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    • 31. 发明申请
    • AIR CONDITIONER FOR VEHICLE
    • 车用空调
    • US20120261110A1
    • 2012-10-18
    • US13435574
    • 2012-03-30
    • Yoshiki KatohSatoshi Itoh
    • Yoshiki KatohSatoshi Itoh
    • B60H1/00G05D23/19
    • B60H1/00328B60H1/00335F28D1/05391F28F9/0214F28F9/0246
    • A composite heat exchanger includes a first heat exchanger configured to exchange heat between feed air and a refrigerant, and a second heat exchanger configured to exchange heat between the feed air and engine coolant. The composite heat exchanger is integrated so as to enable heat transfer between discharge refrigerant flowing through the first heat exchanger and the coolant flowing through the second heat exchanger. Furthermore, the composite heat exchanger is configured to change an amount of the heat exchanged among the feed air, the discharge refrigerant and the coolant in the composite heat exchanger by changing at least one of a volume of the feed air, a refrigerant discharge capacity of the compression mechanism, and an inflow amount of the heat medium.
    • 复合热交换器包括构造成在进料空气和制冷剂之间交换热量的第一热交换器和被配置为在进料空气和发动机冷却剂之间交换热量的第二热交换器。 复合式热交换器是一体的,以便使流过第一热交换器的排放制冷剂和流过第二热交换器的冷却剂之间的热传递。 此外,复合热交换器构成为,通过改变原料空气的体积,制冷剂的排出容量,制冷剂的排出容量等,来改变复合式热交换器中的进料空气,排出制冷剂和冷却剂之间的热交换量 压缩机构和热介质的流入量。
    • 33. 发明申请
    • SOLAR CELL
    • 太阳能电池
    • US20100078072A1
    • 2010-04-01
    • US12565849
    • 2009-09-24
    • Yasutaka NishidaMichihiko InabaShinya SakuradaSatoshi Itoh
    • Yasutaka NishidaMichihiko InabaShinya SakuradaSatoshi Itoh
    • H01L31/00
    • H01L31/0321H01L31/0296H01L31/0322H01L31/0323H01L31/072H01L31/073Y02E10/541Y02E10/543
    • A solar cell includes a p-n junction formed by joining a p-type semiconductor and an n-type semiconductor. The p-type semiconductor is a chalcopyrite compound semiconductor with a band gap of 1.5 eV or more within which an intermediate level exists with a half bandwidth of 0.05 eV or more. The intermediate level is different from an impurity level. The chalcopyrite compound semiconductor includes a first element having first electronegativity of 1.9 or more in Pauling units, the first element occupying a lattice site of the semiconductor. A portion of the first element is substituted with a second element having second electronegativity different from the first electronegativity, the second element being a congeneric element of the first element. The intermediate level is created by substituting the first element with the second element.
    • 太阳能电池包括通过连接p型半导体和n型半导体形成的p-n结。 p型半导体是具有1.5eV以上的带隙的黄铜矿化合物半导体,其中存在中等水平,半带宽为0.05eV以上。 中间水平与杂质水平不同。 黄铜矿化合物半导体包括在保罗单元中具有1.9或更高的第一电负性的第一元素,第一元素占据半导体的晶格位置。 第一元件的一部分被具有不同于第一电负性的第二电负性的第二元件取代,第二元素是第一元素的同源元件。 中间级别是通过用第二个元素代替第一个元素来创建的。
    • 39. 发明申请
    • Method for designing semiconductor device and method for evaluating reliability thereof
    • 设计半导体器件的方法及其可靠性评估方法
    • US20060156263A1
    • 2006-07-13
    • US11326355
    • 2006-01-06
    • Satoshi Itoh
    • Satoshi Itoh
    • G06F17/50G06F19/00G06F9/45G06F11/00
    • G06F17/5068
    • A semiconductor device 100 has a configuration having a via 124 formed on a first interconnect 112. A method for designing the semiconductor device 100 includes: calculating an anticipated value xopen of a dimension of a growing region of a void 150 expanding in a stress induced voiding (SIV)-ensured time topen at a predetermined temperature, assuming that the void 150 grows from an origin in a copper interconnect (interconnect metallic film 110); and determining a geometric factor of the via 124 by comparing a dimension of a contacting region between a first interconnect 112 and the via 124 with the anticipated value xopen. The dimension of the contacting region may be presented as d+h (where d represents a diameter of a via 124, and h represents a buried depth that the via 124 is buried within the first interconnect 112).
    • 半导体器件100具有在第一互连112上形成有通孔124的构造。 用于设计半导体器件100的方法包括:计算在应力诱导空隙(SIV)保持时间t T中膨胀的空隙150的生长区域的尺寸的预期值x < 假设空隙150从铜互连(互连金属膜110)中的原点生长,在预定温度下打开。 以及通过将第一互连112和通孔124之间的接触区域的尺寸与预期值x开放比较来确定通孔124的几何因子。 接触区域的尺寸可以表示为d + h(其中d表示通孔124的直径,h表示通孔124埋在第一互连112内的掩埋深度)。