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    • 31. 发明申请
    • Liquid crystal display device using thin-film transistor and method for manufacturing the same
    • 使用薄膜晶体管的液晶显示装置及其制造方法
    • US20060208624A1
    • 2006-09-21
    • US11375072
    • 2006-03-15
    • Yoshikazu Yoshimoto
    • Yoshikazu Yoshimoto
    • G09G3/36H01J1/62
    • G02F1/136286G02F2001/136295H01L27/124H01L27/1285H01L27/1288H01L27/1292
    • The present invention provides a liquid crystal display device using a thin-film transistor, and the invention also provides a method for manufacturing the liquid crystal display device. In openings of a first light transmission type photosensitive resin formed on an insulating substrate, a gate electrode, a source line, and a pixel contact layer are prepared. On these components, a gate insulator, a semiconductor layer, an ohmic contact layer (n+ semiconductor layer) and a protective film are prepared. Further, in openings of a second light transmission type photosensitive resin, a source electrode, a drain electrode, and a pixel electrode are prepared. Also, the crossing portion connecting line formed at the opening of the second light transmission type photosensitive resin is, similarly to the source line or the gate line, made of baked silver produced by baking an ink containing silver fine particles plotted by ink jet process. This makes it possible to simplify the production process and to prevent the increase of wiring resistance of the source line and gate line.
    • 本发明提供一种使用薄膜晶体管的液晶显示装置,本发明还提供一种液晶显示装置的制造方法。 在形成在绝缘基板上的第一透光型光敏树脂的开口中,准备栅电极,源极线和像素接触层。 在这些部件上,制备栅极绝缘体,半导体层,欧姆接触层(n + O +半导体层)和保护膜。 此外,在第二透光型光敏树脂的开口中,准备了源电极,漏电极和像素电极。 而且,形成在第二透光型感光性树脂的开口处的交叉部连接线与源极线或栅极线相同,由通过喷墨喷射法绘制的含有银微粒的油墨而制成的烘烤银制成。 这使得可以简化生产过程并防止源极线和栅极线的布线电阻的增加。
    • 33. 发明授权
    • Liquid crystal display device and method for manufacturing the same
    • 液晶显示装置及其制造方法
    • US07738048B2
    • 2010-06-15
    • US12369220
    • 2009-02-11
    • Yoshikazu Yoshimoto
    • Yoshikazu Yoshimoto
    • G02F1/136
    • G02F1/136286G02F1/1368G02F2001/13606H01L27/12H01L27/124H01L27/1248H01L27/1292
    • The present invention provides a liquid crystal display device to be operated at high speed and with high precision by improving performance of a thin-film transistor without increasing cross capacity of gate lines and data lines. On an upper layer of a gate insulator GI at an intersection of gate lines GL and data lines DL to be prepared on an active matrix substrate SUB1, which makes up a liquid crystal display panel of a liquid crystal display device, an insulating material with low dielectric constant is dropped by ink jet coating method to prepare another insulator LDP in order to improve performance characteristics of the thin-film transistor to be prepared on a silicon semiconductor layer SI without increasing cross capacity on said intersection.
    • 本发明提供了一种通过提高薄膜晶体管的性能而不增加栅极线和数据线的交叉容量而以高速和高精度操作的液晶显示装置。 在构成液晶显示装置的液晶显示面板的有源矩阵基板SUB1上准备的栅极线GL与数据线DL的交叉处的栅极绝缘体GI的上层,具有低的绝缘材料 通过喷墨涂布法降低介电常数,以制备另一种绝缘体LDP,以便改善要在硅半导体层SI上制备的薄膜晶体管的性能特性,而不会增加所述交叉点上的交叉容量。