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31. 发明授权

US06387288B1 High selectivity etch using an external plasma discharge 失效
标题翻译：使用外部等离子体放电的高选择性蚀刻
公开(公告)号：US06387288B1
公开(公告)日：2002-05-14
申请号：US09556951
申请日：2000-04-21
申请人： Claes Bjorkman , Hongching Shan , Michael Welch
发明人： Claes Bjorkman , Hongching Shan , Michael Welch
IPC分类号： H01L21302
CPC分类号： H01J37/32871
摘要： An apparatus and method for scavenging etchant species from a plasma formed of etchant gas prior to the etchant gas entering a primary processing chamber of a plasma reactor. There is at least one scavenging chamber, each of which is connected at an inlet thereof to an etchant gas source and at an outlet thereof to a gas distribution device of the primary processing chamber. Each scavenging chamber has a radiation applicator that irradiates the interior of the scavenging chamber and creates a plasma therein from etchant gas flowing through the chamber from the etchant gas source to the gas distribution apparatus of the primary processing chamber. The applicator uses either an inductive discharge, capacitive discharge, direct current (DC) discharge or microwave discharge to irradiate the interior of the scavenging chamber and ignite the plasma. An etchant species scavenging source is also disposed within the scavenging chamber. This source provides scavenging material that interacts with the plasma to scavenge etchant species created by the dissociation of the etchant gas in the plasma and form etch by-products comprised of substances from both the etchant species and the scavenging source. The scavenging chambers can be employed, as is or in a modified form, as excitation chambers to excite gases at optimal conditions and feed the modified gases into the primary chamber. The scavenging chamber is modified by removing its scavenging source if this source would adversely interact with the gas being excited.
摘要翻译：在蚀刻剂气体进入等离子体反应器的初级处理室之前，从蚀刻剂气体形成的等离子体中清除蚀刻剂物质的装置和方法。至少有一个清除室，每个清除室在其入口处连接到蚀刻剂气体源，并在其出口连接到主处理室的气体分配装置。每个清扫室具有辐射施加器，其辐射扫气室的内部，并从流化床中的蚀刻剂气体从蚀刻剂气体源到主处理室的气体分配装置产生等离子体。施加器使用感应放电，电容放电，直流（DC）放电或微波放电来照射扫气室的内部并点燃等离子体。清扫室内还设有一种蚀刻物质清除源。该源提供与等离子体相互作用的清除材料，以清除由等离子体中的蚀刻剂气体解离产生的蚀刻剂物质，并形成由来自蚀刻剂物质和清除源的物质构成的蚀刻副产物。清除室可以按原样或以改进形式用作激发室，以在最佳条件下激发气体并将改性气体进料到主室中。如果该源与被激发的气体不利地相互作用，则通过去除其清除源来改进扫气室。

32. 发明授权

US6113731A Magnetically-enhanced plasma chamber with non-uniform magnetic field 失效
标题翻译：具有不均匀磁场的磁增强等离子体室
公开(公告)号：US6113731A
公开(公告)日：2000-09-05
申请号：US735444
申请日：1997-01-02
申请人： Hongching Shan , Roger Lindley , Claes Bjorkman , Xue Yu Qian , Richard Plavidal , Bryan Pu , Ji Ding , Zongyu Li , Kuang-Han Ke , Michael Welch
发明人： Hongching Shan , Roger Lindley , Claes Bjorkman , Xue Yu Qian , Richard Plavidal , Bryan Pu , Ji Ding , Zongyu Li , Kuang-Han Ke , Michael Welch
IPC分类号： H05H1/46 , H01J37/32 , H01L21/00 , H01L21/02 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/687 , C23F1/02
CPC分类号： H01L21/67069 , H01J37/32623 , H01J37/3266 , H01L21/68735
摘要： A plasma chamber having a magnet which produces a magnetic field such that, within a region parallel to and adjacent to the workpiece, the direction of the magnetic field is approximately the vector cross product of (i) the gradient of the magnitude of the magnetic field, and (ii) a vector extending perpendicularly from the workpiece surface toward the plasma. Alternatively, the plasma chamber includes a north magnetic pole and a south magnetic pole located at distinct azimuths around the periphery of the workpiece. The azimuth of the south magnetic pole relative to the north magnetic pole is clockwise around the central axis, and each magnetic pole faces a direction which is more toward than away from a central axis of the workpiece area. An additional aspect of the invention is a plasma chamber having a rotating magnetic field produced by electromagnets spaced around the periphery of the workpiece which receive successive fixed amounts of electrical current during successive time intervals. During each transition between the time intervals, the current supplied to each electromagnet is changed relatively slowly or relatively quickly according to whether the current change includes a change in polarity.
摘要翻译：具有磁体的等离子体室产生磁场，使得在与工件平行并邻近工件的区域内，磁场的方向近似为（i）磁场强度梯度的矢量交叉积，和（ii）从工件表面朝向等离子体垂直延伸的矢量。或者，等离子体室包括北磁极和位于工件周围的不同方位角处的南磁极。南磁极相对于北磁极的方位角是围绕中心轴顺时针旋转的，每个磁极面对的方向远离工件区域的中心轴线。本发明的另一方面是等离子体室，其具有由围绕工件周边间隔开的电磁体产生的旋转磁场，其在连续的时间间隔期间接收连续的固定量的电流。在时间间隔期间的每个转换期间，根据电流变化是否包括极性变化，提供给每个电磁体的电流相对缓慢或相对较快地改变。

33. 发明授权

US5400651A Apparatus for interface measurement in a storage tank 失效
标题翻译：用于存储罐中界面测量的装置
公开(公告)号：US5400651A
公开(公告)日：1995-03-28
申请号：US252142
申请日：1994-06-01
申请人： Michael Welch
发明人： Michael Welch
IPC分类号： G01F23/26 , G01F23/28 , G01F23/284
CPC分类号： G01F23/284
摘要： An apparatus and method for measuring the water level at the bottom of a storage tank, the water level being the product-water interface between product and water within the storage tank. The apparatus includes a sensor assembly which is located at the tank bottom. The assembly has a plurality of measurement sensors arranged in a housing having slots for product and water to enter and leave the housing. Each measurement sensor is an open-circuited co-axial transmission line with a probe at its open end which functions as a monopole antenna. In preferred embodiments, the transmission lines are quarter wavelength open-circuited coaxial transmission lines. Each probe is located at a different distance from the tank bottom to cover a measurement range. The transmission lines are excited with signals which are reflected by the probes. As the level of the product-water interface changes on the probes, the capacitance of the probes also change which, in turn, change the amplitude or voltage level of the reflected signals. The voltage measurements are converted to level by a microprocessor.
摘要翻译：用于测量储罐底部水位的装置和方法，水位是储罐内产品与水之间的产品 - 水界面。该装置包括位于罐底部的传感器组件。组件具有多个测量传感器，其布置在壳体中，该壳体具有用于产品和水进入和离开壳体的槽。每个测量传感器是一个开路的同轴传输线，其开口端具有探头，用作单极天线。在优选实施例中，传输线是四分之一波长的开路同轴传输线。每个探头位于与罐底部不同的距离以覆盖测量范围。传输线被由探针反射的信号激发。随着探针上产品 - 水界面的水平变化，探针的电容也会发生变化，从而改变了反射信号的幅度或电压电平。电压测量由微处理器转换为电平。

34. 发明授权

US08329686B2 Isatin analogues and uses therefor 有权
标题翻译：靛红类似物及其用途
公开(公告)号：US08329686B2
公开(公告)日：2012-12-11
申请号：US11847330
申请日：2007-08-29
申请人： Robert H. Mach , Michael Welch , Wenhua Chu , Justin Rothfuss
发明人： Robert H. Mach , Michael Welch , Wenhua Chu , Justin Rothfuss
IPC分类号： A61K31/4439 , A61K31/404 , C07D401/14 , C07D403/12
CPC分类号： C07D403/14 , A61K51/0446 , A61K51/0455 , C07D403/12
摘要： Novel isatin analogues, including isatin analogues comprising Michael Acceptors (IMAs) are disclosed. Further disclosed are methods of synthesis of the isatin analogues, and uses of the analogues, including inhibition of caspase-3 and caspase-7, and in vivo imaging of apoptosis by Positron emission tomography (PET) or Single Photon Emission Computed Tomography (SPECT).
摘要翻译：公开了包括Michael受体（IMA）的靛红类似物的新型靛红类似物。进一步公开的是靛红类似物的合成方法，以及通过正电子发射断层扫描（PET）或单光子发射计算机断层扫描（SPECT）技术对胱天蛋白酶-3和半胱天冬酶-7的抑制以及细胞凋亡的体内成像的方法，。

35. 发明授权

US07906540B2 Non-nucleoside reverse transcriptase inhibitors 失效
标题翻译：非核苷逆转录酶抑制剂
公开(公告)号：US07906540B2
公开(公告)日：2011-03-15
申请号：US12079649
申请日：2008-03-28
申请人： Zachary Kevin Sweeney , Michael Welch
发明人： Zachary Kevin Sweeney , Michael Welch
IPC分类号： A61K31/4196 , C07D249/12
CPC分类号： C07D249/12
摘要： Compounds of formula I, wherein R1, R2, R3, R4, R5, X, Y, and Ar are as defined herein or pharmaceutically acceptable salts thereof, inhibit HIV-1 reverse transcriptase and afford a method for prevention and treatment of HIV-1 infections and the treatment of AIDS and/or ARC. The present invention also relates to compositions containing compounds of formula I useful for the prevention and treatment of HIV-1 infections and the treatment of AIDS and/or ARC.
摘要翻译：其中R1，R2，R3，R4，R5，X，Y和Ar如本文所定义的式I化合物或其药学上可接受的盐抑制HIV-1逆转录酶，并提供预防和治疗HIV-1的方法感染和治疗艾滋病和/或ARC。本发明还涉及含有用于预防和治疗HIV-1感染和治疗AIDS和/或ARC的式I化合物的组合物。

36. 发明申请

US20100278751A1 RADIOLABELED 2-AMINO-4-ALKYL-6-(HALOALKYL)PYRIDINE COMPOUNDS AND THEIR USE IN DIAGNOSTIC IMAGING 审中-公开
标题翻译：放射性2-氨基-4-烷基-6-（HALOALKYL）吡啶化合物及其在诊断成像中的应用
公开(公告)号：US20100278751A1
公开(公告)日：2010-11-04
申请号：US12771040
申请日：2010-04-30
申请人： Robert H. Mach , Dong Zhou , Michael Welch
发明人： Robert H. Mach , Dong Zhou , Michael Welch
IPC分类号： A61K49/04 , C07D401/04 , A61P43/00
CPC分类号： C07D213/73 , A61K51/0455
摘要： Radiolabeled 2-amino-4-alkyl-6-(haloalkyl)pyridine compounds are disclosed. In some aspects, the compounds bind to inducible nitric oxide synthase (iNOS) with high specificity. In some configurations, a compound comprising a radioisotope can be used for diagnostic imaging of iNOS distribution in a mammalian subject such as a human, using a scanning method such as positron emission tomography (PET scanning). Methods of synthesis of the compounds are also disclosed.
摘要翻译：公开了放射性标记的2-氨基-4-烷基-6-（卤代烷基）吡啶化合物。在一些方面，化合物以高特异性结合诱导型一氧化氮合酶（iNOS）。在一些配置中，包括放射性同位素的化合物可以用于使用诸如正电子发射断层摄影（PET扫描）的扫描方法在诸如人类的哺乳动物受试者中iNOS分布的诊断成像。还公开了合成方法。

37. 发明申请

US20070091535A1 TEMPERATURE CONTROLLED SEMICONDUCTOR PROCESSING CHAMBER LINER 审中-公开
标题翻译：温度控制半导体加工室内衬
公开(公告)号：US20070091535A1
公开(公告)日：2007-04-26
申请号：US11561112
申请日：2006-11-17
申请人： Hamid Noorbakhsh , Siamak Salimian , Paul Luscher , James Carducci , Evans Lee , Kaushik Vaidya , Hongqing Shan , Michael Welch
发明人： Hamid Noorbakhsh , Siamak Salimian , Paul Luscher , James Carducci , Evans Lee , Kaushik Vaidya , Hongqing Shan , Michael Welch
IPC分类号： H01H47/26 , H01H47/32 , H01H50/12
CPC分类号： C23C16/45563 , C23C16/4401 , C23C16/4411 , H01J37/32522 , H01J37/32623 , H01J37/32633 , H01J2237/2001
摘要： A thermally controlled chamber liner comprising a passage having an inlet and outlet adapted to flow a fluid through the one or more fluid passages formed at least partially therein. The chamber liner may comprise a first liner, a second liner or both a first liner and a second liner. The thermally controlled chamber liner maintains a predetermined temperature by running fluid from a temperature controlled, fluid source through the fluid passages. By maintaining a predetermined temperature, deposition of films on the chamber liner is discouraged and particulate generation due to stress cracking of deposited films is minimized.
摘要翻译：一种热控腔室衬套，其包括具有入口和出口的通道，其适于使流体流过至少部分地形成在其中的一个或多个流体通道。腔室衬套可以包括第一衬垫，第二衬垫或第一衬垫和第二衬垫两者。热控腔室衬里通过将流体从温度受控的流体源流过流体通道来维持预定的温度。通过保持预定的温度，阻止膜在室衬里上的沉积，并且由于沉积膜的应力开裂引起的颗粒的产生被最小化。

38. 发明申请

US20050201505A1 Enhanced separation process for (76Br, 77Br and 124I) preparation and recovery of each 审中-公开
标题翻译：（76Br，77Br和124I）的分离过程加强了每个的准备和回收
公开(公告)号：US20050201505A1
公开(公告)日：2005-09-15
申请号：US10913950
申请日：2004-08-07
申请人： Michael Welch , Lucie Tang , Douglas Rowland
发明人： Michael Welch , Lucie Tang , Douglas Rowland
IPC分类号： B01D20060101 , G21G1/06
CPC分类号： H05H6/00 , G21G1/10
摘要： An automated process for preparing and recovering 76Br, 77Br and 124I comprises (I) bombarding enriched 76 or 77Se or enriched 124Te with a beam of protons on a targeted disk respectively to produce 76Br, 77Br and 124I respectively wherein the target is selected from (a) a round tungsten disk with a depression at its center and (b) an inclined target having about a 20° inclination with respect to the beam direction and (II) recovering the 76Br, 77Br and 124I in an automated process comprising by placing the irradiated target face up in a quartz tube in the center of a high temperature furnace utilizing a target holder and heating the irradiated target sufficient to release and recover 76Br, 77Br and 124I therefrom.
摘要翻译：用于制备和回收76 Br，76 Br和124的自动化方法包括（I）轰击富集的76或77 / 在目标盘上分别具有一束质子束的SUP> Se或富集的124 Te，以产生76 Br Br，以及< 其目标选自（a）在其中心具有凹陷的圆形钨盘，（b）相对于光束方向具有大约20度倾斜的倾斜目标，（II）回收在自动化过程中包括通过将照射的目标物体朝上放置在石英管的中心位置的自动化过程中，将76 Br，77 Br和124 I 高温炉利用目标保持器并加热照射的靶足以释放并从其中回收和/或从其中回收和/或从其中回收。

39. 发明申请

US20050003675A1 Dielectric etch chamber with expanded process window 审中-公开
标题翻译：介质蚀刻室具有扩展的工艺窗口
公开(公告)号：US20050003675A1
公开(公告)日：2005-01-06
申请号：US10863590
申请日：2004-06-07
申请人： James Carducci , Hamid Noorbakhsh , Evans Lee , Bryan Pu , Hongqing Shan , Claes Bjorkman , Siamak Salimian , Paul Luscher , Michael Welch
发明人： James Carducci , Hamid Noorbakhsh , Evans Lee , Bryan Pu , Hongqing Shan , Claes Bjorkman , Siamak Salimian , Paul Luscher , Michael Welch
IPC分类号： H01J37/32 , H01L21/00 , H01L21/311 , H01L21/60 , H01L21/683 , H01L21/687 , H01L21/768 , C23F1/00
CPC分类号： H01L21/6875 , H01J37/32522 , H01L21/31116 , H01L21/67069 , H01L21/6833 , H01L21/68757 , H01L21/68785 , H01L21/68792 , H01L21/76802 , H01L21/76807 , H01L21/76897 , H01L2924/3011
摘要： A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.
摘要翻译：一种用于在低于大气压的衬底的等离子体蚀刻处理的电容耦合反应器包括限定处理容积的室主体，设置在室主体上的盖，盖是第一电极，设置在处理容积中的衬底支撑件，并且包括第二电极耦合到所述第一和第二电极中的至少一个电极的射频源，配置成将处理气体输送到所述处理容积中的处理气体入口，以及具有至少1600升/分钟的抽运能力的抽空泵系统。较大的泵送能力控制工艺气体的停留时间，以便调节分解成更具反应活性的物质的程度。

40. 发明授权

US06267549B1 Dual independent robot blades with minimal offset 失效
标题翻译：双独立机器人刀片，最小偏移
公开(公告)号：US06267549B1
公开(公告)日：2001-07-31
申请号：US09088965
申请日：1998-06-02
申请人： William Brown , Michael Welch
发明人： William Brown , Michael Welch
IPC分类号： B25J1804
CPC分类号： B25J9/107 , H01L21/67742
摘要： A wafer handling robot system (10) operates in a wafer chamber (40) and comprises two independent robot blades, an upper blade (18) surmounting a lower blade (26). A pair of wafers (28, 32) are supported and positioned at the outer ends (78) of the upper and lower blades (18, 26). The upper robot blade (18) keeps an upper wafer (28) at a level just above the level at which the lower robot blade (26) keeps a lower wafer (32). Because the wafers are virtually at the same level, the same wafer lift mechanism can be used in the wafer chamber to lift and remove or replace the wafers on the two blades. By offsetting the height of the wafers by minimal amounts, the throughput of the system can be increased by up to a factor of two over a single robot blade system, particularly if the robot is the limiting factor on throughput. This throughput enhancement represents a substantial gain with a relatively simple and inexpensive addition to the equipment.
摘要翻译：晶片处理机器人系统（10）在晶片室（40）中操作并且包括两个独立的机器人刀片，上部刀片（18），其覆盖下部刀片（26）。一对晶片（28,32）被支撑并定位在上和下叶片（18,26）的外端（78）处。上部机器人刀片（18）将上部晶片（28）保持在刚好在下部机器人刀片（26）保持下部晶片（32）的水平面上方的水平面上。因为晶片实际上处于相同的水平，所以可以在晶片室中使用相同的晶片提升机构来提升和移除或更换两个叶片上的晶片。通过将晶片的高度最小化，通过单个机器人刀片系统可以将系统的吞吐量提高高达2倍，特别是如果机器人是吞吐量的限制因素。这种吞吐量增加代表了相当大的增益，相对简单和便宜的设备添加。

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