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31. 发明授权

US08027110B1 Apparatus for measuring magnetic field of microwave-assisted head 有权
标题翻译：用于测量微波辅助头磁场的装置
公开(公告)号：US08027110B1
公开(公告)日：2011-09-27
申请号：US12844348
申请日：2010-07-27
申请人： Noboru Yamanaka , Tomoyuki Sasaki , Takuya Adachi , Isamu Sato , Hiroshi Ikeda
发明人： Noboru Yamanaka , Tomoyuki Sasaki , Takuya Adachi , Isamu Sato , Hiroshi Ikeda
IPC分类号： G11B27/36
CPC分类号： G01R33/091 , G11B5/314 , G11B2005/0024
摘要： A measurement circuit system of a magnetic field measurement apparatus of the present invention includes an amplifier, a mixer circuit and a band-pass filter that are connected in order on an output end side of a microstrip line or a coplanar wave guide, which is an in-plane high frequency magnetic field intensity measurement element, a frequency immediately before being inputted in the band-pass filter is down-converted by the mixer circuit to a frequency so that a band width of the band-pass filter can be used, the band-pass filter uses a narrow band of ±0.5-±10 KHz (1 KHz-20 KHz as a bandwidth) centering a fundamental frequency selected from 5-20 MHz that is down-converted by the mixer circuit as a center peak passing frequency, and the measurement circuit system is configured to obtain 3 dB or greater of a signal-to-noise ratio (SNR) that is a ratio of S with N; where S represents the reproduction voltage (reproduction output) of the high frequency reproduction signal induced by the in-plane high frequency magnetic field intensity measurement element, and N represents a total noise voltage of a circuit noise including a noise generated by the in-plane high frequency magnetic field intensity measurement element. Therefore, the in-plane high frequency magnetic field that a microwave-assisted magnetic head generates can be measured with high reliability and precision.
摘要翻译：本发明的磁场测量装置的测量电路系统包括在微带线或共面波导的输出端侧依次连接的放大器，混频器电路和带通滤波器，它是在平面内的高频磁场强度测量元件中，紧接在带通滤波器中输入的频率由混频器电路下变频到频率，使得可以使用带通滤波器的带宽，带通滤波器采用±0.5〜10KHz（1KHz-20KHz作为带宽）的中心峰值通过频率，该频带以选择5-20MHz的基频为中心，由频率调制器电路进行下变频并且测量电路系统被配置为获得S与N的比率的3dB或更大的信噪比（SNR）; 其中S表示由面内高频磁场强度测量元件感应的高频再现信号的再现电压（再现输出），N表示包括由平面内高频磁场强度测量元件产生的噪声的电路噪声的总噪声电压高频磁场强度测量元件。因此，可以高可靠性和精度地测量微波辅助磁头产生的平面内高频磁场。

32. 发明申请

US20110016965A1 Coin recognizing device and coin recognizing method 有权
标题翻译：硬币识别装置和硬币识别方法
公开(公告)号：US20110016965A1
公开(公告)日：2011-01-27
申请号：US12736353
申请日：2008-04-02
申请人： Tomoyuki Sasaki
发明人： Tomoyuki Sasaki
IPC分类号： G07D5/00
CPC分类号： G07D5/00 , G07D5/08
摘要： A coin recognizing device is configured in which a main-judgment-frame registration unit registers main judgment frames for each denomination including value ranges corrected so that a value range corresponding to data of at least one of recognition elements does not overlap with a value range corresponding to the same recognition element of any other denominations, an auxiliary-judgment-frame registration unit registers auxiliary judgment frames for each denomination including value ranges of the recognition elements of a coin of which data does not fall within the main judgment frames but is to be judged as a coin of a specific denomination, a reject-judgment-frame registration unit registers reject judgment frames for each denomination including value ranges of the recognition elements of a coin of which data falls within the main judgment frames or the auxiliary judgment frames but is not to be judged as a coin of a specific denomination, and a judging unit judges a coin of which data falls within either the main judgment frames or the auxiliary judgment frames and does not fall into the reject judgment frames as a coin corresponding to the main judgment frame.
摘要翻译：一种硬币识别装置，其中主判断帧注册单元登记每个面值的主要判断帧，包括校正的值范围，使得与识别元件中的至少一个的数据相对应的值范围与对应的值范围不重叠辅助判断帧注册单元对于包括数据不在主要判断帧内的硬币的识别元素的值范围的每个面额登记辅助判断帧，但是将被设置为与其他面额相同的识别元素判定为特定面额的硬币的情况下，拒绝判定帧登记部对于包含数据属于主判断帧或辅助判断帧的硬币的识别元素的值范围的每个面额登记拒绝判断帧，不被判断为特定面额的硬币，判断单元判断d的硬币 ata落在主判断帧或辅助判断帧之内，并且不作为与主判断帧对应的硬币落入拒绝判断帧。

33. 发明申请

US20100327333A1 SPIN TRANSPORT DEVICE 有权
标题翻译：旋转运输装置
公开(公告)号：US20100327333A1
公开(公告)日：2010-12-30
申请号：US12821466
申请日：2010-06-23
申请人： Tomoyuki Sasaki , Tohru Oikawa , Katsumichi Tagami
发明人： Tomoyuki Sasaki , Tohru Oikawa , Katsumichi Tagami
IPC分类号： H01L29/82
CPC分类号： H01L27/22 , B82Y25/00 , G11C11/161 , H01F10/3254
摘要： A spin transport device which comprises a channel, first and second insulating layers, a magnetization fixed layer, a magnetization free layer, first and second wirings, and satisfies at least one of following conditions A and B, Condition A: The first wiring includes a vertical portion which extends in a thickness direction of the magnetization fixed layer on the magnetization fixed layer, and a horizontal portion which extends from the vertical portion that is apart from the magnetization fixed layer side in a direction crossing the thickness direction of the magnetization fixed layer, and Condition B: The second wiring includes a vertical portion which extends in a thickness direction of the magnetization free layer on the magnetization free layer, and a horizontal portion which extends from the vertical portion that is apart from the magnetization free layer side in a direction crossing the thickness direction of the magnetization free layer.
摘要翻译：一种自旋传输装置，包括通道，第一和第二绝缘层，磁化固定层，磁化自由层，第一和第二布线，并且满足以下条件A和B中的至少一个条件A：第一布线包括在磁化固定层的磁化固定层的厚度方向上延伸的垂直部分和从与磁化固定层侧分离的垂直部分在与磁化固定层的厚度方向交叉的方向上延伸的水平部分和条件B：第二布线包括在磁化自由层上的磁化自由层的厚度方向上延伸的垂直部分和从远离磁化自由层侧的垂直部分延伸的水平部分方向与磁化自由层的厚度方向交叉。

34. 发明授权

US07639451B2 Thin-film magnetic head, head gimbal assembly, and hard disk system 有权
标题翻译：薄膜磁头，磁头万向节装配和硬盘系统
公开(公告)号：US07639451B2
公开(公告)日：2009-12-29
申请号：US11668820
申请日：2007-01-30
申请人： Hideyuki Yatsu , Akifumi Kamijima , Hitoshi Hatate , Tomoyuki Sasaki
发明人： Hideyuki Yatsu , Akifumi Kamijima , Hitoshi Hatate , Tomoyuki Sasaki
IPC分类号： G11B5/147
CPC分类号： G11B5/1278 , G11B5/3116
摘要： There is a thin-film magnetic head provided, which comprises a perpendicular recording head portion including a thin-film coil adapted to generate a magnetic flux, and a main magnetic pole layer that extends rearward from a recording medium opposite plane facing a recording medium and has a main magnetic pole adapted to release a magnetic flux produced at the thin-film coil toward the recording medium. A given concave groove form that is more constricted as the lower end draws nearer is provided at or near the flare point of the front end of the main magnetic pole, so that the flow of the magnetic flux through the main magnetic pole is focused on the upper end edge (gap portion), thereby improving overwrite performance and holding back the occurrence of pole erasure.
摘要翻译：提供了一种薄膜磁头，其包括垂直记录头部分，该垂直记录头部分包括适于产生磁通量的薄膜线圈，以及从与记录介质相对的记录介质向后延伸的主磁极层，以及具有适于将在薄膜线圈处产生的磁通朝向记录介质释放的主磁极。在主磁极的前端的喇叭口处或附近设置由于下端越靠近而更加收缩的给定的凹槽形状，使得通过主磁极的磁通量的流动聚焦在上端边缘（间隙部分），从而提高覆盖性能并阻止磁极擦除的发生。

35. 发明授权

US07620192B2 Electret covered with an insulated film and an electret condenser having the electret 有权
标题翻译：驻极体覆盖有绝缘膜和驻极体的驻极体电容器
公开(公告)号：US07620192B2
公开(公告)日：2009-11-17
申请号：US10576518
申请日：2004-11-12
申请人： Tohru Yamaoka , Hiroshi Ogura , Yuichi Miyoshi , Tomoyuki Sasaki
发明人： Tohru Yamaoka , Hiroshi Ogura , Yuichi Miyoshi , Tomoyuki Sasaki
IPC分类号： H04R25/00
CPC分类号： H01G5/0136 , H01G5/16 , H01G7/025 , H04R19/016 , H04R2499/11
摘要： A silicon nitride film (103) and a silicon nitride film (106) are formed to cover a charged silicon oxide film (105) serving as an electret.
摘要翻译：形成氮化硅膜（103）和氮化硅膜（106），以覆盖用作驻极体的带电氧化硅膜（105）。

36. 发明授权

US07119020B2 Method for fabricating semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07119020B2
公开(公告)日：2006-10-10
申请号：US10720197
申请日：2003-11-25
申请人： Hideaki Okamura , Takao Yamaguchi , Tomoyuki Sasaki
发明人： Hideaki Okamura , Takao Yamaguchi , Tomoyuki Sasaki
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/0274 , H01L21/31144
摘要： A silicon oxide film is formed on a semiconductor substrate made of silicon. Subsequently, a resist film containing carbon is formed on the silicon oxide film, and thereafter the formed resist film is patterned, thereby forming a resist pattern. Subsequently, the resist pattern is exposed to a sulfur dioxide gas, and then dry etching is performed on the silicon oxide film by using the resist pattern exposed to the sulfur dioxide gas as a mask.
摘要翻译：在由硅制成的半导体衬底上形成氧化硅膜。随后，在氧化硅膜上形成含有碳的抗蚀剂膜，然后对所形成的抗蚀剂膜进行图案化，从而形成抗蚀剂图案。随后，将抗蚀剂图案暴露于二氧化硫气体，然后通过使用暴露于二氧化硫气体的抗蚀剂图案作为掩模对氧化硅膜进行干法蚀刻。

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