骤之前或之后清洁半导体衬底。 还公开了使用其形成图案的方法。 清洗溶液包括H 2 O 2和由式1表示的非离子表面活性剂化合物。通过在暴露步骤之前或之后将所公开的清洁溶液喷涂在半导体衬底的表面上以形成光致抗蚀剂图案,所需的 避免了图案,并且避免了由不想要的区域产生的重影图像产生的不必要的图案,因为光致酸发生器产生的过量酸被中和和去除,并且避免了光致抗蚀剂聚合物的未曝光部分的损坏。 其中R 1和R 2独立地为H,C 1 -C 20烷基,C 5 烷基芳基或C 1 -C 10烷基酯; C 1 -C 15烷基芳基或C 1 -C 10烷基酯; m为1或2; n为10〜300的整数。 o为0或1。