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31. 发明申请

US20100051975A1 Layered semiconductor light emitting device and image forming apparatus 有权
标题翻译：层状半导体发光元件及成像装置
公开(公告)号：US20100051975A1
公开(公告)日：2010-03-04
申请号：US12461894
申请日：2009-08-27
申请人： Takahito Suzuki , Tomoki Igari
发明人： Takahito Suzuki , Tomoki Igari
IPC分类号： H01L33/00
CPC分类号： H01L25/0756 , H01L33/44 , H01L33/54 , H01L2924/0002 , H01L2924/00
摘要： A layered semiconductor light emitting device includes a plurality of semiconductor light emitting elements each of which includes a light emitting region that converts electricity into light and emits the light. The semiconductor light emitting elements are layered in a layering direction perpendicular to the light emitting regions, and are bonded to each other via a planarizing layer having electrical insulation property. The planarizing layer includes a first planarizing region disposed above or below the light emitting regions of the semiconductor light emitting elements in the layering direction and formed of a first planarizing film having higher refractive index than air, and a second planarizing region other than the first planarizing region and formed of a second planarizing film having lower refractive index than the first planarizing film. In the layering direction, the upper semiconductor light emitting element transmits light emitted by the lower semiconductor light emitting element.
摘要翻译：层状半导体发光器件包括多个半导体发光元件，每个半导体发光元件包括将电转换成光并发光的发光区域。半导体发光元件以垂直于发光区域的分层方向层叠，并且通过具有电绝缘性的平坦化层彼此接合。平坦化层包括：第一平坦化区域，其设置在层叠方向上的半导体发光元件的发光区域的上方或下方，并且由具有比空气更高的折射率的第一平坦化膜形成，以及除了第一平坦化之外的第二平坦化区域并且由折射率低于第一平坦化膜的第二平坦化膜形成。在层叠方向上，上半导体发光元件透射由下半导体发光元件发射的光。

32. 发明授权

US08269229B2 Layered semiconductor light emitting device and image forming apparatus 有权
标题翻译：层状半导体发光元件及成像装置
公开(公告)号：US08269229B2
公开(公告)日：2012-09-18
申请号：US12461894
申请日：2009-08-27
申请人： Takahito Suzuki , Tomoki Igari
发明人： Takahito Suzuki , Tomoki Igari
IPC分类号： H01L33/00
CPC分类号： H01L25/0756 , H01L33/44 , H01L33/54 , H01L2924/0002 , H01L2924/00
摘要： A layered semiconductor light emitting device includes a plurality of semiconductor light emitting elements each of which includes a light emitting region that converts electricity into light and emits the light. The semiconductor light emitting elements are layered in a layering direction perpendicular to the light emitting regions, and are bonded to each other via a planarizing layer having electrical insulation property. The planarizing layer includes a first planarizing region disposed above or below the light emitting regions of the semiconductor light emitting elements in the layering direction and formed of a first planarizing film having higher refractive index than air, and a second planarizing region other than the first planarizing region and formed of a second planarizing film having lower refractive index than the first planarizing film. In the layering direction, the upper semiconductor light emitting element transmits light emitted by the lower semiconductor light emitting element.
摘要翻译：层状半导体发光器件包括多个半导体发光元件，每个半导体发光元件包括将电转换成光并发光的发光区域。半导体发光元件以垂直于发光区域的分层方向层叠，并且通过具有电绝缘性的平坦化层彼此接合。平坦化层包括：第一平坦化区域，其设置在层叠方向上的半导体发光元件的发光区域的上方或下方，并且由具有比空气更高的折射率的第一平坦化膜形成，以及除了第一平坦化之外的第二平坦化区域并且由折射率低于第一平坦化膜的第二平坦化膜形成。在层叠方向上，上半导体发光元件透射由下半导体发光元件发射的光。

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