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    • 37. 发明授权
    • Method evaluating threshold level of a data cell in a memory device
    • 方法评估存储器件中数据单元的阈值水平
    • US07516037B2
    • 2009-04-07
    • US11755891
    • 2007-05-31
    • David John BaldwinEric BlackallJoseph DevoreRoss E. Teggatz
    • David John BaldwinEric BlackallJoseph DevoreRoss E. Teggatz
    • G06F15/00
    • G11C16/34
    • A method evaluating threshold of a data cell in a memory device including a programming locus coupled with the data cell for receiving a programming signal setting a stored signal level in the data cell and responding to a read signal to indicate the stored signal at a read locus; includes the steps of: (a) in no particular order; (1) selecting a test threshold signal; and (2) setting a read signal at a non-read level; (b) applying the test threshold signal to the programming locus; (c) cycling the read signal between a read level and a non-read level while applying the test threshold signal to the programming locus to present at least two test signals at the read locus when the read signal is at the read level; and (d) while cycling, observing whether the at least two test signals manifest a difference greater than a predetermined amount.
    • 一种评估存储器件中的数据单元的阈值的方法,包括与所述数据单元耦合的编程轨迹,用于接收在所述数据单元中设置存储的信号电平的编程信号,并且响应于读取信号以指示所读取的位置处存储的信号 ; 包括以下步骤:(a)没有特别的顺序; (1)选择测试阈值信号; 和(2)以非读取级别设置读取信号; (b)将测试阈值信号应用于编程轨迹; (c)在读取电平和非读取电平之间循环读取信号,同时当读取信号处于读取电平时,将测试阈值信号施加到编程轨迹,以在读取轨迹处呈现至少两个测试信号; 和(d)循环时,观察至少两个测试信号是否表现出大于预定量的差。
    • 40. 发明授权
    • Asymmetrical, bidirectional triggering ESD structure
    • 不对称,双向触发ESD结构
    • US5780905A
    • 1998-07-14
    • US768358
    • 1996-12-17
    • Wayne T. ChenRoss E. TeggatzJulian Z. Chen
    • Wayne T. ChenRoss E. TeggatzJulian Z. Chen
    • H01L27/02H01L23/62
    • H01L27/0262
    • An ESD protection structure which includes, preferably a single semiconductor chip, a forward SCR for coupling across a source of potential and a reverse SCR for coupling across the same source of potential which is non-symmetrical to the forward SCR. The breakdown voltage of the forward SCR is different from the breakdown voltage of the reverse SCR. Each of the SCRs has a separate triggering mechanism. None of the anode, cathode and triggering elements of the forward SCR are common to the reverse SCR. A unidirectional device, preferably a Schottky diode, is disposed in the body of semiconductor material between the forward and reverse SCRs to prevent conduction from the body of semiconductor material when the source of potential across the SCRs is reversed.
    • 一种ESD保护结构,其优选地包括单个半导体芯片,用于跨越电位源耦合的正向SCR和用于跨过与正向SCR非对称的相同电位源耦合的反向SCR。 正向SCR的击穿电压不同于反向SCR的击穿电压。 每个SCR具有单独的触发机制。 正向SCR的阳极,阴极和触发元件都不是反向SCR共有的。 单向器件(优选肖特基二极管)设置在正向和反向SCR之间的半导体材料体内,以防止当跨越SCR的电位源反向时,半导体材料的主体导电。