专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明申请

US20090221743A1 BIOLOGICAL SUBSTANCE RELATED ARTICLE AND METHOD OF MANUFACTURING THE SAME, AND BIOLOGICAL SUBSTANCE ADSORPTION PREVENTIVE COATING COMPOSITION AND METHOD OF USING THE SAME 有权
标题翻译：生物物质相关文章及其制备方法及生物物质吸附预防涂料组合物及其使用方法
公开(公告)号：US20090221743A1
公开(公告)日：2009-09-03
申请号：US12437790
申请日：2009-05-08
申请人： Masayuki Takahashi , Kinji Yamada , Toshihiro Ogawa
发明人： Masayuki Takahashi , Kinji Yamada , Toshihiro Ogawa
IPC分类号： C08L35/00 , C08L77/00 , C08L75/00
CPC分类号： C09D5/1668 , C09D133/14 , Y10T428/1334 , Y10T428/1352 , Y10T428/1393
摘要： A biological substance related article includes a coating formed by causing a biological substance adsorption preventive coating composition to come in contact with a surface of the biological substance related article and heating the composition, the biological substance adsorption preventive coating composition including: (A) a copolymer obtained by copolymerizing raw material monomers including a monomer A1 shown by the following general formula (1) and an active hydrogen group-containing monomer A2; (B) a crosslinking agent reactive with an active hydrogen group; and (C) a solvent. CH2═CR3COOR1OR2 (1) (R1 represents an alkylene group having 1 to 4 carbon atoms, R2 represents an alkyl group having 1 to 4 carbon atoms, and R3 represents a hydrogen atom or a methyl group)
摘要翻译：生物物质相关物品包括通过使生物物质吸附预防涂料组合物与生物物质相关物质的表面接触并加热组合物而形成的涂层，所述生物物质吸附防止涂料组合物包含：（A）共聚物通过使包含由以下通式（1）表示的单体A1和含活性氢基团的单体A2的原料单体共聚而获得的; （B）与活性氢基反应的交联剂; 和（C）溶剂。 <？in-line-formula description =“In-line Formulas”end =“lead”？> CH2-CR3COOR1OR2（1）<？in-line-formula description =“In-line Formulas”end =“tail”？> （R 1表示碳原子数1〜4的亚烷基，R 2表示碳原子数1〜4的烷基，R 3表示氢原子或甲基）

32. 发明申请

US20070181928A1 Capacitor and manufacturing method thereof 有权
标题翻译：电容器及其制造方法
公开(公告)号：US20070181928A1
公开(公告)日：2007-08-09
申请号：US11508141
申请日：2006-08-23
申请人： Yoshiki Yamanishi , Muneo Harada , Takahiro Kitano , Tatsuzo Kawaguchi , Yoshihiro Hirota , Kinji Yamada , Tomotaka Shinoda , Katsuya Okumura , Shuichi Kawano
发明人： Yoshiki Yamanishi , Muneo Harada , Takahiro Kitano , Tatsuzo Kawaguchi , Yoshihiro Hirota , Kinji Yamada , Tomotaka Shinoda , Katsuya Okumura , Shuichi Kawano
IPC分类号： H01L29/94
CPC分类号： H01L23/50 , H01G4/228 , H01G4/33 , H01L23/481 , H01L24/81 , H01L2224/81801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01056 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/19041 , H01L2924/30105 , H05K1/162 , H05K3/002 , H05K2201/09509 , H05K2201/096 , H05K2201/10378
摘要： A capacitor having a high quality and a manufacturing method of the same are provided. A capacitor has a lower electrode formed on an oxide film, a dielectric layer formed on the lower electrode, an upper electrode formed so as to face the lower electrode with the dielectric layer between, and an upper electrode formed so as to cover the upper electrode, an opening portion of the upper electrode and an opening portion of the dielectric layer. By forming the upper electrode on the dielectric layer, it is possible to pattern the dielectric layer by using the upper electrode as a mask, and provide a capacitor having a high-quality dielectric layer by preventing impurity diffusion into the dielectric layer. By forming the upper electrode on the dielectric layer, it is possible to prevent the dielectric layer from being exposed to etching liquid, liquid developer, etc.
摘要翻译：提供了具有高质量的电容器及其制造方法。电容器具有形成在氧化膜上的下电极，形成在下电极上的电介质层，形成为与电极之间介电层相对的下电极的上电极和形成为覆盖上电极的上电极，上电极的开口部分和电介质层的开口部分。通过在电介质层上形成上电极，可以通过使用上电极作为掩模对电介质层进行图案化，并且通过防止杂质扩散到电介质层中来提供具有高质量电介质层的电容器。通过在电介质层上形成上部电极，可以防止电介质层暴露于蚀刻液体，液体显影剂等

33. 发明申请

US20070126041A1 Dielectric film capacitor and method of manufacturing the same 有权
标题翻译：介电薄膜电容器及其制造方法
公开(公告)号：US20070126041A1
公开(公告)日：2007-06-07
申请号：US11508204
申请日：2006-08-23
申请人： Tomotaka Shinoda , Kinji Yamada , Takahiro Kitano , Yoshiki Yamanishi , Muneo Harada , Tatsuzo Kawaguchi , Yoshihiro Hirota , Katsuya Okumura , Shuichi Kawano
发明人： Tomotaka Shinoda , Kinji Yamada , Takahiro Kitano , Yoshiki Yamanishi , Muneo Harada , Tatsuzo Kawaguchi , Yoshihiro Hirota , Katsuya Okumura , Shuichi Kawano
IPC分类号： H01L29/94 , H01L21/00
CPC分类号： H01L28/65 , H01L27/11507 , H01L28/55 , Y10T29/435
摘要： A dielectric film capacitor includes a lower electrode having an opening and formed of a material including platinum, a dielectric film provided over the lower electrode and including an oxide having an ABOx crystal structure, and an upper electrode provided over the dielectric film. The planar area of the lower electrode is 50% or more of the area of a formation region of the dielectric film. A dielectric film capacitor includes a lower electrode formed of a material including platinum and having a thickness of 10 to 100 nm, a dielectric film provided over the lower electrode and including an oxide having an ABOx crystal structure, and an upper electrode provided over the dielectric film.
摘要翻译：电介质膜电容器包括具有开口并由包括铂的材料形成的下电极，设置在下电极上并包括具有ABOx晶体结构的氧化物的电介质膜和设置在电介质膜上的上电极。下部电极的平面面积为电介质膜的形成区域的面积的50％以上。电介质膜电容器包括由包括铂的材料形成的厚度为10至100nm的下电极，设置在下电极上并包括具有ABOx晶体结构的氧化物的电介质膜，以及设置在电介质上的上电极电影。

34. 发明申请

US20060283354A1 Method of producing composition for forming dielectric film, composition for forming dielectric film, dielectric film and method of producing dielectric film 审中-公开
标题翻译：电介质膜形成用组合物的制造方法，电介质膜的形成用组合物，电介质膜及制造电介质膜的方法
公开(公告)号：US20060283354A1
公开(公告)日：2006-12-21
申请号：US11446903
申请日：2006-06-05
申请人： Tomotaka Shinoda , Masayuki Takahashi , Kinji Yamada , Kyouichirou Ryuu
发明人： Tomotaka Shinoda , Masayuki Takahashi , Kinji Yamada , Kyouichirou Ryuu
IPC分类号： C23C16/40 , H01L21/316 , B05D3/02
CPC分类号： C01G35/00 , C01G23/005 , C01G23/006 , C01G25/00 , C01G27/00 , C01G33/00 , C01P2002/72 , C04B35/468 , C23C18/1216 , H01L28/55
摘要： A method of producing a dielectric-film-forming composition including: (a) dissolving a metal hydroxide including a metal A which is at least one metal selected from Li, Na, Ca, Sr, and Ba and at least one of a metal alkoxide and a metal complex including a metal B which is at least one metal selected from Ti, Zr, Hf, Ta, and Nb in an organic solvent to prepare a solution; and (b) allowing a precursor in the solution prepared in the step (a) to react.
摘要翻译：一种电介质膜形成用组合物的制造方法，其特征在于，包括：（a）溶解金属氢氧化物，所述金属氢氧化物包含金属A，所述金属A是选自Li，Na，Ca，Sr和Ba中的至少一种金属和至少一种金属醇盐以及在有机溶剂中含有选自Ti，Zr，Hf，Ta和Nb中的至少一种金属的金属B的金属络合物，以制备溶液; 和（b）使步骤（a）中制备的溶液中的前体反应。

35. 发明申请

US20050003218A1 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing 有权
标题翻译：化学机械抛光止动膜，其制造方法和化学机械抛光方法
公开(公告)号：US20050003218A1
公开(公告)日：2005-01-06
申请号：US10902008
申请日：2004-07-30
申请人： Michinori Nishikawa , Takashi Okada , Kinji Yamada
发明人： Michinori Nishikawa , Takashi Okada , Kinji Yamada
IPC分类号： H01L21/304 , B24B37/04 , C08L71/00 , C09D171/00 , H01L21/321 , H01L21/768 , B32B15/08
CPC分类号： B24B37/005 , B24B37/015 , B24B37/042 , C08L71/00 , C09D171/00 , H01L21/3212 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L21/7684 , Y10T428/31692
摘要： A chemical mechanical polishing stopper film comprising at least one organic polymer, said film having a dielectric constant of 4 or lower, and a chemical mechanical polishing method. The chemical mechanical polishing method comprises forming a chemical mechanical polishing stopper film comprising at least one organic polymer on an insulating film so that the stopper film is interposed between the insulating film and a metal film to be removed by chemical mechanical polishing, and then removing the metal film with a chemical mechanical polishing slurry.
摘要翻译：一种化学机械抛光阻挡膜，其包含至少一种有机聚合物，所述膜的介电常数为4或更低，以及化学机械抛光方法。化学机械抛光方法包括在绝缘膜上形成包含至少一种有机聚合物的化学机械抛光阻挡膜，使得阻挡膜介于通过化学机械抛光除去的绝缘膜和金属膜之间，然后除去金属薄膜与化学机械抛光浆料。

36. 发明授权

US06787193B2 Method for the formation of silica film, silica film, insulating film, and semiconductor device 失效
标题翻译：形成二氧化硅膜，二氧化硅膜，绝缘膜和半导体器件的方法
公开(公告)号：US06787193B2
公开(公告)日：2004-09-07
申请号：US10165324
申请日：2002-06-10
申请人： Eiji Hayashi , Atsushi Shiota , Michinori Nishikawa , Kinji Yamada
发明人： Eiji Hayashi , Atsushi Shiota , Michinori Nishikawa , Kinji Yamada
IPC分类号： B32B1800
CPC分类号： H01L21/02126 , C09D183/04 , H01L21/02216 , H01L21/02282 , H01L21/02343 , H01L21/31133 , H01L21/31138 , H01L21/3122 , H01L21/31695 , Y02P20/544 , Y10T428/31663
摘要： A method for the formation of a silica film which comprises treating a film in a supercritical medium, the film comprising (A) a siloxane compound and (B) at least one member selected from the group consisting of (B-1) a compound compatible with or dispersible in ingredient (A) and having a boiling or decomposition temperature of from 150 to 500° C. and (B-2) a surfactant. The silica film has excellent mechanical strength showing a dielectric constant of generally 2.2 or lower, and hence is useful as a dielectric film in semiconductor devices and the like.
摘要翻译：一种形成二氧化硅膜的方法，其包括在超临界介质中处理膜，所述膜包含（A）硅氧烷化合物和（B）选自（B-1）中的至少一种，与具有或分散在成分（A）中，沸点或分解温度为150-500℃，和（B-2）表面活性剂。该二氧化硅膜的机械强度优异，介电常数为2.2以下，因此可用作半导体装置等的电介质膜。

37. 发明授权

US06576393B1 Composition for resist underlayer film and method for producing the same 有权
标题翻译：抗蚀剂下层膜用组合物及其制造方法
公开(公告)号：US06576393B1
公开(公告)日：2003-06-10
申请号：US09545453
申请日：2000-04-07
申请人： Hikaru Sugita , Akio Saito , Kinji Yamada , Michinori Nishikawa , Yoshihisa Ohta , Yoshiji Yuumoto
发明人： Hikaru Sugita , Akio Saito , Kinji Yamada , Michinori Nishikawa , Yoshihisa Ohta , Yoshiji Yuumoto
IPC分类号： G03C173
CPC分类号： G03F7/0751 , G03F7/09 , Y10S430/106 , Y10S430/115 , Y10S430/12 , Y10S430/122 , Y10S430/124 , Y10S430/126
摘要： Disclosed are a composition for a resist underlayer film excellent in reproducibility of a resist pattern, excellent in adhesion to a resist, excellent in resistance to a developing solution used after exposure of the resist and decreased in film loss in oxygen ashing of the resist; and a method for producing the same, the composition comprising: both or either of a hydrolysate and a condensate of (A) at least one compound selected from the group consisting of (A-1) a compound represented by the following general formula (1): R1aSi(OR2)4−a (1) wherein R1 represents a hydrogen atom, a fluorine atom or a univalent organic group, R2 represents a univalent organic group, and a represents an integer of 0 to 2, and (A-2) a compound represented by the following general formula (2): R3b(R4O)3−bSi—(R7)d—Si(OR5)3−cR6c (2) wherein R3, R4, R5 and R6, which may be the same or different, each represent univalent organic groups, b and c, which may be the same or different, each represent integers of 0 to 2, R7 represents an oxygen atom or —(CH2)n—, d represents 0 or 1, and n represents an integer of 1 to 6; and (B) a compound generating an acid by ultraviolet irradiation and/or heating.
摘要翻译：公开了抗蚀剂图案的再现性优异的抗蚀剂下层膜的组合物，对抗蚀剂的附着性优异，对抗蚀剂曝光后使用的显影液的耐受性优异，抗蚀剂的氧气灰化的膜损失降低; 及其制备方法，该组合物包含：（A）至少一种选自（A-1）由下列通式（1）表示的化合物的化合物的水解产物和缩合物：）：其中R1表示氢原子，氟原子或一价有机基团，R2表示一价有机基团，a表示0〜2的整数，（A-2）由以下通式（ 2）：其中可以相同或不同的R 3，R 4，R 5和R 6各自表示一价有机基团，b和c可以相同或不同，各自表示0-2的整数，R7表示氧原子或 - （CH 2）n - ，d表示0或1，n表示1〜6的整数。和（B）通过紫外线照射和/或加热产生酸的化合物。

38. 发明授权

US06406794B1 Film-forming composition 有权
标题翻译：成膜组合物
公开(公告)号：US06406794B1
公开(公告)日：2002-06-18
申请号：US09778822
申请日：2001-02-08
申请人： Atsushi Shiota , Takahiko Kurosawa , Eiji Hayashi , Makoto Sugiura , Toshiyuki Akiike , Keiji Konno , Tadahiro Shiba , Kohei Goto , Kinji Yamada
发明人： Atsushi Shiota , Takahiko Kurosawa , Eiji Hayashi , Makoto Sugiura , Toshiyuki Akiike , Keiji Konno , Tadahiro Shiba , Kohei Goto , Kinji Yamada
IPC分类号： B32B904
CPC分类号： C08J5/18 , C08G2650/58 , C08J2371/00 , C08L71/00 , C08L71/02 , C09D171/02 , C09D183/04 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3122 , Y10T428/31663 , C08L83/00 , C08L2666/14
摘要： A film-forming composition comprising: (A) at least one silane compound selected from the group consisting of a compound shown by the following formula (1), a compound shown by the following formula (2), and a compound shown by the following formula (3) and a hydrolysis condensate of these compounds: R2R3Si(OR1)2 (1) R2Si(OR1)3 (2) Si(OR1)4 (3) wherein R1, R2, and R3 individually represent a monovalent organic group, (B) a polyether shown by the formula (PEO)p—(PPO)q—(PEO)r, wherein PEO represents a polyethylene oxide unit, PPO represents a polypropylene oxide unit, p is a number of 2-200, q is a number of 20-80, and r is a number of 2-200, and (C) an organic solvent. The composition exhibits superior storage stability, is capable of producing a low-density film having a small relative dielectric constant, low water absorption properties, and small vacant space size, and is thus suitable as an interlayer dielectric material in the manufacture of semiconductor devices.
摘要翻译：一种成膜组合物，其包含：（A）至少一种选自由下式（1）表示的化合物，下式（2）所示的化合物和下述化合物的硅烷化合物式（3）和这些化合物的水解缩合物：其中R1，R2和R3各自表示一价有机基团，（B）由式（PEO）p-（PPO）q-（PEO）r表示的聚醚，其中PEO表示聚环氧乙烷单元，PPO表示聚环氧丙烷单元，p为2〜200的数，q为20〜80的数，r为2〜200的数，（C）有机溶剂。该组合物表现出优异的储存稳定性，能够生产具有小的相对介电常数，低吸水性和小的空间空间尺寸的低密度膜，因此适合作为制造半导体器件的层间绝缘材料。

39. 发明授权

US06313233B1 Curable resin composition cured products 有权
标题翻译：固化树脂组合物固化产物
公开(公告)号：US06313233B1
公开(公告)日：2001-11-06
申请号：US09447952
申请日：1999-11-29
申请人： Takahiko Kurosawa , Kinji Yamada , Minoru Matsubara , Yasutake Inoue , Tomotaka Shinoda , Kouhei Gotou
发明人： Takahiko Kurosawa , Kinji Yamada , Minoru Matsubara , Yasutake Inoue , Tomotaka Shinoda , Kouhei Gotou
IPC分类号： C08G6548
CPC分类号： H01L21/02126 , C08G77/455 , C08K5/5415 , C08L79/08 , C09D183/10 , H01L21/312 , C08L2666/52
摘要： A curable resin composition comprising (A) a hydrolyzate or a partial condensate of an organosilane compound, or both; (B) at least one compound selected from the group consisting of polyamic acids having a hydrolyzable silyl group or carboxylic acid anhydride group, or both, and polyimides having a hydrolyzable silyl group or carboxylic acid anhydride group, or both; and (C) a chelate compound or an alkoxide compound with a metal selected from the group consisting of zirconium, titanium, and aluminum, or both the chelate compound and the alkoxide compound. The resin composition can be cured and fabricated without producing no cracks into a cured product such as a semiconductor device having a low dielectric constant, high heat resistance and moisture resistance, superior adhesion to various substrate materials, superb electrical insulation properties, and low moisture absorption. Semiconductor devices using this curable resin composition as an insulating film exhibit a low electricity consumption, work at a high speed, and have excellent reliability.
摘要翻译：一种可固化树脂组合物，其包含（A）有机硅烷化合物的水解产物或部分缩合物，或两者; （B）至少一种选自具有水解性甲硅烷基或羧酸酐基团的聚酰胺酸或二者的化合物和具有可水解甲硅烷基或羧酸酐基团的聚酰亚胺或两者; 和（C）螯合化合物或选自锆，钛和铝的金属的醇盐化合物，或螯合化合物和醇盐化合物两者。可以固化和制造树脂组合物，而不会在诸如具有低介电常数，高耐热性和耐湿性，优异的各种基材的粘合性，优异的电绝缘性能和低吸湿性的半导体装置等固化产物中不产生裂纹。使用该固化性树脂组合物作为绝缘膜的半导体装置的电耗低，高速工作，可靠性优异。

40. 发明授权

US06235101B1 Composition for film formation and film 有权
标题翻译：成膜和成膜
公开(公告)号：US06235101B1
公开(公告)日：2001-05-22
申请号：US09203534
申请日：1998-12-01
申请人： Takahiko Kurosawa , Kinji Yamada , Tomotaka Shinoda , Minoru Matsubara , Satoko Hakamatsuka
发明人： Takahiko Kurosawa , Kinji Yamada , Tomotaka Shinoda , Minoru Matsubara , Satoko Hakamatsuka
IPC分类号： C09D525
CPC分类号： H01L21/02126 , C08G77/58 , C09D183/14 , H01L21/02282 , H01L21/3121
摘要： A composition for film formation and a film obtained by heating the composition. The composition comprises: (A) a hydrolyzate and/or partial condensate of a compound represented by the following formula (1) R1nSi(OR2)4-n (1) wherein R1 and R2 may be the same or different and each represent an alkyl group having 1 to 5 carbon atoms or an aryl group having 6 to 20 carbon atoms, and n is an integer of 1 or 2; (B) a metal chelate compound represented by the following formula (2) R3tM(OR4)s-t (2) wherein R3 represents a chelating agent, M represents a metal atom, R4 represents an alkyl group having 2 to 5 carbon atoms or an aryl group having 6 to 20 carbon atoms, s represents a valence of the metal M, and t is an integer of 1 to s; (C) an organic solvent having a boiling point of 110 to 180° C.; and (D) &bgr;-diketone.
摘要翻译：用于成膜的组合物和通过加热组合物获得的膜。组合物包含：（A）由下式（1）表示的化合物的水解产物和/或部分缩合物，其中R 1和R 2可以相同或不同，各自表示碳原子数1〜5的烷基或碳原子数6〜20的芳基，n表示1或2的整数，（B）由下式（2）表示的金属螯合物，其中，R3表示螯合剂，M表示金属原子，R4表示碳原子数2〜5的烷基或碳原子数6〜20的芳基，s表示金属M的化合价，t表示1〜s的整数。 ;（C）沸点为110〜180℃的有机溶剂。和（D）β-二酮。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式