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    • 32. 发明申请
    • Intermediate transfer belt and image forming apparatus and image forming method using the same and method of manufacturing the same
    • 中间转印带和成像装置及使用其的成像方法及其制造方法
    • US20050249529A1
    • 2005-11-10
    • US11114026
    • 2005-04-26
    • Yuuji NatoriMinoru Matsuo
    • Yuuji NatoriMinoru Matsuo
    • G03G15/16G03G15/01
    • G03G15/1685G03G2215/1623
    • An intermediate transfer belt, an image forming apparatus including the belt, and method for making the belt, the method including: transferring a mixture of a solution of a thermosetting resin and a particulate electroconductive material into a centrifugal mold; rotating the centrifugal mold to form a film attached to an inner periphery thereof; thermally imidizing the film to have an imidization ratio not greater than 98%; and drawing the film to entirely harden the film and to form the intermediate transfer belt. The intermediate transfer belt may be used in an electrophotographic image forming process in which a toner image of each color formed on plurality of image bearing members is overlappingly transferred to the intermediate transfer belt to form a multi-colored image thereon. The multi-colored image is transferred to a transfer material.
    • 中间转印带,包括该带的图像形成装置及其制造方法,该方法包括:将热固性树脂和颗粒状导电材料的溶液的混合物转移到离心模具中; 旋转离心模具以形成附着于其内周的膜; 使酰亚胺化率不大于98%的亚胺化膜; 并拉伸薄膜以完全硬化薄膜并形成中间转印带。 中间转印带可用于电子照相图像形成工艺中,其中形成在多个图像承载部件上的每种颜色的调色剂图像重叠地转印到中间转印带上,以在其上形成多色图像。 多色图像被转印到转印材料上。
    • 34. 发明授权
    • Method of manufacturing semiconductor device, method of manufacturing active matrix substrate, and electrooptic device
    • 制造半导体器件的方法,制造有源矩阵衬底的方法和电光器件
    • US06306693B1
    • 2001-10-23
    • US09657901
    • 2000-09-08
    • Hideto IshiguroMinoru MatsuoHiroyuki MuraiMasami Hayashi
    • Hideto IshiguroMinoru MatsuoHiroyuki MuraiMasami Hayashi
    • H01L2100
    • H01L27/127H01L27/1214H01L27/1255H01L29/66757H01L29/78621H01L2029/7863
    • To provide a method of manufacturing a semiconductor device, a method of manufacturing an active matrix substrate, and an electrooptic device in which in forming different type TFTs on the same substrate, a variation in the LDD length or offset length of TFT can be suppressed by a small number of steps. In the method of manufacturing an active matrix substrate, a patterning mask 554 used for forming gate electrodes 15 and 25 is left, and used in introducing a medium concentration of phosphorus ion to introduce impurities in self alignment with the patterning mask 554. Next, with the patterning mask 554 removed, low-concentration of phosphorus ion is introduced by using the gate electrodes 15 and 25 as a mask to form low-concentration source-drain regions 111, 121, 211 and 221 in self alignment with the gate electrodes 15 and 25. The LDD length of each of the regions is equal to the amount of side etching caused in patterning the gate electrodes 15 and 25.
    • 为了提供一种制造半导体器件的方法,制造有源矩阵衬底的方法和电光器件,其中在同一衬底上形成不同类型的TFT时,TFT的LDD长度或偏移长度的变化可以通过 少数步骤。 在制造有源矩阵基板的方法中,留下用于形成栅电极15和25的图形掩模554,用于引入中等浓度的磷离子以引入与图案化掩模554自对准的杂质。接下来, 去除图案化掩模554,通过使用栅电极15和25作为掩模来引入低浓度的磷离子,以形成与栅电极15自对准的低浓度源极 - 漏极区域111,121,211和221,以及 每个区域的LDD长度等于在图案化栅电极15和25时引起的侧蚀刻量。