会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 33. 发明授权
    • Color solid-state image capturing apparatus and electronic information device
    • 彩色固体摄像装置和电子信息装置
    • US08134633B2
    • 2012-03-13
    • US12232953
    • 2008-09-26
    • Takashi Watanabe
    • Takashi Watanabe
    • G02B13/16H04N5/225
    • H04N9/045G02B5/201H01L27/14605H01L27/14621H01L27/14627H04N5/2254H04N5/23212H04N5/357
    • A color solid-state image capturing apparatus is provided, where a plurality of light receiving sections are arranged on a light receiving surface of an image capturing area, a plurality of color filters are positioned in a constant period above the plurality of light receiving sections, and a plurality of microlenses for focusing light on the plurality of respective light receiving sections are positioned on the plurality of color filters, and a plurality of color signals are output in accordance with the plurality of color filters, where the constant period of the plurality of color filters is defined as a unit, and the size of the plurality of microlenses is variable for each light receiving section so that the ratio of the plurality of color signals is constant in the unit.
    • 提供了一种彩色固态摄像装置,其中多个光接收部分布置在图像捕获区域的光接收表面上,多个滤色器位于多个光接收部分上方的恒定周期中, 并且用于将光聚焦在多个各个光接收部分上的多个微透镜位于多个滤色器上,并且根据多个滤色器输出多个彩色信号,其中多个滤色器的恒定周期 将滤色器定义为单位,并且对于每个光接收部分,多个微透镜的尺寸是可变的,使得多个颜色信号的比率在该单元中是恒定的。
    • 37. 发明授权
    • Lens apparatus and image projection apparatus
    • 透镜装置和图像投影装置
    • US07948688B2
    • 2011-05-24
    • US12474701
    • 2009-05-29
    • Takashi Watanabe
    • Takashi Watanabe
    • G02B15/14
    • G02B7/102G02B13/16G02B15/177
    • The lens apparatus which includes a lens system, a cam barrel including a cam surface, and a moving barrel provided with a cam follower in contact with the cam surface and configured to be moved in a direction of an optical axis of the lens system by rotation of the cam barrel around the optical axis. The cam surface is parallel to a direction orthogonal to the optical axis. The cam barrel includes a tapered surface inclining with respect to the direction orthogonal to the optical axis. The moving barrel is provided with a tapered follower in contact with the tapered surface and a pressing mechanism configured to bias the tapered follower in the direction orthogonal to the optical axis so as to press the tapered follower against the tapered surface to thereby press the cam follower against the cam surface in the direction of the optical axis.
    • 该透镜装置包括透镜系统,包括凸轮表面的凸轮筒和设置有与凸轮表面接触的凸轮从动件的移动筒,并且构造成通过旋转沿透镜系统的光轴的方向移动 凸轮筒周围的光轴。 凸轮表面平行于与光轴正交的方向。 凸轮筒包括相对于与光轴正交的方向倾斜的锥形表面。 移动筒体设置有与锥形表面接触的锥形从动件和压力机构,其构造成在与光轴正交的方向上偏压锥形从动件,以将锥形随动件压靠在锥形表面上,从而按压凸轮从动件 在光轴的方向上抵靠凸轮表面。
    • 40. 发明授权
    • Semiconductor range-finding element and solid-state imaging device
    • 半导体测距元件和固态成像装置
    • US07843029B2
    • 2010-11-30
    • US12295443
    • 2007-03-30
    • Shoji KawahitoTakashi Watanabe
    • Shoji KawahitoTakashi Watanabe
    • H01L31/10H01L27/148
    • H01L31/02024G01C3/02G01C3/08G01S7/4816G01S17/89H01L27/14603H01L27/14609H01L27/14643H01L27/14689H04N5/3575
    • A semiconductor range-finding element and a solid-state imaging device, which can provide a smaller dark current and a removal of reset noise. With n-type buried charge-generation region, buried charge-transfer regions, buried charge read-out regions buried in a surface of p-type semiconductor layer, an insulating film covering these regions, transfer gate electrodes arranged on the insulating film for transferring the signal charges to the buried charge-transfer regions, read-out gate electrodes arranged on the insulating film for transferring the signal charges to the buried charge read-out regions, after receiving a light pulse by the buried charge-generation region, in the semiconductor layer just under the buried charge-generation region, an optical signal is converted into signal charges, and a distance from a target sample is determined by a distribution ratio of the signal charges accumulated in the buried charge-transfer regions.
    • 半导体测距元件和固态成像器件,其可以提供更小的暗电流和去除复位噪声。 对于n型掩埋电荷产生区域,掩埋电荷转移区域,埋藏在p型半导体层表面的掩埋电荷读出区域,覆盖这些区域的绝缘膜,设置在绝缘膜上的传输栅电极用于传输 信号对掩埋的电荷转移区域充电,在接收到埋入电荷产生区域的光脉冲之后,布置在绝缘膜上的用于将信号电荷转移到掩埋电荷读出区域的读出栅电极 半导体层正好在掩埋电荷产生区域之下,光信号被转换成信号电荷,并且通过在掩埋电荷转移区域中累积的信号电荷的分配比来确定与目标样品的距离。