专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US08022418B2 Composite semiconductor device, LED print head that employs the composite semiconductor device, and image forming apparatus that employs the LED print head 有权
标题翻译：复合半导体器件，采用复合半导体器件的LED打印头以及采用该LED打印头的图像形成装置
公开(公告)号：US08022418B2
公开(公告)日：2011-09-20
申请号：US11737153
申请日：2007-04-19
申请人： Tomohiko Sagimori , Hiroyuki Fujiwara , Mitsuhiko Ogihara , Takahito Suzuki
发明人： Tomohiko Sagimori , Hiroyuki Fujiwara , Mitsuhiko Ogihara , Takahito Suzuki
IPC分类号： H01L33/38
CPC分类号： B41J2/45 , H01L25/0753 , H01L2924/0002 , H01L2924/00
摘要： A composite semiconductor device includes a plurality of semiconductor thin films and a substrate on which the semiconductor thin films are attached. Each semiconductor thin film includes a plurality of semiconductor elements. Each semiconductor element includes a first contact region and a second contact region. The first contact region is connected to a first electrode, and the second contact region is connected to a second electrode. The semiconductor thin film is attached to a substrate such that the plurality of semiconductor elements are aligned in a row, and such that the first contact region and the second contact region are in the row of light emitting elements.
摘要翻译：复合半导体器件包括多个半导体薄膜和其上附着半导体薄膜的衬底。每个半导体薄膜包括多个半导体元件。每个半导体元件包括第一接触区域和第二接触区域。第一接触区域连接到第一电极，并且第二接触区域连接到第二电极。将半导体薄膜附着到基板上，使得多个半导体元件排成一行，并且使得第一接触区域和第二接触区域处于一行发光元件中。

32. 发明授权

US07880190B2 Combined semiconductor device, LED print head, and image forming apparatus 有权
标题翻译：组合半导体器件，LED打印头和成像设备
公开(公告)号：US07880190B2
公开(公告)日：2011-02-01
申请号：US10936515
申请日：2004-09-09
申请人： Mitsuhiko Ogihara , Ichimatsu Abiko , Masaaki Sakuta
发明人： Mitsuhiko Ogihara , Ichimatsu Abiko , Masaaki Sakuta
IPC分类号： H01L33/00
CPC分类号： B41J2/45 , H01L25/0753 , H01L25/167 , H01L2224/48137 , H01L2924/01322 , H01L2924/3025 , H01L2924/00
摘要： A combined semiconductor apparatus has a substrate, a thin semiconductor film attached directly or indirectly to one major surface of the substrate, and a lens attached to the opposite surface of the substrate. The thin semiconductor film includes a light-emitting element that emits light through the substrate. After passing through the substrate, the emitted light is focused by the lens. The substrate functions as a spacing element, assuring that the lens is positioned at the correct distance from the light-emitting element without the need for separate alignment. The substrate also holds the lens without the need for a separate lens holder. Driving circuitry may also be formed on the substrate.
摘要翻译：组合半导体装置具有基板，直接或间接附着到基板的一个主表面的薄半导体膜，以及附接到基板的相对表面的透镜。薄型半导体膜包括通过基板发光的发光元件。通过基板后，发射的光被透镜聚焦。基板用作间隔元件，确保透镜位于与发光元件正确的距离处，而不需要单独对准。基板也保持透镜而不需要单独的透镜支架。也可以在衬底上形成驱动电路。

33. 发明授权

US07811841B2 Semiconductor composite device, method for manufacturing the semiconductor composite device, LED head that employs the semiconductor composite device, and image forming apparatus that employs the LED head 有权
标题翻译：半导体复合器件，半导体复合器件的制造方法，使用该半导体复合器件的LED头，以及采用该LED头的图像形成装置
公开(公告)号：US07811841B2
公开(公告)日：2010-10-12
申请号：US12230518
申请日：2008-08-29
申请人： Mitsuhiko Ogihara
发明人： Mitsuhiko Ogihara
IPC分类号： H01L21/00
CPC分类号： B41J2/45 , H01L25/0753 , H01L25/167 , H01L33/0079 , H01L33/40 , H01L33/62 , H01L2224/45144 , H01L2224/48137 , H01L2224/48227 , H01L2224/49175 , H01L2224/83801 , H01L2924/01004 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/12041 , H01L2924/14 , H01L2924/19043 , H01L2924/00
摘要： A semiconductor composite apparatus includes a semiconductor thin film and a metal layer formed on a substrate. The semiconductor thin film is bonded to the metal layer formed on the substrate. A region is formed between the semiconductor thin film and the metal surface, and contains an oxide of a metal that forms the metal surface. The metal surface is a surface of a metal layer provided on the substrate. The metal surface contains an element selected from the group consisting of Pd, Ni, Ge, Pt, Ti, Cr, and Au. The metal surface is coated with either a Pd layer or an Ni layer.
摘要翻译：半导体复合装置包括半导体薄膜和形成在基板上的金属层。半导体薄膜与形成在基板上的金属层接合。在半导体薄膜和金属表面之间形成区域，并且包含形成金属表面的金属的氧化物。金属表面是设置在基板上的金属层的表面。金属表面含有选自Pd，Ni，Ge，Pt，Ti，Cr和Au的元素。金属表面涂覆有Pd层或Ni层。

34. 发明申请

US20100051969A1 Display device 审中-公开
标题翻译：显示设备
公开(公告)号：US20100051969A1
公开(公告)日：2010-03-04
申请号：US12461851
申请日：2009-08-26
申请人： Mitsuhiko Ogihara , Kazuo Tokura
发明人： Mitsuhiko Ogihara , Kazuo Tokura
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , H01L25/0753 , H01L25/0756 , H01L2924/0002 , H01L2924/00
摘要： A display device includes a transparent substrate, and a plurality of single-crystal thin-film semiconductor light-emitting elements disposed on one side of the transparent substrate. Each of the single-crystal thin-film semiconductor light-emitting elements is composed of single-crystal thin-film semiconductor layers separated from a base substrate, and includes a light-emitting layer and two non-light-emitting layers disposed on both sides of the light-emitting layer.
摘要翻译：显示装置包括透明基板和设置在透明基板一侧的多个单晶薄膜半导体发光元件。每个单晶薄膜半导体发光元件由与基底基板分离的单晶薄膜半导体层构成，并且包括发光层和设置在两侧的两个非发光层的发光层。

35. 发明申请

US20080251798A1 Semiconductor device, LED head and image forming apparatus 审中-公开
标题翻译：半导体器件，LED头和成像设备
公开(公告)号：US20080251798A1
公开(公告)日：2008-10-16
申请号：US12081230
申请日：2008-04-11
申请人： Mitsuhiko Ogihara , Tomohiko Sagimori , Takahito Suzuki , Hiroyuki Fujiwara , Tomoki Igari , Masaaki Sakuta
发明人： Mitsuhiko Ogihara , Tomohiko Sagimori , Takahito Suzuki , Hiroyuki Fujiwara , Tomoki Igari , Masaaki Sakuta
IPC分类号： H01L33/00
CPC分类号： H01L33/641 , H01L33/642 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device is supplied which is able to efficiently liberate heat produced by semiconductor element toward external, prevent temperature rise, improve operation characteristic and maintain stable operation. The semiconductor device comprises a substrate and a semiconductor thin film layer which is accumulated on the substrate and contains semiconductor element, the substrate is a metal substrate, between the metal substrate and the semiconductor thin film layer, a diamond-like carbon layer with high heat conductivity and good insulativity is furnished as a surface coating layer.
摘要翻译：提供半导体器件，其能够有效地将由半导体元件产生的热量释放到外部，防止温度升高，提高操作特性并保持稳定的操作。该半导体器件包括：基板和半导体薄膜层，其积聚在基板上并且包含半导体元件，基板是金属基板，金属基板与半导体薄膜层之间，具有高热量的菱形碳层提供导电性和良好的绝缘性作为表面涂层。

36. 发明授权

US07432523B2 Semiconductor composite device, LED head that employs the semiconductor composite device, and image forming apparatus that employs the LED head 有权
标题翻译：半导体复合器件，采用该半导体复合器件的LED头，以及采用该LED头的图像形成装置
公开(公告)号：US07432523B2
公开(公告)日：2008-10-07
申请号：US11221754
申请日：2005-09-09
申请人： Mitsuhiko Ogihara
发明人： Mitsuhiko Ogihara
IPC分类号： H01L29/06 , H01L33/00
CPC分类号： B41J2/45 , H01L25/0753 , H01L25/167 , H01L33/0079 , H01L33/40 , H01L33/62 , H01L2224/45144 , H01L2224/48137 , H01L2224/48227 , H01L2224/49175 , H01L2224/83801 , H01L2924/01004 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/12041 , H01L2924/14 , H01L2924/19043 , H01L2924/00
摘要： A semiconductor composite apparatus includes a semiconductor thin film and a metal layer formed on a substrate. The semiconductor thin film is bonded to the metal layer formed on the substrate. A region is formed between the semiconductor thin film and the metal surface, and contains an oxide of a metal that forms the metal surface. The metal surface is a surface of a metal layer provided on the substrate. The metal surface contains an element selected from the group consisting of Pd, Ni, Ge, Pt, Ti, Cr, and Au. The metal surface is coated with either a Pd layer or an Ni layer.
摘要翻译：半导体复合装置包括半导体薄膜和形成在基板上的金属层。半导体薄膜与形成在基板上的金属层接合。在半导体薄膜和金属表面之间形成区域，并且包含形成金属表面的金属的氧化物。金属表面是设置在基板上的金属层的表面。金属表面含有选自Pd，Ni，Ge，Pt，Ti，Cr和Au的元素。金属表面涂覆有Pd层或Ni层。

37. 发明申请

US20080224170A1 Semiconductor wafer, light emitting diode print head, image forming apparatus, and method of producing semiconductor device 审中-公开
标题翻译：半导体晶片，发光二极管打印头，图像形成装置以及半导体装置的制造方法
公开(公告)号：US20080224170A1
公开(公告)日：2008-09-18
申请号：US12076052
申请日：2008-03-13
申请人： Mitsuhiko Ogihara , Tomoki Igari , Hiroyuki Fujiwara , Tomohiko Sagimori , Takahito Suzuki , Hironori Furuta , Yusuke Nakai
发明人： Mitsuhiko Ogihara , Tomoki Igari , Hiroyuki Fujiwara , Tomohiko Sagimori , Takahito Suzuki , Hironori Furuta , Yusuke Nakai
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/007 , B41J2/45 , H01L21/02395 , H01L21/0242 , H01L21/0245 , H01L21/02458 , H01L21/02463 , H01L21/02488 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L33/0079
摘要： A nitride semiconductor wafer includes a substrate; a nitride compound semiconductor layer formed on the substrate; and an AlxGa1-xAs layer (x≧0.6) formed between the substrate and the nitride semiconductor layer. The nitride compound semiconductor layer is formed of a nitride compound in a group III to a group V.
摘要翻译：氮化物半导体晶片包括基板; 形成在所述基板上的氮化物化合物半导体层; 和形成在衬底和氮化物半导体层之间的Al x Ga 1-x As As层（x> = 0.6）。氮化物半导体层由III族至第V族的氮化物化合物形成。

38. 发明授权

US07361935B2 Semiconductor device, LED print head, that uses the semiconductor, and image forming apparatus that uses the LED print head 有权
标题翻译：使用该半导体的半导体装置，LED打印头以及使用该LED打印头的图像形成装置
公开(公告)号：US07361935B2
公开(公告)日：2008-04-22
申请号：US11363292
申请日：2006-02-23
申请人： Mitsuhiko Ogihara , Hiroyuki Fujiwara , Masataka Muto , Takahito Suzuki , Tomoki Igari
发明人： Mitsuhiko Ogihara , Hiroyuki Fujiwara , Masataka Muto , Takahito Suzuki , Tomoki Igari
IPC分类号： H01L27/15
CPC分类号： H01L27/153 , B41J2/451
摘要： A semiconductor device includes a substrate, conductive layer, semiconductor thin films, and individual electrodes. The conductive layer is formed on the substrate and serves as a common electrode. The thin films are bonded on the conductive layer. Each of the plurality of semiconductor thin films includes at least one active region and a contact layer that is in electrical contact with the conductive layer. Each of the individual electrodes is formed on a surface of a corresponding one of the semiconductor thin films in electrical contact with the active region. The thin film may be a single thin film that includes a plurality of active regions formed therein, in which case a different common electrode may be used instead of the common electrode which is in contact with the surface and is electrically isolated from the individual electrodes.
摘要翻译：半导体器件包括衬底，导电层，半导体薄膜和单个电极。导电层形成在基板上并用作公共电极。薄膜结合在导电层上。多个半导体薄膜中的每一个包括至少一个有源区和与导电层电接触的接触层。每个单独电极形成在与有源区电接触的相应一个半导体薄膜的表面上。薄膜可以是包括形成在其中的多个有源区域的单个薄膜，在这种情况下，可以使用不同的公共电极来代替与表面接触并与各个电极电隔离的公共电极。

39. 发明申请

US20080055555A1 Projection display apparatus and image forming apparatus 有权
标题翻译：投影显示装置和图像形成装置
公开(公告)号：US20080055555A1
公开(公告)日：2008-03-06
申请号：US11892732
申请日：2007-08-27
申请人： Yukio Nakamura , Mitsuhiko Ogihara , Katsuyuki Ito , Takashi Ushikubo
发明人： Yukio Nakamura , Mitsuhiko Ogihara , Katsuyuki Ito , Takashi Ushikubo
IPC分类号： G03B21/16 , G03B21/20
CPC分类号： H04N9/31 , H04N5/7408
摘要： A projection display apparatus includes an image forming section that forms an image based on image information received from an external device, and a projection lens that projects the image formed by the image forming section. The projection display apparatus includes a substrate, a plurality of light emitting elements, a first driver and a second driver. The light emitting elements are two-dimensionally arranged on the substrate. The light emitting elements include rows of light emitting elements and columns of light emitting elements such that the rows are substantially perpendicular to the columns. The first driver element selectively drives the rows. The second driver element selectively drives the columns. The plurality of light emitting elements include three groups of light emitting elements aligned either in the rows or in the columns, each group emitting light of a different wavelength from the remaining groups.
摘要翻译：投影显示装置包括：图像形成部，其基于从外部装置接收的图像信息形成图像;投影透镜，投射由图像形成部形成的图像。投影显示装置包括基板，多个发光元件，第一驱动器和第二驱动器。发光元件二维排列在基板上。发光元件包括发光元件列和发光元件列，使得行大致垂直于列。第一个驱动元件有选择地驱动行。第二个驱动元件有选择地驱动列。多个发光元件包括在行或列中排列的三组发光元件，每组发射与其余组不同波长的光。

40. 发明申请

US20070114556A1 Semiconductor apparatus with thin semiconductor film 审中-公开
标题翻译：具有薄半导体膜的半导体器件
公开(公告)号：US20070114556A1
公开(公告)日：2007-05-24
申请号：US11651586
申请日：2007-01-10
申请人： Mitsuhiko Ogihara , Hiroyuki Fujiwara , Masaaki Sakuta , Ichimatsu Abiko
发明人： Mitsuhiko Ogihara , Hiroyuki Fujiwara , Masaaki Sakuta , Ichimatsu Abiko
IPC分类号： H01L33/00
CPC分类号： G03G15/043 , B41J2/45 , H01L27/153 , H01L33/62 , H01L2224/48137
摘要： A semiconductor apparatus includes a substrate having at least one terminal, a thin semiconductor film including at least one semiconductor device, the thin semiconductor film being disposed and bonded on the substrate; and an individual interconnecting line formed as a thin conductive film extending from the semiconductor device in the thin semiconductor film to the terminal in the substrate, electrically connecting the semiconductor device to the terminal. Compared with conventional semiconductor apparatus, the invented apparatus is smaller and has a reduced material cost.
摘要翻译：半导体装置包括具有至少一个端子的基板，包括至少一个半导体器件的薄半导体膜，所述薄半导体膜设置并接合在所述基板上; 以及形成为从薄半导体膜中的半导体器件延伸到衬底中的端子的薄导电膜的单独互连线，将半导体器件电连接到端子。与传统的半导体装置相比，本发明的装置更小，材料成本降低。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式