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31. 发明授权

US4735822A Method for producing an electronic device having a multi-layer structure 失效
标题翻译：一种具有多层结构的电子装置的制造方法
公开(公告)号：US4735822A
公开(公告)日：1988-04-05
申请号：US945815
申请日：1986-12-24
申请人： Hirokazu Ohtoshi , Masaaki Hirooka , Junichi Hanna , Isamu Shimizu
发明人： Hirokazu Ohtoshi , Masaaki Hirooka , Junichi Hanna , Isamu Shimizu
IPC分类号： H01L31/04 , C23C16/44 , C23C16/452 , C23C16/48 , C23C16/54 , G03G5/08 , G03G5/082 , H01L21/205 , H01L21/263 , H01L21/336 , H01L29/78 , H01L29/786 , H01L31/075 , H01L31/20 , H01L21/203 , B05D3/06
CPC分类号： G03G5/08278 , C23C16/452 , C23C16/482 , H01L21/02425 , H01L21/0245 , H01L21/02505 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L31/075 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： A method for producing an electronic device having a multi-layer structure comprising one or more valence electron controlled semiconductor thin layers formed on a substrate, comprises forming at least one of said valence electron controlled semiconductor thin layers according to the photo CVD method and forming at least one of other constituent layers according to the method comprising introducing a gaseous starting material for film formation and a gaseous halogenic oxidizing agent having the property of oxidizing said starting material into a reaction space to effect chemical contact therebetween to thereby form a plurality of precursors including a precursor in an excited state and transferring at least one of these precursors into a film forming space communicated with the reaction space as a feed source for the constituent element of the deposited film.
摘要翻译：一种具有多层结构的电子器件的制造方法，该多层结构包括在基片上形成的一个或多个价数电子控制的半导体薄层，包括根据光CVD法形成至少一个所述价电子受控半导体薄层，并形成在根据包括引入用于成膜的气态原料和具有将所述起始材料氧化成反应空间的性质的气态卤素氧化剂的方法，至少一个其它组成层，以在其间形成化学接触，从而形成多个前体，包括在激发态中的前体，并将这些前体中的至少一种转移到与反应空间连通的成膜空间中，作为沉积膜的构成元素的进料源。

32. 发明授权

US5391232A Device for forming a deposited film 失效
标题翻译：用于形成沉积膜的装置
公开(公告)号：US5391232A
公开(公告)日：1995-02-21
申请号：US73976
申请日：1993-06-08
申请人： Masahiro Kanai , Masaaki Hirooka , Junichi Hanna , Isamu Shimizu , Eiji Takeuchi
发明人： Masahiro Kanai , Masaaki Hirooka , Junichi Hanna , Isamu Shimizu , Eiji Takeuchi
IPC分类号： C23C16/44 , C23C16/455 , H01L31/20 , C23C16/00
CPC分类号： C23C16/45568 , C23C16/455 , C23C16/45561 , C23C16/45576 , H01L31/202 , Y02E10/50
摘要： There is described a device for forming a deposited film on a substrate in a vacuum chamber through utilization of reaction between a gasifiable starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidization action for the gasifiable starting material which has a gas introducing means comprising a pipe for introducing said gasifiable starting material and a pipe for introducing said gaseous halogenic oxidizing agent where the pipes are arranged in a multi-concentric structure and at least one of the pipes except the outermost pipe is constituted of a porous pipe or has a hole opened through the wall thereof and the outermost pipe has at least one opening oriented toward the substrate.
摘要翻译：描述了通过利用用于形成沉积膜的可气化起始材料与具有可气化起始材料的氧化作用性质的气态卤素氧化剂之间的反应在真空室中在基板上形成沉积膜的装置，具有气体引入装置，包括用于引入所述可气化起始材料的管道和用于引入所述气态卤素氧化剂的管道，其中所述管道以多中心结构布置，并且除了最外管道之外的至少一个管道由多孔管或具有穿过其壁开口的孔，并且最外管具有朝向基板的至少一个开口。

33. 发明授权

US4804558A Process for producing electroluminescent devices 失效
标题翻译：电致发光器件的制造方法
公开(公告)号：US4804558A
公开(公告)日：1989-02-14
申请号：US942793
申请日：1986-12-17
申请人： Keishi Saitoh , Masaaki Hirooka , Junichi Hanna , Isamu Shimizu
发明人： Keishi Saitoh , Masaaki Hirooka , Junichi Hanna , Isamu Shimizu
IPC分类号： C09K11/00 , C09K11/56 , C09K11/88 , C23C16/30 , C23C16/44 , G09F9/30 , H01L21/205 , H05B33/10 , H05B33/12 , H05B33/14 , B05D5/06 , B05D5/12
CPC分类号： H05B33/145 , H05B33/10
摘要： A process for producing an electroluminescent device comprises providing in a film forming space for forming an electroluminescent film a substrate having an electrode formed on the surface thereof, said electrtode optionally having a first insulating layer formed thereon, introducing into said film forming space the compounds (A), (B) and (C) represented by the general formulae (A), (B) and (C) shown below and a gaseous halogenic oxidizing agent capable of chemically reacting with at least one of said compounds (A), (B) and (C), respectively, to thereby form an electroluminescent film on said electrode of said substrate, and if desired forming a second insulating layer and electrode in succession thereon:MmRn (A)AaBb (B)JjQq (C)wherein m is a positive integer equal to the valence of R or said valence multiplied by an integer, n is a positive integer equal to the valence of M or said valence multiplied by an integer, M is zinc (Zn) element, R is hydrogen (H), halogen (X) or hydrocarbon group; a is a positive integer equal to the valence of B or said valence multiplied by an integer, b is a positive integer equal to the valence of A or said valence multiplied by an integer, A is sulfur (S) or selenium (Se) element, B is hydrogen (H), halogen (X) or hydrocarbon group; j is a positive integer equal to the valence of Q or said valence multiplied by an integer, q is a positive integer equal to the valence of J or said valence multiplied by an integer, J is manganese (Mn) or a rare earth metal element, Q is hydrogen (H), halogen (X) or hydrocarbon group.
摘要翻译：一种电致发光器件的制造方法，其特征在于，在形成电致发光膜的膜形成空间中设置具有形成在其表面上的电极的基板，所述电极可任选地具有形成在其上的第一绝缘层，将所述化合物 A），（B）和（C）和下述通式（A），（B）和（C）表示的气态卤素氧化剂：能够与所述化合物（A）， B）和（C），从而在所述基板的所述电极上形成电致发光膜，并且如果需要，则依次形成第二绝缘层和电极：MmRn（A）AaBb（B）JjQq（C）其中m 是等于R的化合价或所述价数乘以整数的正整数，n是等于M的价数或所述化合价乘以整数的正整数，M是锌（Zn）元素，R是氢（H ），卤素（X）或水合 bon组 a是等于B的价数或所述化合价乘以整数的正整数，b是等于A的价数或所述价数乘以整数的正整数，A是硫（S）或硒（Se）元素，B为氢（H），卤素（X）或烃基; j是等于Q的化合价或所述化合价乘以整数的正整数，q是等于J的化合价或所述化合价乘以整数的正整数，J是锰（Mn）或稀土金属元素 Q是氢（H），卤素（X）或烃基。

34. 发明授权

US4803947A Apparatus for forming deposited film 失效
标题翻译：用于形成沉积膜的装置
公开(公告)号：US4803947A
公开(公告)日：1989-02-14
申请号：US3053
申请日：1987-01-13
申请人： Masao Ueki , Masaaki Hirooka , Junichi Hanna , Isamu Shimizu
发明人： Masao Ueki , Masaaki Hirooka , Junichi Hanna , Isamu Shimizu
IPC分类号： C23C16/44 , C23C16/54 , C23C16/00
CPC分类号： C23C16/44 , C23C16/545
摘要： There is disclosed an apparatus for forming deposited film which forms deposited film on a substrate by introducing a gaseous starting material for formation of deposited film and a gaseous oxidizing agent having the property of oxidation action for said gaseous starting material through separate routes respectively into a film forming space to thereby effect chemical contact therebetween, comprising one or two or more chambers for formation of deposited film and one or two or more etching chambers for etching at least one of said substrate and the deposited film formed on the substrate connected to one another.
摘要翻译：公开了一种用于形成沉积膜的装置，其通过将用于形成沉积膜的气态起始材料和具有氧化作用的气态氧化剂的气态氧化剂分别通过分开的路线引入到基板上，形成沉积膜，形成空间，从而实现其之间的化学接触，包括用于形成沉积膜的一个或两个或更多个腔室和用于蚀刻形成在彼此连接的衬底上的所述衬底和沉积膜中的至少一个的蚀刻室。

35. 发明授权

US4812328A Method for forming deposited film 失效
标题翻译：沉积膜形成方法
公开(公告)号：US4812328A
公开(公告)日：1989-03-14
申请号：US945689
申请日：1986-12-23
申请人： Keishi Saitoh , Masaaki Hirooka , Junichi Hanna , Isamu Shimizu
发明人： Keishi Saitoh , Masaaki Hirooka , Junichi Hanna , Isamu Shimizu
IPC分类号： H01L31/04 , C23C16/24 , C23C16/30 , C23C16/44 , C23C16/452 , C23C16/48 , G03G5/08 , H01L21/205 , B05D5/12
CPC分类号： H01L21/02425 , C23C16/452 , H01L21/02422 , H01L21/0245 , H01L21/02532 , H01L21/0262
摘要： A method for forming a deposited film by introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting material separately from each other into a reaction space to form a deposited film according to a chemical reaction, which comprises activating previously a gaseous substance (B) for formation of a band gap controller in an activation space to form an activated species and introducing said activated species into the reaction space to form a deposited film controlled in band gap on a substrate existing in the film forming space.
摘要翻译：通过将用于形成沉积膜的气态原料和对所述原料具有氧化作用的气态卤素氧化剂彼此分开引入反应空间形成沉积膜形成沉积膜的方法，以形成沉积膜化学反应，其包括先前激活用于在活化空间中形成带隙控制器的气态物质（B）以形成活化物质并将所述活化物质引入反应空间中以形成控制在带隙控制器上的沉积膜存在于成膜空间中的基板。

36. 发明授权

US4801468A Process for forming deposited film 失效
标题翻译：沉积膜形成工艺
公开(公告)号：US4801468A
公开(公告)日：1989-01-31
申请号：US831704
申请日：1986-02-21
申请人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
发明人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
IPC分类号： C23C16/30 , C23C16/452 , G03G5/082 , H01L21/205 , H01L31/075 , H01L31/20 , B05D3/06
CPC分类号： G03G5/08292 , C23C16/30 , C23C16/452 , H01L21/0237 , H01L21/02422 , H01L21/02425 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L31/075 , H01L31/20 , H01L31/202 , H01L31/204 , Y02E10/548 , Y02P70/521
摘要： A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing germanium and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, then providing them with discharge energy and thereby allowing both the species to react with each other thereby to form a deposited film on the substrate.
摘要翻译：用于形成沉积膜的方法包括将容纳基材的成膜空间引入其中包含通过分解含有锗和卤素的化合物形成的活性物质（A）和由用于成膜的化学物质形成的活性物质（B）其与所述活性物质（A）彼此分开反应，然后向其提供放电能量，从而允许物质彼此反应，从而在基底上形成沉积膜。

37. 发明授权

US4717585A Process for forming deposited film 失效
标题翻译：沉积膜形成工艺
公开(公告)号：US4717585A
公开(公告)日：1988-01-05
申请号：US826898
申请日：1986-02-06
申请人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
发明人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
IPC分类号： C23C16/22 , C23C16/452 , H01L21/205 , B05D3/06
CPC分类号： H01L21/0245 , C23C16/22 , C23C16/452 , H01L21/0237 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing carbon and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, and then allowing both the species to react with each other thereby to form a deposited film on the substrate.
摘要翻译：形成沉积膜的方法包括将含有碳和卤素的化合物分解形成的活性物质（A）和由用于成膜的化学物质形成的活性物质（B）引入到容纳基材的膜形成空间中其与所述活性物质（A）相互反应，然后允许两种物质彼此反应，从而在基材上形成沉积膜。

38. 发明授权

US4716048A Process for forming deposited film 失效
标题翻译：沉积膜形成工艺
公开(公告)号：US4716048A
公开(公告)日：1987-12-29
申请号：US828256
申请日：1986-02-11
申请人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
发明人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
IPC分类号： H01L21/205 , H01L21/469
CPC分类号： H01L21/0237 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing germanium and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately form each other, and then allowing both the species to react with each other thereby to form a deposited film on the substrate.
摘要翻译：用于形成沉积膜的方法包括将容纳基材的成膜空间引入其中包含通过分解含有锗和卤素的化合物形成的活性物质（A）和由用于成膜的化学物质形成的活性物质（B）其与所述活性物质（A）反应，彼此分开形成，然后允许物质彼此反应，从而在基底上形成沉积膜。

39. 发明授权

US4818563A Process for forming deposited film 失效
标题翻译：沉积膜形成工艺
公开(公告)号：US4818563A
公开(公告)日：1989-04-04
申请号：US831413
申请日：1986-02-20
申请人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
发明人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
IPC分类号： C23C16/22 , C30B25/02 , B05D3/06
CPC分类号： C23C16/22 , C30B25/02 , C30B29/08
摘要： A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing germanium and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, then providing them with heat energy and thereby allowing both the species to react with each other thereby to form a deposited film on the substrate.
摘要翻译：用于形成沉积膜的方法包括将容纳基材的成膜空间引入其中包含通过分解含有锗和卤素的化合物形成的活性物质（A）和由用于成膜的化学物质形成的活性物质（B）其与所述活性物质（A）彼此分开反应，然后向其提供热能，从而允许物质彼此反应，从而在基底上形成沉积膜。

40. 发明授权

US4798167A Apparatus for preparing a photoelectromotive force member having a concentric triplicate conduit for generating active species and precursor 失效
标题翻译：用于制备具有用于产生活性物质和前体的同心三重管道的光电动势部件的装置
公开(公告)号：US4798167A
公开(公告)日：1989-01-17
申请号：US44778
申请日：1987-05-01
申请人： Shunichi Ishihara , Keishi Saito , Shunri Oda , Isamu Shimizu
发明人： Shunichi Ishihara , Keishi Saito , Shunri Oda , Isamu Shimizu
IPC分类号： H01L31/04 , H01L21/20 , H01L31/075 , H01L31/20 , C23C16/50
CPC分类号： H01L31/202 , H01L31/075 , Y02E10/548 , Y02P70/521 , Y10S148/169
摘要： An apparatus for the preparation of a photoelectric conversion layer for a photoelectromotive force member includes:(a) a film-forming chamber having an inner space in which a substrate holder for a substrate is provided;(b) an exhaust pipe connected to the film-forming chamber and through a main valve to an exhaust pump;(c) a concentric triplicate conduit connected through a nozzle to the film-forming chamber. The concentric triplicate conduit includes:(i) an outer passage for introducing a gaseous raw material and formed by a circumferential wall and an inner wall having a plurality of gas liberation holes;(ii) a middle passage for applying microwave energy to said raw material gas to generate an active species and having a mixing region at the downstream side before the nozzle means, and(iii) a central passage situated horizontally within said middle passage (ii) for introducing a gaseous precursor and for transporting the gaseous precursor toward the film-forming chamber and being open at its end positioned in the mixing region leaving a desired distance to the nozzle means; said middle passage (ii) being formed by the inner wall of the outer passage and a circumferential wall of the central psssage (iii).Also included are:(d) a feed pipe for introducing said raw material to said outer passage (i);(e) a microwave power source for generating said microwave energy; and(f) a feed pipe for introducing said gaseous precursor to said central passage (iii).
摘要翻译：一种用于制备光电动势部件的光电转换层的装置包括：（a）具有内部空间的成膜室，在该内部空间中设置有用于基板的基板保持器; （b）排气管，其连接到成膜室并通过主阀到排气泵; （c）通过喷嘴连接到成膜室的同心三重导管。同心三重管道包括：（i）用于引入气态原料并由圆周壁形成的外部通道和具有多个气体释放孔的内壁; （ii）用于向所述原料气体施加微波能量以产生活性物质并且在喷嘴装置之前的下游侧具有混合区域的中间通道，以及（iii）水平地位于所述中间通道（ii）内的中心通道，用于引入气态前体和用于将气态前驱体输送到成膜室，并且在其位于混合区域的端部处开口，留下到喷嘴装置的期望距离; 所述中间通道（ii）由所述外部通道的内壁和所述中央通道（iii）的周壁形成。还包括：（d）用于将所述原料引入所述外通道（i）的进料管; （e）用于产生所述微波能量的微波功率源; 和（f）用于将所述气态前体引入所述中心通道（iii）的进料管。

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