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31. 发明授权

US06765238B2 Material systems for semiconductor tunnel-junction structures 失效
标题翻译：半导体隧道结结构材料系统
公开(公告)号：US06765238B2
公开(公告)日：2004-07-20
申请号：US10243520
申请日：2002-09-12
申请人： Yin-Lan Chang , Ashish Tandon , Michael H. Leary , Michael R. T. Tan
发明人： Yin-Lan Chang , Ashish Tandon , Michael H. Leary , Michael R. T. Tan
IPC分类号： H01L2988
CPC分类号： B82Y20/00 , H01S5/0421 , H01S5/18308 , H01S5/18313 , H01S5/3095 , H01S5/32366 , H01S5/34306 , Y10S257/918
摘要： The tunnel junction structure comprises a p-type tunnel junction layer of a first semiconductor material, an n-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. At least one of the semiconductor materials includes gallium (Ga), arsenic (As) and either nitrogen (N) or antimony (Sb). The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer.
摘要翻译：隧道结结构包括第一半导体材料的p型隧道结层，第二半导体材料的n型隧道结层和隧道结层之间的隧道结。至少一种半导体材料包括镓（Ga），砷（As）和氮（N）或锑（Sb）。通过形成隧道结结构的隧道结结构，隧道结的电压降明显增加，并且通过形成具有p型隧道结层的材料的价带能量与 n型隧道结层的导带能量。

32. 发明授权

US07372886B2 High thermal conductivity vertical cavity surface emitting laser (VCSEL) 有权
标题翻译：高导热性垂直腔表面发射激光器（VCSEL）
公开(公告)号：US07372886B2
公开(公告)日：2008-05-13
申请号：US10862753
申请日：2004-06-07
申请人： Yoon K. Song , Michael H. Leary , Michael R. T. Tan
发明人： Yoon K. Song , Michael H. Leary , Michael R. T. Tan
IPC分类号： H01S5/00 , H01S3/04 , H01S3/08
CPC分类号： H01S5/02461 , H01S5/0425 , H01S5/18308 , H01S5/18327
摘要： A light generating device such as a VCSEL includes a light generation layer, a top reflector, a bottom reflector, and a high thermal conductivity (HTC) layer between the light generation layer and the bottom reflector. The light generation layer is adapted to generate light having a first wavelength. Heat produced at the light generation layer is more efficiently dissipated due to the presence of the HTC layer. Alternatively, a light generating device such as a VCSEL includes a light generation layer, a top reflector, and a high thermal conductivity (HTC) bottom reflector. Heat produced at the light generation layer is more efficiently dissipated due to the fact that the bottom reflector is a HTC DBR reflector having lower thermal resistivity than a conventional DBR reflector.
摘要翻译：诸如VCSEL的发光装置在光产生层和底部反射器之间包括光产生层，顶部反射器，底部反射器和高热导率（HTC）层。光产生层适于产生具有第一波长的光。由于HTC层的存在，在光产生层产生的热更有效地消散。或者，诸如VCSEL的发光装置包括光产生层，顶反射器和高热导率（HTC）底反射器。由于底部反射器是具有比常规DBR反射器低的热电阻率的HTC DBR反射器的事实，在光产生层产生的热量更有效地消散。

33. 发明授权

US07358523B2 Method and structure for deep well structures for long wavelength active regions 失效
标题翻译：长波长活性区深井结构的方法和结构
公开(公告)号：US07358523B2
公开(公告)日：2008-04-15
申请号：US10970528
申请日：2004-10-20
申请人： Michael R. T. Tan , Ashish Tandon , David P. Bour
发明人： Michael R. T. Tan , Ashish Tandon , David P. Bour
IPC分类号： H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01S5/34 , B82Y20/00 , H01L33/06 , H01S5/183 , H01S5/3408 , H01S5/34313 , H01S5/34333
摘要： Subwells are added to quantum wells of light emitting semiconductor structures to shift their emission wavelengths to longer wavelengths. Typical applications of the invention are to InGaAs, InGaAsSb, InP and GaN material systems, for example.
摘要翻译：子阱被添加到发光半导体结构的量子阱中，以将其发射波长移动到更长的波长。本发明的典型应用是例如InGaAs，InGaAsSb，InP和GaN材料体系。

34. 发明授权

US06931044B2 Method and apparatus for improving temperature performance for GaAsSb/GaAs devices 有权
标题翻译：用于提高GaAsSb / GaAs器件温度性能的方法和装置
公开(公告)号：US06931044B2
公开(公告)日：2005-08-16
申请号：US10368274
申请日：2003-02-18
申请人： David P. Bour , Michael R. T. Tan , Ying-Lan Chang
发明人： David P. Bour , Michael R. T. Tan , Ying-Lan Chang
IPC分类号： H01S5/20 , H01L33/06 , H01S5/00 , H01S5/183 , H01S5/323 , H01S5/34 , H01S5/343
CPC分类号： H01S5/183 , B82Y20/00 , H01L33/06 , H01S5/3422 , H01S5/34306 , H01S5/34353
摘要： A method and apparatus is provided for improving the temperature performance of GaAsSb materials utilizing an AlGaInP confinement structure. An active region containing a GaAsSb quantum well layer and (In)GaAs barrier layers is sandwiched between two AlGaInP confinement layers. AlGaInP confinement structures provide sufficient electron confinement, thereby improving the stability of the threshold current with respect to increasing temperature for GaAsSb/GaAs heterostructures.
摘要翻译：提供了一种利用AlGaInP约束结构来改善GaAsSb材料的温度性能的方法和装置。包含GaAsSb量子阱层和（In）GaAs势垒层的有源区夹在两个AlGaInP限制层之间。 AlGaInP约束结构提供了足够的电子限制，从而提高了GaAsSb / GaAs异质结构相对于增加温度的阈值电流的稳定性。

35. 发明授权

US08315526B2 Misalignment tolerant free space optical transceiver 有权
标题翻译：不对准自由空间光收发器
公开(公告)号：US08315526B2
公开(公告)日：2012-11-20
申请号：US11820299
申请日：2007-06-18
申请人： Michael R. T. Tan , David A. Fattal , Terrel Morris
发明人： Michael R. T. Tan , David A. Fattal , Terrel Morris
IPC分类号： H04B10/00
CPC分类号： H04B10/803
摘要： In accordance with an aspect of the invention, a system has a transmitter and a receiver, where the transmitter includes a beam source and an optical element. The beam source produces a beam that represents information, and the optical element alters the beam so that the beam has a uniform intensity over a cross-sectional area. The receiver is separated from the transmitter by free space through which the beam propagates and includes an active area positioned to receive a portion of the beam that the receiver converts into a received signal. To accommodate possible misalignment, the cross-sectional area of the beam is larger than the active area by an amount that accommodates a range of misalignment of the receiver with the transmitter.
摘要翻译：根据本发明的一个方面，系统具有发射器和接收器，其中发射器包括光束源和光学元件。光束源产生表示信息的光束，并且光学元件改变光束，使得光束在横截面积上具有均匀的强度。接收机通过自由空间与发射机分离，射束通过该空间传播，并且包括被定位为接收接收机转换成接收信号的波束的一部分的有源区域。为了适应可能的未对准，波束的横截面面积大于有效区域，其量适应接收器与发射器的不对准范围。

36. 发明授权

US07577172B2 Active region of a light emitting device optimized for increased modulation speed operation 有权
标题翻译：针对增加的调制速度操作优化的发光器件的有源区域
公开(公告)号：US07577172B2
公开(公告)日：2009-08-18
申请号：US11143374
申请日：2005-06-01
申请人： Ashish Tandon , Kostadin Djordjev , Chao-Kun Lin , Michael R. T. Tan
发明人： Ashish Tandon , Kostadin Djordjev , Chao-Kun Lin , Michael R. T. Tan
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/3407
摘要： In accordance with the invention, increased maximum modulation speeds and improved hole distribution are obtained for light emitting devices. Barrier layers of a quantum well structure for a light emitting device are formed with varying barrier energy heights. Quantum well layers of the quantum well structure are formed between the barrier layers.
摘要翻译：根据本发明，获得了用于发光器件的增加的最大调制速度和改善的孔分布。用于发光器件的量子阱结构的阻挡层形成具有变化的势垒能量高度。在阻挡层之间形成量子阱结构的量子阱层。

37. 发明授权

US07215848B2 Optical isolator utilizing a micro-resonator 失效
标题翻译：光隔离器利用微谐振器
公开(公告)号：US07215848B2
公开(公告)日：2007-05-08
申请号：US10768858
申请日：2004-01-29
申请人： Michael R. T. Tan , William Trutna , David P. Bour , Michael H. Leary
发明人： Michael R. T. Tan , William Trutna , David P. Bour , Michael H. Leary
IPC分类号： G02B6/26
CPC分类号： G02B6/29335 , G02B6/12007 , G02B6/2746 , G02B2006/12097 , G02B2006/12104 , G02F1/0955 , G02F2203/15
摘要： An optical isolator for coupling light from a first waveguide to a second waveguide is disclosed. The optical isolator utilizes a resonator coupled to the first and second optical waveguides. The resonator has a resonance at λ for light traveling from the first optical waveguide to the second optical waveguide; however, the resonator does not have a resonance at λ for light traveling from the second waveguide to the first waveguide. The resonator can use a layer of ferromagnetic material in an applied magnetic field. The magnetic field within the ferromagnetic material varies in strength and/or direction over the layer of ferromagnetic material. The magnetic field can be generated by an external magnetic field that varies over the layer of ferromagnetic material. Alternatively, the resonator can include a layer of ferromagnetic metal that overlies a portion of the layer of ferromagnetic material and a constant external magnetic field.
摘要翻译：公开了一种用于将来自第一波导的光耦合到第二波导的光隔离器。光隔离器利用耦合到第一和第二光波导的谐振器。谐振器对于从第一光波导到第二光波导的光的λ具有谐振; 然而，对于从第二波导传播到第一波导的光，谐振器在λ处不具有谐振。谐振器可以在施加的磁场中使用铁磁材料层。铁磁材料内的磁场在铁磁材料层上的强度和/或方向上变化。磁场可以由在铁磁材料层上变化的外部磁场产生。或者，谐振器可以包括铁磁金属层，其覆盖铁磁材料层的一部分和恒定的外部磁场。

38. 发明授权

US07034331B2 Material systems for semiconductor tunnel-junction structures 失效
标题翻译：半导体隧道结结构材料系统
公开(公告)号：US07034331B2
公开(公告)日：2006-04-25
申请号：US10861144
申请日：2004-06-04
申请人： Ying-Lan Chang , Ashish Tandon , Michael H. Leary , Michael R. T. Tan
发明人： Ying-Lan Chang , Ashish Tandon , Michael H. Leary , Michael R. T. Tan
IPC分类号： H01L29/06
CPC分类号： B82Y20/00 , H01S5/0421 , H01S5/18308 , H01S5/18313 , H01S5/3095 , H01S5/32366 , H01S5/34306 , Y10S257/918
摘要： The tunnel junction structure comprises a p-type tunnel junction layer of a first semiconductor material, an n-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. At least one of the semiconductor materials includes gallium (Ga), arsenic (As) and either nitrogen (N) or antimony (Sb). The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer.
摘要翻译：隧道结结构包括第一半导体材料的p型隧道结层，第二半导体材料的n型隧道结层和隧道结层之间的隧道结。至少一种半导体材料包括镓（Ga），砷（As）和氮（N）或锑（Sb）。通过形成隧道结结构的隧道结结构，隧道结的电压降明显增加，并且通过形成具有p型隧道结层的材料的价带能量与 n型隧道结层的导带能量。

39. 发明授权

US06878970B2 Light-emitting device having element(s) for increasing the effective carrier capture cross-section of quantum wells 有权
标题翻译：具有用于增加量子阱的有效载流子捕获截面的元件的发光器件
公开(公告)号：US06878970B2
公开(公告)日：2005-04-12
申请号：US10418408
申请日：2003-04-17
申请人： David P. Bour , Michael H. Leary , Ying-Lan Chang , Yoon-Kyu Song , Michael R. T. Tan , Tetsuya Takeuchi , Danielle Chamberlin
发明人： David P. Bour , Michael H. Leary , Ying-Lan Chang , Yoon-Kyu Song , Michael R. T. Tan , Tetsuya Takeuchi , Danielle Chamberlin
IPC分类号： H01S5/343 , H01L33/06 , H01L33/10 , H01L33/32 , H01L33/00 , H01L29/06
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01L33/105
摘要： Light-emitting devices are described. One example of a light-emitting device includes a first barrier layer and a second barrier layer, and a quantum well layer located between the first and second barrier layers. The first and second barrier layers are composed of gallium arsenide, and the quantum well layer is composed of indium gallium arsenide nitride. A first layer is located between the quantum well layer and the first barrier layer. The first layer has a bandgap energy between that of the first barrier layer and that of the quantum well layer. Another example of a light-emitting device includes a quantum well and a carrier capture element adjacent the quantum well. The carrier capture element increases the effective carrier capture cross-section of the quantum well.
摘要翻译：描述发光器件。发光器件的一个示例包括第一阻挡层和第二阻挡层，以及位于第一和第二阻挡层之间的量子阱层。第一和第二阻挡层由砷化镓构成，量子阱层由氮化铟镓组成。第一层位于量子阱层和第一阻挡层之间。第一层在第一阻挡层和量子阱层的能隙之间具有带隙能。发光器件的另一示例包括量子阱和邻近量子阱的载流子俘获元件。载体捕获元素增加量子阱的有效载流子俘获截面。

40. 发明授权

US06756325B2 Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region 有权
标题翻译：用于制造长波长砷化镓镓（InGaAsN）活性区的方法
公开(公告)号：US06756325B2
公开(公告)日：2004-06-29
申请号：US10140625
申请日：2002-05-07
申请人： David P. Bour , Tetsuya Takeuchi , Ashish Tandon , Ying-Lan Chang , Michael R. T. Tan , Scott Corzine
发明人： David P. Bour , Tetsuya Takeuchi , Ashish Tandon , Ying-Lan Chang , Michael R. T. Tan , Scott Corzine
IPC分类号： H01L2100
CPC分类号： C30B25/02 , C30B29/403 , H01L21/02395 , H01L21/02463 , H01L21/02507 , H01L21/0254 , H01L21/02546 , H01L21/0262 , H01L33/007 , H01L33/105 , H01S5/32366 , Y10S438/936 , Y10S438/938 , Y10S438/956
摘要： Several methods for producing an active region for a long wavelength light emitting device are disclosed. In one embodiment, the method comprises placing a substrate in an organometallic vapor phase epitaxy (OMVPE) reactor, the substrate for supporting growth of an indium gallium arsenide nitride (InGaAsN) film, supplying to the reactor a group-III-V precursor mixture comprising arsine, dimethylhydrazine, alkyl-gallium, alkyl-indium and a carrier gas, where the arsine and the dimethylhydrazine are the group-V precursor materials and where the percentage of dimethylhydrazine substantially exceeds the percentage of arsine, and pressurizing the reactor to a pressure at which a concentration of nitrogen commensurate with light emission at a wavelength longer than 1.2 um is extracted from the dimethylhydrazine and deposited on the substrate.
摘要翻译：公开了用于制造用于长波长发光器件的有源区的几种方法。在一个实施方案中，该方法包括将衬底放置在有机金属气相外延（OMVPE）反应器中，该衬底用于支持砷化铟镓氮化物（InGaAsN）膜的生长，向反应器供应III-V族前体混合物，其包含胂，二甲基肼，烷基镓，烷基铟和载气，其中胂和二甲基肼是Ⅴ族前体材料，其中二甲基肼的百分比基本上超过胂的百分比，并将反应器加压至其中与二氧化肼的二氧化氮中提取出长于1.2μm的波长的发光相当的氮浓度并沉积在基板上。

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