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    • 32. 发明授权
    • Semiconductor laser apparatus and fabrication method thereof
    • 半导体激光装置及其制造方法
    • US07773654B2
    • 2010-08-10
    • US11092947
    • 2005-03-30
    • Yasuyuki BesshoMasayuki HataDaijiro InoueTsutomu Yamaguchi
    • Yasuyuki BesshoMasayuki HataDaijiro InoueTsutomu Yamaguchi
    • H01S5/00
    • H01S5/4025H01L2224/32245H01L2224/48463H01L2224/73265H01S5/4087
    • A blue-violet semiconductor laser device has a first p-electrode formed on its upper surface and a first n-electrode formed on its lower surface. A red semiconductor laser device has a second n-electrode formed on its upper surface and a second p-electrode formed on its lower surface. An infrared semiconductor laser device has a third n-electrode formed on its upper surface and a third p-electrode formed on its lower surface. Solder films are partially formed on the upper surface of the first p-electrode in the blue-violet semiconductor laser device. Two of the solder films are formed with a predetermined distance between them on the upper surface of the first p-electrode. This results in a portion of the first p-electrode being exposed. The first, second and third p-electrodes of the blue-violet semiconductor laser device, red semiconductor laser device, and infrared semiconductor laser device are common electrodes.
    • 蓝紫色半导体激光器件具有在其上表面上形成的第一p电极和形成在其下表面上的第一n电极。 红色半导体激光器件具有在其上表面上形成的第二n电极和形成在其下表面上的第二p电极。 红外半导体激光器件具有在其上表面上形成的第三n电极和形成在其下表面上的第三p电极。 在蓝紫色半导体激光器件中的第一p电极的上表面部分地形成焊料膜。 两个焊料膜在第一p电极的上表面之间以它们之间的预定距离形成。 这导致第一p电极的一部分被暴露。 蓝紫色半导体激光器件的第一,第二和第三p电极,红色半导体激光器件和红外半导体激光器件是公共电极。
    • 34. 发明授权
    • Nitride-based semiconductor light-emitting device and method of forming the same
    • 氮化物系半导体发光元件及其制造方法
    • US06744075B2
    • 2004-06-01
    • US10244448
    • 2002-09-17
    • Tsutomu YamaguchiKiyoshi OotaYasuhiko Nomura
    • Tsutomu YamaguchiKiyoshi OotaYasuhiko Nomura
    • H01L2715
    • H01L33/40H01L33/32H01S5/02H01S5/32341
    • A nitride-based semiconductor light-emitting device having low operating voltage with high reliability is obtained by improving adhesion of the whole of an electrode layer to a nitride-based semiconductor layer without damaging a low contact property. This nitride-based semiconductor light-emitting device comprises the nitride-based semiconductor layer formed on an active layer and the electrode layer partially formed on the nitride-based semiconductor layer. The electrode layer includes a first electrode layer containing a material having strong adhesion to the nitride-based semiconductor layer and a second electrode layer formed on the first electrode layer to have a portion coming into contact with the surface of the nitride-based semiconductor layer with weaker adhesion to the nitride-based semiconductor layer than the first electrode layer for reducing contact resistance of the electrode layer to the nitride-based semiconductor layer.
    • 通过改善整个电极层与氮化物基半导体层的粘附性而不损害低接触性能,获得具有高可靠性的低工作电压的氮化物基半导体发光器件。 这种氮化物基半导体发光器件包括形成在有源层上的氮化物基半导体层和部分地形成在氮化物基半导体层上的电极层。 电极层包括含有对氮化物系半导体层具有强粘附性的材料的第一电极层和形成在第一电极层上的第二电极层,以使其部分与氮化物基半导体层的表面接触, 与用于降低电极层与氮化物基半导体层的接触电阻的第一电极层相比,对氮化物基半导体层的粘合力弱。
    • 40. 发明申请
    • Semiconductor laser apparatus and fabrication method thereof
    • 半导体激光装置及其制造方法
    • US20050220159A1
    • 2005-10-06
    • US11092947
    • 2005-03-30
    • Yasuyuki BesshoMasayuki HataDaijiro InoueTsutomu Yamaguchi
    • Yasuyuki BesshoMasayuki HataDaijiro InoueTsutomu Yamaguchi
    • H01S5/40H01L29/00H01S5/022
    • H01S5/4025H01L2224/32245H01L2224/48463H01L2224/73265H01S5/4087
    • A blue-violet semiconductor laser device has a first p-electrode formed on its upper surface and a first n-electrode formed on its lower surface. A red semiconductor laser device has a second n-electrode formed on its upper surface and a second p-electrode formed on its lower surface. An infrared semiconductor laser device has a third n-electrode formed on its upper surface and a third p-electrode formed on its lower surface. Solder films are partially formed on the upper surface of the first p-electrode in the blue-violet semiconductor laser device. Two of the solder films are formed with a predetermined distance between them on the upper surface of the first p-electrode. This results in a portion of the first p-electrode being exposed. The first, second and third p-electrodes of the blue-violet semiconductor laser device, red semiconductor laser device, and infrared semiconductor laser device are common electrodes.
    • 蓝紫色半导体激光器件具有在其上表面上形成的第一p电极和形成在其下表面上的第一n电极。 红色半导体激光器件具有在其上表面上形成的第二n电极和形成在其下表面上的第二p电极。 红外半导体激光器件具有在其上表面上形成的第三n电极和形成在其下表面上的第三p电极。 在蓝紫色半导体激光器件中的第一p电极的上表面部分地形成焊料膜。 两个焊料膜在第一p电极的上表面之间以它们之间的预定距离形成。 这导致第一p电极的一部分被暴露。 蓝紫色半导体激光器件的第一,第二和第三p电极,红色半导体激光器件和红外半导体激光器件是公共电极。