专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US08558211B2 Switching element and method for manufacturing switching element 有权
标题翻译：开关元件及开关元件制造方法
公开(公告)号：US08558211B2
公开(公告)日：2013-10-15
申请号：US12295282
申请日：2007-03-26
申请人： Toshitsugu Sakamoto , Noriyuki Iguchi , Naoki Banno , Hisao Kawaura
发明人： Toshitsugu Sakamoto , Noriyuki Iguchi , Naoki Banno , Hisao Kawaura
IPC分类号： H01L47/00
CPC分类号： H01L45/085 , G11C13/0009 , G11C13/02 , G11C2213/56 , H01L27/2436 , H01L45/12 , H01L45/1206 , H01L45/1233 , H01L45/1266 , H01L45/146 , H01L45/1625 , H01L45/1675
摘要： A switching element of the present invention utilizes electro-chemical reactions to operate, and comprises ion conductive layer 54 capable of conducting metal ions, first electrode 49 arranged in contact with the ion conductive layer, and second electrode 58 for supplying metal ions to the ion conductive layer, wherein an oxygen absorption layer 55 which contains a material more prone to oxidization than the second electrode is formed in contact with the second electrode.
摘要翻译：本发明的开关元件利用电化学反应进行操作，并且包括能够导电金属离子的离子导电层54，与离子传导层接触地布置的第一电极49和用于向离子提供金属离子的第二电极58 导电层，其中形成与第二电极接触的含有比第二电极更容易氧化的材料的氧吸收层55。

32. 发明授权

US08242478B2 Switching device, semiconductor device, programmable logic integrated circuit, and memory device 有权
标题翻译：开关器件，半导体器件，可编程逻辑集成电路和存储器件
公开(公告)号：US08242478B2
公开(公告)日：2012-08-14
申请号：US12306657
申请日：2007-06-25
申请人： Toshitsugu Sakamoto
发明人： Toshitsugu Sakamoto
IPC分类号： H01L45/00
CPC分类号： H01L27/24 , H01L27/2472 , H01L45/085 , H01L45/1206 , H01L45/1233 , H01L45/1266 , H01L45/146
摘要： A typical switching device according to the present invention comprises first insulating layer 1003 having an opening and made of a material for preventing metal ions from being diffused, first electrode 104 disposed in the opening and including a material capable of supplying the metal ions, ion conduction layer 105 disposed in contact with an upper surface of the first electrode 104 and capable of conducting the metal ions, and second electrode 106 disposed in contact with an upper surface of the ion conduction layer 105 and including a region made of a material incapable of the metal ions. A voltage is applied between the first electrode 104 and the second electrode 106 for controlling a conduction state between the first electrode 104 and the second electrode 106.
摘要翻译：根据本发明的典型的开关装置包括具有开口并由用于防止金属离子扩散的材料制成的第一绝缘层1003，设置在开口中的第一电极104，并且包括能够提供金属离子的材料，离子传导层105，其与第一电极104的上表面接触并且能够导电金属离子;以及第二电极106，其设置成与离子传导层105的上表面接触，并且包括由不能金属离子。在第一电极104和第二电极106之间施加电压，以控制第一电极104和第二电极106之间的导通状态。

33. 发明授权

US08203133B2 Switching element, reconfigurable logic integrated circuit and memory element 有权
标题翻译：开关元件，可重构逻辑集成电路和存储器元件
公开(公告)号：US08203133B2
公开(公告)日：2012-06-19
申请号：US11813065
申请日：2005-12-27
申请人： Toshitsugu Sakamoto , Hisao Kawaura , Hiroshi Sunamura , Naoki Banno
发明人： Toshitsugu Sakamoto , Hisao Kawaura , Hiroshi Sunamura , Naoki Banno
IPC分类号： H01L29/04
CPC分类号： H01L45/085 , H01L27/10 , H01L27/118 , H01L45/1206 , H01L45/1226 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： The switching element of the present invention is of a configuration that includes: an ion conduction layer (40) that includes an oxide, a first electrode (21) and a second electrode (31) that are provided in contact with the ion conduction layer (40) and that are connected by the precipitate of metal that is supplied from the outside or for which electrical properties change due to the dissolution of precipitated metal, and a third electrode (35) provided in contact with the ion conduction layer (40) and that can supply metal ions. The use of this configuration allows the switching voltage to be set higher than in the related art.
摘要翻译：本发明的开关元件具有以下结构：包括氧化物的离子传导层（40），设置成与离子传导层接触的第一电极（21）和第二电极（31） 40），并且由于从外部供应的金属沉淀物或由于沉淀金属的溶解而导致电特性变化的金属沉淀物和与离子传导层（40）接触设置的第三电极（35）和可以提供金属离子。使用该配置允许将开关电压设置为高于现有技术中的开关电压。

34. 发明授权

US07989924B2 Switching element, programmable logic integrated circuit and memory element 有权
标题翻译：开关元件，可编程逻辑集成电路和存储元件
公开(公告)号：US07989924B2
公开(公告)日：2011-08-02
申请号：US11430844
申请日：2006-05-10
申请人： Toshitsugu Sakamoto , Noriyuki Iguchi , Hiroshi Sunamura
发明人： Toshitsugu Sakamoto , Noriyuki Iguchi , Hiroshi Sunamura
IPC分类号： H01L29/12
CPC分类号： H01L45/1266 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/146 , H01L45/1625 , H03K17/687
摘要： A switching element with a switching voltage set higher than conventional, which includes an ion conduction layer including tantalum oxide, a first electrode provided in contact with the ion conduction layer, and a second electrode provided in contact with the ion conduction layer and capable of supplying the ion conduction layer with metal ions.
摘要翻译：一种具有高于常规的开关电压的开关元件，其包括包括氧化钽的离子传导层，与离子传导层接触的第一电极，以及与离子传导层接触并提供的第二电极离子传导层与金属离子。

35. 发明授权

US07960712B2 Switching element, switching element drive method and fabrication method, reconfigurable logic integrated circuit, and memory element 有权
标题翻译：开关元件，开关元件驱动方法和制造方法，可重构逻辑集成电路和存储元件
公开(公告)号：US07960712B2
公开(公告)日：2011-06-14
申请号：US11722982
申请日：2005-12-22
申请人： Toshitsugu Sakamoto , Hisao Kawaura
发明人： Toshitsugu Sakamoto , Hisao Kawaura
IPC分类号： H01L47/00
CPC分类号： H01L45/085 , H01L23/5252 , H01L27/2436 , H01L45/1206 , H01L45/1226 , H01L45/1233 , H01L45/1253 , H01L45/1266 , H01L45/142 , H01L45/1683 , H01L2924/0002 , H01L2924/00
摘要： The switching element of the present invention includes: an ion conduction layer (4) in which metal ions can move freely; a first electrode (1) that contacts the ion conduction layer (4); and a second electrode (2) that contacts the ion conduction layer (4), that is formed such that the ion conduction layer (4) is interposed between the first electrode (1) and the second electrode (2), and that supplies metal ions to the ion conduction layer (4) or that receives metal ions from the ion conduction layer (4) to cause precipitation of the metal that corresponds to the metal ions. An introduction path (5) composed of the metal and of a prescribed width is further provided on the ion conduction layer (4) for electrically connecting the first electrode (1) and the second electrode (2). The application of voltage to the first electrode (1) relative to the second electrode (2) then causes an electrochemical reaction between the introduction path (5) and the second electrode (2) whereby the electrical characteristics are switched.
摘要翻译：本发明的开关元件包括：离子传导层（4），其中金属离子可以自由移动; 接触离子传导层（4）的第一电极（1）; 以及与所述离子传导层（4）接触的第二电极（2），其被形成为使得所述离子传导层（4）插入在所述第一电极（1）和所述第二电极（2）之间，并且提供金属离子到离子传导层（4），或者从离子传导层（4）接收金属离子以引起对应于金属离子的金属的析出。在金属离子导电层（4）上进一步设置由金属构成的规定宽度的导入路径（5），用于电连接第一电极（1）和第二电极（2）。相对于第二电极（2）向第一电极（1）施加电压然后在引入路径（5）和第二电极（2）之间引起电化学反应，由此切换电特性。

36. 发明授权

US07875883B2 Electric device using solid electrolyte 有权
标题翻译：电器使用固体电解质
公开(公告)号：US07875883B2
公开(公告)日：2011-01-25
申请号：US10490598
申请日：2002-09-24
申请人： Toshitsugu Sakamoto , Masakazu Aono , Tsuyoshi Hasegawa , Tomonobu Nakayama , Kazuya Terabe , Hisao Kawaura , Tadahiko Sugibayashi
发明人： Toshitsugu Sakamoto , Masakazu Aono , Tsuyoshi Hasegawa , Tomonobu Nakayama , Kazuya Terabe , Hisao Kawaura , Tadahiko Sugibayashi
IPC分类号： H01L29/06
CPC分类号： G11C13/0011 , G11C13/0069 , G11C2013/009 , G11C2213/15 , G11C2213/72 , G11C2213/77 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L45/085 , H01L45/1206 , H01L45/1233 , H01L45/142 , H01L45/16 , H01L45/1633
摘要： The present invention relates to a transistor for selecting a storage cell and a switch using a solid electrolyte. In a storage cell, a metal is stacked on a drain diffusion layer of a field-effect transistor formed on a semiconductor substrate surface. The solid electrolyte using the metal as a carrier is stacked on the metal. The solid electrolyte contacts with the metal via a gap, and the metal is connected to a common grounding conductor. A source of the field-effect transistor is connected to a column address line, and a gate of the field-effect transistor is connected to a row address line.
摘要翻译：本发明涉及用于选择存储单元的晶体管和使用固体电解质的开关。在存储单元中，在形成在半导体衬底表面上的场效应晶体管的漏极扩散层上堆叠金属。使用金属作为载体的固体电解质堆叠在金属上。固体电解质通过间隙与金属接触，并且金属连接到公共接地导体。场效应晶体管的源极连接到列地址线，并且场效应晶体管的栅极连接到行地址线。

37. 发明授权

US07750332B2 Solid electrolyte switching device, FPGA using same, memory device, and method for manufacturing solid electrolyte switching device 有权
公开(公告)号：US07750332B2
公开(公告)日：2010-07-06
申请号：US10512571
申请日：2003-04-25
申请人： Toshitsugu Sakamoto , Masakazu Aono , Tsuyoshi Hasegawa , Tomonobu Nakayama , Hiroshi Sunamura , Hisao Kawaura , Naohiko Sugibayashi
发明人： Toshitsugu Sakamoto , Masakazu Aono , Tsuyoshi Hasegawa , Tomonobu Nakayama , Hiroshi Sunamura , Hisao Kawaura , Naohiko Sugibayashi
IPC分类号： H01L47/00
CPC分类号： G11C13/0011 , G11C2213/15 , G11C2213/56 , G11C2213/79 , H01L27/101 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/142 , H01L45/144 , H01L45/1633 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a solid electrolyte switching device, which can maintain an on or off state when the power source is removed, the resistance of which in on the state is low, and which is capable of integration and re-programming, and FPGA and a memory device using the same, and a method of manufacturing the same.A solid electrolyte switching device (10, 10′, 20, 20′) comprises a substrate (11) in which surface is coated with an insulation layer, a first interconnection layer (13) set on said substrate (11), an ion supplying layer (17) set on said first interconnection layer (13), a solid electrolyte layer (16) set on said ion supplying layer (17), an interlevel insulating layer (12) having a via hole set to cover said first interconnection layer (13), said ion supplying layer (17), and said solid electrolyte layer (16), a counter electrode layer (15) set to contact said solid electrolyte layer (16) through the via hole of said interlevel insulating layer (12), and a second interconnection layer (14) set to cover said counter electrode layer (15). The switching device can be provided in which the on state, or the off state can be arbitrarily set by the threshold voltage applied between the ion supplying layer (17) and the counter electrode layer (15), which is non-volatile, and the resistance of which in the on state is low. The switching device of the present invention is also simple and fine in structure, and hence makes it possible to provide smaller switching devices than are currently available. Further, using the switching device of the present invention as the switching device of an FPGA (30) makes it possible to provide re-programmable and fast operation FPGA (30). Using the switching device of the present invention as a memory cell of a memory device makes it possible to provide a non-volatile memory device with high programming and reading speed.

38. 发明申请

US20090289371A1 SWITCHING ELEMENT AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：切换元件及其制造方法
公开(公告)号：US20090289371A1
公开(公告)日：2009-11-26
申请号：US12097468
申请日：2006-12-15
申请人： Toshitsugu Sakamoto
发明人： Toshitsugu Sakamoto
IPC分类号： H01L49/00 , H01L27/10 , H01L21/02
CPC分类号： H01L27/101 , H01L45/085 , H01L45/124 , H01L45/142 , H01L45/1658 , H01L45/1666
摘要： A switching element includes a first electrode, a second electrode, an ionic conductive portion and a buffer portion. The first electrode is configured to be available to feed metal ions. The ionic conductive portion is configured to contact the first electrode and the second electrode, and include an ionic conductor in which the metal ions are movable. The buffer portion is configured to have a smaller hardness than the ionic conductor, and be located between the first electrode and the second electrode along the ionic conductive portion. Electrical characteristics are switched by depositing or melting metal between said first electrode and said second electrode based on a potential difference between said first electrode and said second electrode.
摘要翻译：开关元件包括第一电极，第二电极，离子导电部分和缓冲部分。第一电极被配置为可用于进料金属离子。离子导电部分被配置为接触第一电极和第二电极，并且包括其中金属离子可移动的离子导体。缓冲部分被配置为具有比离子导体更小的硬度，并且沿着离子导电部位于第一电极和第二电极之间。基于所述第一电极和所述第二电极之间的电位差，通过在所述第一电极和所述第二电极之间沉积或熔化金属来切换电特性。

39. 发明申请

US20070285148A1 Switching Element, Reconfigurable Logic Integrated Circuit And Memory Element 有权
标题翻译：开关元件，可重构逻辑集成电路和存储元件
公开(公告)号：US20070285148A1
公开(公告)日：2007-12-13
申请号：US11813065
申请日：2005-12-27
申请人： Toshitsugu Sakamoto , Hisao Kawaura , Hiroshi Sunamura , Naoki Banno
发明人： Toshitsugu Sakamoto , Hisao Kawaura , Hiroshi Sunamura , Naoki Banno
IPC分类号： H03K17/00
CPC分类号： H01L45/085 , H01L27/10 , H01L27/118 , H01L45/1206 , H01L45/1226 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： The switching element of the present invention is of a configuration that includes: an ion conduction layer (40) that includes an oxide, a first electrode (21) and a second electrode (31) that are provided in contact with the ion conduction layer (40) and that are connected by the precipitate of metal that is supplied from the outside or for which electrical properties change due to the dissolution of precipitated metal, and a third electrode (35) provided in contact with the ion conduction layer (40) and that can supply metal ions. The use of this configuration allows the switching voltage to be set higher than in the related art.
摘要翻译：本发明的开关元件具有以下结构：包括氧化物的离子传导层（40），设置成与离子传导层接触的第一电极（21）和第二电极（31） 40），并且由于从外部供应的金属沉淀物或由于沉淀金属的溶解而导致电特性变化的金属沉淀物和与离子传导层（40）接触设置的第三电极（35）和可以提供金属离子。使用该配置允许将开关电压设置为高于现有技术中的开关电压。

40. 发明授权

US07116573B2 Switching element method of driving switching element rewritable logic integrated circuit and memory 有权
标题翻译：驱动开关元件可重写逻辑集成电路和存储器的开关元件方法
公开(公告)号：US07116573B2
公开(公告)日：2006-10-03
申请号：US10531224
申请日：2004-07-16
申请人： Toshitsugu Sakamoto , Hisao Kawaura , Hiroshi Sunamura
发明人： Toshitsugu Sakamoto , Hisao Kawaura , Hiroshi Sunamura
IPC分类号： G11C11/00
CPC分类号： G11C13/0011 , G11C13/0069 , G11C2013/009 , G11C2213/15 , G11C2213/79 , H01L27/101 , H01L27/2436 , H01L45/085 , H01L45/1206 , H01L45/1266 , H01L45/142 , H01L45/1633
摘要： A switching element has an ion conductor capable of conducting metal ions for use in an electrochemical reaction therein, a first electrode and a second electrode which are disposed in contact with said ion conductor and spaced a predetermined distance from each other, and a third electrode disposed in contact with the ion conductor. When a voltage for causing the switching element to transit to an on state is applied to the third electrode, metal is precipitated between the first electrode and the second electrode by metal ions, electrically interconnecting the first electrode and the second electrode. When a voltage for causing the switching element to transit to an off state is applied to the third electrode, the precipitated metal is dissolved to electrically disconnect the first electrode and the second electrode from each other.
摘要翻译：开关元件具有能够导电金属离子用于其中的电化学反应的离子导体，第一电极和第二电极，它们设置成与所述离子导体接触并彼此隔开预定的距离，第三电极被设置与离子导体接触。当用于使开关元件转换到导通状态的电压被施加到第三电极时，金属通过金属离子在第一电极和第二电极之间沉淀，将第一电极和第二电极互连。当用于使开关元件转移到关闭状态的电压被施加到第三电极时，沉淀的金属被溶解以将第一电极和第二电极彼此电断开。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式