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31. 发明申请

US20050094939A1 Interfacing multiple wavelength sources to thin optical waveguides utilizing evanescent coupling 有权
标题翻译：使用ev逝耦合将多个波长源连接到薄光波导上
公开(公告)号：US20050094939A1
公开(公告)日：2005-05-05
申请号：US10935146
申请日：2004-09-07
申请人： Margaret Ghiron , Prakash Gothoskar , Robert Montgomery , Vipulkumar Patel , Soham Pathak , Kalpendu Shastri , Katherine Yanushefski
发明人： Margaret Ghiron , Prakash Gothoskar , Robert Montgomery , Vipulkumar Patel , Soham Pathak , Kalpendu Shastri , Katherine Yanushefski
IPC分类号： G02B20060101 , G02B6/34
CPC分类号： G02B6/12007 , G02B6/124 , G02B6/34
摘要： An arrangement for achieving and maintaining high efficiency coupling of light between a multi-wavelength optical signal and a relatively thin (e.g., sub-micron) silicon optical waveguide uses a prism coupler in association with an evanescent coupling layer. A grating structure having a period less than the wavelengths of transmission is formed in the coupling region (either formed in the silicon waveguide, evanescent coupling layer, prism coupler, or any combination thereof) so as to increase the effective refractive index “seen” by the multi-wavelength optical signal in the area where the beam exiting/entering the prism coupler intercepts the waveguide surface (referred to as the “prism coupling surface”). The period and/or duty cycle of the grating can be controlled to modify the effective refractive index profile in the direction away from the coupling region so as to reduce the effective refractive index from the relatively high value useful in multi-wavelength coupling to the lower value associated with maintaining confinement of the optical signals within the surface waveguide structure, thus reducing reflections along the transition region.
摘要翻译：用于实现和维持多波长光信号和较薄（例如亚微米）硅光波导之间的高效率耦合的布置使用与渐逝耦合层相关联的棱镜耦合器。在耦合区域（形成在硅波导，ev逝耦合层，棱镜耦合器或其任何组合中）形成具有小于透射波长的周期的光栅结构，以便通过“看到”来提高有效折射率离开/进入棱镜耦合器的光束截取波导表面（称为“棱镜耦合表面”）的区域中的多波长光信号。可以控制光栅的周期和/或占空比以在远离耦合区域的方向上改变有效折射率分布，以便将有效折射率从在多波长耦合中的有用折射率降低到较低的值与保持表面波导结构内的光信号的限制相关联的值，从而减少沿着过渡区域的反射。

32. 发明申请

US20050094938A1 External grating structures for interfacing wavelength-division-multiplexed optical sources with thin optical waveguides 有权
标题翻译：用于将波分复用光源与薄光波导接口连接的外部光栅结构
公开(公告)号：US20050094938A1
公开(公告)日：2005-05-05
申请号：US10935145
申请日：2004-09-07
申请人： Margaret Ghiron , Prakash Gothoskar , Robert Montgomery , Vipulkumar Patel , Soham Pathak , Kalpendu Shastri , Katherine Yanushefski
发明人： Margaret Ghiron , Prakash Gothoskar , Robert Montgomery , Vipulkumar Patel , Soham Pathak , Kalpendu Shastri , Katherine Yanushefski
IPC分类号： G02B20060101 , G02B6/34
CPC分类号： G02B6/12007 , G02B6/122 , G02B6/29311 , G02B6/34
摘要： A coupling arrangement for allowing multiple wavelengths to be coupled into and out of a relatively thin silicon optical waveguide layer utilizes a diffractive optical element, in the form of a volume phase grating, in combination with a prism coupling structure. The diffractive optical element is formed to comprise a predetermined modulation index sufficient to diffract the various wavelengths through angles associated with improving the coupling efficiency of each wavelength into the silicon waveguide. The diffractive optical element may be formed as a separate element, or formed as an integral part of the coupling facet of the prism coupler.
摘要翻译：用于允许多个波长耦合到相对薄的硅光波导层中的耦合布置利用体积相位光栅的形式的衍射光学元件与棱镜耦合结构组合。衍射光学元件被形成为包括足以将各种波长衍射成与提高每个波长到硅波导的耦合效率相关联的角度的预定调制指数。衍射光学元件可以形成为单独的元件，或者形成为棱镜耦合器的耦合面的整体部分。

33. 发明申请

US20060140645A1 High-speed, silicon-based electro-optic modulator with feedback control 有权
标题翻译：具有反馈控制功能的高速硅基电光调制器
公开(公告)号：US20060140645A1
公开(公告)日：2006-06-29
申请号：US11362305
申请日：2006-02-22
申请人： Kalpendu Shastri , Prakash Gothoskar , Margaret Ghiron , Vipulkumar Patel , Robert Montgomery , Soham Pathak , Katherine Yanushefski
发明人： Kalpendu Shastri , Prakash Gothoskar , Margaret Ghiron , Vipulkumar Patel , Robert Montgomery , Soham Pathak , Katherine Yanushefski
IPC分类号： H04B10/04 , H04B10/12
CPC分类号： G02F1/025 , G02F1/0121 , G02F1/225 , G02F2001/0152 , H04B10/505 , H04B10/58
摘要： An electro-optic modulator arrangement for achieving switching speeds greater than 1 Gb/s utilizes pre-emphasis pulses to accelerate the change in refractive index of the optical waveguide used to form the electro-optic modulator. In one embodiment, a feedback loop may be added to use a portion of the modulated optical output signal to adjust the magnitude and duration of the pre-emphasis pulses, as well as the various reference levels used for modulated. For free carrier-based electro-optic modulators, including silicon-based electro-optic modulators, the pre-emphasis pulses are used to accelerate the movement of free carriers at the transitions between input signal data values.
摘要翻译：用于实现大于1Gb / s的开关速度的电光调制器装置利用预加重脉冲来加速用于形成电光调制器的光波导的折射率变化。在一个实施例中，可以添加反馈回路以使用调制的光输出信号的一部分来调整预加重脉冲的幅度和持续时间以及用于调制的各种参考电平。对于基于硅的电光调制器的自由载体的电光调制器，预加重脉冲用于加速在输入信号数据值之间的转变处的自由载流子的移动。

34. 发明申请

US20050236619A1 CMOS-compatible integration of silicon-based optical devices with electronic devices 审中-公开
公开(公告)号：US20050236619A1
公开(公告)日：2005-10-27
申请号：US11169932
申请日：2005-06-29
申请人： Vipulkumar Patel , Margaret Ghiron , Prakash Gothoskar , Robert Montgomery , Kalpendu Shastri , Soham Pathak , Katherine Yanushefski
发明人： Vipulkumar Patel , Margaret Ghiron , Prakash Gothoskar , Robert Montgomery , Kalpendu Shastri , Soham Pathak , Katherine Yanushefski
IPC分类号： H01L27/12 , H01L27/144 , H01L29/04
CPC分类号： H01L27/1443 , H01L27/1203
摘要： A conventional CMOS fabrication technique is used to integrate the formation of passive optical devices and active electro-optic devices with standard CMOS electrical devices on a common SOI structure. The electrical devices and optical devices share the same surface SOI layer (a relatively thin, single crystal silicon layer), with various required semiconductor layers then formed over the SOI layer. In some instances, a set of process steps may be used to simultaneously form regions in both electrical and optical devices. Advantageously, the same metallization process is used to provide electrical connections to the electrical devices and the active electro-optic devices.

35. 发明申请

US20050201683A1 Silicon nanotaper couplers and mode-matching devices 有权
标题翻译：硅纳米器耦合器和模式匹配器件
公开(公告)号：US20050201683A1
公开(公告)日：2005-09-15
申请号：US11054205
申请日：2005-02-09
申请人： Margaret Ghiron , Prakash Gothoskar , Robert Montgomery , Vipulkumar Patel , Soham Pathak , Kalpendu Shastri , Katherine Yanushefski
发明人： Margaret Ghiron , Prakash Gothoskar , Robert Montgomery , Vipulkumar Patel , Soham Pathak , Kalpendu Shastri , Katherine Yanushefski
IPC分类号： G02B6/122 , G02B6/14 , G02B6/26 , G02B6/34 , G02B6/42
CPC分类号： G02B6/1228 , G02B6/4204
摘要： An arrangement for providing optical coupling between a free-space propagating optical signal and an ultrathin silicon waveguide formed in an upper silicon layer of a silicon-on-insulator (SOI) structure includes a silicon nanotaper structure formed in the upper silicon layer (SOI layer) of the SOI structure and coupled to the ultrathin silicon waveguide. A dielectric waveguide coupling layer, with a refractive index greater than the index of the dielectric insulating layer but less than the refractive index of silicon, is disposed so as to overly a portion of the dielectric insulating layer in a region where an associated portion of the SOI layer has been removed. An end portion of the dielectric waveguide coupling layer is disposed to overlap an end section of the silicon nanotaper to form a mode conversion region between the free-space propagating optical signal and the ultrathin silicon waveguide. A free-space optical coupling arrangement (such as a prism or grating) is disposed over the dielectric waveguide coupling layer and used to couple a propagating optical signal between free space and the dielectric waveguide coupling layer and thereafter into the ultrathin silicon waveguide.
摘要翻译：用于在自由空间传播的光信号和形成在绝缘体上硅（SOI））结构的上硅层中的超薄硅波导之间提供光耦合的装置包括形成在上硅层（SOI层）中的硅纳米锥结构）和耦合到超薄硅波导。具有大于介电绝缘层的折射率但小于硅的折射率的折射率的介质波导耦合层被布置成过度地在介电绝缘层的一部分中的相关部分 SOI层已被去除。电介质波导耦合层的端部设置成与硅纳米锥的端部部分重叠以在自由空间传播的光信号和超薄硅波导之间形成模式转换区域。自由空间光耦合装置（诸如棱镜或光栅）设置在介质波导耦合层之上，用于将传播的光信号耦合在自由空间与介质波导耦合层之间，然后耦合到超薄硅波导中。

36. 发明授权

US07447395B2 Silicon modulator offset tuning arrangement 有权
标题翻译：硅调制器偏移调谐布置
公开(公告)号：US07447395B2
公开(公告)日：2008-11-04
申请号：US11810591
申请日：2007-06-06
申请人： Robert Keith Montgomery , Margaret Ghiron , Prakash Gothoskar , Paulius Mindaugas Mosinskis , Vipulkumar Patel , Kalpendu Shastri , Mark Webster
发明人： Robert Keith Montgomery , Margaret Ghiron , Prakash Gothoskar , Paulius Mindaugas Mosinskis , Vipulkumar Patel , Kalpendu Shastri , Mark Webster
IPC分类号： G02B6/12 , G02F1/295
CPC分类号： G02F1/025 , G02F1/0147 , G02F1/225 , G02F2201/126
摘要： A silicon-based optical modulator structure includes one or more separate localized heating elements for changing the refractive index of an associated portion of the structure and thereby providing corrective adjustments to address unwanted variations in device performance. Heating is provided by thermo-optic devices such as, for example, silicon-based resistors, silicide resistors, forward-biased PN junctions, and the like, where any of these structures may easily be incorporated with a silicon-based optical modulator. The application of a DC voltage to any of these structures will generate heat, which then transfers into the waveguiding area. The increase in local temperature of the waveguiding area will, in turn, increase the refractive index of the waveguiding in the area. Control of the applied DC voltage results in controlling the refractive index.
摘要翻译：基于硅的光学调制器结构包括一个或多个单独的局部加热元件，用于改变结构的相关部分的折射率，从而提供校正调整以解决器件性能的不期望的变化。加热由诸如硅基电阻器，硅化物电阻器，正向偏置PN结等的热光器件提供，其中这些结构中的任何一种可以容易地与硅基光学调制器结合。对这些结构中的任何一个施加直流电压将产生热量，然后传递到波导区域。波导区域的局部温度的增加又将增加该区域中波导的折射率。施加的直流电压的控制导致控制折射率。

37. 发明申请

US20070292075A1 Silicon modulator offset tuning arrangement 有权
标题翻译：硅调制器偏移调谐布置
公开(公告)号：US20070292075A1
公开(公告)日：2007-12-20
申请号：US11810591
申请日：2007-06-06
申请人： Robert Keith Montgomery , Margaret Ghiron , Prakash Gothoskar , Paulius Mindaugas Mosinskis , Vipulkumar Patel , Kalpendu Shastri , Mark Webster
发明人： Robert Keith Montgomery , Margaret Ghiron , Prakash Gothoskar , Paulius Mindaugas Mosinskis , Vipulkumar Patel , Kalpendu Shastri , Mark Webster
IPC分类号： G02B6/12
CPC分类号： G02F1/025 , G02F1/0147 , G02F1/225 , G02F2201/126
摘要： A silicon-based optical modulator structure includes one or more separate localized heating elements for changing the refractive index of an associated portion of the structure and thereby providing corrective adjustments to address unwanted variations in device performance. Heating is provided by thermo-optic devices such as, for example, silicon-based resistors, silicide resistors, forward-biased PN junctions, and the like, where any of these structures may easily be incorporated with a silicon-based optical modulator. The application of a DC voltage to any of these structures will generate heat, which then transfers into the waveguiding area. The increase in local temperature of the waveguiding area will, in turn, increase the refractive index of the waveguiding in the area. Control of the applied DC voltage results in controlling the refractive index
摘要翻译：基于硅的光学调制器结构包括一个或多个单独的局部加热元件，用于改变结构的相关部分的折射率，从而提供校正调整以解决器件性能的不期望的变化。加热由诸如硅基电阻器，硅化物电阻器，正向偏置PN结等的热光器件提供，其中这些结构中的任何一种可以容易地与硅基光学调制器结合。对这些结构中的任何一个施加直流电压将产生热量，然后传递到波导区域。波导区域的局部温度的增加又将增加该区域中波导的折射率。施加的直流电压的控制导致控制折射率

38. 发明申请

US20080105940A1 SOI-based inverse nanotaper optical detector 审中-公开
标题翻译：基于SOI的反向纳米光学检测器
公开(公告)号：US20080105940A1
公开(公告)日：2008-05-08
申请号：US11811799
申请日：2007-06-12
申请人： David Piede , Vipulkumar Patel , Margaret Ghiron , Prakash Gothoskar , Robert Keith Montgomery
发明人： David Piede , Vipulkumar Patel , Margaret Ghiron , Prakash Gothoskar , Robert Keith Montgomery
IPC分类号： H01L31/0232
CPC分类号： H01L31/03529 , H01L31/103 , Y02E10/50
摘要： A photodetector integrated within a silicon-on-insulator (SOI) structure is formed directly upon an inverse nanotaper endface coupling region to reduce polarization sensitivity at the detector's input. The photodetector may be germanium-based PN (PIN) junction photodetector, a SiGe photodetector, a metal/silicon Schottky barrier photodetector, or any other suitable silicon-based photodetector. The inverse nanotaper photodetector may also be formed as an in-line monitoring device, converting only a portion of the in-coupled optical signal and allowing for the remainder to thereafter propagate along an associated optical waveguide.
摘要翻译：集成在绝缘体上硅（SOI）结构中的光电检测器直接形成在反向纳米锥端面耦合区域上，以降低检测器输入处的偏振灵敏度。光电检测器可以是基于锗的PN（PIN）结光电检测器，SiGe光电检测器，金属/硅肖特基势垒光电检测器或任何其它合适的硅基光电检测器。反向纳米管光电检测器也可以形成为在线监测装置，仅转换一部分耦合内的光信号，并允许剩余部分随后沿相关联的光波导传播。

39. 发明授权

US07941023B2 Ultra low-loss CMOS compatible silicon waveguides 有权
标题翻译：超低损耗CMOS兼容硅波导
公开(公告)号：US07941023B2
公开(公告)日：2011-05-10
申请号：US11890123
申请日：2007-08-03
申请人： Vipulkumar Patel , David Piede , Margaret Ghiron , Prakash Gothoskar
发明人： Vipulkumar Patel , David Piede , Margaret Ghiron , Prakash Gothoskar
IPC分类号： G02B6/10
CPC分类号： G02F1/025 , G02B6/122 , G02B6/1228 , G02B2006/12061 , G02B2006/12097
摘要： A low loss optical waveguiding structure for silicon-on-insulator (SOI)-based arrangements utilizes a tri-material configuration including a rib/strip waveguide formed of a material with a refractive index less than silicon, but greater than the refractive index of the underlying insulating material. In one arrangement, silicon nitride may be used. The index mismatch between the silicon surface layer (the SOI layer) and the rib/strip waveguide results in a majority of the optical energy remaining within the SOI layer, thus reducing scattering losses from the rib/strip structure (while the rib/strip allows for guiding along a desired signal path to be followed). Further, since silicon nitride is an amorphous material without a grain structure, this will also reduce scattering losses. Advantageously, the use of silicon nitride allows for conventional CMOS fabrication processes to be used in forming both passive and active devices.
摘要翻译：用于绝缘体上硅（SOI）的布置的低损耗光波导结构利用三材料构造，其包括由折射率小于硅的材料形成的肋/条波导，但大于底层绝缘材料。在一种布置中，可以使用氮化硅。硅表面层（SOI层）和肋/条形波导之间的折射率失配导致剩余在SOI层内的大部分光学能量，从而减少了肋/条带结构的散射损耗（而肋/条允许用于沿着要遵循的期望信号路径引导）。此外，由于氮化硅是不具有晶粒结构的无定形材料，所以这也将减少散射损耗。有利地，使用氮化硅允许常规CMOS制造工艺用于形成无源器件和有源器件。

40. 发明申请

US20070280616A1 Ultra low-loss CMOS compatible silicon waveguides 有权
标题翻译：超低损耗CMOS兼容硅波导
公开(公告)号：US20070280616A1
公开(公告)日：2007-12-06
申请号：US11890123
申请日：2007-08-03
申请人： Vipulkumar Patel , David Piede , Margaret Ghiron , Prakash Gothoskar
发明人： Vipulkumar Patel , David Piede , Margaret Ghiron , Prakash Gothoskar
IPC分类号： G02B6/10 , H01L21/62
CPC分类号： G02F1/025 , G02B6/122 , G02B6/1228 , G02B2006/12061 , G02B2006/12097
摘要： A low loss optical waveguiding structure for silicon-on-insulator (SOI)-based arrangements utilizes a tri-material configuration including a rib/strip waveguide formed of a material with a refractive index less than silicon, but greater than the refractive index of the underlying insulating material. In one arrangement, silicon nitride may be used. The index mismatch between the silicon surface layer (the SOI layer) and the rib/strip waveguide results in a majority of the optical energy remaining within the SOI layer, thus reducing scattering losses from the rib/strip structure (while the rib/strip allows for guiding along a desired signal path to be followed). Further, since silicon nitride is an amorphous material without a grain structure, this will also reduce scattering losses. Advantageously, the use of silicon nitride allows for conventional CMOS fabrication processes to be used in forming both passive and active devices.
摘要翻译：用于绝缘体上硅（SOI）的布置的低损耗光波导结构利用三材料构造，其包括由折射率小于硅的材料形成的肋/条波导，但大于底层绝缘材料。在一种布置中，可以使用氮化硅。硅表面层（SOI层）和肋/条形波导之间的折射率失配导致剩余在SOI层内的大部分光学能量，从而减少了肋/条带结构的散射损耗（而肋/条允许用于沿着要遵循的期望信号路径引导）。此外，由于氮化硅是不具有晶粒结构的无定形材料，所以这也将减少散射损耗。有利地，使用氮化硅允许常规CMOS制造工艺用于形成无源器件和有源器件。

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