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    • 31. 发明申请
    • SELF-CONTAINED PRESSURIZED INJECTION DEVICE
    • 自含式加压注射装置
    • US20090177158A1
    • 2009-07-09
    • US12340920
    • 2008-12-22
    • John F. KRUMMELeslie A. Field
    • John F. KRUMMELeslie A. Field
    • A61M5/155
    • A61M5/2053A61M5/14244A61M5/14526A61M5/16881A61M5/20A61M2005/3128A61M2205/6081
    • An apparatus includes a medicament container and an actuator assembly coupled to a proximal end portion of the medicament container. A distal end portion of the medicament container is configured to be coupled to a needle. A piston is movably disposed within the medicament container such that the medicament container is divided into a first internal portion and a second internal portion, the first internal portion containing a medicament. The actuator assembly has a pressurized fluid container, a regulator and a bias member. The pressurized fluid container is configured to move relative to the medicament container between a first position and a second position. The regulator is configured to fluidically couple the pressurized fluid container and the second internal portion of the medicament container when the pressurized fluid container is in the second position. The bias member is configured to bias the pressurized fluid container in the first position.
    • 一种装置包括药物容器和联接到药物容器的近端部分的致动器组件。 药物容器的远端部分被配置为联接到针。 活塞可移动地设置在药物容器内,使得药物容器被分成第一内部部分和第二内部部分,第一内部部分包含药物。 致动器组件具有加压流体容器,调节器和偏置构件。 加压流体容器构造成在第一位置和第二位置之间相对于药物容器移动。 调节器构造成当加压流体容器处于第二位置时流体耦合加压流体容器和药物容器的第二内部部分。 偏置构件构造成在第一位置偏压加压流体容器。
    • 32. 发明授权
    • Fabrication of suspended structures using a sacrificial layer
    • 使用牺牲层制造悬挂结构
    • US06547973B2
    • 2003-04-15
    • US08688337
    • 1996-07-30
    • Leslie A. Field
    • Leslie A. Field
    • B81R500
    • G01F1/6845G01L9/0042
    • A method for fabricating a suspended structure including a layer of membrane material over a substrate. The suspended structure overlies a cavity in the substrate. The method starts by generating a sacrificial layer comprising a first material that can withstand temperatures typically encountered in subsequent conventional semiconductor processing steps. In the preferred embodiment of the present invention, the bond between sacrificial layer and the underlying substrate must be capable of withstanding temperatures greater than the Si—Al eutectic point. A layer of membrane material is then deposited over the sacrificial layer. The membrane material comprises a second material different from the first material. An opening is introduced in the layer of membrane material thereby exposing the sacrificial layer. A first etchant is applied to the sacrificial layer through the opening until the sacrificial layer is removed leaving a portion of the cavity. The first etchant is chosen such that the first etchant removes the first material more rapidly than the second material. Finally, a second etchant is introduced into the cavity to expand the cavity. The second etchant is chosen such that the second etchant removes the substrate more rapidly than the second material. The first material is preferably PSG, thermal silicon dioxide, low temperature oxide, or tungsten.
    • 一种在衬底上制造包括膜材料层的悬浮结构的方法。 悬浮结构覆盖在衬底中的空腔。 该方法开始于生成牺牲层,该牺牲层包括能够承受随后的常规半导体处理步骤中通常遇到的温度的第一材料。 在本发明的优选实施例中,牺牲层和底层衬底之间的接合必须能承受大于Si-Al共晶点的温度。 然后在牺牲层上沉积一层膜材料。 膜材料包括不同于第一材料的第二材料。 在膜材料层中引入开口,从而暴露牺牲层。 通过开口将第一蚀刻剂施加到牺牲层,直到消除牺牲层留下空腔的一部分。 选择第一蚀刻剂使得第一蚀刻剂比第二材料更快地去除第一材料。 最后,将第二蚀刻剂引入空腔中以扩大空腔。 选择第二蚀刻剂使得第二蚀刻剂比第二材料更快地除去衬底。 第一种材料优选为PSG,二氧化硅热,低温氧化物或钨。