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31. 发明授权

US06323831B1 Electron emitting device and switching circuit using the same 失效
标题翻译：电子发射器件和使用其的开关电路
公开(公告)号：US06323831B1
公开(公告)日：2001-11-27
申请号：US09153086
申请日：1998-09-15
申请人： Tomio Ono , Tadashi Sakai , Naoshi Sakuma , Kazuya Nakayama
发明人： Tomio Ono , Tadashi Sakai , Naoshi Sakuma , Kazuya Nakayama
IPC分类号： G09G322
CPC分类号： H01J3/022 , H01J7/44 , H01J19/78
摘要： An electron emitting comprising an emitter electrode for emitting electrons when applied with an electric field, a gate electrode for extracting the electrons emitted from the emitter electrode, when applied with a voltage from a signal source, the voltage being positive with respect to the emitter electrode, an anode electrode connected to a load, for collecting the electrons extracted by the gate electrode, and for passing an anode current, and a gate resistor connected between the signal source and the gate electrode, for reducing a gate current flowing in the gate electrode, without changing an anode current flowing in the anode, and for lowering a gate voltage by utilizing a voltage drop cause by the gate current.
摘要翻译：一种电子发射器，包括用于在施加电场时发射电子的发射极电极，用于从发射极发射的电子提取的栅电极，当施加来自信号源的电压时，该电压相对于发射电极为正连接到负载的阳极，用于收集由栅电极提取的电子和用于通过阳极电流，以及连接在信号源和栅电极之间的栅极电阻，用于减少在栅电极中流动的栅极电流，而不改变在阳极中流动的阳极电流，并且通过利用由栅极电流引起的电压降降低栅极电压。

32. 发明授权

US08710672B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08710672B2
公开(公告)日：2014-04-29
申请号：US13541954
申请日：2012-07-05
申请人： Masayuki Katagiri , Yuichi Yamazaki , Makoto Wada , Tadashi Sakai , Naoshi Sakuma , Mariko Suzuki
发明人： Masayuki Katagiri , Yuichi Yamazaki , Makoto Wada , Tadashi Sakai , Naoshi Sakuma , Mariko Suzuki
IPC分类号： H01L21/768
CPC分类号： H01L23/5226 , B82Y40/00 , H01L21/76876 , H01L21/76879 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device of an embodiment includes: a substrate; a first catalytic metal film on the substrate; graphene on the first catalytic metal film; an interlayer insulating film on the graphene; a contact hole penetrating through the interlayer insulating film; a conductive film at the bottom portion of the contact hole, the conductive film being electrically connected to the graphene; a second catalytic metal film on the conductive film, the second catalytic metal film being subjected to plasma processing with at least one kind of gas selected from hydrogen, nitrogen, ammonia, and rare gas; and carbon nanotubes on the second catalytic metal film.
摘要翻译：实施例的半导体器件包括：衬底; 在基板上的第一催化金属膜; 第一催化金属膜上的石墨烯; 石墨烯上的层间绝缘膜; 穿过层间绝缘膜的接触孔; 所述导电膜在所述接触孔的底部，所述导电膜与所述石墨烯电连接; 在所述导电膜上的第二催化金属膜，所述第二催化金属膜用选自氢，氮，氨和稀有气体中的至少一种气体进行等离子体处理; 和第二催化金属膜上的碳纳米管。

33. 发明授权

US08398927B2 Carbon nanotube manufacturing apparatus, carbon nanotube manufacturing method, and radical producing apparatus 有权
标题翻译：碳纳米管制造装置，碳纳米管制造方法和自由基生成装置
公开(公告)号：US08398927B2
公开(公告)日：2013-03-19
申请号：US12495004
申请日：2009-06-30
申请人： Yuichi Yamazaki , Tadashi Sakai , Naoshi Sakuma , Masayuki Katagiri , Mariko Suzuki
发明人： Yuichi Yamazaki , Tadashi Sakai , Naoshi Sakuma , Masayuki Katagiri , Mariko Suzuki
IPC分类号： B01J19/08
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/16
摘要： A carbon nanotube manufacturing apparatus includes a plasma generating unit that generates plasma including ions, radicals, and electrons, from gas; a carbon nanotube manufacturing unit that manufactures carbon nanotubes from the radicals; a shielding electrode unit that is provided between the plasma generating unit and the carbon nanotube manufacturing unit and prevents the ions and the electrons from entering the carbon nanotube manufacturing unit; and a bias applying unit that applies a voltage to the shielding electrode unit, wherein the shielding electrode unit includes at least two first shielding electrodes that are arranged one above another, each of the first shielding electrodes having at least one opening.
摘要翻译：碳纳米管制造装置包括：等离子体产生单元，其从气体产生包括离子，自由基和电子的等离子体; 由自由基制造碳纳米管的碳纳米管制造单元; 设置在等离子体产生单元和碳纳米管制造单元之间并防止离子和电子进入碳纳米管制造单元的屏蔽电极单元; 以及向所述屏蔽电极单元施加电压的偏压施加单元，其中所述屏蔽电极单元包括至少两个彼此排列的第一屏蔽电极，每个所述第一屏蔽电极具有至少一个开口。

34. 发明授权

US08878190B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08878190B2
公开(公告)日：2014-11-04
申请号：US13555430
申请日：2012-07-23
申请人： Mariko Suzuki , Tadashi Sakai , Naoshi Sakuma , Masayuki Katagiri , Yuichi Yamazaki
发明人： Mariko Suzuki , Tadashi Sakai , Naoshi Sakuma , Masayuki Katagiri , Yuichi Yamazaki
IPC分类号： H01L29/15 , H01L31/0312 , H01L29/66 , H01L29/872 , H01L21/02 , H01L29/861
CPC分类号： H01L21/02527 , H01L21/02376 , H01L21/02433 , H01L21/02576 , H01L29/66136 , H01L29/66143 , H01L29/8613 , H01L29/872
摘要： A semiconductor device according to the present embodiment includes a diamond substrate having a surface plane inclined from a (100) plane in a range of 10 degrees to 40 degrees in a direction of ±10 degrees, and an n-type diamond semiconductor layer containing phosphorus (P) and formed above the surface plane described above.
摘要翻译：根据本实施例的半导体器件包括具有从（100）面倾斜的表面平面的金刚石基板在<011±10度的方向上在10度至40度的范围内，以及n型金刚石半导体含有磷（P）的层并形成在上述表面上方。

35. 发明授权

US08609199B2 Carbon nanotube growing process, and carbon nanotube bundle formed substrate 有权
标题翻译：碳纳米管生长工艺和碳纳米管束形成的基板
公开(公告)号：US08609199B2
公开(公告)日：2013-12-17
申请号：US12689515
申请日：2010-01-19
申请人： Yuichi Yamazaki , Tadashi Sakai , Naoshi Sakuma , Masayuki Katagiri , Mariko Suzuki , Shintaro Sato
发明人： Yuichi Yamazaki , Tadashi Sakai , Naoshi Sakuma , Masayuki Katagiri , Mariko Suzuki , Shintaro Sato
IPC分类号： H05H1/00 , H05H1/20 , H05H1/22 , H05H1/24
CPC分类号： H01J37/32422 , B82Y30/00 , B82Y40/00 , C01B32/16 , C23C16/02 , C23C16/26 , H01J37/32357
摘要： In the growth of carbon nanotubes, the aggregation of catalytic fine particles therefor is a problem. In order to realize the growth of carbon nanotubes into a high density, the carbon nanotube growing process includes a first plasma treatment step of treating a surface having catalytic fine particles with a plasma species generated from a gas which contains at least hydrogen or a rare gas without carbon element, a second plasma treatment step of forming a carbon layer on the surface of the catalytic fine particles by a plasma generated from a gas which contains at least a hydrocarbon after the first plasma treatment step, and a carbon nanotube growing step of growing carbon nanotubes by use of a plasma generated from a gas which contains at least a hydrocarbon after the second plasma treatment step.
摘要翻译：在碳纳米管的生长中，催化微粒的聚集是一个问题。为了实现高密度碳纳米管的生长，碳纳米管生长工艺包括：第一等离子体处理步骤，用从至少包含氢气或稀有气体的气体产生的等离子体物质处理具有催化微粒子的表面没有碳元素的第二等离子体处理步骤，通过在第一等离子体处理步骤之后由至少含有烃的气体产生的等离子体在催化微粒表面上形成碳层的第二等离子体处理步骤和生长使用在第二等离子体处理步骤之后由至少含有烃的气体产生的等离子体生成碳纳米管。

36. 发明授权

US08525399B2 Electron emission element including diamond doped with phosphorus 失效
标题翻译：电子发射元件包括掺杂磷的金刚石
公开(公告)号：US08525399B2
公开(公告)日：2013-09-03
申请号：US12888650
申请日：2010-09-23
申请人： Mariko Suzuki , Tadashi Sakai , Naoshi Sakuma , Masayuki Katagiri , Yuichi Yamazaki
发明人： Mariko Suzuki , Tadashi Sakai , Naoshi Sakuma , Masayuki Katagiri , Yuichi Yamazaki
IPC分类号： H01J63/04
CPC分类号： H01J1/304 , H01J29/04 , H01J31/127 , H01J2329/0447
摘要： According to the embodiment, an electron emission element includes a conductive substrate, a first diamond layer of a first conductivity type formed on the conductive substrate, and a second diamond layer of the first conductivity type formed on the first diamond layer. Thereby, it becomes possible to provide the electron emission element having a high electron emission amount and a high current density even in a low electric field at low temperature and the electron emission apparatus using this electron emission element.
摘要翻译：根据实施例，电子发射元件包括导电衬底，形成在导电衬底上的第一导电类型的第一金刚石层和形成在第一金刚石层上的第一导电类型的第二金刚石层。由此，即使在低温下的低电场和使用该电子发射元件的电子发射装置，也可以提供具有高电子发射量和高电流密度的电子发射元件。

37. 发明申请

US20130075929A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130075929A1
公开(公告)日：2013-03-28
申请号：US13541954
申请日：2012-07-05
申请人： Masayuki Katagiri , Yuichi Yamazaki , Makoto Wada , Tadashi Sakai , Naoshi Sakuma , Mariko Suzuki
发明人： Masayuki Katagiri , Yuichi Yamazaki , Makoto Wada , Tadashi Sakai , Naoshi Sakuma , Mariko Suzuki
IPC分类号： H01L21/768 , H01L23/522 , B82Y99/00 , B82Y40/00
CPC分类号： H01L23/5226 , B82Y40/00 , H01L21/76876 , H01L21/76879 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device of an embodiment includes: a substrate; a first catalytic metal film on the substrate; graphene on the first catalytic metal film; an interlayer insulating film on the graphene; a contact hole penetrating through the interlayer insulating film; a conductive film at the bottom portion of the contact hole, the conductive film being electrically connected to the graphene; a second catalytic metal film on the conductive film, the second catalytic metal film being subjected to plasma processing with at least one kind of gas selected from hydrogen, nitrogen, ammonia, and rare gas; and carbon nanotubes on the second catalytic metal film.
摘要翻译：实施例的半导体器件包括：衬底; 在基板上的第一催化金属膜; 第一催化金属膜上的石墨烯; 石墨烯上的层间绝缘膜; 穿过层间绝缘膜的接触孔; 所述导电膜在所述接触孔的底部，所述导电膜与所述石墨烯电连接; 在所述导电膜上的第二催化金属膜，所述第二催化金属膜用选自氢，氮，氨和稀有气体中的至少一种气体进行等离子体处理; 和第二催化金属膜上的碳纳米管。

38. 发明申请

US20100072054A1 CARBON NANOTUBE MANUFACTURING APPARATUS, CARBON NANOTUBE MANUFACTURING METHOD, AND RADICAL PRODUCING APPARATUS 有权
标题翻译：碳纳米管制造设备，碳纳米管制造方法和放射生产设备
公开(公告)号：US20100072054A1
公开(公告)日：2010-03-25
申请号：US12495004
申请日：2009-06-30
申请人： Yuichi Yamazaki , Tadashi Sakai , Naoshi Sakuma , Masayuki Katagiri , Mariko Suzuki
发明人： Yuichi Yamazaki , Tadashi Sakai , Naoshi Sakuma , Masayuki Katagiri , Mariko Suzuki
IPC分类号： C01B31/02 , B01J19/08
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/16
摘要： A carbon nanotube manufacturing apparatus includes a plasma generating unit that generates plasma including ions, radicals, and electrons, from gas; a carbon nanotube manufacturing unit that manufactures carbon nanotubes from the radicals; a shielding electrode unit that is provided between the plasma generating unit and the carbon nanotube manufacturing unit and prevents the ions and the electrons from entering the carbon nanotube manufacturing unit; and a bias applying unit that applies a voltage to the shielding electrode unit, wherein the shielding electrode unit includes at least two first shielding electrodes that are arranged one above another, each of the first shielding electrodes having at least one opening.
摘要翻译：碳纳米管制造装置包括：等离子体产生单元，其从气体产生包括离子，自由基和电子的等离子体; 由自由基制造碳纳米管的碳纳米管制造单元; 设置在等离子体产生单元和碳纳米管制造单元之间并防止离子和电子进入碳纳米管制造单元的屏蔽电极单元; 以及向所述屏蔽电极单元施加电压的偏压施加单元，其中所述屏蔽电极单元包括至少两个彼此排列的第一屏蔽电极，每个所述第一屏蔽电极具有至少一个开口。

39. 发明申请

US20120052680A1 MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE 有权
标题翻译：半导体衬底的制造方法
公开(公告)号：US20120052680A1
公开(公告)日：2012-03-01
申请号：US13041543
申请日：2011-03-07
申请人： Naoshi SAKUMA , Tadashi Sakai , Yuichi Yamazaki , Masayuki Katagiri , Mariko Suzuki , Makoto Wada
发明人： Naoshi SAKUMA , Tadashi Sakai , Yuichi Yamazaki , Masayuki Katagiri , Mariko Suzuki , Makoto Wada
IPC分类号： H01L21/28
CPC分类号： H01L21/76879 , H01L21/28556 , H01L21/76876 , H01L21/76883 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： a manufacturing method of a semiconductor substrate includes the following steps: forming a first wiring layer on a substrate; forming an interlayer insulating film having a via hole on the wiring layer; forming carbon nanotubes in the via hole; performing a fluorination treatment entirely to the substrate; forming an embedded film in the via hole having the carbon nanotubes therein; and polishing the substrate to entirely flatten the substrate.
摘要翻译：半导体衬底的制造方法包括以下步骤：在衬底上形成第一布线层; 在所述布线层上形成具有通孔的层间绝缘膜; 在通孔中形成碳纳米管; 完全对基材进行氟化处理; 在其中具有碳纳米管的通孔中形成嵌入膜; 并抛光衬底以使衬底完全平坦化。

40. 发明申请

US20110147177A1 STRUCTURE, ELECTRONIC DEVICE, AND METHOD FOR FABRICATING A STRUCTURE 有权
标题翻译：结构，电子设备和制造结构的方法
公开(公告)号：US20110147177A1
公开(公告)日：2011-06-23
申请号：US13060994
申请日：2008-08-25
申请人： Tadashi Sakai , Naoshi Sakuma , Masayuki Katagiri , Mariko Suzuki
发明人： Tadashi Sakai , Naoshi Sakuma , Masayuki Katagiri , Mariko Suzuki
IPC分类号： H01H59/00 , B05D5/12 , B05D1/16 , B32B15/04 , B82Y99/00
CPC分类号： H01H1/0036 , B81B2207/07 , B81C1/00166 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/16 , D01F9/127 , D01F9/133 , H01H1/027 , H01H2001/0052 , H01H2300/036 , H01L24/11 , H01L24/13 , H01L24/742 , H01L24/81 , H01L2224/0401 , H01L2224/05026 , H01L2224/05562 , H01L2224/05571 , H01L2224/11452 , H01L2224/1148 , H01L2224/1182 , H01L2224/11826 , H01L2224/13022 , H01L2224/13193 , H01L2224/13564 , H01L2224/136 , H01L2224/16237 , H01L2224/742 , H01L2224/8114 , H01L2224/81191 , H01L2224/81193 , H01L2224/81486 , H01L2224/81493 , H01L2924/0002 , H01L2924/01004 , H01L2924/01019 , H01L2924/01057 , H01L2924/04941 , H01L2924/1461 , H01L2924/351 , Y10T428/23943 , Y10T428/31678 , H01L2224/13693 , H01L2924/00012 , H01L2924/00014 , H01L2924/00 , H01L2224/05552
摘要： A structure includes a conductive film (12) provided in an underlying layer (10); and a carbon nanotube bundle (20) including a plurality of carbon nanotubes each having one end connected to the conductive film (12), wherein, at other end side of the carbon nanotube bundle (20), at least carbon nanotubes allocated at outer side of the carbon nanotube bundle (20) extend with convex curvatures toward the outside of the carbon nanotube bundle (20), and the convex curvatures of the carbon nanotubes allocated at the outer side of the carbon nanotube bundle are larger than those of inner side of the carbon nanotube bundle (20), and diameters of the carbon nanotube bundle (20) decrease toward the other end of the carbon nanotube bundle (20).
摘要翻译：一种结构包括设置在下层（10）中的导电膜（12）。以及包含多个碳纳米管的碳纳米管束（20），所述多个碳纳米管的一端与所述导电膜（12）连接，其中，在所述碳纳米管束（20）的另一端侧，至少分配有碳纳米管的碳纳米管束（20）的外侧的凸曲率朝向碳纳米管束（20）的外侧以凸曲率延伸，并且分配在碳纳米管束外侧的碳纳米管的凸曲率大于碳纳米管束（20）和碳纳米管束（20）的直径朝向碳纳米管束（20）的另一端减小。

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