专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US07807490B2 Manufacturing method of nitride semiconductor device and nitride semiconductor device 有权
标题翻译：氮化物半导体器件和氮化物半导体器件的制造方法
公开(公告)号：US07807490B2
公开(公告)日：2010-10-05
申请号：US12216928
申请日：2008-07-14
申请人： Takashi Kano , Tsutomu Yamaguchi , Hiroaki Izu , Masayuki Hata , Yasuhiko Nomura
发明人： Takashi Kano , Tsutomu Yamaguchi , Hiroaki Izu , Masayuki Hata , Yasuhiko Nomura
IPC分类号： H01L21/00
CPC分类号： H01L21/0243 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L33/0075 , H01L33/025
摘要： Provided is a manufacturing method of a nitride semiconductor device having a nitride semiconductor substrate (e.g. GaN substrate) in which dislocation concentrated regions align in stripe formation, the dislocation concentrated regions extending from a front surface to a back surface of the substrate, the manufacturing method being for stacking each of a plurality of nitride semiconductor layers on the front surface of the substrate in a constant film thickness. Grooves are formed on the nitride semiconductor substrate in the immediate areas of dislocation concentrated regions. Each of the nitride semiconductor layers is formed as a crystal growth layer on the main surface of the nitride semiconductor substrate to which the grooves have been formed.
摘要翻译：提供了一种氮化物半导体器件的制造方法，其具有氮化物半导体衬底（例如GaN衬底），其中位错集中区域在条带形成中对准，位错集中区域从衬底的前表面延伸到后表面，制造方法用于以恒定的膜厚堆叠在基板的前表面上的多个氮化物半导体层中的每一个。在位错集中区域的紧邻区域上的氮化物半导体衬底上形成沟槽。每个氮化物半导体层在形成有凹槽的氮化物半导体衬底的主表面上形成为晶体生长层。

32. 发明申请

US20090262772A1 SEMICONDUCTOR LASER DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20090262772A1
公开(公告)日：2009-10-22
申请号：US12492517
申请日：2009-06-26
申请人： Tsutomu Yamaguchi , Masayuki Hata , Takashi Kano , Masayuki Shono , Hiroki Ohbo , Yasuhiko Nomura , Hiroaki Izu
发明人： Tsutomu Yamaguchi , Masayuki Hata , Takashi Kano , Masayuki Shono , Hiroki Ohbo , Yasuhiko Nomura , Hiroaki Izu
IPC分类号： H01S5/00 , H01L33/00
CPC分类号： H01S5/30 , H01L24/05 , H01L2224/04042 , H01L2224/48463 , H01L2224/73265 , H01L2924/00
摘要： A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having a principal surface substantially inclined with respect to the principal surface of the semiconductor substrate and including an emission layer.
摘要翻译：获得能够降低阈值电流并提高发光效率的半导体激光器件及其制造方法。该半导体激光器件包括具有主表面和半导体元件层的半导体衬底，该半导体衬底形成在半导体衬底的主表面上，其主表面相对于半导体衬底的主表面大致倾斜并且包括发射层。

33. 发明授权

US07453102B2 Nitride-based semiconductor laser device 失效
标题翻译：基于氮化物的半导体激光器件
公开(公告)号：US07453102B2
公开(公告)日：2008-11-18
申请号：US11147334
申请日：2005-06-08
申请人： Yasuhiko Nomura , Takashi Kano
发明人： Yasuhiko Nomura , Takashi Kano
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： B82Y20/00 , H01S5/2009 , H01S5/34333 , H01S2301/173 , H01S2301/18
摘要： A nitride-based semiconductor laser device capable of elongating the life thereof is obtained. This nitride-based semiconductor laser device comprises a first cladding layer consisting of a first conductivity type nitride-based semiconductor, an emission layer, formed on the first cladding layer, consisting of a nitride-based semiconductor and a second cladding layer, formed on the emission layer, consisting of a second conductivity type nitride-based semiconductor, while the emission layer includes an active layer emitting light, a light guiding layer for confining light and a carrier blocking layer, arranged between the active layer and the light guiding layer, having a larger band gap than the light guiding layer.
摘要翻译：获得能够延长寿命的氮化物系半导体激光装置。该氮化物系半导体激光装置包括：由第一导电型氮化物系半导体构成的第一包层，形成在第一包层上的由氮化物系半导体和第二包层构成的发光层，发射层，由第二导电型氮化物基半导体组成，而发射层包括发射光的有源层，用于限制光的导光层和布置在有源层和导光层之间的载流子阻挡层，具有比导光层更大的带隙。

34. 发明申请

US20080280445A1 Manufacturing method of nitride semiconductor device and nitride semiconductor device 有权
公开(公告)号：US20080280445A1
公开(公告)日：2008-11-13
申请号：US12216928
申请日：2008-07-14
申请人： Takashi Kano , Tsutomu Yamaguchi , Hiroaki Izu , Masayuki Hata , Yasuhiko Nomura
发明人： Takashi Kano , Tsutomu Yamaguchi , Hiroaki Izu , Masayuki Hata , Yasuhiko Nomura
IPC分类号： H01L21/306
CPC分类号： H01L21/0243 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L33/0075 , H01L33/025
摘要： Provided is a manufacturing method of a nitride semiconductor device having a nitride semiconductor substrate (e.g. GaN substrate) in which dislocation concentrated regions align in stripe formation, the dislocation concentrated regions extending from a front surface to a back surface of the substrate, the manufacturing method being for stacking each of a plurality of nitride semiconductor layers on the front surface of the substrate in a constant film thickness. Grooves are formed on the nitride semiconductor substrate in the immediate areas of dislocation concentrated regions. Each of the nitride semiconductor layers is formed as a crystal growth layer on the main surface of the nitride semiconductor substrate to which the grooves have been formed.

35. 发明授权

US07405096B2 Manufacturing method of nitride semiconductor device and nitride semiconductor device 有权
标题翻译：氮化物半导体器件和氮化物半导体器件的制造方法
公开(公告)号：US07405096B2
公开(公告)日：2008-07-29
申请号：US11080398
申请日：2005-03-16
申请人： Takashi Kano , Tsutomu Yamaguchi , Hiroaki Izu , Masayuki Hata , Yasuhiko Nomura
发明人： Takashi Kano , Tsutomu Yamaguchi , Hiroaki Izu , Masayuki Hata , Yasuhiko Nomura
IPC分类号： H01L21/00 , H01L29/20
CPC分类号： H01L21/0243 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L33/0075 , H01L33/025
摘要： Provided is a manufacturing method of a nitride semiconductor device having a nitride semiconductor substrate (e.g. GaN substrate) in which dislocation concentrated regions align in stripe formation, the dislocation concentrated regions extending from a front surface to a back surface of the substrate, the manufacturing method being for stacking each of a plurality of nitride semiconductor layers on the front surface of the substrate in a constant film thickness. Grooves are formed on the nitride semiconductor substrate in the immediate areas of dislocation concentrated regions. Each of the nitride semiconductor layers is formed as a crystal growth layer on the main surface of the nitride semiconductor substrate to which the grooves have been formed.
摘要翻译：提供了一种氮化物半导体器件的制造方法，其具有氮化物半导体衬底（例如GaN衬底），其中位错集中区域在条带形成中对准，位错集中区域从衬底的前表面延伸到后表面，制造方法用于以恒定的膜厚堆叠在基板的前表面上的多个氮化物半导体层中的每一个。在位错集中区域的紧邻区域上的氮化物半导体衬底上形成沟槽。每个氮化物半导体层在形成有凹槽的氮化物半导体衬底的主表面上形成为晶体生长层。

36. 发明授权

US07280949B2 Aided design apparatus, aided design method, and recording medium for recording program for carrying out the method 有权
标题翻译：辅助设计装置，辅助设计方法和用于执行该方法的记录程序的记录介质
公开(公告)号：US07280949B2
公开(公告)日：2007-10-09
申请号：US10720836
申请日：2003-11-24
申请人： Takashi Kano , Kazuhiko Ishiwata , Kazuki Nakanishi , Kazuhito Watanabe , Toshihiko Horikoshi
发明人： Takashi Kano , Kazuhiko Ishiwata , Kazuki Nakanishi , Kazuhito Watanabe , Toshihiko Horikoshi
IPC分类号： G06G7/48 , G06F17/50 , G06F19/00
CPC分类号： G06F17/50 , G06F2217/42
摘要： The invention provides an aided design apparatus including a output element for outputting data of an attribute name associated with an attribute group of a part used for transporting a sheet along with three-dimensional shape data of the part. The invention further provides a related aided design method and a recording medium for recording a program for carrying out the method, wherein the data of parts used in a simulation for paper transportation can be easily exchanged.
摘要翻译：本发明提供了一种辅助设计装置，包括：输出元件，用于输出与用于传送片材的部分的属性组相关联的属性名称的数据以及该部分的三维形状数据。本发明还提供了一种相关的辅助设计方法和用于记录用于执行该方法的程序的记录介质，其中用于纸张传送的模拟中使用的部件的数据可以容易地更换。

37. 发明申请

US20070221932A1 Method of fabricating nitride-based semiconductor light-emitting device and nitride-based semiconductor light-emitting device 审中-公开
标题翻译：制造氮化物系半导体发光元件和氮化物系半导体发光元件的方法
公开(公告)号：US20070221932A1
公开(公告)日：2007-09-27
申请号：US11523531
申请日：2006-09-20
申请人： Takashi Kano , Masayuki Hata , Yasuhiko Nomura
发明人： Takashi Kano , Masayuki Hata , Yasuhiko Nomura
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/0075 , H01S5/0202 , H01S5/0207 , H01S5/0425 , H01S5/3063 , H01S2304/04 , H01S2304/12
摘要： A method of fabricating a nitride-based semiconductor light-emitting device capable of suppressing reduction of characteristics and a yield is obtained. This method of fabricating a nitride-based semiconductor light-emitting device comprises steps of forming a groove portion on a nitride-based semiconductor substrate by selectively removing a prescribed region of a second region of the nitride-based semiconductor substrate other than a first region corresponding to a light-emitting portion of a nitride-based semiconductor layer up to a prescribed depth and forming the nitride-based semiconductor layer having a different composition from the nitride-based semiconductor substrate on the first region and the groove portion of the nitride-based semiconductor substrate.
摘要翻译：获得了能够抑制特性降低和产率降低的氮化物系半导体发光元件的制造方法。制造氮化物系半导体发光元件的方法包括以下步骤：通过选择性地除去氮化物系半导体衬底的除第一区域之外的第二区域的规定区域，在氮化物系半导体衬底上形成沟槽部到达氮化物系半导体层的发光部分，直到规定的深度，并且在氮化物系半导体衬底的第一区域和氮化物基半导体衬底的沟槽部分上形成与氮化物基半导体衬底不同的组成的氮化物基半导体层半导体衬底。

38. 发明申请

US20070200177A1 Semiconductor laser device and semiconductor laser device manufacturing method 审中-公开
标题翻译：半导体激光器件和半导体激光器件制造方法
公开(公告)号：US20070200177A1
公开(公告)日：2007-08-30
申请号：US11711051
申请日：2007-02-27
申请人： Masayuki Hata , Takashi Kano
发明人： Masayuki Hata , Takashi Kano
IPC分类号： H01L27/12
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/22
摘要： A semiconductor laser device comprising: an active layer, a semiconductor layer formed on the active layer and having a wurtzite structure, wherein a principal surface of the active layer is substantially perpendicular to a (0001) surface of the semiconductor layer, a current path portion in the semiconductor layer extends along a crystal orientation substantially parallel to the (0001) surface of the semiconductor layer, and an inner angle of the principal surface to a first side surface is different from an inner angle of the principal surface to a second side surface, the first side surface is a side surface of the current path portion and the second side surface is opposite to the first side surface.
摘要翻译：一种半导体激光器件，包括：有源层，形成在有源层上并具有纤锌矿结构的半导体层，其中有源层的主表面基本上垂直于半导体层的（0001）表面，电流通路部分在半导体层中沿着与半导体层的（0001）表面基本平行的晶体取向延伸，并且主表面与第一侧表面的内角不同于主表面到第二侧表面的内角所述第一侧面是所述电流路径部的侧面，所述第二侧面与所述第一侧面相反。

39. 发明申请

US20060130935A1 Carburized component and method of manufacturing the same 审中-公开
标题翻译：渗碳部件及其制造方法
公开(公告)号：US20060130935A1
公开(公告)日：2006-06-22
申请号：US11296566
申请日：2005-12-08
申请人： Atsushi Hattori , Takashi Kano , Tomoko Serikawa , Koki Mizuno
发明人： Atsushi Hattori , Takashi Kano , Tomoko Serikawa , Koki Mizuno
IPC分类号： C23C8/22
CPC分类号： C23C8/80 , C23C8/22
摘要： This invention aims to provide a carburized component realizing a larger strength for power transmission components such as gears, and a method of manufacturing the same. The carburized component of this invention, aimed at realizing the object, consists essentially of, in % by mass and both ends inclusive, C: 0.1-0.30%, Si: 0.80-1.50%, Mn: 0.30-1.20%, Cr: 2.0-5.5%, and the balance of Fe and inevitable impurities; has a mean C concentration over the range from the surface of the steel to a depth of 0.2 mm after vacuum carburization of 1.2% or more and 3.0% or less, and has a ratio of a carbide area over the range from the surface to a depth of 50 μm of 15% or more and 60% or less, has the carbide precipitated in a finely dispersed manner so that the carbide having a grain size of 10 μm or less accounts for 90% or more of the entire portion, and has a depth of a grain boundary oxide layer below the surface of 1 μm or less.
摘要翻译：本发明的目的在于提供一种对齿轮等动力传递部件实现较大强度的渗碳部件及其制造方法。旨在实现该目的的本发明的渗碳组分基本上由质量％和两端包括C：0.1-0.30％，Si：0.80-1.50％，Mn：0.30-1.20％，Cr：2.0 -5.5％，余量为Fe和不可避免的杂质; 在真空渗碳后，从钢表面到深度0.2mm的范围内的平均C浓度为1.2％以上且3.0％以下，并且具有从表面到a的范围内的碳化物面积的比例深度50μm，15％以上且60％以下的碳化物，以微细分散的方式析出碳化物，使得粒径为10μm以下的碳化物占全部的90％以上，具有在1μm以下的表面下方的晶界氧化物层的深度。

40. 发明授权

US06872967B2 Nitride-based semiconductor device and manufacturing method thereof 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US06872967B2
公开(公告)日：2005-03-29
申请号：US10411286
申请日：2003-04-11
申请人： Takashi Kano , Hiroki Ohbo
发明人： Takashi Kano , Hiroki Ohbo
IPC分类号： H01L21/20 , H01L21/205 , H01L33/00 , H01L33/06 , H01L33/12 , H01L33/32 , H01S5/02 , H01S5/32 , H01S5/323 , H01S5/343 , H01L29/06 , H01L21/00
CPC分类号： H01S5/32341 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L33/0066 , H01S5/0213 , H01S5/2009 , H01S5/3201 , H01S5/3216 , H01S2301/173 , H01S2304/04
摘要： In the manufacture of a semiconductor laser device, sequentially grown on a sapphire substrate in the following order are a buffer layer, a first undoped GaN layer, a first super lattice defect reducing layer, a second undoped GaN layer, a second super lattice defect reducing layer, a third undoped GaN layer, a third super lattice defect reducing layer and a fourth undoped GaN layer. A device structure is then formed thereon. The first to third super lattice defect reducing layers each include five pairs of InGaN and AlGaN films alternately placed on one another in this order.
摘要翻译：在半导体激光器件的制造中，按顺序生长在蓝宝石衬底上的是缓冲层，第一未掺杂GaN层，第一超晶格缺陷减少层，第二未掺杂GaN层，第二超晶格缺陷减少第三未掺杂GaN层，第三超晶格缺陷减少层和第四未掺杂GaN层。然后在其上形成器件结构。第一至第三超晶格缺陷还原层各自包括依次交替放置的五对InGaN和AlGaN膜。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式