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31. 发明授权

US07002851B2 Storage device employing a flash memory 失效
公开(公告)号：US07002851B2
公开(公告)日：2006-02-21
申请号：US11085508
申请日：2005-03-22
申请人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
发明人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
IPC分类号： G11C7/00
CPC分类号： G11C29/765 , G06F3/0601 , G06F3/0616 , G06F3/0619 , G06F3/064 , G06F3/0659 , G06F3/0679 , G06F12/0246 , G06F2003/0694 , G06F2212/2022 , G11C16/102 , G11C16/349
摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.

32. 发明申请

US20050289389A1 Storage device employing a flash memory 有权
公开(公告)号：US20050289389A1
公开(公告)日：2005-12-29
申请号：US11167187
申请日：2005-06-28
申请人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
发明人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
IPC分类号： G06F3/06 , G06F12/02 , G11C16/10 , G11C29/00 , G06F11/00 , G06F12/00
CPC分类号： G11C29/765 , G06F3/0601 , G06F3/0616 , G06F3/0619 , G06F3/064 , G06F3/0659 , G06F3/0679 , G06F12/0246 , G06F2003/0694 , G06F2212/2022 , G11C16/102 , G11C16/349
摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.

33. 发明授权

US06972979B2 Nonvolatile memory 有权
公开(公告)号：US06972979B2
公开(公告)日：2005-12-06
申请号：US10716504
申请日：2003-11-20
申请人： Tetsuya Iida , Motoki Kanamori , Atsushi Shikata , Takayuki Tamura , Kunihiro Katayama
发明人： Tetsuya Iida , Motoki Kanamori , Atsushi Shikata , Takayuki Tamura , Kunihiro Katayama
IPC分类号： G06K19/077 , G06K19/06 , G06K19/07 , G11C5/02 , G11C7/00 , G11C16/04 , G11C16/06
CPC分类号： G06K19/07732 , G06K19/07
摘要： There is provided a technology to realize high speed data transfer while compatibility of a card type storage device comprising a nonvolatile memory is ensured. Namely, in the card type storage device comprising the nonvolatile memory, a plurality of data terminals are provided and an interface unit is provided with a circuit for determining levels of data terminals. Some or all of the plurality of data terminals are connected with pull-up resistors for pulling up to a power source voltage. When the determination circuit determines that the data terminals connected with the pull-up resistors are in an open condition, the determination circuit switches a bus width (number of bits) of data.

34. 发明申请

US20050259465A1 Nonvolatile memory apparatus 审中-公开
标题翻译：非易失存储器
公开(公告)号：US20050259465A1
公开(公告)日：2005-11-24
申请号：US11128289
申请日：2005-05-13
申请人： Satoshi Yoshida , Kunihiro Katayama , Shinsuke Asari
发明人： Satoshi Yoshida , Kunihiro Katayama , Shinsuke Asari
IPC分类号： G06F21/24 , G06F12/00 , G06F12/14 , G06K19/073 , G09C1/00 , G11C16/04 , G11C29/00
CPC分类号： G06F12/1408 , G11C29/78
摘要： In technology for enabling the replacement of part of an operating program of a controller by a modified program on a nonvolatile memory, the present invention prevents tampering and leak of storage information within the nonvolatile memory and the controller. At power-on reset, an encrypted alternative program, if present, is transferred from a nonvolatile memory to a volatile memory, and decrypted when actually executed. A long wait is not required until data processing by a data processor is enabled after the exit from the reset processing. Since the alternative program once decrypted is held in the volatile memory so as to be reusable, it does not need to be decrypted each time it is executed. Since the alternative program is encrypted, even if the nonvolatile memory is physically separated from the controller to illegally dump the alternative program, it is difficult to analyze the data.
摘要翻译：本发明在非易失性存储器中通过修改程序使控制器的一部分操作程序更换的技术中，防止非易失性存储器和控制器内存储信息的篡改和泄露。在上电复位时，加密的替代程序（如果存在）从非易失性存储器传输到易失性存储器，并在实际执行时进行解密。在复位处理退出后，数据处理器的数据处理才能进行长时间的等待。由于一旦解密的替代程序被保存在易失性存储器中以便可重用，因此在每次执行时不需要被解密。由于替代程序被加密，即使非易失性存储器在物理上与控制器分离以非法地转储替代程序，因此难以分析数据。

35. 发明申请

US20050211786A1 Nonvolatile memory 审中-公开
标题翻译：非易失性存储器
公开(公告)号：US20050211786A1
公开(公告)日：2005-09-29
申请号：US11131292
申请日：2005-05-18
申请人： Tetsuya Iida , Motoki Kanamori , Atsushi Shikata , Takayuki Tamura , Kunihiro Katayama
发明人： Tetsuya Iida , Motoki Kanamori , Atsushi Shikata , Takayuki Tamura , Kunihiro Katayama
IPC分类号： G06K19/077 , G06K19/06 , G06K19/07 , G11C5/02 , G11C7/00 , G11C16/04 , G11C16/06
CPC分类号： G06K19/07732 , G06K19/07
摘要： There is provided a technology to realize high speed data transfer while compatibility of a card type storage device comprising a nonvolatile memory is ensured. Namely, in the card type storage device comprising the nonvolatile memory, a plurality of data terminals are provided and an interface unit is provided with a circuit for determining levels of data terminals. Some or all of the plurality of data terminals are connected with pull-up resistors for pulling up to a power source voltage. When the determination circuit determines that the data terminals connected with the pull-up resistors are in an open condition, the determination circuit switches a bus width (number of bits) of data.
摘要翻译：提供了一种实现高速数据传输的技术，同时确保包括非易失性存储器的卡式存储装置的兼容性。也就是说，在包括非易失性存储器的卡型存储装置中，提供多个数据终端，并且接口单元设置有用于确定数据终端电平的电路。多个数据端子中的一些或全部与上拉电阻相连以提升电源电压。当确定电路确定与上拉电阻器连接的数据端子处于打开状态时，确定电路切换数据的总线宽度（位数）。

36. 发明授权

US06608784B2 Non-volatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US06608784B2
公开(公告)日：2003-08-19
申请号：US10078471
申请日：2002-02-21
申请人： Motoki Kanamori , Kunihiro Katayama , Atsushi Shiraishi , Shigeo Kurakata , Atsushi Shikata
发明人： Motoki Kanamori , Kunihiro Katayama , Atsushi Shiraishi , Shigeo Kurakata , Atsushi Shikata
IPC分类号： G11C1606
CPC分类号： G11C29/76 , G06F11/1068 , G11C16/04 , G11C16/3431 , G11C29/765 , G11C29/81 , G11C29/82 , G11C2029/0411
摘要： When a non-volatile memory write error occurs in a card storage device containing a non-volatile memory and an error correction circuit, write data is read from the non-volatile memory and a check is made if the error can be corrected by the error correction circuit. If the error can be corrected, the write operation is ended. If the error correction circuit cannot correct the error, substitute processing is performed to write data into some other area.
摘要翻译：当在包含非易失性存储器和纠错电路的卡存储装置中发生非易失性存储器写入错误时，从非易失性存储器读取写入数据，并且检查错误是否可以通过错误来校正校正电路。如果可以纠正错误，则写入操作结束。如果纠错电路无法纠正错误，则执行替代处理以将数据写入其他区域。

37. 发明授权

US06549460B2 Memory device and memory card 有权
公开(公告)号：US06549460B2
公开(公告)日：2003-04-15
申请号：US10012525
申请日：2001-12-12
申请人： Atsushi Nozoe , Kazuo Nakamura , Kunihiro Katayama
发明人： Atsushi Nozoe , Kazuo Nakamura , Kunihiro Katayama
IPC分类号： G11C1606
CPC分类号： G06F11/1068
摘要： A nonvolatile memory device having an error correcting function, capable of outputting read-out data (uncorrected) while simultaneously generating syndromes. After the syndrome formation, the memory device outputs an error status signal (ERR) and, depending on the presence or absence of an externally supplied request (SC), again outputs read-out data (this time corrected).

38. 发明授权

US06341085B1 Storage device employing a flash memory 有权
标题翻译：采用闪存的存储设备
公开(公告)号：US06341085B1
公开(公告)日：2002-01-22
申请号：US09660648
申请日：2000-09-12
申请人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
发明人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
IPC分类号： G11C700
CPC分类号： G11C29/765 , G06F3/0601 , G06F3/0616 , G06F3/0659 , G06F3/0664 , G06F3/0679 , G06F2003/0694 , G06F2212/2022 , G11C16/102
摘要： In a semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium; a semiconductor disk comprising a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be prolonged.
摘要翻译：在其中以块为单位重写数据的闪存的半导体盘被用作存储介质; 包括存储文件数据的数据存储器的半导体盘，代替数据存储器中的错误块的替代存储器，存储有数据存储器的错误信息的错误存储器以及读出数据的存储器控制器将数据写入数据存储器，替代存储器和错误存储器中并将其擦除。由于可以补救闪速存储器的写入错误，所以可以延长半导体盘的使用寿命。

39. 发明授权

US06275436B1 Flash memory control method and apparatus processing system therewith 有权
公开(公告)号：US06275436B1
公开(公告)日：2001-08-14
申请号：US09577371
申请日：2000-05-23
申请人： Tsunehiro Tobita , Jun Kitahara , Takashi Tsunehiro , Kunihiro Katayama , Ryuichi Hattori , Yukihiro Seki , Hajime Yamagami , Takashi Totsuka , Takeshi Wada , Yosio Takaya , Manabu Saito , Kenichi Kaki , Takao Okubo , Takashi Kikuchi , Masamichi Kishi , Takeshi Suzuki , Shigeru Kadowaki
发明人： Tsunehiro Tobita , Jun Kitahara , Takashi Tsunehiro , Kunihiro Katayama , Ryuichi Hattori , Yukihiro Seki , Hajime Yamagami , Takashi Totsuka , Takeshi Wada , Yosio Takaya , Manabu Saito , Kenichi Kaki , Takao Okubo , Takashi Kikuchi , Masamichi Kishi , Takeshi Suzuki , Shigeru Kadowaki
IPC分类号： G11C800
CPC分类号： G11C29/765 , G06F3/0601 , G06F3/0613 , G06F3/0616 , G06F3/064 , G06F3/0644 , G06F3/0656 , G06F3/0679 , G06F3/068 , G06F11/1433 , G06F11/1441 , G06F12/08 , G06F12/0802 , G06F12/0866 , G06F2003/0694 , G06F2212/2022 , G06F2212/312 , G11C29/789 , G11C29/82
摘要： A control method and system when a flash memory is used. as a semiconductor disk or a main memory in an information processing system. A semiconductor file system comprises a first nonvolatile memory electrically erasable, a second nonvolatile memory not electrically erasable, a volatile memory, a controller which controls the memories, and a control section which controls the controller wherein a physical address corresponding to a logical address specified from an external system is accessed. The first nonvolatile memory stores data for the external system to perform operations, first management information indicating the correspondence between physical addresses at which the data is stored and logical addresses, and second management information indicating a state of the first nonvolatile memory. The second nonvolatile memory previously stores interface information required for inputting and outputting the data from and to the external system and read-only data of the data. The controller comprises control means for determining a physical sector address forming predetermined high-order bits of the physical address when data is output from the first nonvolatile memory or when data is input to the volatile memory, means for storing the determined physical sector address, and means for consecutively generating addresses in a sector determined by the physical sector address. The control section is responsive to the interface information, the first management information, and the second management information for controlling input/output of data from/to the external system and for temporarily storing write data into the first nonvolatile memory from the external system in the volatile memory and then transferring the write data from the volatile memory to the first nonvolatile memory. The consecutive address generation means and the sector address storage means output the physical sector address and the consecutively generated addresses to the first nonvolatile memory and the volatile memory when data at the physical sector address is output from the first nonvolatile memory or when data at the physical sector address is input to the volatile memory.

40. 发明授权

US5243269A Battery power supply system 失效
标题翻译：电池供电系统
公开(公告)号：US5243269A
公开(公告)日：1993-09-07
申请号：US797023
申请日：1991-11-25
申请人： Kunihiro Katayama , Kenichi Kaki , Takashi Tsunehiro
发明人： Kunihiro Katayama , Kenichi Kaki , Takashi Tsunehiro
IPC分类号： G06F1/26 , H02J1/10 , H02J7/00 , H02J9/06
CPC分类号： H02J7/0024 , H02J1/10 , H02J9/061 , Y10T307/625
摘要： A battery power supply system for supplying DC electric power to a DC operated apparatus includes an AC/DC adapter for converting AC electric power into DC electric power, a plurality of batteries and a battery charger for charging the plurality of batteries. The battery power supply system includes a plurality of charge lines for connecting the battery charger to the plurality of batteries and a plurality of discharge lines connected to outputs of the plurality of batteries. Switches are provided in each of the plurality of charge lines and discharge lines.
摘要翻译：用于向DC操作的装置提供直流电的电池电源系统包括用于将AC电力转换为DC电力的AC / DC适配器，多个电池和用于对多个电池充电的电池充电器。电池电源系统包括用于将电池充电器连接到多个电池的多个充电线和连接到多个电池的输出的多个放电线。开关设置在多个充电线和放电线中的每一个中。

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