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31. 发明授权

US08278763B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08278763B2
公开(公告)日：2012-10-02
申请号：US13238796
申请日：2011-09-21
申请人： Munehiro Tada , Hiroto Ohtake , Fuminori Ito , Yoshihiro Hayashi , Hironori Yamamoto
发明人： Munehiro Tada , Hiroto Ohtake , Fuminori Ito , Yoshihiro Hayashi , Hironori Yamamoto
IPC分类号： H01L23/48 , H01L23/52
CPC分类号： H01L23/53295 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/0234 , H01L21/31633 , H01L21/76807 , H01L21/76808 , H01L21/76814 , H01L21/76826 , H01L21/76829 , H01L21/76831 , H01L21/76832 , H01L21/76835 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a multilayer wiring technology by which high adhesiveness and high insulation reliability between wirings are obtained, while maintaining effective low capacitance between wirings. A semiconductor device is characterized in that a first insulating film is an insulating film formed of at least one layer which contains a siloxane structure containing silicon, oxygen and carbon; the siloxane structure in the inner part of the first insulating film contains a larger number of carbon atoms than the number of silicon atoms; and a modified layer which containing a smaller number of carbon atoms and a larger number of oxygen atoms per unit volume than the inner part of the first insulating film is formed on at least one of an interface between the first insulating film and the metal and an interface between the first insulating film and a second insulating film.
摘要翻译：本发明提供了一种多层布线技术，其中在布线之间保持有效的低电容的同时获得了布线之间的高粘合性和高绝缘可靠性。半导体器件的特征在于，第一绝缘膜是由至少一层包含含有硅，氧和碳的硅氧烷结构的层形成的绝缘膜; 第一绝缘膜的内部的硅氧烷结构含有比硅原子数多的碳原子数; 并且在第一绝缘膜和金属之间的界面中的至少一个上形成有含有比第一绝缘膜的内部少的碳原子数和更多数量的单位体积的氧原子的改性层，第一绝缘膜和第二绝缘膜之间的界面。

32. 发明授权

US08188600B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08188600B2
公开(公告)日：2012-05-29
申请号：US11571251
申请日：2005-06-24
申请人： Mari Amano , Munehiro Tada , Yoshihiro Hayashi
发明人： Mari Amano , Munehiro Tada , Yoshihiro Hayashi
IPC分类号： H01L23/522
CPC分类号： H01L21/76843 , H01L21/76829 , H01L21/76831 , H01L21/76832 , H01L21/76835 , H01L21/76847 , H01L21/76864 , H01L21/76873
摘要： The present invention provides a semiconductor device which is capable of enhancing adhesion at an interface between a wire-protection film and copper, suppressing dispersion of copper at the interface to avoid electromigration and stress-inducing voids, and having a highly reliable wire. An interlayer insulating film, and a first etching-stopper film are formed on a semiconductor substrate on which a semiconductor device is fabricated. A first alloy-wire covered with a first barrier metal film is formed on the first etching-stopper film by a damascene process. The first alloy-wire is covered at an upper surface thereof with a first wire-protection film. The first wire-protection film covering an upper surface of the first alloy-wire contains at least one metal among metals contained in the first alloy-wire.
摘要翻译：本发明提供一种半导体器件，其能够提高线保护膜与铜之间的界面处的粘附性，抑制铜在界面处的分散，避免电迁移和应力诱导空隙，并具有高可靠性的导线。在其上制造半导体器件的半导体衬底上形成层间绝缘膜和第一蚀刻阻挡膜。通过镶嵌工艺在第一蚀刻阻挡膜上形成被第一阻挡金属膜覆盖的第一合金线。第一合金线在其上表面被第一线保护膜覆盖。覆盖第一合金线的上表面的第一线保护膜包含第一合金线中包含的金属中的至少一种金属。

33. 发明申请

US20060131754A1 Semiconductor device having trench interconnection and manufacturing method of semiconductor device 有权
标题翻译：具有沟槽互连的半导体器件和半导体器件的制造方法
公开(公告)号：US20060131754A1
公开(公告)日：2006-06-22
申请号：US11317399
申请日：2005-12-23
申请人： Hiroto Ohtake , Masayoshi Tagami , Munehiro Tada , Yoshihiro Hayashi
发明人： Hiroto Ohtake , Masayoshi Tagami , Munehiro Tada , Yoshihiro Hayashi
IPC分类号： H01L23/48
CPC分类号： H01L21/76813 , H01L21/31116 , H01L21/31144 , H01L21/3143 , H01L21/31633 , H01L21/76811 , H01L21/76816 , H01L21/76831 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A semiconductor device includes a first interconnection layer and a interlayer insulating layer. The first interconnection layer is formed on a upper side of a substrate, and includes a first interconnection. The interlayer insulating layer is formed on the first interconnection layer, and includes a via connected with the first interconnection at one end of the via and a second interconnection connected with the via at another end of the via. The interlayer insulating layer has a relative dielectric constant lower than that of a silicon oxide film. An upper portion of the interlayer insulating layer includes a silicon-oxide film, a silicon nitride film and a silicon oxide film in order from a lower portion.
摘要翻译：半导体器件包括第一互连层和层间绝缘层。第一互连层形成在基板的上侧，并且包括第一互连。层间绝缘层形成在第一互连层上，并且包括在通孔的一端与第一互连连接的通孔和在通孔的另一端与通孔相连的第二互连。层间绝缘层的相对介电常数比氧化硅膜低。层间绝缘层的上部从下部开始依次包括氧化硅膜，氮化硅膜和氧化硅膜。

34. 发明授权

US08816312B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08816312B2
公开(公告)日：2014-08-26
申请号：US13824098
申请日：2011-09-20
申请人： Munehiro Tada , Makoto Miyamura , Hiromitsu Hada
发明人： Munehiro Tada , Makoto Miyamura , Hiromitsu Hada
IPC分类号： H01L29/00
CPC分类号： H01L45/04 , G11C13/0007 , G11C13/003 , G11C13/0069 , G11C13/04 , G11C2013/0073 , G11C2213/56 , G11C2213/73 , G11C2213/75 , H01L27/101 , H01L27/2436 , H01L27/2463 , H01L45/085 , H01L45/1233 , H01L45/146
摘要： A semiconductor device according to the present invention includes: an unit element which includes a first switch and a second switch, wherein each of the first switch and the second switch includes an electrical resistance changing layer whose state of electrical resistance is changed according to a polarity of an applied voltage, and each of the first switch and the second switch has two electrodes, and wherein one electrode of the first switch and one electrode of the second switch are connected each other to form a common node, and the other electrode of the first switch forms a first node, and the other electrode of the second switch forms a second node; a first wiring which is connected with the first node and forms a signal transmission line; and a second wiring which is connected with the second node and is connected with the first wiring through the unit element.
摘要翻译：根据本发明的半导体器件包括：单元，其包括第一开关和第二开关，其中第一开关和第二开关中的每一个包括电阻变化层，其电阻状态根据极性而改变并且第一开关和第二开关中的每一个具有两个电极，并且其中第一开关的一个电极和第二开关的一个电极彼此连接以形成公共节点，而另一个电极第一开关构成第一节点，第二开关的另一个电极形成第二节点; 第一布线，与第一节点连接并形成信号传输线; 以及与第二节点连接并且通过单元元件与第一布线连接的第二布线。

35. 发明授权

US08796659B2 Variable resistance element, semiconductor device including variable resistance element, and methods for manufacturing variable resistance element and semiconductor device 有权
标题翻译：可变电阻元件，包括可变电阻元件的半导体器件，以及用于制造可变电阻元件和半导体器件的方法
公开(公告)号：US08796659B2
公开(公告)日：2014-08-05
申请号：US13635858
申请日：2011-03-16
申请人： Munehiro Tada , Koichiro Okamoto , Toshitsugu Sakamoto , Hiromitsu Hada
发明人： Munehiro Tada , Koichiro Okamoto , Toshitsugu Sakamoto , Hiromitsu Hada
IPC分类号： H01L29/04
CPC分类号： H01L51/0094 , C23C16/0272 , C23C16/401 , C23C16/50 , C23C16/515 , C23C16/52 , H01L27/2463 , H01L45/1233 , H01L45/14 , H01L45/1616 , H01L51/0591
摘要： A variable resistance element includes a first electrode, a second electrode and an ion conduction layer interposed between the first and second electrodes. The ion conduction layer contains an organic oxide containing at least oxygen and carbon. The carbon concentration distribution in the ion conduction layer is such that the carbon concentration in an area closer to the first electrode is greater than that in an area closer to the second electrode.
摘要翻译：可变电阻元件包括插入在第一和第二电极之间的第一电极，第二电极和离子传导层。离子传导层含有至少含有氧和碳的有机氧化物。离子传导层中的碳浓度分布使得靠近第一电极的区域中的碳浓度大于靠近第二电极的区域中的碳浓度。

36. 发明授权

US09059402B2 Resistance-variable element and method for manufacturing the same 有权
标题翻译：电阻变元件及其制造方法
公开(公告)号：US09059402B2
公开(公告)日：2015-06-16
申请号：US13380092
申请日：2010-06-21
申请人： Munehiro Tada , Toshitsugu Sakamoto , Yuko Yabe , Yukishige Saito , Hiromitsu Hada
发明人： Munehiro Tada , Toshitsugu Sakamoto , Yuko Yabe , Yukishige Saito , Hiromitsu Hada
IPC分类号： H01L45/00 , G11C13/00
CPC分类号： H01L45/1233 , G11C13/0011 , G11C2213/15 , G11C2213/32 , G11C2213/56 , H01L45/085 , H01L45/146 , H01L45/1616 , H01L45/1625
摘要： A resistance-variable element as disclosed has high reliability, high densification, and good insulating properties. The device provides a resistance-variable element in which a first electrode including a metal primarily containing copper, an oxide film of valve-metal, an ion-conductive layer containing oxygen and a second electrode are laminated in this order.
摘要翻译：所公开的电阻可变元件具有高可靠性，高密度化和良好的绝缘性能。该装置提供一种电阻可变元件，其中包括主要包含铜的金属，阀金属的氧化物膜，含氧的离子传导层和第二电极的第一电极按此顺序层压。

37. 发明授权

US09059082B2 Semiconductor device and operation method for same 有权
标题翻译：半导体器件及其操作方法相同
公开(公告)号：US09059082B2
公开(公告)日：2015-06-16
申请号：US13704225
申请日：2011-06-09
申请人： Munehiro Tada , Makoto Miyamura , Hiromitsu Hada
发明人： Munehiro Tada , Makoto Miyamura , Hiromitsu Hada
IPC分类号： H01L29/06 , H01L27/24 , G11C13/00 , H01L27/10 , H01L45/00
CPC分类号： H01L27/2436 , G11C13/0007 , G11C13/0014 , G11C13/003 , G11C13/0069 , G11C2013/0073 , H01L27/101 , H01L27/2463 , H01L27/2472 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/14 , H01L45/146
摘要： A semiconductor device includes a first switching element, a second switching element, and at least one third switching element; wherein the third switching element includes a first terminal and a second terminal, wherein each of the first switching element and the second switching element includes an ion conductor, a first electrode which is disposed so as to have contact with the ion conductor and supplies metal ions to the ion conductor, and a second electrode which is disposed so as to have contact with the ion conductor and is less susceptible to ionization than the first electrode; and wherein (a) the first electrode of the first switching element and the first electrode of the second switching element are electrically connected each other, and the first terminal of the third switching element is electrically connected to only the first electrodes which are electrically connected each other or (b) the second electrode of the first switching element and the second electrode of the second switching element are electrically connected each other, and the first terminal of the third switching element is electrically connected to only the second electrodes which are electrically connected each other.
摘要翻译：半导体器件包括第一开关元件，第二开关元件和至少一个第三开关元件; 其中所述第三开关元件包括第一端子和第二端子，其中所述第一开关元件和所述第二开关元件中的每一个包括离子导体，所述第一电极被设置为与所述离子导体接触并提供金属离子以及第二电极，其设置成与离子导体接触并且比第一电极不易电离; 并且其中（a）第一开关元件的第一电极和第二开关元件的第一电极彼此电连接，并且第三开关元件的第一端子仅电连接到每个电连接的第一电极另一个或（b）第一开关元件的第二电极和第二开关元件的第二电极彼此电连接，并且第三开关元件的第一端子仅电连接到每个电连接的第二电极其他。

38. 发明申请

US20130181180A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20130181180A1
公开(公告)日：2013-07-18
申请号：US13824098
申请日：2011-09-20
申请人： Munehiro Tada , Makoto Miyamura , Hiromitsu Hada
发明人： Munehiro Tada , Makoto Miyamura , Hiromitsu Hada
IPC分类号： H01L45/00
CPC分类号： H01L45/04 , G11C13/0007 , G11C13/003 , G11C13/0069 , G11C13/04 , G11C2013/0073 , G11C2213/56 , G11C2213/73 , G11C2213/75 , H01L27/101 , H01L27/2436 , H01L27/2463 , H01L45/085 , H01L45/1233 , H01L45/146
摘要： A semiconductor device according to the present invention includes: an unit element which includes a first switch and a second switch, wherein each of the first switch and the second switch includes an electrical resistance changing layer whose state of electrical resistance is changed according to a polarity of an applied voltage, and each of the first switch and the second switch has two electrodes, and wherein one electrode of the first switch and one electrode of the second switch are connected each other to form a common node, and the other electrode of the first switch forms a first node, and the other electrode of the second switch forms a second node; a first wiring which is connected with the first node and forms a signal transmission line; and a second wiring which is connected with the second node and is connected with the first wiring through the unit element.
摘要翻译：根据本发明的半导体器件包括：单元，其包括第一开关和第二开关，其中第一开关和第二开关中的每一个包括电阻变化层，其电阻状态根据极性而改变并且第一开关和第二开关中的每一个具有两个电极，并且其中第一开关的一个电极和第二开关的一个电极彼此连接以形成公共节点，而另一个电极第一开关构成第一节点，第二开关的另一个电极形成第二节点; 第一布线，与第一节点连接并形成信号传输线; 以及与第二节点连接并且通过单元元件与第一布线连接的第二布线。

39. 发明申请

US20120280200A1 RESISTANCE CHANGING ELEMENT, SEMICONDUCTOR DEVICE, AND METHOD FOR FORMING RESISTANCE CHANGE ELEMENT 有权
标题翻译：电阻变化元件，半导体器件和形成电阻变化元件的方法
公开(公告)号：US20120280200A1
公开(公告)日：2012-11-08
申请号：US13508243
申请日：2010-11-08
申请人： Munehiro Tada , Koichiro Okamoto , Toshitsugu Sakamoto , Hiromitsu Hada
发明人： Munehiro Tada , Koichiro Okamoto , Toshitsugu Sakamoto , Hiromitsu Hada
IPC分类号： H01L45/00 , H01L51/40
CPC分类号： H01L45/1616 , H01C7/006 , H01C7/18 , H01C17/08 , H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/14 , H01L45/1675
摘要： A resistance changing element according to the present invention comprises a first electrode (101) and a second electrode (103); and an ion conducting layer (102) that is formed between the first electrode (101) and the second electrode (103) and that contains at least oxygen and carbon.
摘要翻译：根据本发明的电阻改变元件包括第一电极（101）和第二电极（103）; 和形成在第一电极（101）和第二电极（103）之间并且至少含有氧和碳的离子传导层（102）。

40. 发明申请

US20110272664A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110272664A1
公开(公告)日：2011-11-10
申请号：US13139602
申请日：2010-01-08
申请人： Munehiro Tada , Toshitsugu Sakamoto , Hiromitsu Hada , Naoki Banno
发明人： Munehiro Tada , Toshitsugu Sakamoto , Hiromitsu Hada , Naoki Banno
IPC分类号： H01L45/00 , H01L21/02
CPC分类号： H01L45/08 , H01L27/101 , H01L27/228 , H01L27/2436 , H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/16 , H01L45/1625 , H01L45/1675
摘要： A semiconductor device comprises a semiconductor substrate; a multilevel wiring layer structure on the semiconductor substrate; and a variable resistance element in the multilevel wiring layer structure, wherein the variable resistance element comprises a variable resistance element film whose resistance changes between a top electrode and a bottom electrode, wherein the multilevel wiring layer structure comprises at least a wiring electrically connected to the bottom electrode and a plug electrically connected to the top electrode, and wherein the wiring also serves as the bottom electrode.
摘要翻译：半导体器件包括半导体衬底; 半导体衬底上的多层布线层结构; 以及所述多层布线层结构中的可变电阻元件，其中所述可变电阻元件包括电阻在顶部电极和底部电极之间变化的可变电阻元件膜，其中所述多层布线层结构至少包括与底部电极和电连接到顶部电极的插头，并且其中布线也用作底部电极。

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