专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US4942445A Lateral depletion mode tyristor 失效
标题翻译：横向耗尽型晶闸管
公开(公告)号：US4942445A
公开(公告)日：1990-07-17
申请号：US217449
申请日：1988-07-05
申请人： Bantval J. Baliga , Hsueh-Rong Chang
发明人： Bantval J. Baliga , Hsueh-Rong Chang
IPC分类号： H01L29/745
CPC分类号： H01L29/7455
摘要： A lateral depletion mode thyristor has both of its power electrodes and both of its emitter regions extending to the same surface of the semiconductor wafer. The device operates with both a regenerative current path and a non-regenerative current path. An insulated gate electrode structure is disposed in a trench and configured to pinch off the regenerative current path to force the current flowing therein to transfer to the non-regenerative current path, thereby interrupting the regenerative action within the device and causing it to turn off. In some embodiments, a second insulated gate electrode controls device turn-on.
摘要翻译：横向耗尽型晶闸管具有其功率电极和其两个发射极区域延伸到半导体晶片的相同表面。该装置使用再生电流路径和非再生电流路径进行工作。绝缘栅极电极结构设置在沟槽中并且被构造成夹紧再生电流路径以迫使其中流动的电流传递到非再生电流路径，从而中断器件内的再生动作并导致其断开。在一些实施例中，第二绝缘栅电极控制器件导通。

32. 发明授权

US4801986A Vertical double diffused metal oxide semiconductor VDMOS device with increased safe operating area and method 失效
标题翻译：垂直双扩散金属氧化物半导体VDMOS器件具有更大的安全工作面积和方法
公开(公告)号：US4801986A
公开(公告)日：1989-01-31
申请号：US33940
申请日：1987-04-03
申请人： Hsueh-Rong Chang , Bantval J. Baliga , Tat-Sing P. Chow
发明人： Hsueh-Rong Chang , Bantval J. Baliga , Tat-Sing P. Chow
IPC分类号： H01L29/06 , H01L29/10 , H01L29/739 , H01L29/78
CPC分类号： H01L29/0615 , H01L29/0696 , H01L29/1095 , H01L29/7395
摘要： A power field effect device has a gate grid having a plurality of elongate openings therein through which a base region forming a high voltage blocking junction with the underlying body was diffused. The openings have round ends in order to prevent the formation of spherical portions in the high voltage blocking junction. The round ends of adjacent openings are positioned close enough to each other that their diffusion regions merge, thereby raising the device breakdown voltage to that of the cylindrical junction portion along the straight edges of the junction. In an alternative embodiment, the openings do not have round ends and are positioned close enough together that their diffusions merge end to end.
摘要翻译：功率场效应器件具有栅极格栅，其中具有多个细长的开口，通过该栅极栅极与下面的主体形成高压阻挡连接处的基极区域被扩散。这些开口具有圆形端部，以防止在高压阻塞连接处形成球形部分。相邻开口的圆端彼此靠近，使其扩散区域合并，从而沿着连接点的直边缘将器件击穿电压提高到圆柱形接合部分的击穿电压。在替代实施例中，开口不具有圆形端部并且被定位成足够接近，使得它们的扩散部分从一端到另一端合并。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式