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31. 发明申请

US20070232601A1 Vla-4 Inhibitor 审中-公开
标题翻译： Vla-4抑制剂
公开(公告)号：US20070232601A1
公开(公告)日：2007-10-04
申请号：US11629354
申请日：2005-06-14
申请人： Yoshiyuki Yoneda , Atsushi Nakayama , Nobuo Machinaga , Jun Chiba , Fumihito Muro
发明人： Yoshiyuki Yoneda , Atsushi Nakayama , Nobuo Machinaga , Jun Chiba , Fumihito Muro
IPC分类号： A61K31/535 , A61K31/40 , A61K31/425 , C07D207/00 , C07D263/00 , C07D277/62 , C07D265/28 , C07D241/00 , A61K31/445 , A61K31/497
CPC分类号： C07D417/14 , C07D413/14
摘要： An object of the present invention is to provide a compound which selectively inhibits binding of a ligand and α4β1 integrin (VLA-4), a process for producing the compound, and a medicament containing the compound. A compound represented by the formula (I) etc. or a salt thereof, a process for producing the compound or a salt thereof, a medicament containing the compound or a salt thereof, as well as a preventive and/or a therapeutic agent for a disease caused by cell adhesion, for example, inflammatory reaction, autoimmune disease, cancer metastasis, bronchial asthma, nasal obstruction, diabetes, arthritis, psoriasis, multiple sclerosis, inflammatory bowel disease and rejection reaction at transplantation, containing the compound or a salt thereof as a primary component. [wherein Y1 represents a divalent aryl group etc., V1 represents an aryl group etc., and R11 to R14 represent H, OH or a halogen atom etc.]
摘要翻译：本发明的目的是提供选择性抑制配体和α4β1整联蛋白（VLA-4）结合的化合物，该化合物的制备方法和含有该化合物的药物。由式（I）等表示的化合物或其盐，化合物或其盐的制备方法，含有该化合物或其盐的药物以及用于治疗和/ 包含其化合物或其盐的细胞粘附引起的疾病，例如炎性反应，自身免疫性疾病，癌症转移，支气管哮喘，鼻塞，糖尿病，关节炎，银屑病，多发性硬化，炎症性肠病和移植排斥反应主要组成部分。 [其中Y 1表示二价芳基等，V 1表示芳基等，R 11至R 11， 14表示H，OH或卤素原子等]

32. 发明申请

US20060223340A1 Manufacturing managing method of semiconductor devices and a semiconductor substrate 审中-公开
标题翻译：半导体器件和半导体衬底的制造管理方法
公开(公告)号：US20060223340A1
公开(公告)日：2006-10-05
申请号：US11229728
申请日：2005-09-20
申请人： Yoshiyuki Yoneda
发明人： Yoshiyuki Yoneda
IPC分类号： H01L21/00
CPC分类号： H01L21/67294 , H01L22/20 , H01L23/3114 , H01L23/5227 , H01L23/525 , H01L23/544 , H01L24/10 , H01L24/13 , H01L2223/54466 , H01L2224/0554 , H01L2224/05548 , H01L2224/05573 , H01L2224/05647 , H01L2224/13 , H01L2224/13082 , H01L2224/131 , H01L2224/1357 , H01L2224/136 , H01L2224/16 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/014 , H01L2924/181 , H01L2224/13099 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A managing method of manufacturing semiconductor devices is disclosed. The method comprises the steps of: providing at least one tag region on a semiconductor substrate in which plural semiconductor devices have been formed, the tag region being provided with a tag which can read/write information without making physical contact; writing manufacturing managing information of each of the semiconductor devices into the tag without making contact with the semiconductor substrate; and reading the manufacturing managing information from the tag after dividing the semiconductor substrate, and selecting non-defective semiconductor devices based on the manufacturing managing information.
摘要翻译：公开了制造半导体器件的管理方法。该方法包括以下步骤：在形成有多个半导体器件的半导体衬底上提供至少一个标签区域，标签区域设置有可以在不进行物理接触的情况下读取/写入信息的标签; 将每个半导体器件的制造管理信息写入标签中而不与半导体衬底接触; 以及在划分半导体衬底之后从标签读取制造管理信息，并且基于制造管理信息选择无缺陷的半导体器件。

33. 发明申请

US20050244414A1 Method to ameliorate osteolysis and metastasis 审中-公开
标题翻译：改善骨质溶解和转移的方法
公开(公告)号：US20050244414A1
公开(公告)日：2005-11-03
申请号：US11109470
申请日：2005-04-18
申请人： Gregory Mundy , Yoshiyuki Yoneda , Theresa Guise
发明人： Gregory Mundy , Yoshiyuki Yoneda , Theresa Guise
IPC分类号： C12N15/09 , A61K9/08 , A61K31/66 , A61K31/675 , A61K38/00 , A61K39/395 , A61K45/06 , A61P35/00 , A61P43/00 , C07K16/22 , C07K16/24 , C07K16/26 , C12P21/08 , A61K31/663
CPC分类号： C07K16/244 , A61K38/00 , A61K45/06 , C07K16/22 , C07K16/241 , C07K16/26
摘要： A therapeutically effective amount of an antibody for a compound selected from the group consisting of PTHrp, TGFα, IL-1α, IL-1β, IL-6, Lymphotoxin, TNF, PGE; 1,25 dihydroxy vitamin D3 and an antigenic fragment thereof used in the treatment of cancer metastasis to bone and cancer cell growth in bone as well as osteolysis and symptomatic sequelae thereof. An antibody immunoreactive with parathyroid hormone-related protein (PTHrp) is particularly preferred. Antibodies with human characteristics are included in the invention for application of the invention method to human subjects. Also, the antibody can be administered in an injectable is formulation in combination with a therapeutically effective amount of a bisphosphonate or pyrophosphate having the general structure formula wherein X is a linking moiety allowing for the interconnection of the phosphonate groups, and pharmaceutically acceptable salts, hydrates and partial hydrates thereof. The antibody and bisphosphonate act synergistically in the treatment of cancer metastases to bone and symptomatic sequelae thereof and particularly as regards bone resorption.
摘要翻译：治疗有效量的选自PTHrp，TGFα，IL-1α，IL-1β，IL-6，淋巴毒素，TNF，PGE的化合物的抗体; 1,25二羟基维生素D 3及其抗原性片段用于治疗癌症转移至骨骼和骨细胞中的癌细胞，以及骨溶解及其症状后遗症。与甲状旁腺激素相关蛋白（PTHrp）免疫反应的抗体是特别优选的。具有人类特征的抗体包括在本发明中，用于将本发明方法应用于人类受试者。此外，抗体可以以可注射的制剂与治疗有效量的具有以下通式结构式的二膦酸盐或焦磷酸盐组合施用：其中X是允许膦酸酯基团互连的连接部分，以及药学上可接受的盐，水合物和其部分水合物。抗体和双膦酸盐协同作用于治疗癌症转移至骨骼及其有症状的后遗症，特别是关于骨吸收。

34. 发明授权

US06777250B1 Manufacture of wafer level semiconductor device with quality markings on the sealing resin 有权
公开(公告)号：US06777250B1
公开(公告)日：2004-08-17
申请号：US09686958
申请日：2000-10-12
申请人： Shinsuke Nakajyo , Yoshiyuki Yoneda , Hideharu Sakoda
发明人： Shinsuke Nakajyo , Yoshiyuki Yoneda , Hideharu Sakoda
IPC分类号： H01L2166
CPC分类号： H01L22/20 , H01L2223/5448 , H01L2224/274
摘要： A method of manufacturing semiconductor device in the method of manufacturing wafer level semiconductor device that can search the defective products from the marking information even when sealing resin is formed on the wafer and a semiconductor device manufactured with the same method. A method of manufacturing wafer level semiconductor comprises a process to seal with a resin material the surface of wafer having the front surface and rear surface and forming a plurality of semiconductor chips on the front surface, a first marking process for marking the position information corresponding to each chip to the region of each chip at the rear surface of the wafer, a process for performing the electrical test to each chip, a second marking process for marking the result of the electrical test to the region of each chip at the rear surface of the wafer and a dicing process for dicing the wafer to each chip.

35. 发明授权

US06756378B2 VLA-4 inhibitor compounds 失效
标题翻译： VLA-4抑制剂化合物
公开(公告)号：US06756378B2
公开(公告)日：2004-06-29
申请号：US10034585
申请日：2001-12-28
申请人： John J. Baldwin , Edward McDonald , Kevin Joseph Moriarty , Christopher Ronald Sarko , Nobuo Machinaga , Atsushi Nakayama , Jun Chiba , Shin Iimura , Yoshiyuki Yoneda
发明人： John J. Baldwin , Edward McDonald , Kevin Joseph Moriarty , Christopher Ronald Sarko , Nobuo Machinaga , Atsushi Nakayama , Jun Chiba , Shin Iimura , Yoshiyuki Yoneda
IPC分类号： C07D20712
CPC分类号： C07D207/08 , C07C275/42 , C07C2601/02 , C07D207/09 , C07D207/12 , C07D207/14 , C07D207/16 , C07D207/22 , C07D207/24 , C07D209/12 , C07D211/26 , C07D211/34 , C07D211/38 , C07D213/55 , C07D217/02 , C07D277/04 , C07D277/28 , C07D277/48 , C07D295/13 , C07D295/185 , C07D307/33 , C07D311/20 , C07D401/06 , C07D401/12 , C07D401/14 , C07D403/02 , C07D413/06 , C07D491/04
摘要： Compounds that selectively inhibit the binding of ligands to &agr;4&bgr;1 integrin (VLA-4) and methods for their preparation are disclosed. In one embodiment, compounds of the invention are represented by Formula I: As selective inhibitors of VLA-4 mediated cell adhesion, compounds of the present invention are useful in the treatment of conditions associated with such adhesion, including, but not limited to, such conditions as inflammatory and autoimmune responses, diabetes, asthma, psoriasis, inflammatory bowel disease, transplantation rejection, and tumor metastasis. Also disclosed are pharmaceutical compositions, methods of inhibiting VLA-4 mediated cell adhesion and methods of treating conditions associated with LA-4 mediated cell adhesion, which involve compounds of Formula I.
摘要翻译：公开了选择性抑制配体与α4β1整联蛋白（VLA-4）的结合的化合物及其制备方法。在一个实施方案中，本发明的化合物由式I表示：作为VLA-4介导的细胞粘附的选择性抑制剂，本发明的化合物可用于治疗与这种粘附相关的病症，包括但不限于此作为炎症和自身免疫反应的病症，糖尿病，哮喘，牛皮癣，炎性肠病，移植排斥反应和肿瘤转移。还公开了药物组合物，抑制VLA-4介导的细胞粘附的方法和治疗与LA-4介导的细胞粘附相关的病症的方法，涉及式I化合物。

36. 发明授权

US5891758A Semiconductor device and method for manufacturing semiconductor device 失效
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US5891758A
公开(公告)日：1999-04-06
申请号：US962395
申请日：1997-10-31
申请人： Toshiyuki Honda , Akihiro Oku , Takanori Watanabe , Kazuto Tsuji , Yoshiyuki Yoneda
发明人： Toshiyuki Honda , Akihiro Oku , Takanori Watanabe , Kazuto Tsuji , Yoshiyuki Yoneda
IPC分类号： H01L23/12 , H01L21/56 , H01L21/68 , H01L23/31 , H01L21/44 , H01L21/48 , H01L21/50
CPC分类号： H01L21/568 , H01L21/565 , H01L23/3107 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/49109 , H01L2224/49171 , H01L2224/73265 , H01L2924/181 , H01L2924/18165 , Y10T29/49169
摘要： A method of manufacturing a semiconductor device includes the steps of: mounting a semiconductor chip on a holding board having electrode accommodation recesses formed thereon, and mounting electrode members to the electrode accommodation recesses, the electrode members being formed separately from the semiconductor element; electrically connecting electrode pads formed on the semiconductor chip with the electrode members; forming a resin package for sealing the semiconductor chip on the holding board by using a die, the holding board serving as a part of the die; and separating the resin package including the electrode members from the holding board. A semiconductor device includes: a semiconductor chip; a resin package for sealing the semiconductor chip; electrode members which are embedded in and held by the resin package and which are partly exposed from a mounting surface so as to form external connection terminals; and connecting parts electrically connecting electrode pads on the semiconductor chip with the electrode members.
摘要翻译：一种制造半导体器件的方法包括以下步骤：将半导体芯片安装在其上形成有电极容纳凹部的保持板上，以及将电极构件安装到电极容置凹部，电极构件与半导体元件分开形成; 将形成在半导体芯片上的电极焊盘与电极部件电连接; 通过使用模具形成用于将所述保持板上的半导体芯片密封的树脂封装，所述保持板用作所述管芯的一部分; 以及将包括电极构件的树脂封装从保持板分离。半导体器件包括：半导体芯片; 用于密封半导体芯片的树脂封装; 电极构件，其嵌入并保持在树脂封装中，并且从安装表面部分露出以形成外部连接端子; 以及将半导体芯片上的电极焊盘与电极部件电连接的部分。

37. 发明授权

US5654243A Process for fabricating a semiconductor device in a resin package housed in a frame having high conductivity 失效
标题翻译：用于在容纳在具有高导热性的框架中的树脂封装中制造半导体器件的工艺
公开(公告)号：US5654243A
公开(公告)日：1997-08-05
申请号：US696598
申请日：1996-08-14
申请人： Yoshiyuki Yoneda , Kazuto Tsuji
发明人： Yoshiyuki Yoneda , Kazuto Tsuji
IPC分类号： H01L23/28 , H01L23/08 , H01L23/12 , H01L23/24 , H01L23/31 , H01L23/367 , H01L23/433 , H01L23/498 , H05K1/02 , H05K3/30 , H05K3/34 , H01L21/60
CPC分类号： H01L23/24 , H01L23/3128 , H01L23/367 , H01L23/4334 , H01L23/49816 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48235 , H01L2224/73265 , H01L24/48 , H01L2924/00014 , H01L2924/09701 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H05K1/0201 , H05K3/303 , H05K3/3431 , Y10T29/49144 , Y10T29/49146
摘要： A semiconductor device including a substrate, solder bumps provided on a lower major surface of the substrate, a semiconductor chip provided on an upper major surface of the substrate, a resin package body provided on the upper major surface of the substrate so as to bury the semiconductor chip therein, a thermally conductive frame member having a flange part supporting the substrate of a rim part of the substrate, wherein the thermal conductive frame member has a thermal conductivity substantially larger than that of the resin package body and extending along to and in an intimate contact with side walls of the resin package body.
摘要翻译：一种半导体器件，包括衬底，设置在衬底的下主表面上的焊料凸块，设置在衬底的上主表面上的半导体芯片，设置在衬底的上主表面上的树脂封装体，以便将衬底半导体芯片，导热框架构件，其具有支撑衬底的边缘部分的衬底的凸缘部分，其中导热框架构件的热导率基本上大于树脂封装主体的导热系数，并且延伸到与树脂封装体的侧壁紧密接触。

38. 发明授权

US08404496B2 Method of testing a semiconductor device and suctioning a semiconductor device in the wafer state 有权
标题翻译：测试半导体器件并在晶片状态下抽吸半导体器件的方法
公开(公告)号：US08404496B2
公开(公告)日：2013-03-26
申请号：US11439119
申请日：2006-05-24
申请人： Shigeyuki Maruyama , Yasuyuki Itoh , Tetsurou Honda , Kazuhiro Tashiro , Makoto Haseyama , Kenichi Nagashige , Yoshiyuki Yoneda , Hirohisa Matsuki
发明人： Shigeyuki Maruyama , Yasuyuki Itoh , Tetsurou Honda , Kazuhiro Tashiro , Makoto Haseyama , Kenichi Nagashige , Yoshiyuki Yoneda , Hirohisa Matsuki
IPC分类号： G01R31/26
CPC分类号： H01L22/12 , G01R31/2891 , H01L21/67282 , H01L21/6838 , H01L22/32 , H01L23/544 , H01L24/97 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2223/5448 , H01L2223/54493 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05647 , H01L2224/16 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , Y10T29/49998 , Y10T279/11 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A semiconductor device has an alignment mark which can be recognized by a conventional wafer prober. A redistribution layer connects electrodes of the semiconductor device to electrode pads located in predetermined positions of the redistribution layer. Metal posts configured to be provided with external connection electrodes are formed on the electrode pads of the redistribution layer. A mark member made of the same material as the metal posts is formed on the redistribution layer. The mark member serves as an alignment mark located in a predetermined positional relationship with the metal posts.
摘要翻译：半导体器件具有可以被常规晶片探测器识别的对准标记。再分布层将半导体器件的电极连接到位于再分布层的预定位置的电极焊盘。在再分配层的电极焊盘上形成配置有外部连接电极的金属柱。在再分布层上形成由与金属柱相同的材料制成的标记构件。标记构件用作与金属柱形成预定位置关系的对准标记。

39. 发明申请

US20100076202A1 METHOD FOR PRODUCING PYRROLIDINE DERIVATIVE 审中-公开
标题翻译：吡咯烷衍生物的制备方法
公开(公告)号：US20100076202A1
公开(公告)日：2010-03-25
申请号：US12628251
申请日：2009-12-01
申请人： Yoshihiro TAKAYANAGI , Toshihide Yamada , Yukito Furuya , Yoshiyuki Yoneda
发明人： Yoshihiro TAKAYANAGI , Toshihide Yamada , Yukito Furuya , Yoshiyuki Yoneda
IPC分类号： C07D403/12 , C07D207/12
CPC分类号： C07D207/12
摘要： The present invention provides an advantageous method for producing an intermediate which is useful for production of a compound which exhibits excellent VLA-4 inhibitory effect and safety.An intermediate (14) is produced through the following reaction scheme.
摘要翻译：本发明提供一种生产中间体的有利方法，其可用于生产具有优异的VLA-4抑制效果和安全性的化合物。通过以下反应方案制备中间体（14）。

40. 发明申请

US20080174001A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20080174001A1
公开(公告)日：2008-07-24
申请号：US12076033
申请日：2008-03-13
申请人： Yoshitaka Aiba , Tetsuya Fujisawa , Yoshiyuki Yoneda
发明人： Yoshitaka Aiba , Tetsuya Fujisawa , Yoshiyuki Yoneda
IPC分类号： H01L23/498
CPC分类号： H01L23/5226 , H01L23/3128 , H01L23/49816 , H01L23/49827 , H01L23/5384 , H01L23/552 , H01L23/66 , H01L24/48 , H01L24/73 , H01L25/18 , H01L2224/0401 , H01L2224/05001 , H01L2224/05008 , H01L2224/05022 , H01L2224/05023 , H01L2224/05548 , H01L2224/05568 , H01L2224/05647 , H01L2224/13021 , H01L2224/16225 , H01L2224/16235 , H01L2224/16238 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48235 , H01L2224/73253 , H01L2224/73265 , H01L2924/00014 , H01L2924/01004 , H01L2924/01019 , H01L2924/15174 , H01L2924/15184 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01L2924/00 , H01L2924/00012 , H01L2224/05099 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device is disclosed that includes a support substrate, a first semiconductor element that is mounted on one side of the support substrate, a second semiconductor element including a high frequency electrode that is mounted on the one side of the support substrate, a via hole that is provided at the support substrate in relation to the high frequency electrode, and an external connection electrode that is provided on the other side of the support substrate in relation to the via hole.
摘要翻译：公开了一种半导体器件，其包括支撑衬底，安装在支撑衬底的一侧的第一半导体元件，包括安装在支撑衬底一侧的高频电极的第二半导体元件，通孔相对于高频电极设置在支撑基板上，以及外部连接电极，其设置在相对于通孔的支撑基板的另一侧。

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