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31. 发明申请

US20100330622A1 BACTERIUM PRODUCING A PRODUCT OF A REACTION CATALYZED BY A PROTEIN HAVING 2-OXOGLUTARATE-DEPENDENT ENZYME ACTIVITY AND A METHOD FOR MANUFACTURING THE PRODUCT 有权
标题翻译：生产由具有2-羟基脂肪酸依赖性酶活性的蛋白质催化的反应产物的细菌和制造该产品的方法
公开(公告)号：US20100330622A1
公开(公告)日：2010-12-30
申请号：US12819485
申请日：2010-06-21
申请人： Sergey Vasilievich Smirnov , Natalia Nikolaevna Samsonova , Veronika Aleksandrovna Kotliarova , Natalia Yurievna Rushkevich , Olga Sergeevna Beznoschenko , Tatyana Aleksandrovna Bachina , Yuki Imabayashi , Masakazu Sugiyama , Shunichi Suzuki
发明人： Sergey Vasilievich Smirnov , Natalia Nikolaevna Samsonova , Veronika Aleksandrovna Kotliarova , Natalia Yurievna Rushkevich , Olga Sergeevna Beznoschenko , Tatyana Aleksandrovna Bachina , Yuki Imabayashi , Masakazu Sugiyama , Shunichi Suzuki
IPC分类号： C12P13/24 , C12N1/21 , C12P1/04 , C12P13/06
CPC分类号： C12P13/06 , C12N9/0069 , C12N9/0071 , C12P13/24
摘要： A method for manufacturing a product of a reaction catalyzed by a protein having 2-oxoglutarate-dependent enzyme activity such as (2S,3R,4S)-4-hydroxy-L-isoleucine or a salt thereof using a bacterium transformed with a DNA fragment containing a gene coding for a protein having 2-oxoglutarate-dependent enzyme activity such as L-isoleucine dioxygenase activity; and wherein said bacterium has the ability to produce a product such as (2S,3R,4S)-4-hydroxy-L-isoleucine.
摘要翻译：使用由DNA片段转化的细菌制造由具有2-氧戊二酸依赖性酶活性的蛋白质（例如（2S，3R，4S）-4-羟基-L-异亮氨酸或其盐）催化的反应产物的方法含有编码具有2-氧戊二酸依赖性酶活性的蛋白质的基因，例如L-异亮氨酸双加氧酶活性; 并且其中所述细菌具有产生如（2S，3R，4S）-4-羟基-L-异亮氨酸的产物的能力。

32. 发明授权

US07575910B2 Method for producing L-fuculose and method for producing L-fucose 失效
标题翻译： L-岩藻糖的生产方法和L-岩藻糖的生产方法
公开(公告)号：US07575910B2
公开(公告)日：2009-08-18
申请号：US11532618
申请日：2006-09-18
申请人： Shunichi Suzuki , Kunihiko Watanabe
发明人： Shunichi Suzuki , Kunihiko Watanabe
IPC分类号： C12N9/02 , C12N1/20 , C12P19/02 , C07H21/04
CPC分类号： C12P19/02 , C12N9/0004 , C12N9/0006 , C12N9/0036
摘要： The present invention provides a method for producing L-fuculose and L-fucose which is suitable as an industrial method. L-Fuculose is synthesized from L-fucitol in the presence of a microorganism-derived protein having a dehydrogenase activity which results in production of L-fuculose from L-fucitol. The reaction system preferably contains NADH oxidase. L-Fuculose thus synthesized is then converted into L-fucose.
摘要翻译：本发明提供一种适用于工业方法的L-岩藻糖和L-岩藻糖的生产方法。在具有脱氢酶活性的微生物衍生的蛋白质的存在下，从L-岩藻糖醇合成L-赖螺蛋白糖，其导致从L-岩藻糖醇生产L-赖螺酮糖。反应体系优选含有NADH氧化酶。然后将由此合成的L-福乐糖转化成L-岩藻糖。

33. 发明授权

US07858348B2 N-acetyl-(R,S)-beta-amino acid acylase gene 有权
标题翻译： N-乙酰基 - （R，S） - 氨基酸酰基转移酶基因
公开(公告)号：US07858348B2
公开(公告)日：2010-12-28
申请号：US11782260
申请日：2007-07-24
申请人： Shunichi Suzuki , Yuki Imabayashi , Kunihiko Watanabe , Hisashi Kawasaki , Tsuyoshi Nakamatsu
发明人： Shunichi Suzuki , Yuki Imabayashi , Kunihiko Watanabe , Hisashi Kawasaki , Tsuyoshi Nakamatsu
IPC分类号： C12P13/04
CPC分类号： C12N9/80
摘要： The present invention provides genes that encode the N-acetyl-(R,S)-β-amino acid acylases. The N-acetyl-(R,S)-β-amino acid acylases were isolated and purified from bacterial cells and the nucleotide sequences were determined. A host, such as Escherichia coli, was used to construct a high-expression system for these genes. The N-acetyl-(R)-β-amino acid acylase produced by Burkholderia sp. AJ110349 (FERM BP-10366) includes, for example, the protein having the amino acid sequence shown in SEQ. ID. NO. 8. The gene encoding this enzyme includes, for example, the DNA having the nucleotide sequence as shown in SEQ. ID. NO. 7. The N-acetyl-(S)-β-amino acid acylase produced by Burkholderia sp. AJ110349 (FERM BP-10366) includes, for example, the protein having the amino acid sequence shown in SEQ. ID. NO. 10. The gene encoding this enzyme includes, for example, the DNA having the nucleotide sequence shown inshown in SEQ. ID. NO. 9. The N-acetyl-(R)-β-amino acid acylase produced by Variovorax sp. AJ110348 (FERM BP-10367) includes, for example, the protein comprised of the amino acid sequence shown in SEQ. ID. NO. 12. The gene encoding this enzyme includes, for example, the DNA having the nucleotide sequence shown inshown in SEQ. ID. NO. 11.
摘要翻译：本发明提供编码N-乙酰基 - （R，S） - 氨基酸酰基转移酶的基因。从细菌细胞中分离纯化N-乙酰基 - （R，S） - 氨基酸酰基转移酶，测定核苷酸序列。宿主如大肠杆菌用于构建这些基因的高表达系统。由伯克霍尔德氏菌属（Burkholderia sp。）生产的N-乙酰基 - （R） - AJ110349（FERM BP-10366）包括例如具有SEQ ID NO：1所示氨基酸序列的蛋白质。 ID。没有。编码该酶的基因包括例如具有SEQ ID NO：1所示核苷酸序列的DNA。 ID。没有。由伯克霍尔德氏菌属（Burkholderia sp。）生产的N-乙酰基 - （S） - 氨基酸酰基转移酶 AJ110349（FERM BP-10366）包括例如具有SEQ ID NO：1所示氨基酸序列的蛋白质。 ID。没有。编码该酶的基因包括例如具有SEQ ID NO：1所示核苷酸序列的DNA。 ID。没有。 9.由Variovorax sp。生产的N-乙酰基 - （R） - 氨基酸酰基转移酶 AJ110348（FERM BP-10367）包括例如由SEQ ID NO：1所示的氨基酸序列组成的蛋白质。 ID。没有。编码该酶的基因包括例如具有SEQ ID NO：1所示核苷酸序列的DNA。 ID。没有。 11。

34. 发明申请

US20080241895A1 N-Acetyl-(R,S)-beta-Amino Acid Acylase Gene 有权
标题翻译： N-乙酰基 - （R，S） - 氨基酸酰基酶
公开(公告)号：US20080241895A1
公开(公告)日：2008-10-02
申请号：US11782260
申请日：2007-07-24
申请人： Shunichi Suzuki , Yuki Imabayashi , Kunihiko Watanabe , Hisashi Kawasaki , Tsuyoshi Nakamatsu
发明人： Shunichi Suzuki , Yuki Imabayashi , Kunihiko Watanabe , Hisashi Kawasaki , Tsuyoshi Nakamatsu
IPC分类号： C12P13/04 , C07H21/04 , C12N9/80 , C12N1/21
CPC分类号： C12N9/80
摘要： The present invention provides genes that encode the N-acetyl-(R,S)-β-amino acid acylases. The N-acetyl-(R,S)-β-amino acid acylases were isolated and purified from bacterial cells and the nucleotide sequences were determined. A host, such as Escherichia coli, was used to construct a high-expression system for these genes. The N-acetyl-(R)-β-amino acid acylase produced by Burkholderia sp. AJ110349 (FERM BP-10366) includes, for example, the protein having the amino acid sequence shown in SEQ. ID. NO. 8. The gene encoding this enzyme includes, for example, the DNA having the nucleotide sequence as shown in SEQ. ID. NO. 7. The N-acetyl-(S)-β-amino acid acylase produced by Burkholderia sp. AJ110349 (FERM BP-10366) includes, for example, the protein having the amino acid sequence shown in SEQ. ID. NO. 10. The gene encoding this enzyme includes, for example, the DNA having the nucleotide sequence shown inshown in SEQ. ID. NO. 9. The N-acetyl-(R)-β-amino acid acylase produced by Variovorax sp. AJ110348 (FERM BP-10367) includes, for example, the protein comprised of the amino acid sequence shown in SEQ. ID. NO. 12. The gene encoding this enzyme includes, for example, the DNA having the nucleotide sequence shown inshown in SEQ. ID. NO. 11.
摘要翻译：本发明提供编码N-乙酰基 - （R，S） - 氨基酸酰基转移酶的基因。从细菌细胞中分离纯化N-乙酰基 - （R，S） - 氨基酸酰基转移酶，确定核苷酸序列。宿主如大肠杆菌用于构建这些基因的高表达系统。伯克霍尔德氏菌属生产的N-乙酰基 - （R） - 氨基酸酰基转移酶 AJ110349（FERM BP-10366）包括例如具有SEQ ID NO：1所示氨基酸序列的蛋白质。 ID。没有。编码该酶的基因包括例如具有SEQ ID NO：1所示核苷酸序列的DNA。 ID。没有。由伯克霍尔德氏菌属生产的N-乙酰基 - （S） - 氨基酸酰基转移酶 AJ110349（FERM BP-10366）包括例如具有SEQ ID NO：1所示氨基酸序列的蛋白质。 ID。没有。编码该酶的基因包括例如具有SEQ ID NO：1所示核苷酸序列的DNA。 ID。没有。 9.由Variovorax sp。生产的N-乙酰基 - （R） - 氨基酸酰基转移酶 AJ110348（FERM BP-10367）包括例如由SEQ ID NO：1所示的氨基酸序列组成的蛋白质。 ID。没有。编码该酶的基因包括例如具有SEQ ID NO：1所示核苷酸序列的DNA。 ID。没有。 11。

35. 发明申请

US20070026504A1 METHOD FOR PRODUCING L-FUCULOSE AND METHOD FOR PRODUCING L-FUCOSE 失效
标题翻译：生产L-纤维素的方法和生产L-纤维的方法
公开(公告)号：US20070026504A1
公开(公告)日：2007-02-01
申请号：US11532618
申请日：2006-09-18
申请人： Shunichi Suzuki , Kunihiko Watanabe
发明人： Shunichi Suzuki , Kunihiko Watanabe
IPC分类号： C12P19/02 , C12N9/02 , C12N1/21
CPC分类号： C12P19/02 , C12N9/0004 , C12N9/0006 , C12N9/0036
摘要： The present invention provides a method for producing L-fuculose and L-fucose which is suitable as an industrial method. L-Fuculose is synthesized from L-fucitol in the presence of a microorganism-derived protein having a dehydrogenase activity which results in production of L-fuculose from L-fucitol. The reaction system preferably contains NADH oxidase. L-Fuculose thus synthesized is then converted into L-fucose.
摘要翻译：本发明提供一种适用于工业方法的L-岩藻糖和L-岩藻糖的生产方法。在具有脱氢酶活性的微生物衍生的蛋白质的存在下，从L-岩藻糖醇合成L-赖螺蛋白糖，其导致从L-岩藻糖醇生产L-赖螺酮糖。反应体系优选含有NADH氧化酶。然后将由此合成的L-福乐糖转化成L-岩藻糖。

36. 发明申请

US20120263269A1 METHOD OF REDUCING CORROSION OF NUCLEAR REACTOR STRUCTURAL MATERIAL 有权
标题翻译：减少核反应堆结构材料腐蚀的方法
公开(公告)号：US20120263269A1
公开(公告)日：2012-10-18
申请号：US11008288
申请日：2004-12-10
申请人： Seiji Yamamoto , Tadasu Yotsuyanagi , Nagayoshi Ichikawa , Tetsuo Oosato , Masato Okamura , Junichi Takagi , Kenji Yamazaki , Shunichi Suzuki , Kenro Takamori , Mitsuru Sambongi , Takeshi Shibano , Takashi Hirano , Yuichi Fukaya
发明人： Seiji Yamamoto , Tadasu Yotsuyanagi , Nagayoshi Ichikawa , Tetsuo Oosato , Masato Okamura , Junichi Takagi , Kenji Yamazaki , Shunichi Suzuki , Kenro Takamori , Mitsuru Sambongi , Takeshi Shibano , Takashi Hirano , Yuichi Fukaya
IPC分类号： G21C9/00
CPC分类号： G21C17/0225 , G21C19/28
摘要： In a method of reducing corrosion of a material constituting a nuclear reactor structure, an electrochemical corrosion potential is controlled by injecting a solution or a suspension containing a substance generating an excitation current by an action of at least one of radiation, light, and heat existing in a nuclear reactor, or a metal or a metallic compound forming the substance generating the excitation current under the condition in the nuclear reactor to allow the substance generating the excitation current to adhere to the surface of the nuclear reactor structural material, and by injecting hydrogen in cooling water of the nuclear reactor while controlling the hydrogen concentration in a feed water.
摘要翻译：在减少构成核反应堆结构的材料的腐蚀的方法中，电化学腐蚀电位通过注入含有产生激发电流的物质的溶液或悬浮液来控制，该溶液或悬浮液通过存在辐射，光和热中的至少一种的作用或在核反应堆中形成产生激励电流的物质的金属或金属化合物，以使产生激发电流的物质附着到核反应堆结构材料的表面，并通过注入氢同时控制供水中的氢浓度。

37. 发明申请

US20120128886A1 NUCLEAR POWER PLANT, METHOD OF FORMING CORROSION-RESISTANT COATING THEREFOR, AND METHOD OF OPERATING NUCLEAR POWER PLANT 有权
标题翻译：核能发电厂，其耐腐蚀涂层的形成方法和操作核电厂的方法
公开(公告)号：US20120128886A1
公开(公告)日：2012-05-24
申请号：US13362962
申请日：2012-01-31
申请人： Masato Okamura , Tetsuo Oosato , Seiji Yamamoto , Tadasu Yotsuyanagi , Nagayoshi Ichikawa , Kenji Yamazaki , Junichi Takagi , Hidehiro Urata , Shunichi Suzuki , Kenro Takamori , Junichi Suzuki
发明人： Masato Okamura , Tetsuo Oosato , Seiji Yamamoto , Tadasu Yotsuyanagi , Nagayoshi Ichikawa , Kenji Yamazaki , Junichi Takagi , Hidehiro Urata , Shunichi Suzuki , Kenro Takamori , Junichi Suzuki
IPC分类号： C23C4/10 , C23C16/00
CPC分类号： G21C17/0225 , G21C13/08 , G21C17/022 , G21Y2002/103 , G21Y2004/10 , Y02E30/40
摘要： In a nuclear power plant, a corrosion-resistant oxide film on a surface of the metal component of a reactor structure is exposed to a high-temperature water, the corrosion-resistant oxide film containing an oxide having a property of a P-type semiconductor, and a catalytic substance having a property of an N-type semiconductor is deposited on the oxide film. The oxide film maintains the property of the P-type semiconductor.
摘要翻译：在核电站中，将反应器结构体的金属成分表面的耐腐蚀氧化膜暴露于高温水中，含有具有P型半导体的性质的氧化物的耐腐蚀性氧化物膜，并且在氧化物膜上沉积具有N型半导体性质的催化物质。氧化膜保持P型半导体的性质。

38. 发明授权

US06936490B2 Semiconductor wafer and its manufacturing method 失效
标题翻译：半导体晶片及其制造方法
公开(公告)号：US06936490B2
公开(公告)日：2005-08-30
申请号：US10432597
申请日：2002-09-05
申请人： Yoshihisa Abe , Shunichi Suzuki , Hideo Nakanishi , Kazutaka Terashima , Jun Komiyama
发明人： Yoshihisa Abe , Shunichi Suzuki , Hideo Nakanishi , Kazutaka Terashima , Jun Komiyama
IPC分类号： C30B25/02 , H01L21/04 , H01L21/00
CPC分类号： C30B25/02 , C30B29/36 , C30B29/406 , H01L21/0445
摘要： A method of epitaxially growing a SiC film on a Si substrate, including: (a) supplying a raw material gas containing a gas having P (phosphorus) element and a gas having B (boron) element on a Si substrate, and thereby synthesizing an amorphous BP thin film having a thickness of 5 nm or more and 100 nm or less on the Si substrate; (b) further supplying a raw material gas containing a gas having P element and a gas having B element on the Si substrate, and thereby synthesizing a cubic boron phosphide single crystal film having a thickness of 5 nm or more and 1000 nm or less on the Si substrate; and (c) supplying a gas having carbon element and a gas having silicon element on the Si substrate thereon the BP single crystal film is formed, and thereby synthesizing a beta-SiC single crystal film or an amorphous SiC film having a thickness of 1 nm or more and several hundreds nanometers or less on the cubic boron phosphide single crystal film on the Si substrate.
摘要翻译：一种在Si衬底上外延生长SiC膜的方法，包括：（a）在Si衬底上提供含有P（磷）元素的气体和具有B（硼）元素的气体的原料气体，从而合成在Si衬底上具有5nm以上且100nm以下的厚度的无定形BP薄膜; （b）在Si衬底上进一步供给包含具有P元素的气体和具有B元素的气体的原料气体，由此合成厚度为5nm以上且1000nm以下的立方晶磷化硼单晶膜， Si衬底; 和（c）在Si衬底上提供具有碳元素的气体和具有硅元素的气体，形成BP单晶膜，从而合成厚度为1nm的β-SiC单晶膜或非晶SiC膜或更多和几百纳米或更少的Si基板上的立方硼化磷单晶膜。

39. 发明授权

US06363098B1 Carbon electrode for melting quartz glass and method of fabricating thereof 失效
标题翻译：用于熔化石英玻璃的碳电极及其制造方法
公开(公告)号：US06363098B1
公开(公告)日：2002-03-26
申请号：US09672982
申请日：2000-09-29
申请人： Hirotaka Hagihara , Takakazu Mori , Atsuro Miyao , Kiyoaki Misu , Shinya Wagatsuma , Shunichi Suzuki
发明人： Hirotaka Hagihara , Takakazu Mori , Atsuro Miyao , Kiyoaki Misu , Shinya Wagatsuma , Shunichi Suzuki
IPC分类号： H05B706
CPC分类号： C03B19/095 , C04B35/532 , H05B3/03 , H05B7/06 , H05B7/07 , Y02P40/57
摘要： The invention is to offer such a carbon electrode of less consumption and a long useful life and a method of fabricating the same which prevents particles from falling from carbon electrodes into a melting quartz glass, checks occurrence of bubbles in the quartz glass, and avoids lowering of single crystallizing yield by bubbles existing in a transparent layer formed in the vicinity of an inside surface of a quartz glass crucible when lifting silicon single crystal by using the quartz glass crucible made by using the carbon electrodes. The carbon electrode to be used for melting quartz glass by an arc discharge, is characterized in that an electrode material is composed of carbon of bulk density being 1.80 g/cm3 or higher and a three-point bending strength being 35 MPa or higher.
摘要翻译：本发明提供一种消耗量少，使用寿命长的碳电极及其制造方法，其防止颗粒从碳电极落入熔融石英玻璃中，检查石英玻璃中的气泡的发生，并避免降低通过使用通过使用碳电极制造的石英玻璃坩埚提升硅单晶时，存在于形成在石英玻璃坩埚的内表面附近的透明层中的气泡的单结晶产率。用于通过电弧放电熔化石英玻璃的碳电极的特征在于，电极材料由1.80g / cm 3以上，三点弯曲强度为35MPa以上的堆积密度的碳组成。

40. 发明授权

US4195239A Flip-flop comprising two field effect transistors controllably connected to nodes of the flip-flop and then crosswise to serve as a sense amplifier 失效
标题翻译：触发器包括可控地连接到触发器的节点然后交叉地用作读出放大器的两个场效应晶体管
公开(公告)号：US4195239A
公开(公告)日：1980-03-25
申请号：US909086
申请日：1978-05-24
申请人： Shunichi Suzuki
发明人： Shunichi Suzuki
IPC分类号： G11C11/41 , G11C11/409 , G11C11/4091 , G11C11/419 , H03K3/356 , H03K5/20 , G11C7/06 , H03K3/286 , H03K3/353
CPC分类号： H03K3/356078 , G11C11/4091 , H03K3/35606
摘要： A flip-flop usable as a sense amplifier having two insulated-gate field effect transistors that may have different threshold voltages and that have gates connected to nodes of the flip-flop, sources connected in common, and drains connected to the nodes through a first and a second control transistor rendered conductive by first clock pulses and crosswise to the gates of the other field effect transistors through a third and a fourth control transistor turned on by second clock pulses appearing in substantial coincidence with disappearance of the respective ones of the first clock pulses. Capacitive loads charged to a precharge voltage are connected to the respective nodes. A source of a first activation voltage different from the precharge voltage by a value more than the higher of the threshold voltages is connected to the transistor sources during appearance of respective ones of the first clock pulses to change the precharged levels of the respective loads to such levels that are different from the first activation voltage by the respective threshold voltages. A variation is given to the precharge level of a selected load in substantial coincidence with appearance of a selected one of the second clock pulses. A source of a second activation voltage, such as ground, different from the precharge voltage by a value more than the difference between the first activation voltage and the precharge voltage is connected to the transistor sources after appearance of the selected one of the second clock pulses. An output signal related to the variation is obtained at the node connected to the selected load.
摘要翻译：可用作具有两个绝缘栅场效应晶体管的触发器，该绝缘栅场效应晶体管可具有不同的阈值电压，并且具有连接到触发器的节点的栅极，共同连接的源极以及通过第一并且第二控制晶体管通过第一时钟脉冲导通，并且通过第三和第四控制晶体管与另一个场效应晶体管的栅极交叉，所述第三和第四控制晶体管由第二时钟脉冲导通，与第一时钟脉冲。充电到预充电电压的电容负载连接到相应的节点。在出现相应的第一时钟脉冲期间，将不同于预充电电压的第一激活电压的源连接到阈值电压的较高值的晶体管源，以将相应负载的预充电电平改变为与第一激活电压不同的各个阈值电压的电平。给定所选择的负载的预充电水平与所选择的一个第二时钟脉冲的出现大致一致的变化。与预充电电压不同的第二激活电压源，比预先充电电压和预充电电压之差大的值被连接到所述晶体管源，在出现所选择的第二时钟脉冲之后。在连接到所选择的负载的节点处获得与变化相关的输出信号。

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