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31. 发明授权

US06342430B1 Trench isolation for micromechanical devices 有权
标题翻译：微机械装置的沟槽隔离
公开(公告)号：US06342430B1
公开(公告)日：2002-01-29
申请号：US09548680
申请日：2000-04-13
申请人： Scott G. Adams , Kevin A. Shaw , Russell Y. Webb , Bryan W. Reed , Noel C. MacDonald , Timothy J. Davis
发明人： Scott G. Adams , Kevin A. Shaw , Russell Y. Webb , Bryan W. Reed , Noel C. MacDonald , Timothy J. Davis
IPC分类号： H01L2176
CPC分类号： H01L21/76224 , B81B2203/0118 , B81B2203/033 , B81C1/00142 , B81C1/00698
摘要： An isolation process which enhances the performance of silicon micromechanical devices incorporates dielectric isolation segments within the silicon microstructure, which is otherwise composed of an interconnected grid of cantilevered beams. A metal layer on top of the beams provides interconnects and also allows contact to the silicon beams, electrically activating the device for motion or transduction. Multiple conduction paths are incorporated through a metal patterning step prior to structure definition. The invention improves manufacturability of previous processes by performing all lithographic patterning steps on flat topographies, and removing complicated metal sputtering steps required of most high aspect ratio processes. With little modification, the invention can be implemented with in grated circuit fabrication sequences for fully integrated devices.
摘要翻译：提高硅微机械器件性能的隔离工艺在硅微结构内部包含介电隔离段，否则由微悬臂梁的互连网格组成。在梁的顶部上的金属层提供互连并且还允许与硅束的接触，电激活装置以进行运动或转导。在结构定义之前，通过金属图案化步骤并入多个导电路径。本发明通过在平面形貌上进行所有平版印刷图案化步骤，以及去除大多数高纵横比工艺所需的复杂金属溅射步骤，从而提高先前工艺的可制造性。通过很少的修改，本发明可以用于完全集成的器件的格栅电路制造顺序。

32. 发明授权

US06180536B2 Suspended moving channels and channel actuators for microfluidic applications and method for making 失效
标题翻译：用于微流控应用的悬挂移动通道和通道执行器和制造方法
公开(公告)号：US06180536B2
公开(公告)日：2001-01-30
申请号：US09090840
申请日：1998-06-04
申请人： John M. Chong , Noel C. MacDonald
发明人： John M. Chong , Noel C. MacDonald
IPC分类号： H01L21306
CPC分类号： B81C1/00587 , B81B2201/051 , Y10S366/03
摘要： A microfabrication process for making enclosed, subsurface microfluidic tunnels, cavities, channels, and the like within suspended beams includes etching a single crystal silicon wafer to produce trenches defining a beam. The trench walls are oxidized, and the interior of the beam is etched through a channel via on the top of the beam to form a hollow beam with oxide sidewalls. The beam is released, and the via is then sealed to form an enclosed released channel beam,
摘要翻译：用于在悬挂梁内制造封闭的，地下微流体通道，空腔，通道等的微加工方法包括蚀刻单晶硅晶片以产生限定光束的沟槽。沟槽壁被氧化，并且梁的内部通过在梁的顶部上的通道蚀刻而形成具有氧化物侧壁的中空梁。将光束释放，然后将通孔密封以形成封闭释放的通道光束，

33. 发明授权

US6073484A Microfabricated torsional cantilevers for sensitive force detection 失效
标题翻译：用于敏感力检测的微型扭转悬臂
公开(公告)号：US6073484A
公开(公告)日：2000-06-13
申请号：US683929
申请日：1996-07-19
申请人： Scott A. Miller , Noel C. MacDonald , Yang Xu
发明人： Scott A. Miller , Noel C. MacDonald , Yang Xu
IPC分类号： G01L1/14 , G01B5/28 , G01B7/34 , G01B21/30 , G01N37/00 , G01P15/125 , G01P15/13 , G01Q70/02 , G01Q70/16
CPC分类号： G01Q70/16 , B82Y35/00 , G01B5/28 , G01P15/0894 , G01P15/125 , G01P15/131 , G01P2015/0831 , Y10S977/873
摘要： A torsional cantilever is microfabricated for reduced size to increase its resonance frequency, increase its scanning speed, and permit fabrication of large numbers in an array to provide parallel scanning. The cantilever may incorporate a tip for highly sensitive force detection. The device preferably includes a cantilever arm and a counterbalance mounted on opposite sides of a laterally extending torsional beam fixed at its outer ends. Sensors detect rotation of the cantilever arm and may provide control of sensor locator through a feedback loop.
摘要翻译：扭转悬臂是微加工的，以减小尺寸以增加其共振频率，增加其扫描速度，并且允许在阵列中制造大数量以提供并行扫描。悬臂可以包含用于高度敏感的力检测的尖端。该装置优选地包括安装在固定在其外端的横向延伸的扭转梁的相对侧上的悬臂和平衡。传感器检测悬臂的旋转，并可通过反馈环来提供对传感器定位器的控制。

34. 发明授权

US5847454A Electrically isolated released microstructures 失效
标题翻译：电隔离释放微结构
公开(公告)号：US5847454A
公开(公告)日：1998-12-08
申请号：US310336
申请日：1994-09-22
申请人： Kevin A. Shaw , Z. Lisa Zhang , Noel C. MacDonald
发明人： Kevin A. Shaw , Z. Lisa Zhang , Noel C. MacDonald
IPC分类号： C23F4/00 , B81B3/00 , G01P15/08 , G01P15/125 , H01L21/302 , H01L21/3065 , H01L29/82 , H01L29/84 , H01L23/48 , B44C1/22 , H01L23/52
CPC分类号： B81C1/00619 , B81C1/00142 , B81C1/0015 , B81C1/00626 , G01P15/0802 , G01P15/125 , B81C2201/0112 , B81C2201/0132 , B81C2201/053 , G01P2015/0814 , G01P2015/0817 , G01P2015/0828 , Y10S148/05 , Y10S73/01
摘要： A single mask, low temperature reactive ion etching process for fabricating high aspect ratio, released single crystal microelectromechanical structures independently of crystal orientation.
摘要翻译：用于制造高纵横比的单一掩模，低温反应离子蚀刻工艺，独立于晶体取向释放单晶微机电结构。

35. 发明授权

US5844251A High aspect ratio probes with self-aligned control electrodes 失效
标题翻译：具有自对准控制电极的高纵横比探针
公开(公告)号：US5844251A
公开(公告)日：1998-12-01
申请号：US573308
申请日：1995-12-15
申请人： Noel C. MacDonald , Z. Lisa Zhang
发明人： Noel C. MacDonald , Z. Lisa Zhang
IPC分类号： B81B1/00 , H01L21/00 , H01L29/06
CPC分类号： G01Q60/04 , B82Y35/00 , G01Q60/16 , G01Q60/38 , G01Q70/10 , Y10S977/878
摘要： A high aspect ratio field emission or tunnelling probe is fabricated utilizing a single crystal reactive etching and metallization process. The resulting field emission probes have self-aligned single crystal silicon sharp tips, high aspect ratio supporting posts for the tips, and integrated, self-aligned gate electrodes surrounding an electrically isolated from the tips. The gate electrodes are spaced from the tips by between 200 and 800 nm and metal silicide or metal can be applied on the tips to achieve emitter turn on at low operational gate voltages. The resulting tips have a high aspect ratio for use in probing various surface phenomena, and for this purpose, the probes can be mounted on or integrated in a three-dimensional translator for mechanical scanning across the surface and for focusing by adjusting the height of the emitter above the surface.
摘要翻译：使用单晶反应蚀刻和金属化工艺制造高纵横比场致发射或隧道探针。所产生的场致发射探针具有自对准单晶硅尖尖，用于尖端的高纵横比支撑柱，以及围绕与尖端电隔离的集成的自对准栅电极。栅电极与尖端间隔200至800nm，并且金属硅化物或金属可以施加在尖端上，以在低操作栅极电压下实现发射极导通。所得到的尖端具有高的纵横比用于探测各种表面现象，并且为此目的，探针可以安装在三维平移机上或集成在三维平移机中，用于穿过表面进行机械扫描，并通过调整高度来进行聚焦发射体在表面以上。

36. 发明授权

US5610335A Microelectromechanical lateral accelerometer 失效
标题翻译：微机电横向加速度计
公开(公告)号：US5610335A
公开(公告)日：1997-03-11
申请号：US246265
申请日：1994-05-19
申请人： Kevin A. Shaw , Scott G. Adams , Noel C. MacDonald
发明人： Kevin A. Shaw , Scott G. Adams , Noel C. MacDonald
IPC分类号： B60G23/00 , B81B3/00 , B81C1/00 , G01P1/00 , G01P15/08 , G01P15/125 , G01P15/13 , H01L29/84
CPC分类号： G01P15/131 , B81B3/0051 , G01P1/006 , G01P15/0802 , G01P15/125 , G01R33/0286 , B81B2201/0235 , B81B2203/0109 , B81B2203/0136 , G01P2015/0814 , G01P2015/0831
摘要： A microelectromechanical accelerometer having submicron features is fabricated from a single crystal silicon substrate. The accelerometer includes a movable portion incorporating an axial beam carrying laterally-extending high aspect ratio released fingers cantilevered above the floor of a cavity formed in the substrate during the fabrication process. The movable portion is supported by restoring springs having controllable flexibility to vary the resonant frequency of the structure. A multiple-beam structure provides stiffness in the movable portion for accuracy.
摘要翻译：具有亚微米特征的微机电加速计由单晶硅衬底制造。加速度计包括可动部分，该可动部分在制造过程中结合有横向延伸的高纵横比释放指状物的轴向梁，悬挂臂形成在衬底中形成的空腔的地板上。可移动部分由具有可控柔性的恢复弹簧支撑以改变结构的谐振频率。多光束结构提供可移动部分的刚度以获得准确性。

37. 发明授权

US5563343A Microelectromechanical lateral accelerometer 失效
标题翻译：微机电横向加速度计
公开(公告)号：US5563343A
公开(公告)日：1996-10-08
申请号：US67264
申请日：1993-05-26
申请人： Kevin A. Shaw , Scott G. Adams , Noel C. MacDonald
发明人： Kevin A. Shaw , Scott G. Adams , Noel C. MacDonald
IPC分类号： B81B3/00 , B81C1/00 , G01P1/00 , G01P15/08 , G01P15/125 , G01P15/13
CPC分类号： G01P15/131 , B81B3/0051 , G01P1/006 , G01P15/0802 , G01P15/125 , G01R33/0286 , B81B2201/0235 , B81B2203/0109 , B81B2203/0136 , G01P2015/0814 , G01P2015/0831
摘要： A microelectromechanical accelerometer having submicron features is fabricated from a single crystal silicon substrate. The accelerometer includes a movable portion incorporating an axial beam carrying laterally-extending high aspect ratio released fingers cantilevered above the floor of a cavity formed in the substrate during the fabrication process. The movable portion is supported by restoring springs having controllable flexibility to vary the resonant frequency of the structure. A multiple-beam structure provides stiffness in the movable portion for accuracy.
摘要翻译：具有亚微米特征的微机电加速计由单晶硅衬底制造。加速度计包括可动部分，该可动部分在制造过程中结合有横向延伸的高纵横比释放指状物的轴向梁，悬挂臂形成在衬底中形成的空腔的地板上。可移动部分由具有可控柔性的恢复弹簧支撑以改变结构的谐振频率。多光束结构提供可移动部分的刚度以获得准确性。

38. 发明授权

US5506175A Method of forming compound stage MEM actuator suspended for multidimensional motion 失效
标题翻译：形成用于多维运动的复合级MEM致动器的形成方法
公开(公告)号：US5506175A
公开(公告)日：1996-04-09
申请号：US443331
申请日：1995-05-17
申请人： Z. Lisa Zhang , Noel C. MacDonald
发明人： Z. Lisa Zhang , Noel C. MacDonald
IPC分类号： B81B1/00 , B81B3/00 , H02N1/00 , H01L21/465
CPC分类号： H02N1/008 , B81B3/0021 , B81B3/0062 , B81C1/0019 , B82Y15/00 , B81B2201/11 , B81B2203/053 , B81B2203/055 , B81B2207/07
摘要： A microelectromechanical compound stage microactuator assembly capable of motion along x, y, and z axes for positioning and scanning integrated electromechanical sensors and actuators is fabricated from submicron suspended single crystal silicon beams. The microactuator incorporates an interconnect system for mechanically supporting a central stage and for providing electrical connections to componants of the microactuator and to devices carried thereby. The microactuator is fabricated using a modified single crystal reactive etching and metallization process which incorporates an isolation process utilizing thermal oxidation of selected regions of the device to provide insulating segments which define conductive paths from external circuitry to the actuator components and to microelectronic devices such as gated field emitters carried by the actuator.
摘要翻译：由亚微米悬浮单晶硅光束制造能够沿x，y和z轴运动的微机电复合级微致动器组件，用于定位和扫描集成的机电传感器和致动器。该微型致动器包括用于机械地支撑中央级并用于提供与微型致动器的部件的电连接以及由此承载的装置的互连系统。使用改进的单晶反应蚀刻和金属化工艺制造微致动器，其包括利用设备的选定区域的热氧化的隔离工艺，以提供绝缘段，其限定从外部电路到致动器部件的导电路径以及限定门控的微电子器件由致动器承载的场致发射体。

39. 发明授权

US5316979A RIE process for fabricating submicron, silicon electromechanical structures 失效
标题翻译：用于制造亚微米，硅机电结构的RIE工艺
公开(公告)号：US5316979A
公开(公告)日：1994-05-31
申请号：US38879
申请日：1993-03-29
申请人： Noel C. MacDonald , Zuoying L. Zhang
发明人： Noel C. MacDonald , Zuoying L. Zhang
IPC分类号： B81B3/00 , B81C1/00 , H01H1/00 , H01L21/3065 , H01L21/308 , H01L21/44 , H01L21/48 , H01L21/90
CPC分类号： B81C1/0015 , B81C1/00619 , H01H1/0036 , H01L21/3065 , H01L21/3081 , B81C2201/0132 , B81C2201/053 , Y10S148/05 , Y10S148/051
摘要： A reactive ion etching process is used for the fabrication of submicron, single crystal silicon, movable mechanical structures and capacitive actuators. The reactive ion etching process gives excellent control of lateral dimensions while maintaining a large vertical depth in the formation of high aspect-ratio freely suspended single crystal silicon structures. The silicon etch process is independent of crystal orientation and produces controllable vertical profiles.
摘要翻译：反应离子蚀刻工艺用于制造亚微米，单晶硅，可移动机械结构和电容式致动器。在形成高纵横比自由悬浮的单晶硅结构时，反应离子蚀刻工艺提供了横向尺寸的优异控制，同时保持了较大的垂直深度。硅蚀刻工艺独立于晶体取向并产生可控垂直分布。

40. 发明授权

US5235187A Methods of fabricating integrated, aligned tunneling tip pairs 失效
标题翻译：整合，对齐的隧道提花对的方法
公开(公告)号：US5235187A
公开(公告)日：1993-08-10
申请号：US868138
申请日：1992-04-14
申请人： Susanne C. Arney , Noel C. MacDonald , Jun J. Yao
发明人： Susanne C. Arney , Noel C. MacDonald , Jun J. Yao
IPC分类号： G01B7/34 , B81B1/00 , B81B3/00 , G01B7/00 , G01N37/00 , G01Q20/04 , G01Q60/16 , G01Q70/12 , G01Q70/14 , H01J37/28 , H02N1/00
CPC分类号： H02N1/008 , B82Y35/00 , G01Q20/04 , G01Q60/16 , Y10S977/874
摘要： Self-aligned, opposed, nanometer dimension tips are fabricated in pairs, one of each pair being located on a movable, single crystal beam, with the beam being movable in three dimensions with respect to a substrate carrying the other tip of a pair. Motion of one tip with respect to the other is controlled or sensed by transducers formed on the supporting beams. Spring means in each beam allow axial motion of the beam. The tips and beams are fabricated from single crystal silicon substrate, and the tips may be electrically isolated from the substrate by fabricating insulating segments in the beam structure.
摘要翻译：自对准的，相对的，纳米尺寸的尖端成对制造，每对中的一个位于可移动的单晶束上，其中光束可相对于承载一对的另一个尖端的基板在三维空间中移动。一个尖端相对于另一个尖端的运动由形成在支撑梁上的换能器控制或感测。每个梁中的弹簧装置允许梁的轴向运动。尖端和光束由单晶硅衬底制成，并且尖端可以通过在梁结构中制造绝缘段而与衬底电隔离。

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