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31. 发明授权

US08278657B2 Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device 有权
标题翻译：晶体管，包括晶体管的半导体器件，以及晶体管和半导体器件的制造方法
公开(公告)号：US08278657B2
公开(公告)日：2012-10-02
申请号：US12699974
申请日：2010-02-04
申请人： Junichiro Sakata , Hiromichi Godo , Takashi Shimazu
发明人： Junichiro Sakata , Hiromichi Godo , Takashi Shimazu
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/78669 , H01L29/78696
摘要： To suppress deterioration in electrical characteristics in a transistor including an oxide semiconductor layer or a semiconductor device including the transistor. In a transistor in which a channel layer is formed using an oxide semiconductor, a silicon layer is provided in contact with a surface of the oxide semiconductor layer. Further, the silicon layer is provided in contact with at least a region of the oxide semiconductor layer, in which a channel is formed, and a source electrode layer and a drain electrode layer are provided in contact with regions of the oxide semiconductor layer, over which the silicon layer is not provided.
摘要翻译：为了抑制包括氧化物半导体层的晶体管或包括晶体管的半导体器件的电特性的劣化。在其中使用氧化物半导体形成沟道层的晶体管中，提供与氧化物半导体层的表面接触的硅层。此外，硅层设置成与至少形成沟道的氧化物半导体层的区域接触，并且提供与氧化物半导体层的区域接触的源电极层和漏电极层，不提供硅层。

32. 发明授权

US08021958B2 Method for manufacturing SOI substrate and method for manufacturing semiconductor device 有权
标题翻译：制造SOI衬底的方法和半导体器件的制造方法
公开(公告)号：US08021958B2
公开(公告)日：2011-09-20
申请号：US12410654
申请日：2009-03-25
申请人： Shunpei Yamazaki , Eriko Nishida , Takashi Shimazu
发明人： Shunpei Yamazaki , Eriko Nishida , Takashi Shimazu
IPC分类号： H01L21/78
CPC分类号： H01L21/76254
摘要： A method for manufacturing an SOI substrate in which crystal defects of a single crystal semiconductor layer are reduced is provided. An oxide film containing halogen is formed on each of surfaces of a single crystal semiconductor substrate and of a semiconductor substrate provided with a single crystal semiconductor layer separated from the single crystal semiconductor substrate, whereby impurities that exist on the surfaces of and inside the substrates are decreased. In addition, the single crystal semiconductor layer provided over the semiconductor substrate is irradiated with a laser beam, whereby crystallinity of the single crystal semiconductor layer is improved and planarity is improved.
摘要翻译：提供了制造其中单晶半导体层的晶体缺陷减小的SOI衬底的方法。在单晶半导体基板的表面和设置有与单晶半导体基板分离的单晶半导体层的半导体基板的各表面上形成含有卤素的氧化物膜，由此存在于基板的表面和内部的杂质为减少。此外，用半导体衬底上的单晶半导体层照射激光束，从而提高单晶半导体层的结晶度，提高平面度。

33. 发明授权

US07618919B2 Catalyst support and method of producing the same 有权
标题翻译：催化剂载体及其制备方法
公开(公告)号：US07618919B2
公开(公告)日：2009-11-17
申请号：US11341483
申请日：2006-01-30
申请人： Takashi Shimazu , Ryusuke Tsuji , Hideo Sobukawa
发明人： Takashi Shimazu , Ryusuke Tsuji , Hideo Sobukawa
IPC分类号： B01J21/00 , B01J21/02 , B01J21/06 , B01J23/38
CPC分类号： C01B3/40 , B01J21/063 , B01J21/066 , B01J23/63 , B01J35/0013 , B01J35/1061 , B01J37/0036 , B01J37/0215 , B01J37/0225 , B01J37/0226 , B01J37/0242 , C01B2203/0233 , C01B2203/1082 , Y02P20/52
摘要： A method of producing a catalyst support comprising a substrate, and coating formed on the surface of the substrate and including powder of a first metal oxide of at least one member selected from the group consisting of alumina, zirconia, titania, iron oxides, oxides of rare earth elements, alkali metal oxides and alkali earth metal oxides, wherein the coating is obtained by heat treating the substrate after applied with a coating composition obtained by mixing the first metal oxide powder together with a fluid raw material composition containing raw material of a second metal oxide of at least one member selected from the group consisting of alumina, zirconia, titania, iron oxides, oxides of rare earth elements, alkali metal oxides and alkali earth metal oxides, at a shear rate of 1000 sec−1 or higher.
摘要翻译：一种制备催化剂载体的方法，其包含基材和形成在基材表面上的涂层，包括选自氧化铝，氧化锆，二氧化钛，氧化铁，氧化铁中的至少一种的第一金属氧化物的粉末稀土元素，碱金属氧化物和碱土金属氧化物，其中通过在将第一金属氧化物粉末与含有第二金属氧化物原料的流体原料组合物混合而获得的涂料组合物选自氧化铝，氧化锆，二氧化钛，氧化铁，稀土元素的氧化物，碱金属氧化物和碱土金属氧化物中的至少一种的金属氧化物，其剪切速率为1000秒-1以上。

34. 发明申请

US20090261449A1 METHOD FOR MANUFACTURING SOI SUBSTRATE AND SEMICONDUCTOR DEVICE 有权
标题翻译：制造SOI衬底和半导体器件的方法
公开(公告)号：US20090261449A1
公开(公告)日：2009-10-22
申请号：US12410649
申请日：2009-03-25
申请人： Shunpei Yamazaki , Eriko Nishida , Takashi Shimazu
发明人： Shunpei Yamazaki , Eriko Nishida , Takashi Shimazu
IPC分类号： H01L27/12 , H01L21/762
CPC分类号： H01L21/76254 , H01L21/84 , H01L29/458 , H01L29/66772 , H01L29/78621
摘要： An object is to provide an SOI substrate with excellent characteristics even in the case where a single crystal semiconductor substrate having crystal defects is used. Another object is to provide a semiconductor device using such an SOI substrate. A single crystal semiconductor layer is formed by an epitaxial growth method over a surface of a single crystal semiconductor substrate. The single crystal semiconductor layer is subjected to first thermal oxidation treatment to form a first oxide film. A surface of the first oxide film is irradiated with ions, whereby the ions are introduced to the single crystal semiconductor layer. The single crystal semiconductor layer and a base substrate are bonded with the first oxide film interposed therebetween. The single crystal semiconductor layer is divided at a region where the ions are introduced by performing thermal treatment, so that the single crystal semiconductor layer is partly left over the base substrate. The single crystal semiconductor layer left over the base substrate is irradiated with laser light. The single crystal semiconductor layer left over the base substrate is subjected to second thermal oxidation treatment to form a second oxide film. Then, the second oxide film is removed.
摘要翻译：目的是提供具有优异特性的SOI衬底，即使在使用具有晶体缺陷的单晶半导体衬底的情况下也是如此。另一个目的是提供一种使用这种SOI衬底的半导体器件。通过外延生长法在单晶半导体衬底的表面上形成单晶半导体层。对单晶半导体层进行第一热氧化处理以形成第一氧化物膜。用离子照射第一氧化膜的表面，由此将离子引入单晶半导体层。单晶半导体层和基底基板与第一氧化膜接合。通过进行热处理，将单晶半导体层分割在引入离子的区域，使得单晶半导体层部分残留在基底基板上。用激光照射留在基底基板上的单晶半导体层。留在基底基板上的单晶半导体层进行第二次热氧化处理，形成第二氧化膜。然后，除去第二氧化膜。

35. 发明授权

US06776809B2 Fuel reforming apparatus 失效
标题翻译：燃料重整装置
公开(公告)号：US06776809B2
公开(公告)日：2004-08-17
申请号：US09860480
申请日：2001-05-21
申请人： Takashi Shimazu
发明人： Takashi Shimazu
IPC分类号： G01B338
CPC分类号： H01M8/0631 , B01B1/005 , B01F3/022 , B01J19/2485 , B01J2219/00117 , B01J2219/00128 , B01J2219/00159 , C01B3/48 , C01B3/583 , C01B2203/0205 , C01B2203/0288 , C01B2203/044 , C01B2203/047 , C01B2203/066 , C01B2203/0844 , C01B2203/085 , C01B2203/0894 , C01B2203/1205 , C01B2203/1223 , C01B2203/1241 , C01B2203/1247 , C01B2203/1276 , C01B2203/1294 , C01B2203/1604 , C01B2203/1638 , C01B2203/82 , H01M8/0612 , Y02P20/142
摘要： A heat exchanger 32 comprises a first heat exchanger 40 for allowing heat to be exchanged between water and a reformed gas from a reforming reactor, a second heat exchanger 50 for spraying and vaporizing water in the reformed gas from the first heat exchanger 40, and a third heat exchanger 60 for vaporizing unvaporized or precipitated water. The reformed gas from the reforming reactor is cooled by the heating and vaporizing of water, and is mixed with the vaporized water and fed as mixed gas to a water gas shift reactor. The processes of cooling the reformed gas, heating and vaporizing of the water, and mixing the reformed gas and steam are completed in the heat exchanger 32, making it possible to design a smaller, simpler, and more efficient apparatus.
摘要翻译：热交换器32包括第一热交换器40，用于允许热量与来自重整反应器的重整气体之间的热交换;第二热交换器50，其用于喷射和蒸发来自第一热交换器40的重整气体中的水，用于蒸发未蒸发或沉淀的水的第三热交换器60。来自重整反应器的重整气体通过水的加热和蒸发而被冷却，并与蒸发的水混合并作为混合气体进料至水煤气变换反应器。在热交换器32中完成冷却重整气体，水的加热和蒸发以及混合重整气体和蒸汽的过程，使得可以设计更小，更简单和更有效的装置。

36. 发明授权

US5706915A Brake disc rotor 失效
标题翻译：制动盘转子
公开(公告)号：US5706915A
公开(公告)日：1998-01-13
申请号：US715491
申请日：1996-09-18
申请人： Takashi Shimazu , Haruo Katagiri , Shigeru Sakamoto , Hidetoshi Shimizu
发明人： Takashi Shimazu , Haruo Katagiri , Shigeru Sakamoto , Hidetoshi Shimizu
IPC分类号： F16D55/00 , F16D55/22 , F16D65/12
CPC分类号： F16D55/22 , F16D65/128 , F16D2055/0037
摘要： A brake disc rotor includes: a pair of disc-shaped sliding plates provided in parallel with and separately from each other in the axle direction; a plurality of partition walls radially provided between the sliding plates; a plurality of passages radially formed between the plurality of partition walls; a plurality of inlet and outlet openings communicating with the plurality of passages and opening inward and in the radially outward direction; and an inclined portion formed on the surface of the inside sliding plate opposed to the outside sliding plate such that a distance between the inside and outside sliding plates is gradually decreased in the radially outward direction.
摘要翻译：制动盘转子包括：一对在轴向平行且彼此分开设置的盘形滑板; 径向设置在所述滑板之间的多个分隔壁; 在所述多个分隔壁之间径向形成的多个通道; 多个入口和出口与所述多个通道连通并且向内和径向向外的方向开口; 以及形成在与所述外侧滑动板相对的所述内侧滑动板的表面上的倾斜部，使得所述内侧滑动板和所述外侧滑动板之间的距离在径向向外的方向上逐渐减小。

37. 发明授权

US4876160A Organic composite-plated steel sheet 失效
标题翻译：有机复合镀钢板
公开(公告)号：US4876160A
公开(公告)日：1989-10-24
申请号：US213070
申请日：1988-06-29
申请人： Yoshio Shindou , Motoo Kabeya , Takashi Shimazu , Fumio Yamazaki
发明人： Yoshio Shindou , Motoo Kabeya , Takashi Shimazu , Fumio Yamazaki
IPC分类号： B32B15/08 , B05D7/00 , B05D7/14 , C08G18/58 , C09D175/04 , C25D11/38
CPC分类号： B05D7/51 , C08G18/58 , C09D175/04 , C25D11/38 , C08G2150/90 , Y10S428/935 , Y10T428/12549 , Y10T428/12569 , Y10T428/12611 , Y10T428/12757 , Y10T428/12799
摘要： Disclosed is a steel sheet having an organic composite plating layer excellent in press workability, spot weldability, electrodeposition coatability and corrosion resistance which comprises a zinc plated, aluminum plated or zinc base composite alloy plated steel sheet, a first layer of an insoluble chromate film of 5% or less in the content of water-soluble matter formed on the surface of the steel sheet at a coverage of 10-150 mg/m.sup.2 in terms of chromium content and a second layer of a coating composition having the following composition coated at a thickness of 0.3-5 .mu.m as a solid film on said first layer:(A) a bisphenol type epoxy resin having a number-average molecular weight of 300-100,000 in an amount of 30% by weight or more of solid matter in the coating composition,(B) at least one curing agent selected from the group consisting of a polyisocyanate compound and a block polyisocyanate compound at a weight ratio to solid matter in the epoxy resin of 1/10 -20/10,(C) fumed silica having an average particle size of 0.1-100 in an amount of 5-50% by weight of solid matter in the coating composition, and(D) a ketone organic solvent in an amount of 40% by weight or more of the coating composition, andthe solid content of the coating composition being 10-50% by weight.

38. 发明授权

US08492756B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08492756B2
公开(公告)日：2013-07-23
申请号：US12683695
申请日：2010-01-07
申请人： Junichiro Sakata , Takashi Shimazu , Hiroki Ohara , Toshinari Sasaki , Shunpei Yamazaki
发明人： Junichiro Sakata , Takashi Shimazu , Hiroki Ohara , Toshinari Sasaki , Shunpei Yamazaki
IPC分类号： H01L29/24 , H01L29/22 , H01L21/34
CPC分类号： H01L29/16 , H01L21/02554 , H01L21/02565 , H01L27/1225 , H01L29/78618 , H01L29/7869
摘要： An object is to provide a semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics. An oxide semiconductor layer including SiOx is used in a channel formation region, and in order to reduce contact resistance with source and drain electrode layers formed using a metal material with low electric resistance, source and drain regions are provided between the source and drain electrode layers and the oxide semiconductor layer including SiOx. The source and drain regions are formed using an oxide semiconductor layer which does not include SiOx or an oxynitride film.
摘要翻译：本发明的目的是提供一种包括具有氧化物半导体层并具有高电特性的薄膜晶体管的半导体器件。在沟道形成区域中使用包含SiO x的氧化物半导体层，为了降低与使用具有低电阻的金属材料形成的源极和漏极电极层的接触电阻，源极和漏极电极层之间提供源极和漏极区域和包含SiOx的氧化物半导体层。源极和漏极区域使用不包括SiO x或氮氧化物膜的氧化物半导体层形成。

39. 发明申请

US20130059191A1 BATTERY TEMPERATURE ADJUSTMENT DEVICE 有权
标题翻译：电池温度调节装置
公开(公告)号：US20130059191A1
公开(公告)日：2013-03-07
申请号：US13696402
申请日：2011-05-12
申请人： Yasuki Hirota , Shuji Tomura , Takaji Umeno , Takashi Shimazu , Takashi Murata
发明人： Yasuki Hirota , Shuji Tomura , Takaji Umeno , Takashi Shimazu , Takashi Murata
IPC分类号： H01M10/50
CPC分类号： H01M10/613 , H01M2/024 , H01M10/0525 , H01M10/615 , H01M10/625 , H01M10/63 , H01M10/633 , H01M10/6556 , H01M10/6569 , Y02T10/7011
摘要： A structure for effectively heating a battery. A battery is housed in a battery container. A condenser is formed such that a heating medium is in direct contact with a surface of the battery container, and condenses the heating medium to heat the battery via the battery container. The heating medium condensed by the condenser is supplied to an evaporator that heats and vaporizes the heating medium. The heating medium vaporized by the evaporator which is in vapor is circulated to the condenser.
摘要翻译：一种有效加热电池的结构。电池容纳在电池容器中。冷凝器形成为使得加热介质与电池容器的表面直接接触，并且冷凝加热介质以经由电池容器加热电池。将由冷凝器冷凝的加热介质供给到加热和蒸发加热介质的蒸发器。由蒸发器蒸发的蒸气中的加热介质循环到冷凝器。

40. 发明申请

US20120325650A1 SPUTTERING TARGET, METHOD FOR MANUFACTURING SPUTTERING TARGET, AND METHOD FOR FORMING THIN FILM 审中-公开
公开(公告)号：US20120325650A1
公开(公告)日：2012-12-27
申请号：US13603502
申请日：2012-09-05
申请人： Shunpei Yamazaki , Tetsunori Maruyama , Yuki Imoto , Hitomi Sato , Masahiro Watanabe , Mitsuo Mashiyama , Kenichi Okazaki , Motoki Nakashima , Takashi Shimazu
发明人： Shunpei Yamazaki , Tetsunori Maruyama , Yuki Imoto , Hitomi Sato , Masahiro Watanabe , Mitsuo Mashiyama , Kenichi Okazaki , Motoki Nakashima , Takashi Shimazu
IPC分类号： C23C14/08 , C23C14/34
CPC分类号： C23C14/08 , B28B11/243 , C04B35/453 , C04B35/64 , C04B2235/3284 , C04B2235/3286 , C04B2235/76 , C23C14/086 , C23C14/3414 , C23C14/345 , H01L21/02565 , H01L21/02631 , H01L29/24 , H01L29/66969 , H01L29/7869
摘要： There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

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