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31. 发明申请

US20090120354A1 CRYSTAL GROWTH METHOD, CRYSTAL GROWTH APPARATUS, GROUP-III NITRIDE CRYSTAL AND GROUP-III NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：晶体生长方法，晶体生长装置，III族氮化物晶体和III族氮化物半导体器件
公开(公告)号：US20090120354A1
公开(公告)日：2009-05-14
申请号：US12353608
申请日：2009-01-14
申请人： Seiji Sarayama , Hisanori Yamane , Masahiko Shimada , Masafumi Kumano , Hirokazu Iwata , Takashi Araki
发明人： Seiji Sarayama , Hisanori Yamane , Masahiko Shimada , Masafumi Kumano , Hirokazu Iwata , Takashi Araki
IPC分类号： C30B19/06
CPC分类号： C30B29/403 , C30B9/00 , C30B11/00 , C30B29/406 , H01L33/007 , H01S5/32341 , Y10T117/10 , Y10T117/1012 , Y10T117/1024 , Y10T117/1052 , Y10T117/106
摘要： A group-III nitride crystal growth method comprises the steps of: a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal; b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in the step a) and a substance at least containing nitrogen; and c) creating a state in which nitrogen can be introduced into the molten liquid prepared by the step a).
摘要翻译： III族氮化物晶体生长方法包括以下步骤：a）制备碱性材料和至少含有III族金属的物质的混合熔融液; b）从步骤a）中制备的混合熔融液体和至少含有氮的物质引起III族氮化物晶体的生长; 和c）产生可以将氮气引入到由步骤a）制备的熔融液体中的状态。

32. 发明授权

US07508003B2 Production of a GaN bulk crystal substrate and a semiconductor device formed thereon 有权
标题翻译：生产GaN体晶衬底及其上形成的半导体器件
公开(公告)号：US07508003B2
公开(公告)日：2009-03-24
申请号：US11408656
申请日：2006-04-20
申请人： Seiji Sarayama , Masahiko Shimada , Hisanori Yamane , Hirokazu Iwata
发明人： Seiji Sarayama , Masahiko Shimada , Hisanori Yamane , Hirokazu Iwata
IPC分类号： H01L27/15 , H01L29/167 , H01L33/00 , C01B21/06
CPC分类号： C30B7/105 , C09K11/62 , C30B7/00 , C30B9/00 , C30B11/00 , C30B15/00 , C30B29/403 , C30B29/406 , H01L29/2003 , H01L29/7783 , Y10T117/1092 , Y10T117/1096 , Y10T428/2982
摘要： A crystal has a diameter of 1 cm or more and shows a strongest peak in cathode luminescent spectrum at a wavelength of 360 nm in correspondence to a band edge.
摘要翻译：晶体具有1cm或更大的直径，并且对应于带边缘，在360nm波长处的阴极发光光谱中显示出最强峰。

33. 发明授权

US07220311B2 Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitride 有权
公开(公告)号：US07220311B2
公开(公告)日：2007-05-22
申请号：US10702776
申请日：2003-11-07
申请人： Hirokazu Iwata , Seiji Sarayama
发明人： Hirokazu Iwata , Seiji Sarayama
IPC分类号： C30B9/02
CPC分类号： C30B29/403 , C30B9/00 , C30B29/406 , Y10T117/1092 , Y10T117/1096
摘要： A crystal growth method of a group III nitride includes the steps of forming a melt mixture of an alkali metal and a group III element in a reaction vessel, and growing a crystal of a group III nitride formed of the group III element and nitrogen from the melt mixture in the reaction vessel, wherein the step of growing the crystal of the group III nitride is conducted while controlling an increase rate of degree of supersaturation of a group III nitride component in the melt mixture in a surface region of the melt mixture.

34. 发明授权

US06949140B2 Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device 有权
标题翻译：晶体生长方法，晶体生长装置，III族氮化物晶体和III族氮化物半导体器件
公开(公告)号：US06949140B2
公开(公告)日：2005-09-27
申请号：US10308149
申请日：2002-12-03
申请人： Seiji Sarayama , Hirokazu Iwata , Masahiko Shimada , Hisanori Yamane , Masato Aoki
发明人： Seiji Sarayama , Hirokazu Iwata , Masahiko Shimada , Hisanori Yamane , Masato Aoki
IPC分类号： C30B9/00 , C30B11/00 , C30B17/00
CPC分类号： C30B29/403 , C30B9/00 , C30B11/00 , C30B29/406 , Y10T117/1092
摘要： A group-III nitride crystal growth method, comprising the steps of: a) preparing a mixed molten liquid of an alkaline metal and a material at least comprising a group-III metal; b) growing a group-III nitride crystal of the group-III metal and nitrogen from the mixed molten liquid and a material at least comprising nitrogen; and c) setting a predetermined crystal growth condition according to a zone defined by a pressure and a temperature in said step b).
摘要翻译： III族氮化物晶体生长方法，包括以下步骤：a）制备碱金属和至少包含III族金属的材料的混合熔融液; b）从混合的熔融液体中生长III族金属的III族氮化物晶体和至少包含氮的材料; 以及c）根据由所述步骤b）中的压力和温度限定的区域来设定预定的晶体生长条件。

35. 发明授权

US09096950B2 Nitride crystal and method for producing the same 有权
标题翻译：氮化物晶体及其制造方法
公开(公告)号：US09096950B2
公开(公告)日：2015-08-04
申请号：US13164939
申请日：2011-06-21
申请人： Takashi Satoh , Seiji Sarayama , Hirokazu Iwata , Yusuke Mori , Yasuo Kitaoka
发明人： Takashi Satoh , Seiji Sarayama , Hirokazu Iwata , Yusuke Mori , Yasuo Kitaoka
IPC分类号： B32B7/02 , C30B29/40 , C30B9/10
CPC分类号： C30B19/02 , C30B9/10 , C30B19/08 , C30B19/10 , C30B29/403 , C30B29/406 , Y10T428/24942
摘要： A nitride crystal which encircles an outer periphery of a seed crystal, the nitride crystal in an embodiment includes: a first partial region, and a second partial region that has optical characteristics different from those of the first partial region and has optical characteristics which indicate the crystal orientation.
摘要翻译：一种环绕晶种的外周的氮化物晶体，在一个实施方案中，氮化物晶体包括：第一部分区域和具有与第一部分区域的光学特性不同的光学特性的第二部分区域，并且具有指示晶体取向。

36. 发明授权

US08623138B2 Crystal growth apparatus 有权
标题翻译：晶体生长装置
公开(公告)号：US08623138B2
公开(公告)日：2014-01-07
申请号：US12353608
申请日：2009-01-14
申请人： Seiji Sarayama , Hisanori Yamane , Masahiko Shimada , Masafumi Kumano , Hirokazu Iwata , Takashi Araki
发明人： Seiji Sarayama , Hisanori Yamane , Masahiko Shimada , Masafumi Kumano , Hirokazu Iwata , Takashi Araki
IPC分类号： C30B9/06
CPC分类号： C30B29/403 , C30B9/00 , C30B11/00 , C30B29/406 , H01L33/007 , H01S5/32341 , Y10T117/10 , Y10T117/1012 , Y10T117/1024 , Y10T117/1052 , Y10T117/106
摘要： A group-III nitride crystal growth method comprises the steps of: a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal; b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in the step a) and a substance at least containing nitrogen; and c) creating a state in which nitrogen can be introduced into the molten liquid prepared by the step a).
摘要翻译： III族氮化物晶体生长方法包括以下步骤：a）制备碱性材料和至少含有III族金属的物质的混合熔融液; b）从步骤a）中制备的混合熔融液体和至少含有氮的物质引起III族氮化物晶体的生长; 和c）产生可以将氮气引入到由步骤a）制备的熔融液体中的状态。

37. 发明授权

US07981213B2 Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitride 有权
标题翻译： III族氮化物晶体，晶体生长工艺和III族氮化物的晶体生长装置
公开(公告)号：US07981213B2
公开(公告)日：2011-07-19
申请号：US11785036
申请日：2007-04-13
申请人： Hirokazu Iwata , Seiji Sarayama
发明人： Hirokazu Iwata , Seiji Sarayama
IPC分类号： C30B11/04
CPC分类号： C30B29/403 , C30B9/00 , C30B29/406 , Y10T117/1092 , Y10T117/1096
摘要： A crystal growth method of a group III nitride includes the steps of forming a melt mixture of an alkali metal and a group III element in a reaction vessel, and growing a crystal of a group III nitride formed of the group III element and nitrogen from the melt mixture in the reaction vessel, wherein the step of growing the crystal of the group III nitride is conducted while controlling an increase rate of degree of supersaturation of a group III nitride component in the melt mixture in a surface region of the melt mixture.
摘要翻译： III族氮化物的晶体生长方法包括以下步骤：在反应容器中形成碱金属和III族元素的熔融混合物，并且生长由III族元素形成的III族氮化物的晶体和来自熔融混合物，其中在控制熔融混合物的表面区域中熔融混合物中III族氮化物组分的过饱和度的增加速率的同时进行III族氮化物的晶体生长的步骤。

38. 发明授权

US07718002B2 Crystal manufacturing apparatus 有权
标题翻译：水晶制造装置
公开(公告)号：US07718002B2
公开(公告)日：2010-05-18
申请号：US12042964
申请日：2008-03-05
申请人： Seiji Sarayama , Hirokazu Iwata
发明人： Seiji Sarayama , Hirokazu Iwata
IPC分类号： C30B13/14
CPC分类号： C30B29/403 , C30B9/10 , C30B29/406 , Y10S117/90 , Y10T117/10 , Y10T117/1016 , Y10T117/1024 , Y10T117/1064
摘要： A crystal manufacturing apparatus for manufacturing a group III nitride crystal includes a crucible that holds a mixed molten liquid including an alkali metal and a group III metal; a reaction vessel accommodating the crucible in the reaction vessel; a heating device that heats the crucible with the reaction vessel; a holding vessel having a lid that is capable of opening and closing, accommodating the reaction vessel and the heating device in the holding vessel; a sealed vessel accommodating the holding vessel in the sealed vessel, having an operating device that enables opening the lid of the holding vessel for supplying source materials into the crucible and taking out a manufactured GaN crystal under a sealed condition, and closing the lid of the holding vessel that is sealed in the sealed vessel, the sealed vessel including an inert gas atmosphere or a nitrogen atmosphere; and a gas supplying device for supplying a nitrogen gas to the mixed molten liquid through each of the vessels.
摘要翻译：用于制造III族氮化物晶体的晶体制造装置包括：保持包含碱金属和III族金属的混合熔融液的坩埚; 将坩埚容纳在反应容器中的反应容器; 用反应容器加热坩埚的加热装置; 保持容器，其具有能够打开和关闭的盖子，将反应容器和加热装置容纳在容纳容器中; 容纳保持容器在密封容器中的密封容器，具有能够打开保持容器的盖以将源材料供应到坩埚中并在密封状态下取出制造的GaN晶体的操作装置，并且关闭盖保持容器密封在密封容器中，密封容器包括惰性气体气氛或氮气氛; 以及用于通过每个容器向混合的熔融液体供给氮气的气体供给装置。

39. 发明授权

US07531038B2 Crystal growth method 有权
标题翻译：晶体生长法
公开(公告)号：US07531038B2
公开(公告)日：2009-05-12
申请号：US11302128
申请日：2005-12-14
申请人： Seiji Sarayama , Hisanori Yamane , Masahiko Shimada , Masafumi Kumano , Hirokazu Iwata , Takashi Araki
发明人： Seiji Sarayama , Hisanori Yamane , Masahiko Shimada , Masafumi Kumano , Hirokazu Iwata , Takashi Araki
IPC分类号： C30B13/08
CPC分类号： C30B29/403 , C30B9/00 , C30B11/00 , C30B29/406 , H01L33/007 , H01S5/32341 , Y10T117/10 , Y10T117/1012 , Y10T117/1024 , Y10T117/1052 , Y10T117/106
摘要： A group-III nitride crystal growth method comprises the steps of: a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal; b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in the step a) and a substance at least containing nitrogen; and c) creating a state in which nitrogen can be introduced into the molten liquid prepared by the step a).
摘要翻译： III族氮化物晶体生长方法包括以下步骤：a）制备碱性材料和至少含有III族金属的物质的混合熔融液; b）从步骤a）中制备的混合熔融液体和至少含有氮的物质引起III族氮化物晶体的生长; 和c）产生可以将氮气引入到由步骤a）制备的熔融液体中的状态。

40. 发明申请

US20080216737A1 CRYSTAL MANUFACTURING APPARATUS 有权
标题翻译：水晶制造设备
公开(公告)号：US20080216737A1
公开(公告)日：2008-09-11
申请号：US12042964
申请日：2008-03-05
申请人： Seiji Sarayama , Hirokazu Iwata
发明人： Seiji Sarayama , Hirokazu Iwata
IPC分类号： C30B35/00
CPC分类号： C30B29/403 , C30B9/10 , C30B29/406 , Y10S117/90 , Y10T117/10 , Y10T117/1016 , Y10T117/1024 , Y10T117/1064
摘要： A crystal manufacturing apparatus for manufacturing a group III nitride crystal includes a crucible that holds a mixed molten liquid including an alkali metal and a group III metal; a reaction vessel accommodating the crucible in the reaction vessel; a heating device that heats the crucible with the reaction vessel; a holding vessel having a lid that is capable of opening and closing, accommodating the reaction vessel and the heating device in the holding vessel; a sealed vessel accommodating the holding vessel in the sealed vessel, having an operating device that enables opening the lid of the holding vessel for supplying source materials into the crucible and taking out a manufactured GaN crystal under a sealed condition, and closing the lid of the holding vessel that is sealed in the sealed vessel, the sealed vessel including an inert gas atmosphere or a nitrogen atmosphere; and a gas supplying device for supplying a nitrogen gas to the mixed molten liquid through each of the vessels.
摘要翻译：用于制造III族氮化物晶体的晶体制造装置包括：保持包含碱金属和III族金属的混合熔融液的坩埚; 将坩埚容纳在反应容器中的反应容器; 用反应容器加热坩埚的加热装置; 保持容器，其具有能够打开和关闭的盖子，将反应容器和加热装置容纳在容纳容器中; 容纳保持容器在密封容器中的密封容器，具有能够打开保持容器的盖以将源材料供应到坩埚中并在密封状态下取出制造的GaN晶体的操作装置，并且关闭盖保持容器密封在密封容器中，密封容器包括惰性气体气氛或氮气氛; 以及用于通过每个容器向混合的熔融液体供给氮气的气体供给装置。

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