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    • 34. 发明授权
    • Organic luminescence transistor device and manufacturing method thereof
    • 有机发光晶体管器件及其制造方法
    • US08158970B2
    • 2012-04-17
    • US12085682
    • 2006-12-01
    • Katsunari ObataShinichi HandaTakuya HataKenji NakamuraAtsushi YoshizawaHiroyuki Endo
    • Katsunari ObataShinichi HandaTakuya HataKenji NakamuraAtsushi YoshizawaHiroyuki Endo
    • H01L29/08
    • H01L51/5296H01L51/0541H01L51/0545H01L51/5096H01L51/5203H01L2251/558H05B33/10H05B33/22H05B33/26
    • The invention is an organic luminescence transistor device including: a substrate; an assistance electrode layer provided on a side of an upper surface of the substrate; an insulation film provided on a side of an upper surface of the assistance electrode layer; a first electrode provided locally on a side of an upper surface of the insulation film, the first electrode covering an area of a predetermined size; an electric-charge-injection inhibiting layer provided on an upper surface of the first electrode, the electric-charge-injection inhibiting layer having a shape larger than that of the first electrode in a plan view; an electric-charge injection layer provided on the side of an upper surface of the insulation film at an area not provided with the first electrode or the electric-charge-injection inhibiting layer and on an upper surface of the electric-charge-injection inhibiting layer; a luminescent layer provided on an upper surface of the electric-charge injection layer; and a second electrode layer provided on a side of an upper surface of the luminescent layer.
    • 本发明是一种有机发光晶体管器件,包括:衬底; 辅助电极层,设置在所述基板的上表面的一侧; 设置在所述辅助电极层的上表面侧的绝缘膜; 局部设置在所述绝缘膜的上表面侧的第一电极,所述第一电极覆盖预定尺寸的区域; 设置在所述第一电极的上表面上的电荷注入抑制层,所述电荷注入抑制层在俯视图中具有大于所述第一电极的形状的形状; 设置在绝缘膜的上表面侧的未设置有第一电极或电荷注入抑制层的区域以及电荷注入抑制层的上表面的电荷注入层 ; 设置在电荷注入层的上表面上的发光层; 以及设置在发光层的上表面一侧的第二电极层。