专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US08431927B2 Thin film transistor, method of manufacturing the same, and organic electroluminescent device including thin film transistor 有权
标题翻译：薄膜晶体管及其制造方法以及包括薄膜晶体管的有机电致发光器件
公开(公告)号：US08431927B2
公开(公告)日：2013-04-30
申请号：US12873206
申请日：2010-08-31
申请人： Kwang-Suk Kim , Jin-Seong Park
发明人： Kwang-Suk Kim , Jin-Seong Park
IPC分类号： H01L29/12
CPC分类号： H01L29/7869 , H01L27/3262
摘要： A thin film transistor including: a substrate; a gate electrode formed on the substrate; a gate insulating layer formed on the gate electrode and exposed portions of the substrate; an oxide semiconductor layer formed on the gate insulating layer to correspond to the gate electrode, and comprising an HfInZnO-based oxide semiconductor, wherein the concentration of Hf is from about 9 to about 15 at % based on 100 at % of the total concentration of Hf, In, and Zn; and source and drain regions respectively formed to extend on both sides of the oxide semiconductor layer and the gate insulating layer.
摘要翻译： 1.一种薄膜晶体管，包括：基板; 形成在所述基板上的栅电极; 形成在所述栅电极上的栅极绝缘层和所述基板的露出部分; 形成在所述栅极绝缘层上以对应于所述栅极的氧化物半导体层，并且包括HfInZnO基氧化物半导体，其中Hf的浓度基于总浓度的100at％为约9至约15at％ Hf，In和Zn; 并且分别形成为在氧化物半导体层和栅极绝缘层的两侧上延伸的源极和漏极区域。

32. 发明授权

US08383932B2 Compound for organic photoelectric device and organic photoelectric device including the same 有权
标题翻译：有机光电装置用复合物及其有机光电装置
公开(公告)号：US08383932B2
公开(公告)日：2013-02-26
申请号：US12662450
申请日：2010-04-19
申请人： Ho-Kuk Jung , Myeong-Soon Kang , Jin-Seong Park , Nam-Soo Kim , Kyu-Yeol In , Eiu-Su Kang , Mi-Young Chae
发明人： Ho-Kuk Jung , Myeong-Soon Kang , Jin-Seong Park , Nam-Soo Kim , Kyu-Yeol In , Eiu-Su Kang , Mi-Young Chae
IPC分类号： H01L31/00
CPC分类号： C09K11/06 , C07D263/57 , C07D401/10 , C07D413/10 , C07D413/14 , C07D417/10 , C07D417/14 , C09B1/00 , C09B3/14 , C09B15/00 , C09B17/00 , C09B57/00 , C09B57/001 , C09K2211/1029 , C09K2211/1033 , C09K2211/1037 , C09K2211/1044 , C09K2211/1048 , C09K2211/1059 , C09K2211/1096 , H01L51/0067 , H01L51/0069 , H01L51/0071 , H01L51/0072 , H01L51/5012 , H01L51/5048 , H01L51/5052 , H05B33/14 , H05B33/20 , H05B33/22
摘要： A compound for an organic photoelectric device, represented by the following Chemical Formula 1:
摘要翻译：用于有机光电器件的化合物，由以下化学式1表示：

33. 发明授权

US08772632B2 Compound for organic photoelectric device, organic photoelectric device including the same, and display device including the same 有权
标题翻译：有机光电装置用复合物，包含该有机光电装置的有机光电装置及包括其的显示装置
公开(公告)号：US08772632B2
公开(公告)日：2014-07-08
申请号：US13915802
申请日：2013-06-12
申请人： Kyu-Yeol In , Myeong-Soon Kang , Ho-Kuk Jung , Nam-Soo Kim , Eui-Su Kang , Mi-Young Chae , Jin-Seong Park
发明人： Kyu-Yeol In , Myeong-Soon Kang , Ho-Kuk Jung , Nam-Soo Kim , Eui-Su Kang , Mi-Young Chae , Jin-Seong Park
IPC分类号： H01L31/00
CPC分类号： H01L51/0054 , C07D403/10 , C07D413/10 , C07D417/04 , C07D417/10 , C09B1/00 , C09B57/00 , C09B57/001 , C09K11/06 , C09K2211/1007 , C09K2211/1011 , C09K2211/1029 , C09K2211/1033 , C09K2211/1037 , C09K2211/1044 , C09K2211/1048 , C09K2211/1059 , C09K2211/1096 , H01L51/0052 , H01L51/0058 , H01L51/0067 , H01L51/007 , H01L51/0071 , H01L51/0072 , H01L51/5012 , H01L51/5072 , H01L2251/308 , H05B33/10
摘要： A compound for an organic photoelectric device, an organic photoelectric device including the same, and a display device including the same the compound being represented by the following Chemical Formula 1:
摘要翻译：用于有机光电装置的化合物，包含该有机光电装置的有机光电装置和包含该化合物的显示装置，化合物由以下化学式1表示：

34. 发明申请

US20110212580A1 THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME 有权
标题翻译：薄膜晶体管，其制造方法以及具有该薄膜晶体管的平板显示器件
公开(公告)号：US20110212580A1
公开(公告)日：2011-09-01
申请号：US13102984
申请日：2011-05-06
申请人： Jin-Seong Park , Kwang-Suk Kim , Jong-Han Jeong , Jae-Kyeong Jeong , Steve Y. G. Mo
发明人： Jin-Seong Park , Kwang-Suk Kim , Jong-Han Jeong , Jae-Kyeong Jeong , Steve Y. G. Mo
IPC分类号： H01L21/336
CPC分类号： H01L29/7869 , H01L27/1225
摘要： A thin film transistor (TFT) using an oxide semiconductor layer as an active layer, a method of manufacturing the TFT, and a flat panel display (FPD) including the TFT are taught. The TFT includes a gate electrode formed on a substrate, an oxide semiconductor layer electrically insulated from the gate electrode by a gate insulating layer, and the oxide semiconductor layer including a channel region, a source region, and a drain region, and a source electrode and a drain electrode respectively electrically contacting the source region and the drain region. The oxide semiconductor layer is formed of an InZnO or IZO layer (indium zinc oxide layer) including Zr. The carrier density of the IZO layer is controlled to be 1×1013 to 1×1018 #cm−3 by controlling an amount of Zr.
摘要翻译：教导了使用氧化物半导体层作为有源层的薄膜晶体管（TFT），制造TFT的方法以及包括TFT的平板显示器（FPD）。 TFT包括形成在基板上的栅极电极，通过栅极绝缘层与栅极电绝缘的氧化物半导体层，以及包括沟道区域，源极区域和漏极区域的氧化物半导体层以及源极电极以及分别与源极区域和漏极区域电接触的漏极电极。氧化物半导体层由包含Zr的InZnO或IZO层（铟锌氧化物层）形成。通过控制Zr量，将IZO层的载流子密度控制在1×1013〜1×1018＃cm -3。

35. 发明申请

US20110147769A1 Organic light emitting display and manufacturing method thereof 有权
标题翻译：有机发光显示器及其制造方法
公开(公告)号：US20110147769A1
公开(公告)日：2011-06-23
申请号：US12926636
申请日：2010-12-01
申请人： Jae-Wook Kang , Jin-Seong Park
发明人： Jae-Wook Kang , Jin-Seong Park
IPC分类号： H01L51/50 , H01L51/40
CPC分类号： H01L27/3272 , H01L27/12 , H01L27/1225 , H01L27/1248 , H01L29/78633 , H01L29/7869
摘要： An organic light emitting display includes a gate electrode on a substrate, an active layer insulated from the gate electrode, source and drain electrodes that are insulated from the gate electrode and contact the active layer, an insulating layer between the active layer and the source and drain electrodes, a light blocking layer that is on the active layer and that blocks light of a predetermined wavelength from the active layer, and an organic light emitting device that is electrically connected to one of the source and drain electrodes.
摘要翻译：有机发光显示器包括在基板上的栅电极，与栅电极绝缘的有源层，与栅电极绝缘并与有源层接触的源电极和漏极，活性层和源之间的绝缘层，以及漏电极，有源层上的遮光层，阻挡来自有源层的预定波长的光;以及电连接到源电极和漏极之一的有机发光器件。

36. 发明申请

US20110127533A1 ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US20110127533A1
公开(公告)日：2011-06-02
申请号：US12955753
申请日：2010-11-29
申请人： Hyun-Joong Chung , Jin-Seong Park , Yeon-Gon Mo , Jong-Han Jeong
发明人： Hyun-Joong Chung , Jin-Seong Park , Yeon-Gon Mo , Jong-Han Jeong
IPC分类号： H01L51/50 , H01L51/40
CPC分类号： H01L27/3258 , H01L51/5237 , H01L2251/5346
摘要： An organic light-emitting display device which may be configured to prevent oxygen or water from penetrating from the outside and which may be more easily mass produced is disclosed. A method of manufacturing an organic light-emitting display device is also disclosed. The organic light-emitting display device may include, for example, a thin-film transistor (TFT) with a gate electrode, an active layer electrically insulated from the gate electrode, source and drain electrodes electrically insulated from the gate electrode and contacting the active layer, an organic light-emitting diode electrically connected to the TFT and an insulating layer interposed between the TFT and the organic light-emitting diode. The insulating layer may include, for example, a first insulating layer covering the TFT, a second insulating layer formed of metal oxide and formed on the first insulating layer and a third insulating layer formed of metal oxide or metal nitride and formed on the second insulating layer.
摘要翻译：公开了一种有机发光显示装置，其可以被配置为防止氧气或水从外部渗透并且可以更容易批量生产。还公开了一种制造有机发光显示装置的方法。有机发光显示装置可以包括例如具有栅电极的薄膜晶体管（TFT），与栅极电绝缘的有源层，与栅电极电绝缘的源极和漏极，并与活性物质接触电连接到TFT的有机发光二极管和介于TFT和有机发光二极管之间的绝缘层。绝缘层可以包括例如覆盖TFT的第一绝缘层，由金属氧化物形成并形成在第一绝缘层上的第二绝缘层和由金属氧化物或金属氮化物形成的第三绝缘层，并形成在第二绝缘层上层。

37. 发明申请

US20100200054A1 Compound for organic photoelectric device and organic photoelectric device including the same 有权
标题翻译：有机光电装置用复合物及其有机光电装置
公开(公告)号：US20100200054A1
公开(公告)日：2010-08-12
申请号：US12662450
申请日：2010-04-19
申请人： Ho-Kuk Jung , Myeong-Soon Kang , Jin-Seong Park , Nam-Soo Kim , Kyu-Yeol In , Eiu-Su Kang , Mi-Young Chae
发明人： Ho-Kuk Jung , Myeong-Soon Kang , Jin-Seong Park , Nam-Soo Kim , Kyu-Yeol In , Eiu-Su Kang , Mi-Young Chae
IPC分类号： H01L31/042 , C07D413/14 , C07D413/10 , C07D401/14 , C07D417/14 , C07D417/10 , C07D401/10
CPC分类号： C09K11/06 , C07D263/57 , C07D401/10 , C07D413/10 , C07D413/14 , C07D417/10 , C07D417/14 , C09B1/00 , C09B3/14 , C09B15/00 , C09B17/00 , C09B57/00 , C09B57/001 , C09K2211/1029 , C09K2211/1033 , C09K2211/1037 , C09K2211/1044 , C09K2211/1048 , C09K2211/1059 , C09K2211/1096 , H01L51/0067 , H01L51/0069 , H01L51/0071 , H01L51/0072 , H01L51/5012 , H01L51/5048 , H01L51/5052 , H05B33/14 , H05B33/20 , H05B33/22
摘要： A compound for an organic photoelectric device, represented by the following Chemical Formula 1:
摘要翻译：用于有机光电器件的化合物，由以下化学式1表示：

38. 发明授权

US08541258B2 Thin film transistor, method of manufacturing the same and flat panel display device having the same 有权
标题翻译：薄膜晶体管，其制造方法和具有该薄膜晶体管的平板显示装置
公开(公告)号：US08541258B2
公开(公告)日：2013-09-24
申请号：US13091614
申请日：2011-04-21
申请人： Min-Kyu Kim , Jong-Han Jeong , Tae-Kyung Ahn , Jae-Kyeong Jeong , Yeon-Gon Mo , Jin-Seong Park , Hyun-Joong Chung , Kwang-Suk Kim , Hui-Won Yang
发明人： Min-Kyu Kim , Jong-Han Jeong , Tae-Kyung Ahn , Jae-Kyeong Jeong , Yeon-Gon Mo , Jin-Seong Park , Hyun-Joong Chung , Kwang-Suk Kim , Hui-Won Yang
IPC分类号： H01L21/00
CPC分类号： H01L29/7869 , H01L29/78606
摘要： A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.
摘要翻译：使用氧化物半导体作为有源层的薄膜晶体管（TFT），TFT的制造方法以及具有TFT的平板显示装置包括：形成在基板上的源极和漏极; 由设置在源极和漏极上的氧化物半导体形成的有源层; 栅电极; 以及形成在活性层的顶表面和底表面中的至少一个上的界面稳定层。在TFT中，界面稳定层由带隙为3.0〜8.0eV的氧化物形成。由于界面稳定层具有与栅极绝缘层和钝化层相同的特性，因此保持了化学上高的界面稳定性。由于界面稳定层具有等于或大于有源层的带隙，所以物理地防止了电荷俘获。

39. 发明授权

US08470454B2 Material for organic photoelectric device and organic photoelectric device including the same 有权
标题翻译：有机光电器件用的材料及包括其的有机光电器件
公开(公告)号：US08470454B2
公开(公告)日：2013-06-25
申请号：US13033842
申请日：2011-02-24
申请人： Nam-Soo Kim , Myeong-Soon Kang , Ho-Kuk Jung , Eui-Su Kang , Young-Sung Park , Mi-Young Chae , Jin-Seong Park
发明人： Nam-Soo Kim , Myeong-Soon Kang , Ho-Kuk Jung , Eui-Su Kang , Young-Sung Park , Mi-Young Chae , Jin-Seong Park
IPC分类号： H01L51/54
CPC分类号： H01L51/0067 , C09B1/00 , C09B57/00 , C09B57/001 , H01L51/0059 , H01L51/0081 , H01L51/5012 , H01L51/5048 , H01L51/5092 , Y02E10/549
摘要： A material for an organic photoelectric device and an organic photoelectric device including the same, the material including an asymmetric compound represented by the following Chemical Formula 1: wherein, in Chemical Formula 1, Ar1 is hydrogen or a substituted or unsubstituted aryl, provided that when Ar1 is a substituted aryl having a substituent, Ar2 is not the same as the substituent of Ar1, Ar2 and Ar3 are each independently a substituted or unsubstituted carbazolyl, a substituted or unsubstituted C2 to C30 heteroaryl, a substituted or unsubstituted C2 to C30 arylamine, or a substituted or unsubstituted C2 to C30 heteroarylamine, L1 and L2 are each independently a substituted or unsubstituted phenylene, a substituted or unsubstituted naphthylene, or a substituted or unsubstituted anthracene, and m and n are each independently integers of 1 to 4.
摘要翻译：用于有机光电装置的材料和包含该有机光电装置的有机光电装置，该材料包括由以下化学式1表示的不对称化合物：其中在化学式1中，Ar 1为氢或取代或未取代的芳基，条件是当 Ar 1是具有取代基的取代芳基，Ar 2与Ar 1的取代基不同，Ar 2和Ar 3各自独立地为取代或未取代的咔唑基，取代或未取代的C 2至C 30杂芳基，取代或未取代的C 2至C 30芳基胺，或取代或未取代的C2至C30杂芳基胺，L1和L2各自独立地为取代或未取代的亚苯基，取代或未取代的亚萘基或取代或未取代的蒽，m和n各自独立地为1至4的整数。

40. 发明授权

US08330150B2 Organic light-emitting display device 有权
标题翻译：有机发光显示装置
公开(公告)号：US08330150B2
公开(公告)日：2012-12-11
申请号：US12829139
申请日：2010-07-01
申请人： Hyun-Joong Chung , Jin-Seong Park , Jong-Han Jeong , Jae-Kyeong Jeong , Yeong-Gon Mo , Min-Kyu Kim , Tae-Kyung Ahn , Hui-Won Yang , Kwang-Suk Kim , Eun-Hyun Kim , Jae-Wook Kang , Jae-Soon Im
发明人： Hyun-Joong Chung , Jin-Seong Park , Jong-Han Jeong , Jae-Kyeong Jeong , Yeong-Gon Mo , Min-Kyu Kim , Tae-Kyung Ahn , Hui-Won Yang , Kwang-Suk Kim , Eun-Hyun Kim , Jae-Wook Kang , Jae-Soon Im
IPC分类号： H01L29/08
CPC分类号： H01L27/3248 , H01L27/1225 , H01L27/3258 , H01L27/3262 , H01L29/66969 , H01L29/7869 , H01L51/52 , H01L51/5237 , H01L51/56 , H01L2227/323 , H01L2251/5346
摘要： An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. Additionally disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT. The insulating layer may include, for example, a first insulating layer contacting the active layer; and a second insulating layer formed of a metal oxide and disposed on the first insulating layer.
摘要翻译：公开了一种有机发光显示装置，其可被配置为防止水分或氧气从外部穿透有机发光显示装置。进一步公开了易于应用于大型显示装置和/或可容易地批量生产的有机发光显示装置。另外公开了一种制造有机发光显示装置的方法。有机发光显示装置可以包括例如薄膜晶体管（TFT），其包括栅电极，与栅电极绝缘的有源层，与栅电极绝缘的源电极和漏电极，并与活性层接触和设置在所述源极和漏极之间的绝缘层和所述有源层; 以及与TFT电连接的有机发光二极管。绝缘层可以包括例如与活性层接触的第一绝缘层; 以及由金属氧化物形成并设置在第一绝缘层上的第二绝缘层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式