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    • 32. 发明授权
    • Method for manufacturing thin film transistor liquid crystal display
    • 制造薄膜晶体管液晶显示器的方法
    • US06500702B2
    • 2002-12-31
    • US09736905
    • 2000-12-13
    • Deuk Su LeeJung Mok Jun
    • Deuk Su LeeJung Mok Jun
    • H01L2184
    • H01L27/1288H01L27/1255
    • The present invention discloses a method for manufacturing thin film transistor liquid crystal display including the following steps so as to form simultaneously a via hole for contacting a drain electrode and a pixel electrode mutually and the channel of thin film transistor: forming sequentially gate insulation layer, amorphous silicon layer for channel and doped semiconductor layer for ohmic contact, and metal layer for source/drain electrode on the back substrate where the gate electrode and the storage capacitor electrode have been formed; patterning the metal layer for source/drain electrode and the doped semiconductor layer for ohmic contact through a second photolithograph process so that the source electrode, the drain electrode, and the ohmic contacts thereof may be formed; forming a passivation layer on the back substrate where the source electrode and the drain electrode have been formed; patterning the passivation layer, the amorphous silicon layer for channel, and the gate insulation layer through a third photolithograph process so that a part of the drain electrode and the back substrate portion between the storage capacitor electrode and the thin film transistor may be exposed.
    • 本发明公开了一种制造薄膜晶体管液晶显示器的方法,包括以下步骤,以便同时形成用于使漏电极和像素电极相互接触的通孔和薄膜晶体管的沟道:依次形成栅极绝缘层, 用于欧姆接触的沟道和掺杂半导体层的非晶硅层和在其上形成栅极电极和存储电容器电极的背面基板上的源极/漏极的金属层; 通过第二光刻工艺图案化用于源/漏电极的金属层和用于欧姆接触的掺杂半导体层,从而可以形成源极,漏电极及其欧姆接触; 在形成有源电极和漏电极的背面基板上形成钝化层; 通过第三光刻工艺图案化钝化层,非晶硅层和栅极绝缘层,使得存储电容器电极和薄膜晶体管之间的一部分漏电极和后基板部分可能暴露。
    • 33. 发明授权
    • Liquid crystal display having overlapped pixel electrodes and method for fabricating the same
    • 具有重叠像素电极的液晶显示器及其制造方法
    • US06226057B1
    • 2001-05-01
    • US09061053
    • 1998-04-16
    • Deuk Su Lee
    • Deuk Su Lee
    • G02F11343
    • G02F1/134336G02F1/136213G02F1/1368G02F2201/123
    • Disclosed is a liquid crystal display which comprise: a transparent insulating substrate; a plurality of source bus lines and a plurality of gate bus lines arranged in rows and columns at right angles to each other on a surface of the transparent insulating substrate; a plurality of thin film transistors formed on the surface of the transparent insulating substrate, each connected to the source bus lines and the gate bus lines in the vicinity of their intersection and each comprising source, drain and gate electrodes; a plurality of pixel electrodes comprising first pixel electrodes and second pixel electrodes formed in alternative array at different level layers of upper and lower layers on the surface of the transparent insulating substrate from each other, and each connected to the drain electrode of the thin film transistors, wherein the first pixel electrodes are formed in even columns of the lower level layer and comprise first extended portions overlapped with at least the source bus lines at both sides thereof in the row direction, wherein the second pixel electrodes are formed in odd columns of the upper level layer and comprise second extended portions overlapped with at least the data lines at both sides thereof in the row direction; a first insulating layer disposed between the source bus lines and the first pixel electrodes; and a second insulating layer disposed between the first and second pixel electrodes.
    • 公开了一种液晶显示器,其包括:透明绝缘基板; 多个源极总线和多个栅极总线,其在所述透明绝缘基板的表面上彼此成直角排列成行和列; 形成在所述透明绝缘基板的表面上的多个薄膜晶体管,各自与所述源极,漏极和栅电极的交叉点附近的源极总线和栅极总线连接, 多个像素电极,包括第一像素电极和第二像素电极,所述第一像素电极和第二像素电极在所述透明绝缘基板的表面上的上层和下层的不同层级上以备选阵列形成,并且每个像素电极彼此连接到所述薄膜晶体管的漏电极 其中,所述第一像素电极形成在所述下层的偶数列中,并且包括与所述行方向两侧的至少所述源极总线重叠的第一延伸部,其中所述第二像素电极形成为所述第二像素电极的奇数列 并且包括与行方向上的至少两条数据线重叠的第二延伸部分; 设置在所述源极总线与所述第一像素电极之间的第一绝缘层; 以及设置在第一和第二像素电极之间的第二绝缘层。