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    • 31. 发明授权
    • Method of driving an electrophoretic display
    • 驱动电泳显示的方法
    • US08279244B2
    • 2012-10-02
    • US13302442
    • 2011-11-22
    • Mitsutoshi MiyasakaAtsushi MiyazakiHideyuki Kawai
    • Mitsutoshi MiyasakaAtsushi MiyazakiHideyuki Kawai
    • G09G5/10
    • G09G3/344G09G2300/08G09G2310/061G09G2320/0257
    • An electrophoretic display device includes M×N numbers (M, and N are integers more than two) of pixels. The M×N numbers of pixels include M numbers of pixel groups having N numbers of pixels. Further, an image on the electrophoretic display device is displayed by making some of the M×N numbers of pixels switched at least from a bright display to a dark display, and vice versa. A period for displaying one piece of an image on the electrophoretic display is defined as period for forming an image and a period for introducing an image signal to each of the M×N numbers of pixels with sequentially selecting each of the pixels is defined as a frame period. Then, the time for forming an image includes a plurality of frame periods (a numbers of L: L is integers more than two.)
    • 电泳显示装置包括像素的M×N个数字(M,N为大于2的整数)。 M×N个像素包括具有N个像素的M个像素组。 此外,通过使M×N个像素中的一些至少从亮显示切换到暗显示来显示电泳显示装置上的图像,反之亦然。 将用于在电泳显示器上显示一幅图像的周期定义为用于形成图像的周期,并且将依次选择每个像素的图像信号引入到每个M×N个像素的周期被定义为 帧周期。 然后,用于形成图像的时间包括多个帧周期(L的数量是大于2的整数)
    • 32. 发明授权
    • Method of driving an electrophoretic display
    • 驱动电泳显示的方法
    • US07773069B2
    • 2010-08-10
    • US11330304
    • 2006-01-11
    • Mitsutoshi MiyasakaAtsushi MiyazakiHideyuki Kawai
    • Mitsutoshi MiyasakaAtsushi MiyazakiHideyuki Kawai
    • G09G3/34
    • G09G3/344G09G2300/08G09G2310/061G09G2320/0257
    • An electrophoretic display device includes M×N numbers (M, and N are integers more than two) of pixels. The M×N numbers of pixels include M numbers of pixel groups having N numbers of pixels. Further, an image on the electrophoretic display device is displayed by making some of the M×N numbers of pixels switched at least from a bright display to a dark display, and vice versa. A period for displaying one piece of an image on the electrophoretic display is defined as period for forming an image and a period for introducing an image signal to each of the M×N numbers of pixels with sequentially selecting each of the pixels is defined as a frame period. Then, the time for forming an image includes a plurality of frame periods (a numbers of L: L is integers more than two).
    • 电泳显示装置包括像素的M×N个数字(M,N为大于2的整数)。 M×N个像素包括具有N个像素的M个像素组。 此外,通过使M×N个像素中的一些至少从亮显示切换到暗显示来显示电泳显示装置上的图像,反之亦然。 将用于在电泳显示器上显示一幅图像的周期定义为用于形成图像的周期,并且将依次选择每个像素的图像信号引入到每个M×N个像素的周期被定义为 帧周期。 然后,形成图像的时间包括多个帧周期(L:L的数目大于2的整数)。
    • 33. 发明授权
    • Electrophoretic display device and driving method thereof
    • 电泳显示装置及其驱动方法
    • US07755599B2
    • 2010-07-13
    • US11330305
    • 2006-01-11
    • Mitsutoshi Miyasaka
    • Mitsutoshi Miyasaka
    • G09G3/34
    • G09G3/344G09G2300/0876G09G2320/066
    • An electrophoretic display device including a first substrate, a second substrate, an electrophoretic material interposed between the first substrate and the second substrate, the electrophoretic material including a positively charged particle and a negatively charged particle, a common electrode provided on the second substrate, a pixel provided at an intersection of a signal line and a scan line, the pixel provided in a plural number and arranged in matrix on the first substrate. The electrophoretic display device further including a pixel electrode provided in the pixel, a capacitor line provided in the pixel, a storage capacitor provided in the pixel, and a second electrode of the storage capacitor being coupled to a storage capacitor line and a thin film transistor (TFT) provided in the pixel, a source electrode of the TFT being coupled to a first electrode of the storage capacitor and the pixel electrode, a drain electrode of the TFT being coupled to the signal line, and a gate electrode of the TFT being coupled to the scan line. A capacitor line low select signal VSL or a capacitor line non-select signal VSC having a higher electric potential than an electric potential of the capacitor line low select signal VSL is supplied to the storage capacitor line.
    • 一种电泳显示装置,包括第一基板,第二基板,插入在第一基板和第二基板之间的电泳材料,所述电泳材料包括带正电的粒子和带负电的粒子,设置在第二基板上的公共电极, 设置在信号线和扫描线的交点处的像素,所述像素被设置为多个并以矩阵形式布置在第一基板上。 电泳显示装置还包括设置在像素中的像素电极,设置在像素中的电容器线,设置在像素中的存储电容器和存储电容器的第二电极耦合到辅助电容线和薄膜晶体管 (TFT),所述TFT的源电极耦合到所述存储电容器的第一电极和所述像素电极,所述TFT的漏电极耦合到所述信号线,并且所述TFT的栅电极为 耦合到扫描线。 将具有比电容器线路低选择信号VSL的电位高的电位的电容器线路低选择信号VSL或电容器线路非选择信号VSC提供给辅助电容线。
    • 34. 发明授权
    • Electrostatic capacitance detection device and smart card
    • 静电电容检测装置和智能卡
    • US07327596B2
    • 2008-02-05
    • US11207841
    • 2005-08-22
    • Hiroaki EbiharaMitsutoshi Miyasaka
    • Hiroaki EbiharaMitsutoshi Miyasaka
    • G11C11/24
    • G07C9/00087G06K9/0002G06K19/0718G07C2009/00095
    • An electrostatic capacitance detection device, for detecting electrostatic capacitance that changes in accordance with a distance from a target object to read surface contours of the target object, can sense electrostatic capacitance highly accurately even with using thin-film semiconductor devices. The electrostatic capacitance detection device includes electrostatic capacitance detection elements arranged in M rows and N columns, a power supply line that supplies power to the electrostatic capacitance detection elements, an output line that outputs a signal from the electrostatic capacitance detection elements, M row lines that select the electrostatic capacitance detection elements disposed on a specific row, and N column lines that select the electrostatic capacitance detection elements disposed on a specific column. Further, the electrostatic capacitance detection elements each include a signal detection element, a row selection element, a column selection element, and a signal amplification element.
    • 用于检测根据与目标物体的距离变化以读取目标物体的表面轮廓的静电电容的静电电容检测装置,即使使用薄膜半导体器件也能够高精度地感测静电电容。 静电电容检测装置包括以M行N列排列的静电电容检测元件,向静电电容检测元件供给电力的电源线,输出来自静电电容检测元件的信号的输出线,M行 选择设置在特定行上的静电电容检测元件,以及选择设置在特定列上的静电电容检测元件的N列线。 此外,静电电容检测元件各自包括信号检测元件,行选择元件,列选择元件和信号放大元件。
    • 36. 发明授权
    • Electrostatic capacitance sensing device and method of driving the same
    • 静电电容感测装置及其驱动方法
    • US07091726B2
    • 2006-08-15
    • US10932037
    • 2004-09-02
    • Junichi SanoMitsutoshi Miyasaka
    • Junichi SanoMitsutoshi Miyasaka
    • G01R27/26
    • G01D5/2405A61B5/1077A61B5/1172G06K9/0002
    • An electrostatic capacitance sensing device of exemplary embodiments of the present invention include M number of row lines, N number of column lines that are arranged in a matrix of M rows and N columns, N number of path gates for output signal, and electrostatic capacitance sensing elements provided at the intersections between the row and column lines. The electrostatic capacitance sensing element includes a signal sensing element, a signal amplifying element, a column selection element, and a row selection element. The signal sensing element includes a capacitance sensing electrode and a capacitance sensing dielectric film. The path gate for output signal, the signal amplifying element, the column selection element, and the row selection element are made up of thin-film semiconductor devices.
    • 本发明的示例性实施例的静电电容感测装置包括M行行,排列成M行和N列的N列列线,N个用于输出信号的路径门,以及静电电容感测 提供在行和列之间的交点处的元件。 静电电容感测元件包括信号感测元件,信号放大元件,列选择元件和行选择元件。 信号感测元件包括电容感测电极和电容感测电介质膜。 用于输出信号的路径栅极,信号放大元件,列选择元件和行选择元件由薄膜半导体器件组成。
    • 39. 发明申请
    • Complementary thin film transistor circuit, electro-optical device, and electronic apparatus
    • 互补薄膜晶体管电路,电光器件和电子设备
    • US20050255639A1
    • 2005-11-17
    • US11171453
    • 2005-07-01
    • Mitsutoshi Miyasaka
    • Mitsutoshi Miyasaka
    • H01L27/08H01L21/20H01L21/336H01L21/77H01L21/8238H01L21/84H01L27/092H01L27/12H01L29/04H01L29/423H01L29/786
    • H01L29/78675H01L27/12H01L27/1281H01L29/04H01L29/42384H01L29/78603H01L29/78621
    • A first-conductivity-type thin film transistor and a second-conductivity-type thin film transistor are formed using a plurality of single crystal grains, the plurality of single crystal grains being formed substantially centered on each of a plurality of starting-point portions disposed on an insulating surface of a substrate, the plurality of single crystal grains being composed of at least a first single crystal grain and a second single crystal grain adjacent to each other, with a crystal grain boundary therebetween, the first-conductivity-type thin film transistor includes at least a first-conductivity-type drain region formed adjacent to the crystal grain boundary in the first single crystal grain, the second-conductivity-type thin film transistor includes at least a second-conductivity-type drain region formed adjacent to the crystal grain boundary in the second single crystal grain, and a common electrode is provided on the crystal grain boundary to lead out outputs from the first-conductivity-type drain region and the second-conductivity-type drain region.
    • 使用多个单晶粒形成第一导电型薄膜晶体管和第二导电型薄膜晶体管,所述多个单晶粒基本上以多个起点部分为中心地设置, 在基板的绝缘表面上,所述多个单晶粒由至少第一单晶粒和第二单晶相互相邻,其间具有晶界,所述第一导电型薄膜 晶体管至少包括在第一单晶晶粒中与晶界相邻形成的第一导电型漏极区,第二导电型薄膜晶体管至少包括与第一单晶晶粒相邻形成的第二导电型漏极区 在第二单晶晶粒中的晶界,并且在晶界上设置公共电极以引出来自冷杉的输出 导电型漏极区域和第二导电型漏极区域。