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31. 发明授权

US07037966B2 Stain resistant coating 失效
标题翻译：防污涂层
公开(公告)号：US07037966B2
公开(公告)日：2006-05-02
申请号：US10874783
申请日：2004-06-23
申请人： Min Zheng , Kurt Wood , Lonnie Bryant
发明人： Min Zheng , Kurt Wood , Lonnie Bryant
IPC分类号： C08K3/10
CPC分类号： C08K3/34 , C08K9/04 , C08L27/12
摘要： The invention relates to a fluoropolymer resin-based composition useful as a stain resistant coating. The coating composition contains organosilicates and at least one water-scavenger, and has an extended pot life. Articles coated with the composition show superior weatherability, dirt shedding, and stain resistance, without a negative effect on gloss. The coating is especially useful on roofing materials, wall materials and other outdoor building materials.
摘要翻译：本发明涉及一种可用作防污涂层的含氟聚合物树脂基组合物。涂料组合物含有有机硅酸盐和至少一种除水剂，并且具有延长的适用期。用该组合物涂覆的物品显示出优异的耐候性，脱灰和耐污染性，而对光泽没有负面影响。涂层对屋面材料，墙体材料和其他室外建筑材料尤其有用。

32. 发明授权

US08563147B2 Thin seeded Co/Ni multilayer film with perpendicular anisotropy for read head sensor stabilization 有权
标题翻译：具有垂直各向异性的薄晶种Co / Ni多层膜，用于读取头传感器稳定
公开(公告)号：US08563147B2
公开(公告)日：2013-10-22
申请号：US12456935
申请日：2009-06-24
申请人： Kunliang Zhang , Min Li , Yuchen Zhou , Min Zheng
发明人： Kunliang Zhang , Min Li , Yuchen Zhou , Min Zheng
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： G11B5/332 , B82Y10/00 , B82Y25/00 , G11B5/315 , G11B5/3909 , G11B5/3912 , G11B5/3932 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49044 , Y10T29/49067 , Y10T428/1143 , Y10T428/115 , Y10T428/1157 , Y10T428/1171 , Y10T428/1193 , Y10T428/12819
摘要： A hard bias (HB) structure for producing longitudinal bias to stabilize a free layer in an adjacent spin valve is disclosed and includes a composite seed layer made of at least Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (Co/Ni)X laminated layer. The (Co/Ni)X HB layer deposition involves low power and high Ar pressure to avoid damaging Co/Ni interfaces and thereby preserves PMA. A capping layer is formed on the HB layer to protect against etchants in subsequent process steps. After initialization, magnetization direction in the HB layer is perpendicular to the sidewalls of the spin valve and generates an Mrt value that is greater than from an equivalent thickness of CoPt. A non-magnetic metal separation layer may be formed on the capping layer and spin valve to provide an electrical connection between top and bottom shields.
摘要翻译：公开了用于产生纵向偏压以稳定相邻自旋阀中的自由层的硬偏压（HB）结构，其包括至少由Ta制成的复合晶种层和具有fcc（111）或hcp（001）结构的金属层以提高上覆（Co / Ni）X层叠层的垂直磁各向异性（PMA）。（Co / Ni）X HB层沉积涉及低功率和高Ar压力，以避免损坏Co / Ni界面，从而保留PMA。在HB层上形成覆盖层以防止后续工艺步骤中的蚀刻剂。在初始化之后，HB层中的磁化方向垂直于自旋阀的侧壁，并产生大于CoPt当量厚度的Mrt值。可以在封盖层和自旋阀上形成非磁性金属分离层，以提供顶部和底部屏蔽之间的电连接。

33. 发明申请

US20130206461A1 Electrical Conductors and Methods of Manufacturing Electrical Conductors 有权
标题翻译：电导体和制造电导体的方法
公开(公告)号：US20130206461A1
公开(公告)日：2013-08-15
申请号：US13372155
申请日：2012-02-13
申请人： Mary Elizabeth Sullivan Malervy , Robert Daniel Hilty , Rodney I. Martens , Min Zheng , Jessica Henderson Brown Hemond , Zhengwei Liu
发明人： Mary Elizabeth Sullivan Malervy , Robert Daniel Hilty , Rodney I. Martens , Min Zheng , Jessica Henderson Brown Hemond , Zhengwei Liu
IPC分类号： H05K1/09 , B05D5/12 , B82Y40/00 , B82Y99/00
CPC分类号： H01L21/7685 , B82Y30/00 , C23C16/0272 , C23C16/26 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing an electrical conductor includes providing a substrate layer, depositing a surface layer on the substrate layer that has pores at least partially exposing the substrate layer, and forming graphene deposits in the pores. Optionally, the graphene deposits may be formed only in the pores. The graphene deposits may be formed along the exposed portions of the substrate layer. The graphene layers may be selectively deposited or may be deposited to cover an entire layer. Optionally, the forming of the graphene deposits may include processing the electrical conductor using a chemical vapor deposition process using an organic compound precursor and heat of sufficient temperature to facilitate graphene growth on the metal compound comprising the substrate layer.
摘要翻译：制造电导体的方法包括提供基底层，在基底层上沉积表面层，该表面层具有至少部分暴露基底层的孔，并在孔中形成石墨烯沉积物。任选地，石墨烯沉积物可以仅形成在孔中。石墨烯沉积物可以沿着基底层的暴露部分形成。可以选择性地沉积石墨烯层或者可以沉积石墨烯层以覆盖整个层。任选地，石墨烯沉积物的形成可以包括使用有机化合物前体的化学气相沉积工艺和足够温度的热来加工电导体以促进包含基底层的金属化合物上的石墨烯生长。

34. 发明申请

US20130084452A1 Very thin high coercivity film and process for making it 有权
标题翻译：非常薄的高矫顽力膜及其制造方法
公开(公告)号：US20130084452A1
公开(公告)日：2013-04-04
申请号：US13200790
申请日：2011-09-30
申请人： Kunliang Zhang , Min Zheng , Min Li
发明人： Kunliang Zhang , Min Zheng , Min Li
IPC分类号： B32B3/00 , C23F1/00 , H01F41/14
CPC分类号： G11B5/3163 , B32B15/01 , H01F10/123 , H01F41/22 , H01F41/34 , Y10T428/265
摘要： High Hc (>4,000 Oe) and high Hk (>1 Tesla) has been achieved in FePt films as thin as 70 Angstroms. This was accomplished by starting with a relatively thick film having the required high coercivity, coating it with a suitable material such as Ta, and then using ion beam etching to remove surface material until the desired thickness was reached.
摘要翻译：在70埃的FePt薄膜中已经实现了高Hc（> 4,000 Oe）和高Hk（> 1特斯拉）。这是通过用具有所需高矫顽力的相对厚的膜开始，用合适的材料如Ta涂覆，然后使用离子束蚀刻去除表面材料直至达到所需的厚度来实现的。

35. 发明授权

US08329320B2 Laminated high moment film for head applications 有权
标题翻译：用于头部应用的层压高力矩胶片
公开(公告)号：US08329320B2
公开(公告)日：2012-12-11
申请号：US12291715
申请日：2008-11-13
申请人： Kunliang Zhang , Min Li , Min Zheng , Fenglin Liu , Xiaomin Liu
发明人： Kunliang Zhang , Min Li , Min Zheng , Fenglin Liu , Xiaomin Liu
IPC分类号： G11B5/31 , G11B5/127
CPC分类号： G11B5/3116 , G11B5/1278 , Y10T428/11 , Y10T428/115 , Y10T428/1171
摘要： A laminated high moment film with a non-AFC configuration is disclosed that can serve as a seed layer for a main pole layer or as the main pole layer itself in a PMR writer. The laminated film includes a plurality of (B/M) stacks where B is an alignment layer and M is a high moment layer. Adjacent (B/M) stacks are separated by an amorphous layer that breaks the magnetic coupling between adjacent high moment layers and reduces remanence in a hard axis direction while maintaining a high magnetic moment and achieving low values for Hch, Hce, and Hk. The amorphous material layer may be made of an oxide, nitride, or oxynitride of one or more of Hf, Zr, Ta, Al, Mg, Zn, Ti, Cr, Nb, or Si, or may be Hf, Zr, Ta, Nb, CoFeB, CoB, FeB, or CoZrNb. Alignment layers are FCC soft ferromagnetic materials or non-magnetic FCC materials.
摘要翻译：公开了一种具有非AFC配置的叠层高力矩薄膜，其可用作主磁极层的种子层或作为PMR写入器中的主极点本身。层叠膜包括多个（B / M）堆叠，其中B是取向层，M是高力矩层。相邻的（B / M）堆叠被非晶层隔开，其破坏相邻高力矩层之间的磁耦合，并且在保持高磁矩并且实现Hch，Hce和Hk的低值的同时降低硬轴方向的剩磁。非晶材料层可以由Hf，Zr，Ta，Al，Mg，Zn，Ti，Cr，Nb或Si中的一种或多种的氧化物，氮化物或氮氧化物制成，或者可以是Hf，Zr，Ta， Nb，CoFeB，CoB，FeB或CoZrNb。对准层是FCC软铁磁材料或非磁性FCC材料。

36. 发明授权

US08110298B1 Media for high density perpendicular magnetic recording 有权
标题翻译：介质用于高密度垂直磁记录
公开(公告)号：US08110298B1
公开(公告)日：2012-02-07
申请号：US11367821
申请日：2006-03-03
申请人： Gunn Choe , B. Ramamurthy Acharya , Min Zheng , E. Noel Abarra
发明人： Gunn Choe , B. Ramamurthy Acharya , Min Zheng , E. Noel Abarra
IPC分类号： G11B5/66
CPC分类号： G11B5/66 , G11B5/65
摘要： Perpendicular magnetic recording media having a magnetic capping layer that is exchange coupled to an underlying perpendicular magnetic recording layer. The magnetic coupling layer is a granular layer having a high saturation magnetization (Ms). The perpendicular magnetic recording layer can include magnetic grains separated by an oxide grain boundary phase.
摘要翻译：具有磁性覆盖层的垂直磁记录介质，其交换耦合到下面的垂直磁记录层。磁耦合层是具有高饱和磁化强度（Ms）的粒状层。垂直磁记录层可以包括由氧化物晶界相分离的磁性颗粒。

37. 发明授权

US08054583B2 Ta/W film as heating device for dynamic fly height adjustment 有权
标题翻译： Ta / W薄膜作为动态飞行高度调节的加热装置
公开(公告)号：US08054583B2
公开(公告)日：2011-11-08
申请号：US12215825
申请日：2008-06-30
申请人： Min Zheng , Min Li , Chen-Jung Chien , Kowang Liu , Sung Chung
发明人： Min Zheng , Min Li , Chen-Jung Chien , Kowang Liu , Sung Chung
IPC分类号： G11B5/147
CPC分类号： G11B5/314 , G11B5/6064
摘要： A dynamic fly heater (DFH) for improved lifetime and better film uniformity is disclosed for a magnetic head. The heater has a lower amorphous Ta layer and an upper W layer to promote small grain size and reduced electro-migration. The composite film is especially advantageous for heaters greater than 1000 Angstroms thick where dR/R is difficult to control in the prior art. The DFH may be a (Ta/W)n laminate in which the Ta layers are about 30 Angstroms thick and the combined thickness of the W layers is from 400 to 1200 Angstroms. A Ta film is preferably sputter deposited with an Ar pressure of 3 to 5 mTorr and the W film is sputter deposited in the same chamber with a 3 to 20 mTorr Ar pressure. In one embodiment, a merged read/write head has one DFH in the read head and a second DFH in the write head.
摘要翻译：公开了一种用于改善寿命和更好的膜均匀性的动态飞行加热器（DFH）。加热器具有较低的非晶Ta层和上W层，以促进小晶粒尺寸和减少的电迁移。复合膜对于现有技术中dR / R难以控制的大于1000埃的加热器是特别有利的。 DFH可以是（Ta / W）n层叠体，其中Ta层的厚度约为30埃，W层的组合厚度为400至1200埃。优选以3至5mTorr的Ar压力溅射沉积Ta膜，并将W膜以3至20mTorr Ar压力溅射沉积在相同的室中。在一个实施例中，合并的读/写头在读头中具有一个DFH，在写头中具有第二DFH。

38. 发明申请

US20100276272A1 Method for fabricating a high coercivity hard bias structure for magnetoresistive sensor 有权
标题翻译：用于制造用于磁阻传感器的高矫顽力硬偏置结构的方法
公开(公告)号：US20100276272A1
公开(公告)日：2010-11-04
申请号：US12387377
申请日：2009-05-01
申请人： Min Zheng , Kunliang Zhang , Min Li
发明人： Min Zheng , Kunliang Zhang , Min Li
IPC分类号： C23C14/34 , G11B5/127
CPC分类号： C23C14/5833 , C23C14/025 , C23C14/14 , C23C14/5873 , G01R33/098 , G11B5/3163 , G11B5/3932
摘要： A hard bias (HB) structure for longitudinally biasing a free layer in a MR sensor is disclosed that includes a mildly etched seed layer and a hard bias (HB) layer on the etched seed layer. The HB layer may contain one or more HB sub-layers stacked on a lower sub-layer which contacts the etched seed layer. Each HB sub-layer is mildly etched before depositing another HB sub-layer thereon. The etch may be performed in an IBD chamber and creates a higher concentration of nucleation sites on the etched surface thereby promoting a smaller HB average grain size than would be realized with no etch treatments. A smaller HB average grain size is responsible for increasing Hcr in a CoPt HB layer to as high as 2500 to 3000 Oe. Higher Hcr is achieved without changing the seed layer or HB material and without changing the thickness of the aforementioned layers.
摘要翻译：公开了用于纵向偏置MR传感器中的自由层的硬偏置（HB）结构，其包括在蚀刻的种子层上的温和蚀刻的种子层和硬偏置（HB）层。 HB层可以包含堆叠在与蚀刻的种子层接触的下子层上的一个或多个HB子层。每个HB子层在其上沉积另一个HB子层之前被轻度蚀刻。蚀刻可以在IBD室中进行，并且在蚀刻表面上产生更高浓度的成核位点，从而促进比无蚀刻处理实现的更小的HB平均晶粒尺寸。较小的HB平均粒径负责将CoPt HB层中的Hcr增加到高达2500至3000 Oe。在不改变种子层或HB材料而不改变上述层的厚度的情况下实现更高的Hcr。

39. 发明申请

US20100119874A1 Laminated high moment film for head applications 有权
标题翻译：用于头部应用的层压高力矩胶片
公开(公告)号：US20100119874A1
公开(公告)日：2010-05-13
申请号：US12291715
申请日：2008-11-13
申请人： Kunliang Zhang , Min Li , Min Zheng , Fenglin Liu , Xiaomin Liu
发明人： Kunliang Zhang , Min Li , Min Zheng , Fenglin Liu , Xiaomin Liu
IPC分类号： G11B5/33 , C23C14/34
CPC分类号： G11B5/3116 , G11B5/1278 , Y10T428/11 , Y10T428/115 , Y10T428/1171
摘要： A laminated high moment film with a non-AFC configuration is disclosed that can serve as a seed layer for a main pole layer or as the main pole layer itself in a PMR writer. The laminated film includes a plurality of (B/M) stacks where B is an alignment layer and M is a high moment layer. Adjacent (B/M) stacks are separated by an amorphous layer that breaks the magnetic coupling between adjacent high moment layers and reduces remanence in a hard axis direction while maintaining a high magnetic moment and achieving low values for Hch, Hce, and Hk. The amorphous material layer may be made of an oxide, nitride, or oxynitride of one or more of Hf, Zr, Ta, Al, Mg, Zn, Ti, Cr, Nb, or Si, or may be Hf, Zr, Ta, Nb, CoFeB, CoB, FeB, or CoZrNb. Alignment layers are FCC soft ferromagnetic materials or non-magnetic FCC materials.
摘要翻译：公开了一种具有非AFC配置的叠层高力矩薄膜，其可用作主磁极层的种子层或作为PMR写入器中的主极点本身。层叠膜包括多个（B / M）堆叠，其中B是取向层，M是高力矩层。相邻（B / M）堆叠被非晶层隔开，其破坏相邻高力矩层之间的磁耦合，并且在保持高磁矩并且实现Hch，Hce和Hk的低值的同时降低硬轴方向的剩磁。非晶材料层可以由Hf，Zr，Ta，Al，Mg，Zn，Ti，Cr，Nb或Si中的一种或多种的氧化物，氮化物或氮氧化物制成，或者可以是Hf，Zr，Ta， Nb，CoFeB，CoB，FeB或CoZrNb。对准层是FCC软铁磁材料或非磁性FCC材料。

40. 发明申请

US20070054403A1 Method of preventing white blood cell interferences to red blood cell measurements of a blood sample 有权
标题翻译：防止白细胞干扰血液样本红细胞测量的方法
公开(公告)号：US20070054403A1
公开(公告)日：2007-03-08
申请号：US11210346
申请日：2005-08-24
申请人： Min Zheng , Jing Li , Yi Li , Michael Switzer
发明人： Min Zheng , Jing Li , Yi Li , Michael Switzer
IPC分类号： G01N33/48
CPC分类号： G01N33/491 , Y10T436/10 , Y10T436/101666 , Y10T436/107497 , Y10T436/25 , Y10T436/25125
摘要： Methods of prevention and correction of white blood cell interferences to the measurements of mean cell volume (MCV), red blood cell concentration (RBC) and hematocrit (Hct) of a blood sample are disclosed. The interference to MCV can be prevented by identifying a valley between the red blood cell and white blood cell modes on the red blood cell distribution histogram, defining a red blood cell region using the valley and calculating MCV within the defined region. Alternatively, a curve fit of the white blood cell population on the red blood cell distribution histogram can be used to exclude the white blood cells. RBC can be corrected by subtracting the white blood cell concentration obtained from the analysis of a second aliquot sample, when the white blood cell concentration (WBC) exceeds a predetermined criterion. Hct of the blood sample can be calculated using the obtained MCV and RBC.
摘要翻译：公开了对血液样本的平均细胞体积（MCV），红细胞浓度（RBC）和血细胞比容（Hct）的测量的白细胞干扰的预防和校正方法。通过在红细胞分布直方图上识别红细胞和白细胞模式之间的谷，可以防止对MCV的干扰，使用谷定义红细胞区域并计算定义区域内的MCV。或者，可以使用白细胞群体对红细胞分布直方图的曲线拟合来排除白细胞。当白细胞浓度（WBC）超过预定标准时，可通过减去从第二等份样品的分析获得的白细胞浓度来校正RBC。可以使用获得的MCV和RBC计算血液样品的Hct。

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