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31. 发明授权

US5706189A Method of driving a power converter 失效
标题翻译：驱动电源转换器的方法
公开(公告)号：US5706189A
公开(公告)日：1998-01-06
申请号：US675719
申请日：1996-07-02
申请人： Gourab Majumdar , Shinji Hatae
发明人： Gourab Majumdar , Shinji Hatae
IPC分类号： H02M7/537 , H02M7/5387 , H03K17/06 , H03K17/082 , H02M7/219
CPC分类号： H02M7/5387 , H03K17/0828
摘要： Disclosed is a method of driving a power converter which can simplify a charging sequence of a charge pump capacitor to reduce the time required to design the device without using a voltage protective circuit and optimum design required to determine the capacitance of the charge pump capacitor. A charging pulse signal for a capacitor (CP) is provided as an input signal from an external control device (EC) substantially simultaneously as a control power source (PS) is switched on to provide a predetermined control power source voltage (V.sub.PS). A driver circuit (DR20) outputs a control signal (V.sub.D) to turn on a transistor (Q2) in a pulse-like manner, starting charging the capacitor (CP). The charging pulse signal continues being provided after completion of the charging of the capacitor (CP) and stops being provided immediately before a PWM signal is provided.
摘要翻译：公开了一种驱动功率转换器的方法，其可以简化电荷泵电容器的充电顺序，以减少设计器件所需的时间，而不使用电压保护电路和确定电荷泵电容器的电容所需的最佳设计。当控制电源（PS）接通时，用于电容器（CP）的充电脉冲信号基本上同时作为来自外部控制装置（EC）的输入信号提供，以提供预定的控制电源电压（VPS）。驱动电路（DR20）以类似脉冲的方式输出控制信号（VD）以接通晶体管（Q2），开始对电容器（CP）充电。在电容器（CP）的充电完成之后继续提供充电脉冲信号，并且在提供PWM信号之前停止提供充电脉冲信号。

32. 发明授权

US5055721A Drive circuit for IGBT device 失效
标题翻译： IGBT器件驱动电路
公开(公告)号：US5055721A
公开(公告)日：1991-10-08
申请号：US422685
申请日：1989-10-17
申请人： Gourab Majumdar , Shigekazu Yoshida
发明人： Gourab Majumdar , Shigekazu Yoshida
IPC分类号： H03K17/00 , H03K17/082
CPC分类号： H03K17/0828 , H03K2217/0036
摘要： A MOS transistor (Q.sub.M) detects an increase of the collector current (I.sub.C) of an IGBT device (Q.sub.O). When an excess current passes, the transistor (Q.sub.M) turns on, which restricts the gate voltage (V.sub.G) of the IGBT device (Q.sub.O) to decrease the collector current (I.sub.C). This protects the IGBT device (Q.sub.O) from the excess current. A Zener diode (D.sub.Z) placed on a path which is for detecting the excess current of the IGBT device (Q.sub.O) restricts the current passing through the path. This decreases reactive power which is consumed in protecting the device (Q.sub.O) from the excess current while protecting a drive circuit from an erroneous operation.

33. 发明授权

US4902921A Drive circuit for driving cascode bipolar-MOS circuit 失效
标题翻译：驱动电路驱动共源共栅双极MOS电路
公开(公告)号：US4902921A
公开(公告)日：1990-02-20
申请号：US195286
申请日：1988-05-17
申请人： Takahiro Hiramoto , Gourab Majumdar
发明人： Takahiro Hiramoto , Gourab Majumdar
IPC分类号： H03K17/56 , H03K17/04 , H03K17/567 , H03K17/60 , H03K17/615
CPC分类号： H03K17/567 , H03K17/0406 , H03K17/615
摘要： The drive circuit for driving a cascode bipolar MOS circuit (1) has a bipolar transistor (21) coupled to a bipolar transistor (11) in the bipolar MOS circuit (1) through a Darlington connection. A base current for the bipolar transistor (11) is supplied through the other bipolar transistor (21), without a transformer.
摘要翻译：用于驱动级联双极MOS电路（1）的驱动电路具有通过达林顿连接在双极MOS电路（1）中耦合到双极晶体管（11）的双极晶体管（21）。双极晶体管（11）的基极电流通过另一双极晶体管（21）提供，而没有变压器。

34. 发明申请

US20120074428A1 SEMICONDUCTOR MODULE INCLUDING A SWITCH AND NON-CENTRAL DIODE 有权
标题翻译：包括开关和非中心二极管的半导体模块
公开(公告)号：US20120074428A1
公开(公告)日：2012-03-29
申请号：US13311762
申请日：2011-12-06
申请人： Kiyoshi Arai , Gourab Majumdar
发明人： Kiyoshi Arai , Gourab Majumdar
IPC分类号： H01L29/16
CPC分类号： H01L27/0664 , H01L21/8213 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/071 , H01L25/074 , H01L25/18 , H01L29/6606 , H01L29/861 , H01L29/872 , H01L2224/32145 , H01L2224/371 , H01L2224/37147 , H01L2224/40095 , H01L2224/40225 , H01L2224/40227 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/49107 , H01L2224/73263 , H01L2224/73265 , H01L2225/06562 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01068 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/10272 , H01L2924/12032 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/00 , H01L2224/83801
摘要： A semiconductor module having one or more silicon carbide diode elements mounted on a switching element is provided in which the temperature rise is reduced by properly disposing each of the diode elements on the switching element, to thereby provide a thermal dissipation path for the respective diode elements. The respective diode elements are arranged on a non-central portion of the switching element, to facilitate dissipation of the heat produced by each of the diode elements, whereby the temperature rise in the semiconductor module is reduced.
摘要翻译：提供了一种具有安装在开关元件上的一个或多个碳化硅二极管元件的半导体模块，其中通过将开关元件中的每个二极管元件适当地布置来降低温度上升，从而为各个二极管元件提供散热路径。各个二极管元件布置在开关元件的非中心部分上，以便于散发由每个二极管元件产生的热量，从而降低半导体模块中的温度升高。

35. 发明申请

US20080024078A1 Power Conversion Device and Vehicle Equipped Therewith 失效
标题翻译：电力转换装置及配备的车辆
公开(公告)号：US20080024078A1
公开(公告)日：2008-01-31
申请号：US11579272
申请日：2005-05-18
申请人： Hichirosai Oyobe , Tetsuhiro Ishikawa , Tsuyoshi Yano , Masahiro Kimata , Gourab Majumdar , Yoshiharu Yu
发明人： Hichirosai Oyobe , Tetsuhiro Ishikawa , Tsuyoshi Yano , Masahiro Kimata , Gourab Majumdar , Yoshiharu Yu
IPC分类号： H02M7/797 , B60L11/18
CPC分类号： H02M7/487 , H02M7/797
摘要： A power conversion portion (10) and a connection portion (20) converting power between a fuel cell (FC) and a battery (BAT) corresponding to dc power supply and a motor generator (MG) corresponding to an ac machine, are configured of a matrix converter. For a power flow pattern requiring that the dc power supply provide high voltage, a switch (SCd) in the connection portion (20) operates in response to a control signal received from a control device (30) to electrically connect a power supply line (LC) to a power supply line (Ld) to connect the fuel cell (FC) and the battery (BAT) in series.
摘要翻译：在对应于直流电源的燃料电池（FC）和电池（BAT）之间转换功率的电力转换部分（10）和转换部分（20）和与交流电机对应的电动发电机（MG）矩阵转换器。对于要求直流电源提供高电压的功率流模式，连接部分（20）中的开关（SCd）响应于从控制装置（30）接收的控制信号而工作，以将电源线（ LC）连接到电源线（Ld）以将燃料电池（FC）和电池（BAT）串联连接。

36. 发明授权

US06522098B1 Controller for power device and drive controller for motor 失效
标题翻译：电机的控制器和电机的驱动控制器
公开(公告)号：US06522098B1
公开(公告)日：2003-02-18
申请号：US08775308
申请日：1996-12-31
申请人： Gourab Majumdar , Shinji Hatae , Tatsuo Oota , Masanori Fukunaga
发明人： Gourab Majumdar , Shinji Hatae , Tatsuo Oota , Masanori Fukunaga
IPC分类号： H02P100
CPC分类号： H02M7/538 , H01L2224/48091 , H01L2224/48247 , H01L2224/49111 , H03K17/063 , H03K17/567 , H03K17/6871 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device comprising at least one power device, at least one control element for controlling the power device(s), a plurality of first terminals connected to the power device(s), a plurality of second terminals connected to the control element(s), a support member having a heat sink disposed on a lower surface of the support member and the power device(s), control element(s), and first and second terminals arranged on the upper surface of the support member, and a package including the support member for sealing the devices and one end of the terminals such that first and second terminals protrude from different sides of the package. The arrangement allows a reduced size three-phase motor drive controller, a reduction in noise interference to the control element, and reduction in terminal pitch size.
摘要翻译：一种半导体器件，包括至少一个功率器件，用于控制功率器件的至少一个控制元件，连接到所述功率器件的多个第一端子，连接到所述功率器件的多个第二端子），具有设置在所述支撑构件的下表面上的散热器的支撑构件和所述动力装置，控制元件以及布置在所述支撑构件的上表面上的第一和第二端子，以及包装包括用于密封装置的支撑构件和端子的一端，使得第一和第二端子从包装的不同侧突出。该装置允许减小尺寸的三相电动机驱动控制器，降低对控制元件的噪声干扰以及减小端子间距尺寸。

37. 发明授权

US06291826B1 Semiconductor element for electric power with a diode for sensing temperature and a diode for absorbing static electricity 失效
标题翻译：用于感应温度的二极管用于电力的半导体元件和用于吸收静电的二极管
公开(公告)号：US06291826B1
公开(公告)日：2001-09-18
申请号：US09705755
申请日：2000-11-06
申请人： Mitsunori Kub{overscore (o)} , Takeshi Ohmaru , Takaaki Shirasawa , Gourab Majumdar
发明人： Mitsunori Kub{overscore (o)} , Takeshi Ohmaru , Takaaki Shirasawa , Gourab Majumdar
IPC分类号： G01T124
CPC分类号： H01L29/7804 , G01K7/015 , H01L23/34 , H01L24/48 , H01L24/49 , H01L27/0248 , H01L29/0692 , H01L29/0696 , H01L29/7395 , H01L2224/05553 , H01L2224/05599 , H01L2224/48 , H01L2224/49 , H01L2224/85399 , H01L2924/00014 , H01L2924/0102 , H01L2924/01068 , H01L2924/01084 , H01L2924/12036 , H01L2924/12041 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , Y10S323/907 , H01L2924/00 , H01L2224/45015 , H01L2924/207 , H01L2224/45099 , H01L2924/00012
摘要： A first diode part (1B) for sensing junction temperature and a second diode part (1C) for absorbing static electricity that are included in a semiconductor element (1) for electric power are formed within the same substrate together with a semiconductor element part (1A) for electric power. Moreover, the number of a plurality of second diodes (1CD) constituting the second diode part (1C) is equal to the number of a plurality of first diodes (1BD) constituting the first diode part (1B). In addition, a capacitor (11) for reducing the impedance is disposed between the input terminals of a forward direction voltage fall operating amplifying circuit part (4) of a controlling circuit part (8). Here, it is effective to form an LC low pass filter as well by covering a forward path side relay lead part (9A) and a backward path side relay lead part (9B) with one tubular ferrite core.
摘要翻译：用于感测结温的第一二极管部分（1B）和用于吸收电力的半导体元件（1）中包含的用于吸收静电的第二二极管部分（1C）与半导体元件部分（1A）形成在同一基板内）用于电力。此外，构成第二二极管部件（1C）的多个第二二极管（1CD）的数量等于构成第一二极管部件（1B）的多个第一二极管（1BD）的数量。此外，用于减小阻抗的电容器（11）设置在控制电路部分（8）的正向压降操作放大电路部分（4）的输入端之间。这里，通过用一个管状铁氧体磁芯覆盖正向路径侧继电器引线部分（9A）和反向路径侧继电器引线部分（9B）也可以形成LC低通滤波器。

38. 外观设计

USD418485S Semiconductor device 失效
公开(公告)号：USD418485S
公开(公告)日：2000-01-04
申请号：US100730
申请日：1999-02-17
申请人： Hisashi Kawafuji , Mitsutaka Iwasaki , Gourab Majumdar , Toshiaki Shinohara
设计人： Hisashi Kawafuji , Mitsutaka Iwasaki , Gourab Majumdar , Toshiaki Shinohara

39. 发明授权

US6005366A Controller for power device and drive controller for motor 失效
公开(公告)号：US6005366A
公开(公告)日：1999-12-21
申请号：US373435
申请日：1995-01-17
申请人： Gourab Majumdar , Shinji Hatae , Tatsuo Oota , Masanori Fukunaga
发明人： Gourab Majumdar , Shinji Hatae , Tatsuo Oota , Masanori Fukunaga
IPC分类号： H02M7/48 , H02M7/538 , H02M7/5387 , H02P27/06 , H03K17/06 , H03K17/567 , H03K17/687 , H02P5/28
CPC分类号： H02M7/538 , H03K17/063 , H03K17/567 , H03K17/6871 , H01L2224/48091 , H01L2224/48247 , H01L2224/49111
摘要： A controller for power devices which is not required to individually insulate high and low potential portions and to include an insulated power supply is disclosed. An external controller (6) is connected to a second internal control circuit (4) which is in turn connected to a level shift circuit (5) and a gate electrode of a transistor (Q2). Power supply voltage (V1) is applied to the second internal control circuit (4) for operation thereof. The level shift circuit (5) is connected to a first internal control circuit (3) which is in turn connected to a gate electrode of a transistor (Q1) and a charge pump circuit (7). Control of a first semiconductor circuit is made through the level shift means in response to an input signal generated on the basis of a second main power supply potential, thereby achieving increased responsiveness of the power devices to a control signal and improved integration.

40. 发明授权

US5786973A Semiconductor power module and compound power module 失效
标题翻译：半导体电源模块和复合电源模块
公开(公告)号：US5786973A
公开(公告)日：1998-07-28
申请号：US629756
申请日：1996-04-09
申请人： Gourab Majumdar , Takashi Marumo
发明人： Gourab Majumdar , Takashi Marumo
IPC分类号： H01L25/07 , H01L25/18 , H02H7/12 , H02M1/00 , H02M1/32 , H02M7/23 , H02M7/5387 , H02H3/00
CPC分类号： H02M7/493 , H02H7/1206 , H02M1/32 , H02M7/23 , H02M7/5387 , H01L2924/0002 , Y10T307/729
摘要： A semiconductor power module is configured to prevent concentration of load in a certain semiconductor power switching element. A diagnosis circuit (PC) of a module (10a or 10b) compares a sensing signal (SSE) for example, which is sent out from a sensing circuit (Se) and is proportional to the collector current of an IGBT element, with a reference voltage, and judges presence or absence of abnormality in the collector current. If abnormal, a shutdown signal (S.sub.SD) is sent out to a shutdown circuit (SD), and the IGBT element is cut off, and simultaneously an abnormality detection signal (S.sub.F01 or S.sub.F02) is sent out to the other module (10b or 10a). The diagnosis circuit (PC of the module (10b or 10a) receives the abnormality detection signal (S.sub.F01 or S.sub.F02), and sends out the shutdown signal (S.sub.SD) to the shutdown circuit (SD), thereby shutting down the IGBT element. Since the transmission timing of both shutdown signals (S.sub.SD) coincides, the both IGBT elements are cut off at the same time. Therefore, due to earlier shutdown of one IGBT element, concentration of load in the other delayed IGBT element may be avoided.
摘要翻译：半导体功率模块被配置为防止某个半导体功率开关元件中的负载集中。模块（10a或10b）的诊断电路（PC）比较例如从感测电路（Se）发送并与IGBT元件的集电极电流成比例的感测信号（SSE）与参考电压，判断集电极电流的有无异常。如果异常，则关闭信号（SSD）发送到关闭电路（SD），IGBT元件被切断，同时将异常检测信号（SF01或SF02）发送到另一个模块（10b或10a））。诊断电路（模块（10b或10a）的PC接收到异常检测信号（SF01或SF02），并向关闭电路（SD）发送关机信号（SSD），从而关闭IGBT元件，由于两个关断信号（SSD）的发送定时一致，两个IGBT元件同时被切断，因此由于一个IGBT元件的更早的停止，可以避免另一个延迟IGBT元件的负载集中。

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