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31. 发明授权

US5825789A Process for producing a resonator in a semiconductor laser device 失效
标题翻译：在半导体激光装置中制造谐振器的方法
公开(公告)号：US5825789A
公开(公告)日：1998-10-20
申请号：US577620
申请日：1995-12-22
申请人： Yoshiaki Watanabe , Satoshi Miyaguchi , Hiroshi Amano , Isamu Akasaki
发明人： Yoshiaki Watanabe , Satoshi Miyaguchi , Hiroshi Amano , Isamu Akasaki
IPC分类号： H01S5/00 , H01S5/02 , H01S5/028 , H01S5/10 , H01S5/323 , H01S3/10 , H01S3/083
CPC分类号： H01S5/0201 , H01S5/028
摘要： A method for forming a resonator in a semiconductor laser device comprises the steps of; filling with a resin a gap surrounding the side surfaces of the waveguide for a resonator other than the end-surface to be polished; polishing the end-surface and the resin surrounding it; forming a predetermined optical coating on the polished end-surface and the resin in the state of the laser waveguide and the electrode being embedded; and removing the embedding resin. Both the bending of polished end-surfaces and the entering of the thin film into the side surface of the laser waveguide is prevented so that a high smooth end-surface of mirror coating for resonator is achieved. Furthermore, any crystals are used for a substrate carrying a semiconductor laser structure with a resonator even if that crystal is of non-cleavage, according to that method.
摘要翻译：一种在半导体激光器件中形成谐振器的方法包括以下步骤：用树脂填充围绕波导的侧表面的间隙，用于除了待抛光的端面之外的谐振器; 抛光端面和周围的树脂; 在激光波导和电极嵌入的状态下在抛光的端面上形成预定的光学涂层和树脂; 并除去嵌入树脂。抛光端面的弯曲和薄膜进入激光波导的侧表面均被防止，从而实现了用于谐振器的镜面涂层的高光滑端面。此外，根据该方法，任何晶体都用于携带具有谐振器的半导体激光器结构的衬底，即使该晶体是非分裂的。

32. 发明授权

US5745823A Process cartridge and image forming apparatus usable with this process cartridge 失效
标题翻译：可与该处理盒一起使用的处理盒和图像形成装置
公开(公告)号：US5745823A
公开(公告)日：1998-04-28
申请号：US905552
申请日：1992-06-25
申请人： Shinji Goto , Jun Saito , Hiroyuki Ishii , Masao Ando , Yoshiaki Watanabe , Yuzo Isoda , Masahide Tanoue , Ryukichi Inoue
发明人： Shinji Goto , Jun Saito , Hiroyuki Ishii , Masao Ando , Yoshiaki Watanabe , Yuzo Isoda , Masahide Tanoue , Ryukichi Inoue
IPC分类号： G03G21/16 , G03G15/00 , G03G21/00 , G03G21/10 , G03G21/18
CPC分类号： G03G21/1853 , G03G21/1647 , G03G2221/1654 , G03G2221/183 , G03G2221/1884
摘要： An image forming apparatus, to which a process cartridge is detachably mountable, for forming an image on a recording material. The image forming apparatus includes a first guiding device for guiding the process cartridge toward a predetermined mounting position when the process cartridge is mounted to the image forming apparatus. The first guiding device is disposed upstream of the predetermined mounting position with respect to a mounting movement direction of the process cartridge. A second guiding device is provided for guiding the process cartridge toward the predetermined mounting position when the process cartridge is mounted to the image forming apparatus The second guiding device is disposed (i) closer to the predetermined position than the first guiding device, and (ii) downstream of the first guiding device with respect to the mounting movement direction. Also provided is a feeding device for feeding the recording material.
摘要翻译：图像形成装置，处理盒可拆卸地安装在该成像装置上，用于在记录材料上形成图像。图像形成装置包括第一引导装置，用于当处理盒安装到图像形成装置时将处理盒朝向预定的安装位置引导。第一引导装置相对于处理盒的安装移动方向设置在预定安装位置的上游。第二引导装置被设置用于当处理盒安装到图像形成装置时将处理盒引向预定的安装位置。第二引导装置设置成（i）比第一引导装置更靠近预定位置，和（ii ）相对于安装移动方向在第一引导装置的下游。还提供了用于馈送记录材料的进给装置。

33. 发明授权

US5734949A Process cartridge and image forming apparatus usable with this process cartridge 失效
标题翻译：可与该处理盒一起使用的处理盒和图像形成装置
公开(公告)号：US5734949A
公开(公告)日：1998-03-31
申请号：US754630
申请日：1996-11-21
申请人： Shinji Goto , Jun Saito , Hiroyuki Ishii , Masao Ando , Yoshiaki Watanabe , Yuzo Isoda , Masahide Tanoue , Ryukichi Inoue
发明人： Shinji Goto , Jun Saito , Hiroyuki Ishii , Masao Ando , Yoshiaki Watanabe , Yuzo Isoda , Masahide Tanoue , Ryukichi Inoue
IPC分类号： G03G21/16 , G03G15/00 , G03G21/00 , G03G21/10 , G03G21/18
CPC分类号： G03G21/1853 , G03G21/1647 , G03G2221/1654 , G03G2221/183 , G03G2221/1884
摘要： A process cartridge is detachably mountable to an image forming apparatus for forming an image on a recording material. The process cartridge includes an image bearing member, a process device for acting on the image bearing member, which includes a developing device for developing an image on the image bearing member, a frame, and a projection disposed on the upper surface of the frame and extending toward the developing device, the projection having (i) an upward inclined surface, (ii) a flat surface continuing from the upper inclined surface, and (iii) a downward inclined surface that is inclined toward the developing device.
摘要翻译：处理盒可拆卸地安装到用于在记录材料上形成图像的图像形成装置。处理盒包括图像承载部件，用于作用在图像承载部件上的处理装置，其包括用于在图像承载部件上显影图像的显影装置，框架和设置在框架的上表面上的突起，以及朝向显影装置延伸，所述突起具有（i）向上倾斜表面，（ii）从所述上倾斜表面延续的平坦表面，以及（iii）向所述显影装置倾斜的向下倾斜表面。

34. 发明授权

US5393961A Air cooling fan arrangement in a microwave heating device 失效
标题翻译：空气冷却风扇布置在微波加热装置中
公开(公告)号：US5393961A
公开(公告)日：1995-02-28
申请号：US069519
申请日：1993-06-01
申请人： Yasuhiro Umekage , Shinichi Sakai , Yoshiaki Watanabe , Hisashi Morikawa , Makoto Mihara
发明人： Yasuhiro Umekage , Shinichi Sakai , Yoshiaki Watanabe , Hisashi Morikawa , Makoto Mihara
IPC分类号： H05B6/80 , H05B6/64
CPC分类号： H05B6/642
摘要： In a microwave heating device, a propeller fan is mounted on a drive shaft of a motor that in vertically positioned parts of a high frequency power supply unit are arranged in the order of a power control semiconductor device and a high-voltage transformer along the direction of revolution of the propeller fan. The motor is secured to a support member formed by a motor cover attached to the casing of the propeller fan. The fan and high frequency power supply unit are mounted to a first frame and a second frame, both of which are bent and connected at a connecting portion and fixed in an approximately "L" shape, while an airflow path is defined by a first guide wall and a second guide wall to cool the parts of the high frequency power supply unit. An airflow path is formed by a plurality of guide walls provided on the two frames, and a communicating hole is provided in proximity to the connecting portion of the two frames. The propeller fan is so arranged as to revolve at a low r.p.m. after stopping the microwave heating.
摘要翻译：在微波加热装置中，螺旋桨式风扇安装在电动机的驱动轴上，在高频电源单元的垂直定位部分沿着方向以功率控制半导体器件和高压变压器的顺序排列的螺旋桨风扇革命。马达被固定到由附接到螺旋桨式风扇的壳体的马达盖形成的支撑构件。风扇和高频电源单元安装在第一框架和第二框架上，第一框架和第二框架都被弯曲并连接在连接部分并固定成大致“L”形，同时气流路径由第一导向件壁和第二引导壁以冷却高频电源单元的部件。由设置在两个框架上的多个引导壁形成气流路径，并且在两个框架的连接部分附近设置有连通孔。螺旋桨风扇布置成以低r.p.m旋转。停止微波加热后。

35. 发明授权

US5097164A Hermetically sealed type dynamic pressure fluid bearing motor 失效
标题翻译：气密式动压流体轴承电机
公开(公告)号：US5097164A
公开(公告)日：1992-03-17
申请号：US458549
申请日：1989-12-28
申请人： Mikio Nakasugi , Yoshiaki Watanabe , Yoshihiko Hirose
发明人： Mikio Nakasugi , Yoshiaki Watanabe , Yoshihiko Hirose
IPC分类号： F16C33/10 , H02K5/10 , H02K5/16 , H02K29/08
CPC分类号： F16C33/10 , H02K29/08 , H02K5/10 , H02K5/1677
摘要： A motor supported by a dynamic pressure fluid bearing supporting a rotatable member by the dynamic pressure of fluid created by rotation is hermetically sealed with respect to the outside. The motor further includes a fixed shaft with the grooves and a rotatable sleeve. The rotatable sleeve is engageable with the fixed shaft and an optical member are mounted on the rotatable shaft.
摘要翻译：由通过由旋转产生的流体的动态压力支撑可旋转构件的动态压力流体轴承支撑的电动机相对于外部气密地密封。马达还包括具有凹槽的固定轴和可旋转的套筒。可旋转套筒可与固定轴接合，光学构件安装在旋转轴上。

36. 发明授权

US5087868A Rotary actuator 失效
标题翻译：旋转执行器
公开(公告)号：US5087868A
公开(公告)日：1992-02-11
申请号：US563866
申请日：1990-08-07
申请人： Takehisa Ishibashi , Shinobu Kakizaki , Yoshiaki Watanabe , Fukashi Kanai
发明人： Takehisa Ishibashi , Shinobu Kakizaki , Yoshiaki Watanabe , Fukashi Kanai
IPC分类号： B60G17/015 , F16F9/46
CPC分类号： F16F9/462 , B60G17/0152
摘要： A rotary actuator is designed for rotatingly drive a rotary body, such as a rotary valve member for adjusting damping force to be created by a variable damping force shock absorber. The rotary actuator takes a layout of a permanent magnet and an electromagnet arranged in vertically spaced relationship. Vertical layout of the permanent magnet and the electromagnet reduces plane area required for installation.

37. 发明授权

US5071779A Method for producing a silicon thin film transistor 失效
标题翻译：生产硅薄膜晶体管的方法
公开(公告)号：US5071779A
公开(公告)日：1991-12-10
申请号：US494037
申请日：1990-03-15
申请人： Sakae Tanaka , Yoshiaki Watanabe , Katsuo Shirai , Yoshihisa Ogiwara
发明人： Sakae Tanaka , Yoshiaki Watanabe , Katsuo Shirai , Yoshihisa Ogiwara
IPC分类号： H01L21/336 , H01L29/786
CPC分类号： H01L29/66765 , H01L29/78618 , H01L29/78621 , H01L29/78624 , H01L29/7866 , H01L29/78669
摘要： A silicon thin film transistor array includes a plurality of silicon thin film transistors in an array-like form, each silicon thin film transistor including an insulating substrate, a gate electrode formed on the insulating substrate, a gate insulating layer formed on the insulating substrate containing the gate electrode, a pair of first impurity contained silicon layers formed on the gate insulating layer in such a manner as to transversely cross a terminal part of the gate electrode, an intrinsic silicon layer formed on the pair of first impurity contained silicon layers and on the gate insulating layer between the pair of first impurity contained silicon layers in such a manner as to connect the pair of first impurity contained silicon layers, a protective insulation layer formed on the intrinsic silicon layer, and a source electrode and a drain electrode formed at contact parts of the pair of first impurity contained silicon layers; gate wiring for connecting the gate electrodes of the silicon thin film transistors to each other; and source wiring for connecting the source electrodes of the silicon thin film transistors to each other.

38. 发明授权

US5045485A Method for producing amorphous silicon thin film transistor array substrate 失效
标题翻译：非晶硅薄膜晶体管阵列基板的制造方法
公开(公告)号：US5045485A
公开(公告)日：1991-09-03
申请号：US383119
申请日：1989-07-19
申请人： Sakae Tanaka , Yoshiaki Watanabe
发明人： Sakae Tanaka , Yoshiaki Watanabe
IPC分类号： H01L21/77 , H01L21/84
CPC分类号： H01L27/1214
摘要： A method for producing an amorphous silicon thin film transistor array substrate comprising successively coating a gate insulating layer, an amorphous silicon layer and a protective insulating layer on a glass substrate provided with a gate electrode and a gate wiring having a predetermined shape, in such a manner as to not cover the connecting terminal region of the gate wiring. A protective insulating layer is patterned into a predetermined shape. After passing through a predetermined production process to produce an amorphous silicon thin film transistor array, at least a gate wiring and a source wiring are provided. The step of patterning the protective insulating layer comprises covering the connecting terminals of the gate wiring and the exposed region of the glass substrate with a photoresist.

39. 发明授权

US5021850A Silicon thin film transistor 失效
标题翻译：硅薄膜晶体管
公开(公告)号：US5021850A
公开(公告)日：1991-06-04
申请号：US377873
申请日：1989-07-10
申请人： Sakae Tanaka , Yoshiaki Watanabe , Katsuo Shirai , Yoshihisa Ogiwara
发明人： Sakae Tanaka , Yoshiaki Watanabe , Katsuo Shirai , Yoshihisa Ogiwara
IPC分类号： H01L21/336 , H01L29/786
CPC分类号： H01L29/66765 , H01L29/78618 , H01L29/78621 , H01L29/78624 , H01L29/7866 , H01L29/78669
摘要： A silicon thin film transistor array includes a plurality of silicon thin film transistors in an array-like form, each silicon thin film transistor including an insulating substrate, a gate electrode formed on the insulating substrate, a gate insulating layer formed on the insulating substrate containing the gate electrode, a pair of first impurity contained silicon layers formed on the gate insulating layer in such a manner as to transversely cross a terminal part of the gate electrode, an intrinsic silicon layer formed on the pair of first impurity contained silicon layers and on the gate insulating layer between the pair of first impurity contained silicon layers in such a manner as to connect the pair of first impurity contained silicon layers, a protective insulation layer formed on the intrinsic silicon layer, and a source electrode and a drain electrode formed at contact parts of the pair of first impurity contained silicon layers; gate wiring for connecting the gate electrodes of the silicon thin film transistors to each other; and source wiring for connecting the source electrodes of the silicon thin film transistors to each other.
摘要翻译：硅薄膜晶体管阵列包括阵列状形式的多个硅薄膜晶体管，每个硅薄膜晶体管包括绝缘基板，形成在绝缘基板上的栅电极，形成在绝缘基板上的栅绝缘层，栅电极，一对第一杂质含有在栅极绝缘层上形成的跨越栅电极的端部的硅层，形成在一对第一杂质上的本征硅层含有硅层和在一对第一杂质之间的栅极绝缘层包含硅层，以便连接一对第一杂质含硅层，形成在本征硅层上的保护绝缘层，以及形成在源极电极和漏电极该对第一杂质的接触部分含有硅层; 用于将硅薄膜晶体管的栅电极彼此连接的栅极布线; 以及用于将硅薄膜晶体管的源电极彼此连接的源极布线。

40. 发明授权

US5018880A Dynamic pressure bearing device 失效
标题翻译：动压轴承装置
公开(公告)号：US5018880A
公开(公告)日：1991-05-28
申请号：US372613
申请日：1989-06-28
申请人： Mikio Nakasugi , Yoshiaki Watanabe
发明人： Mikio Nakasugi , Yoshiaki Watanabe
IPC分类号： F16C33/10
CPC分类号： F16C33/107 , F16C17/107
摘要： A dynamic pressure bearing device a relatively rotatable shaft member and sleeve member, accommodating the shaft member, are relatively supported with respect to a thrust direction and a radial direction, and wherein there is provided a circulation passageway for circulating a fluid along at least a part of a thrust surface between the shaft member and the sleeve member.
摘要翻译：容纳轴构件的相对旋转的轴构件和套筒构件的动态压力承载装置相对于推力方向和径向相对地相对地支撑，并且其中设置有循环通道，用于沿至少一部分循环流体在轴构件和套筒构件之间的推力表面。

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