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31. 发明申请

US20070014915A1 Method of Surface Treating Substrates and Method of Manufacturing III-V Compound Semiconductors 失效
标题翻译：表面处理基板的方法和制造III-V复合半导体的方法
公开(公告)号：US20070014915A1
公开(公告)日：2007-01-18
申请号：US11425394
申请日：2006-06-21
申请人： Takayuki Nishiura , Tomoki Uemura
发明人： Takayuki Nishiura , Tomoki Uemura
IPC分类号： A61L33/00
CPC分类号： H01L21/02052 , Y10S438/906
摘要： Affords methods of surface treating a substrate and of manufacturing Group III-V compound semiconductors, in which a substrate made of a Group III-V semiconductor compound is rendered stoichiometric, and microscopic roughness on the surface following epitaxial growth is reduced. The methods include preparing a substrate made of a Group III-V semiconductor compound (S10), and cleaning the substrate with a cleaning solution whose pH has been adjusted to an acidity of 2 to 6.3 inclusive, and to which an oxidizing agent has been added (S20).
摘要翻译：提供表面处理基板和制造III-V族化合物半导体的方法，其中由III-V族半导体化合物制成的基板被化学计量，并且在外延生长之后表面上的微观粗糙度降低。所述方法包括制备由III-V族半导体化合物（S10）制成的衬底，并用pH调节至2〜6.3的含量的清洁溶液清洗该衬底，并将氧化剂添加（S 20）。

32. 发明授权

US06717009B2 Method for making high-purity naphthalenedicarboxylic acid 失效
标题翻译：制备高纯度萘二羧酸的方法
公开(公告)号：US06717009B2
公开(公告)日：2004-04-06
申请号：US10265401
申请日：2002-10-07
申请人： Masahiro Motoyuki , Tomoki Uemura , Koji Yamamoto
发明人： Masahiro Motoyuki , Tomoki Uemura , Koji Yamamoto
IPC分类号： C07C5142
CPC分类号： C07C51/487 , C07C51/265 , C07C51/43 , C07C51/47 , C07C63/26 , C07C63/38
摘要： A high-purity naphthalenedicarboxylic acid is produced by a method including Steps [1] and [2]: In Step [I], a raw mixture of crude terephthalic acid and crude naphthalenedicarboxylic acid is dissolved into high-temperature high-pressure water to form a dibasic acid solution wherein the crude naphthalenedicarboxylic acid content is 0.1 to 10 mass percent of the crude terephthalic acid content, the dibasic acid solution is brought into contact with hydrogen in the presence of a catalyst. In Step [II], the resultant in the dibasic acid solution is crystallized by multiple stages while the temperature and the pressure are reduced for each stage, and acid mixtures containing enriched naphthalenedicarboxylic acid or enriched terephthalic acid are obtained by solid-liquid separation.
摘要翻译：通过包括步骤[1]和[2]的方法制备高纯度萘二羧酸：在步骤[I]中，将粗对苯二甲酸和粗萘二甲酸的粗混合物溶解在高温高压水中形成二萘酸溶液，其中粗萘二羧酸含量为粗对苯二甲酸含量的0.1〜10质量％，二元酸溶液在催化剂存在下与氢接触。在步骤[II]中，将二元酸溶液中的所得物在多个阶段中结晶，同时每个阶段降低温度和压力，通过固液分离获得含有富含萘二甲酸或富对苯二甲酸的酸混合物。

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