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    • 40. 发明授权
    • Method for fabricating electronic device
    • 电子设备制造方法
    • US07176124B2
    • 2007-02-13
    • US10923827
    • 2004-08-24
    • Susumu Matsumoto
    • Susumu Matsumoto
    • H01L21/4763
    • H01L21/76844H01L21/76805H01L21/76846H01L21/76861
    • A method for fabricating an electronic device includes: a step of forming a first conductor to become a wiring or a wiring plug in a first insulating film; a step of forming a second insulating film on the first insulating film and the first conductor and, after that, forming a hole reaching the top face of the first conductor in the second insulating film; a step of forming a first barrier metal film on a bottom and side walls of the hole and on the second insulating film; a step of removing a portion formed on the bottom of the hole in the first barrier metal film to thereby expose the top face of the first conductor; a step of performing a plasma process using a reducing gas after the step of exposing the top face of the first conductor; and a step of forming a second conductor to become a wiring plug or a wiring by filling a conductive film in the hole after the step of performing the plasma process.
    • 一种制造电子器件的方法包括:在第一绝缘膜中形成成为布线或布线插头的第一导体的步骤; 在所述第一绝缘膜和所述第一导体上形成第二绝缘膜的步骤,之后形成到所述第二绝缘膜中的所述第一导体的顶面的孔; 在所述孔的底壁和侧壁上以及所述第二绝缘膜上形成第一阻挡金属膜的步骤; 去除形成在所述第一阻挡金属膜中的所述孔的底部上的部分,从而暴露所述第一导体的顶面的步骤; 在暴露第一导体的顶面的步骤之后使用还原气体进行等离子体处理的步骤; 以及在执行等离子体处理的步骤之后,通过在孔中填充导电膜形成第二导体以成为布线插塞或布线的步骤。