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31. 发明授权

US09384976B2 Method for manufacturing semiconductor device 有权
公开(公告)号：US09384976B2
公开(公告)日：2016-07-05
申请号：US14578891
申请日：2014-12-22
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Mitsuhiro Ichijo , Tetsuhiro Tanaka , Seiji Yasumoto , Shun Mashiro , Yoshiaki Oikawa , Kenichi Okazaki
IPC分类号： H01L21/00 , H01L21/02 , C23C16/30 , C23C16/455 , C23C16/511 , H01J37/32 , H01J37/34 , H01L29/49 , H01L29/786 , H01L29/66
CPC分类号： H01L21/44 , C23C16/308 , C23C16/45578 , C23C16/511 , H01J37/32192 , H01J37/3244 , H01J37/32449 , H01J37/34 , H01L21/02274 , H01L21/0237 , H01L21/02554 , H01L21/02565 , H01L21/02614 , H01L21/02631 , H01L21/67167 , H01L29/24 , H01L29/42356 , H01L29/4908 , H01L29/66742 , H01L29/66969 , H01L29/7869
摘要： It is an object to drive a semiconductor device at high speed or to improve the reliability of the semiconductor device. In a method for manufacturing the semiconductor device, in which a gate electrode is formed over a substrate with an insulating property, a gate insulating film is formed over the gate electrode, and an oxide semiconductor film is formed over the gate insulating film, the gate insulating film is formed by deposition treatment using high-density plasma. Accordingly, dangling bonds in the gate insulating film are reduced and the quality of the interface between the gate insulating film and the oxide semiconductor is improved.

32. 发明授权

US09269822B2 Semiconductor device and method for manufacturing semiconductor device 有权
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US09269822B2
公开(公告)日：2016-02-23
申请号：US14479623
申请日：2014-09-08
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yoshitaka Yamamoto , Tetsuhiro Tanaka , Takayuki Inoue , Hideomi Suzawa , Yasuhiko Takemura
IPC分类号： H01L29/78 , H01L29/786 , H01L29/66 , G11C16/00 , H01L29/788 , H01L29/49
CPC分类号： H01L29/7869 , G11C11/24 , G11C16/00 , G11C16/0466 , H01L29/4908 , H01L29/66969 , H01L29/78606 , H01L29/78648 , H01L29/78696 , H01L29/7881
摘要： A method for manufacturing a semiconductor device with adjusted threshold is provided. In a semiconductor device including a semiconductor, a source or drain electrode electrically connected to the semiconductor, a first gate electrode and a second gate electrode between which the semiconductor is provided, a charge trap layer provided between the first gate electrode and the semiconductor, and a gate insulating layer provided between the second gate electrode and the semiconductor, a threshold is increased by trapping electrons in the charge trap layer by keeping a potential of the first gate electrode at a potential higher than a potential of the source or drain electrode for 1 second or more while heating. After the threshold adjustment process, the first gate electrode is removed or insulated from other circuits. Alternatively, a resistor may be provided between the first gate electrode and other circuits.
摘要翻译：提供一种用于制造具有调节阈值的半导体器件的方法。在包括半导体，与半导体电连接的源电极或漏电极的半导体器件中，设置有半导体的第一栅电极和第二栅电极，设置在第一栅电极和半导体之间的电荷陷阱层，以及设置在第二栅电极和半导体之间的栅极绝缘层，通过将第一栅电极的电位保持在高于源电极或漏电极的电位的电位为1，通过在电荷陷阱层中俘获电子来增加阈值第二次或多次加热。在阈值调整处理之后，第一栅电极被去除或与其它电路绝缘。或者，可以在第一栅极电极和其它电路之间设置电阻器。

33. 发明授权

US09153537B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09153537B2
公开(公告)日：2015-10-06
申请号：US13941869
申请日：2013-07-15
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Tetsuhiro Tanaka
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L23/532 , H01L29/04 , H01L29/45 , H01L29/66 , H01L29/786
CPC分类号： H01L23/53238 , H01L29/04 , H01L29/458 , H01L29/66765 , H01L29/78672 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor film having an impurity region to which at least an n-type or p-type impurity is added and a wiring are provided. The wiring includes a diffusion prevention film containing a conductive metal oxide, and a low resistance conductive film over the diffusion prevention film. In a contact portion between the wiring and the semiconductor film, the diffusion prevention film and the impurity region are in contact with each other. The diffusion prevention film is framed in such a manner that a conductive film is exposed to plasma generated from a mixed gas of an oxidizing gas and a halogen-based gas to form an oxide of a metal material contained in the conductive film, the conductive film in which the oxide of the metal material is formed is exposed to an atmosphere containing water to be fluidized, and the fluidized conductive film is solidified.
摘要翻译：具有添加了至少n型或p型杂质的杂质区域和配线的半导体膜。布线包括含有导电金属氧化物的扩散防止膜和在扩散防止膜上的低电阻导电膜。在布线和半导体膜之间的接触部分中，扩散防止膜和杂质区彼此接触。扩散防止膜被框架化，使得导电膜暴露于由氧化气体和卤素系气体的混合气体产生的等离子体，以形成导电膜中所含的金属材料的氧化物，导电膜其中形成金属材料的氧化物暴露于含有待流化的水的气氛中，流化的导电膜固化。

34. 发明申请

US20150187952A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20150187952A1
公开(公告)日：2015-07-02
申请号：US14580651
申请日：2014-12-23
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Tetsuhiro Tanaka , Hideomi Suzawa , Yasumasa Yamane , Yuhei Sato , Sachiaki Tezuka
IPC分类号： H01L29/786 , H01L27/088 , H01L29/16
CPC分类号： H01L29/7869 , H01L27/0688 , H01L27/088 , H01L27/0886 , H01L27/1225 , H01L29/16
摘要： To provide a transistor with stable electrical characteristics, a transistor with a low off-state current, a transistor with a high on-state current, a semiconductor device including the transistor, or a durable semiconductor device. The semiconductor device includes a first transistor using silicon, an aluminum oxide film over the first transistor, and a second transistor using an oxide semiconductor over the aluminum oxide film. The oxide semiconductor has a lower hydrogen concentration than silicon.
摘要翻译：为了提供具有稳定电特性的晶体管，具有低截止电流的晶体管，具有高导通电流的晶体管，包括晶体管的半导体器件或耐用的半导体器件。半导体器件包括使用硅的第一晶体管，在第一晶体管上的氧化铝膜，以及在氧化铝膜上使用氧化物半导体的第二晶体管。氧化物半导体的氢浓度低于硅。

35. 发明申请

US20150076496A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20150076496A1
公开(公告)日：2015-03-19
申请号：US14484942
申请日：2014-09-12
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Tetsuhiro Tanaka , Hiromichi Godo
IPC分类号： H01L29/786 , H01L29/49 , H01L21/477 , H01L29/04 , H01L21/02 , H01L21/385 , H01L29/66 , H01L29/51
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/0262 , H01L21/477 , H01L27/1225 , H01L29/045 , H01L29/495 , H01L29/51 , H01L29/78648
摘要： A semiconductor device includes a gate electrode having higher Gibbs free energy for oxidation than a gate insulating film. An oxide semiconductor layer having a fin shape is formed over an insulating surface, a gate insulating film is formed over the oxide semiconductor layer, a gate electrode including an oxide layer and facing top and side surfaces of the oxide semiconductor layer with the gate insulating film located therebetween is formed, and then by performing heat treatment, a gate electrode is reduced and oxygen is supplied to the oxide semiconductor layer through the gate insulating film.
摘要翻译：半导体器件包括具有比栅极绝缘膜更高的吉布斯自由能用于氧化的栅电极。在绝缘表面上形成具有翅片形状的氧化物半导体层，在氧化物半导体层上形成栅极绝缘膜，包括氧化物层的栅极和面对栅极绝缘膜的氧化物半导体层的顶部和侧面形成，然后通过进行热处理，减少栅电极，并通过栅极绝缘膜向氧化物半导体层提供氧。

36. 发明授权

US08962386B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08962386B2
公开(公告)日：2015-02-24
申请号：US13674175
申请日：2012-11-12
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Hiromichi Godo , Tetsuhiro Tanaka
IPC分类号： H01L21/36 , H01L29/786 , H01L29/49 , H01L21/02
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L29/4908
摘要： To reduce oxygen vacancies in an oxide semiconductor film and the vicinity of the oxide semiconductor film and to improve electric characteristics of a transistor including the oxide semiconductor film. A semiconductor device includes a gate electrode whose Gibbs free energy for oxidation is higher than that of a gate insulating film. In a region where the gate electrode is in contact with the gate insulating film, oxygen moves from the gate electrode to the gate insulating film, which is caused because the gate electrode has higher Gibbs free energy for oxidation than the gate insulating film. The oxygen passes through the gate insulating film and is supplied to the oxide semiconductor film in contact with the gate insulating film, whereby oxygen vacancies in the oxide semiconductor film and the vicinity of the oxide semiconductor film can be reduced.
摘要翻译：为了减少氧化物半导体膜和氧化物半导体膜附近的氧空位，并且改善包括氧化物半导体膜的晶体管的电特性。半导体器件包括栅极电极，其吉布斯自由能用于氧化，高于栅极绝缘膜的自由能。在栅电极与栅极绝缘膜接触的区域中，由于栅电极具有比栅极绝缘膜更高的吉布斯自由能进行氧化而引起的氧从栅电极移动到栅极绝缘膜。氧气通过栅极绝缘膜，并且被提供给与栅极绝缘膜接触的氧化物半导体膜，由此可以减少氧化物半导体膜中的氧空位和氧化物半导体膜附近的氧空位。

37. 发明授权

US11133402B2 Semiconductor device, method for manufacturing semiconductor device, and electronic appliance having semiconductor device 有权
公开(公告)号：US11133402B2
公开(公告)日：2021-09-28
申请号：US16778103
申请日：2020-01-31
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Tetsuhiro Tanaka , Ryo Tokumaru , Yasumasa Yamane , Akihisa Shimomura , Naoki Okuno
IPC分类号： H01L29/66 , H01L29/423 , H01L29/786 , H01L29/45 , H01L29/49 , H01L27/12
摘要： To provide a semiconductor device including an oxide semiconductor layer with high and stable electrical characteristics, the semiconductor device is manufactured by forming a first insulating layer, forming oxide over the first insulating layer and then removing the oxide n times (n is a natural number), forming an oxide semiconductor layer over the first insulating layer, forming a second insulating layer over the oxide semiconductor layer, and forming a conductive layer over the second insulating layer. Alternatively, the semiconductor device is manufactured by forming the oxide semiconductor layer over the first insulating layer, forming the second insulating layer over the oxide semiconductor layer, forming the oxide over the second insulating layer and then removing the oxide n times (n is a natural number), and forming the conductive layer over the second insulating layer.

38. 发明授权

US10763373B2 Semiconductor device 有权
公开(公告)号：US10763373B2
公开(公告)日：2020-09-01
申请号：US16367329
申请日：2019-03-28
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Yutaka Okazaki , Akihisa Shimomura , Naoto Yamade , Tomoya Takeshita , Tetsuhiro Tanaka
IPC分类号： H01L29/786 , H01L29/66 , H01L29/45 , H01L29/49 , H01L27/12
摘要： A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.

39. 发明授权

US10600918B2 Semiconductor device 有权
公开(公告)号：US10600918B2
公开(公告)日：2020-03-24
申请号：US15211218
申请日：2016-07-15
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Tetsuhiro Tanaka , Toshihiko Takeuchi , Yasumasa Yamane
IPC分类号： H01L29/12 , H01L29/51 , H01L27/12 , H01L29/786 , H01L29/06 , H01L29/66 , H01L29/49 , H01L29/423 , H01L29/78
摘要： Provided is a semiconductor device having a structure with which a decrease in electrical characteristics that becomes more significant with miniaturization can be suppressed. The semiconductor device includes a first oxide semiconductor film, a gate electrode overlapping with the first oxide semiconductor film, a first gate insulating film between the first oxide semiconductor film and the gate electrode, and a second gate insulating film between the first gate insulating film and the gate electrode. In the first gate insulating film, a peak appears at a diffraction angle 2θ of around 28° by X-ray diffraction. A band gap of the first oxide semiconductor film is smaller than a band gap of the first gate insulating film, and the band gap of the first gate insulating film is smaller than a band gap of the second gate insulating film.

40. 发明授权

US10522397B2 Manufacturing method of semiconductor device 有权
公开(公告)号：US10522397B2
公开(公告)日：2019-12-31
申请号：US16354394
申请日：2019-03-15
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yuta Endo , Hideomi Suzawa , Sachiaki Tezuka , Tetsuhiro Tanaka , Toshiya Endo , Mitsuhiro Ichijo
IPC分类号： H01L21/768 , H01L29/786 , H01L29/66 , H01L21/8234 , H01L21/02 , H01L21/8258 , H01L29/423 , H01L29/49 , H01L27/06 , H01L27/092 , H01L27/12
摘要： A miniaturized transistor is provided. A first layer is formed over a third insulator over a semiconductor; a second layer is formed over the first layer; an etching mask is formed over the second layer; the second layer is etched using the etching mask until the first layer is exposed to form a third layer; a selective growth layer is formed on a top surface and a side surface of the third layer; the first layer is etched using the third layer and the selective growth layer until the third insulator is exposed to form a fourth layer; and the third insulator is etched using the third layer, the selective growth layer, and the fourth layer until the semiconductor is exposed to form a first insulator.

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