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31. 发明申请

US20060061919A1 Method of adjusting CoFe free layer magnetostriction 有权
公开(公告)号：US20060061919A1
公开(公告)日：2006-03-23
申请号：US11268076
申请日：2005-11-07
申请人： Min Li , Kunliang Zhang , Masashi Sano , Koichi Terunuma , Simon Liao , Kochan Ju
发明人： Min Li , Kunliang Zhang , Masashi Sano , Koichi Terunuma , Simon Liao , Kochan Ju
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , H01F10/30 , H01F10/3268 , H01F41/305 , Y10T29/49044
摘要： It has been found that the insertion of a copper laminate within CoFe, or a CoFe/NiFe composite, leads to higher values of CPP GMR and DRA. However, this type of structure exhibits very negative magnetostriction, in the range of high −10−6 to −10−5. This problem has been overcome by giving the copper laminates an oxygen exposure treatment When this is done, the free layer is found to have a very low positive magnetostriction constant. Additionally, the value of the magnetostriction constant can be adjusted by varying the thickness of the free layer and/or the position and number of the oxygen treated copper laminates.

32. 发明授权

US06999286B2 Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads 失效
公开(公告)号：US06999286B2
公开(公告)日：2006-02-14
申请号：US11091099
申请日：2005-03-28
申请人： Bernard Dieny , Cheng T. Horng , Kochan Ju , Min Li , Simon Liao
发明人： Bernard Dieny , Cheng T. Horng , Kochan Ju , Min Li , Simon Liao
IPC分类号： G11B5/127
CPC分类号： H01F41/302 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3967 , G11B2005/3996 , H01F10/3259 , H01F10/3272
摘要： Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layers. Said enhanced properties are provided by the insertion of magnetic nano-oxide layers between ferromagnetic layers and non-magnetic spacer layers, whereby said nano-oxide layers increase resistance and exhibit spin filtering properties. CPP sensor stacks of various types are provided, all having nano-oxide layers formed therein, including the spin-valve type and the synthetic antiferromagnetic pinned layer spin-valve type. Said stacks can also be formed upon each other to provide laminated stacks of different types.

33. 发明授权

US06998150B2 Method of adjusting CoFe free layer magnetostriction 失效
标题翻译： CoFe自由层磁致伸缩的调整方法
公开(公告)号：US06998150B2
公开(公告)日：2006-02-14
申请号：US10388289
申请日：2003-03-12
申请人： Min Li , Kunliang Zhang , Masashi Sano , Koichi Terunuma , Simon Liao , Kochan Ju
发明人： Min Li , Kunliang Zhang , Masashi Sano , Koichi Terunuma , Simon Liao , Kochan Ju
IPC分类号： C23C8/10
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , H01F10/30 , H01F10/3268 , H01F41/305 , Y10T29/49044
摘要： It has been found that the insertion of a copper laminate within CoFe, or a CoFe/NiFe composite, leads to higher values of CPP GMR and DRA. However, this type of structure exhibits very negative magnetostriction, in the range of high −10−6 to −10−5. This problem has been overcome by giving the copper laminates an oxygen exposure treatment When this is done, the free layer is found to have a very low positive magnetostriction constant. Additionally, the value of the magnetostriction constant can be adjusted by varying the thickness of the free layer and/or the position and number of the oxygen treated copper laminates.
摘要翻译：已经发现，在CoFe或CoFe / NiFe复合材料中插入铜层压体导致CPP GMR和DRA的值更高。然而，这种类型的结构在高-10 -6至-10 -5范围内表现出非常负的磁致伸缩。通过给铜层压板进行氧曝光解决了这个问题。当这样做时，发现自由层具有非常低的正磁致伸缩常数。此外，磁致伸缩常数的值可以通过改变自由层的厚度和/或氧处理的铜层压板的位置和数量来调节。

34. 发明授权

US06985337B2 Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads 失效
公开(公告)号：US06985337B2
公开(公告)日：2006-01-10
申请号：US11091281
申请日：2005-03-28
申请人： Bernard Dieny , Cheng Horng , Kochan Ju , Min Li , Simon Liao
发明人： Bernard Dieny , Cheng Horng , Kochan Ju , Min Li , Simon Liao
IPC分类号： G11B5/127
CPC分类号： H01F41/302 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3967 , G11B2005/3996 , H01F10/3259 , H01F10/3272
摘要： Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layers. Said enhanced properties are provided by the insertion of magnetic nano-oxide layers between ferromagnetic layers and non-magnetic spacer layers, whereby said nano-oxide layers increase resistance and exhibit spin filtering properties. CPP sensor stacks of various types are provided, all having nano-oxide layers formed therein, including the spin-valve type and the synthetic antiferromagnetic pinned layer spin-valve type. Said stacks can also be formed upon each other to provide laminated stacks of different types.

35. 发明授权

US06972934B2 Synthetic anti-parallel spin valve with thin AFM layer for very high density application 失效
标题翻译：具有薄AFM层的合成反并联自旋阀，用于非常高密度的应用
公开(公告)号：US06972934B2
公开(公告)日：2005-12-06
申请号：US10883930
申请日：2004-07-02
申请人： Cheng T. Horng , Kochan Ju , Mao-Min Chen , Min Li , Ru-Ying Tong , Simon Liao
发明人： Cheng T. Horng , Kochan Ju , Mao-Min Chen , Min Li , Ru-Ying Tong , Simon Liao
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , H01F10/14 , H01F10/16 , H01F10/32 , H01F41/14 , H01L43/08 , H01L43/10 , H01L43/12
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , H01F10/3268 , H01F10/3295 , Y10T29/49032 , Y10T29/49034 , Y10T29/49039 , Y10T29/49044 , Y10T29/49055
摘要： A method for forming top and bottom spin valve sensors and the sensors so formed, the sensors having a strongly coupled SyAP pinned layer and an ultra-thin antiferromagnetic pinning layer. The two strongly coupled ferromagnetic layers comprising the SyAP pinned layer in the top valve configuration are separated by a Ru spacer layer approximately 3 angstroms thick, while the two layers in the bottom spin valve configuration are separated by a Rh spacer layer approximately 5 angstroms thick. This allows the use of an ultra thin MnPt antiferromagnetic pinning layer of thickness between approximately 80 and approximately 150 angstroms. The sensor structure produced thereby is suitable for high density applications.
摘要翻译：用于形成顶部和底部自旋阀传感器和如此形成的传感器的方法，所述传感器具有强耦合的SyAP钉扎层和超薄反铁磁钉扎层。包括顶阀配置中的SyAP钉扎层的两个强耦合铁磁层由大约3埃厚的Ru隔离层隔开，而底部自旋阀结构中的两个层被大约5埃厚的Rh间隔层隔开。这允许使用厚度在大约80和大约150埃之间的超薄MnPt反铁磁性钉扎层。由此生产的传感器结构适用于高密度应用。

36. 发明申请

US20050219773A1 Fabrication method for an in-stack stabilized synthetic stitched CPP GMR head 失效
标题翻译：堆叠稳定的合成缝合CPP GMR头的制造方法
公开(公告)号：US20050219773A1
公开(公告)日：2005-10-06
申请号：US10812695
申请日：2004-03-30
申请人： Min Li , Youfeng Zheng , Kunliang Zhang , Simon Liao , Kochan Ju
发明人： Min Li , Youfeng Zheng , Kunliang Zhang , Simon Liao , Kochan Ju
IPC分类号： G01R33/09 , G11B5/127 , G11B5/33 , G11B5/39 , H01F10/16 , H01F10/32 , H01F41/30 , H01L43/08 , H01L43/12
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , H01F10/3272 , H01F41/308 , Y10T29/49034 , Y10T428/1143
摘要： A method for fabricating a stitched CPP synthetic spin-valve sensor with in-stack stabilization of its free layer. The method can also be applied to the formation of a stitched tunneling magnetoresistive sensor. The free layer is strongly stabilized by magnetostatic coupling through the use of a longitudinal biasing formation that includes a ferromagnetic layer, denoted LBL, within the pillar portion of the sensor and a synthetic exchange coupled tri-layer within the stitched portion of the sensor. The tri-layer consists of two ferromagnetic layers, FM1 and FM2 separated by a coupling layer and magnetized longitudinally in antiparallel directions. A criterion for the magnetic thicknesses of the layers: [t(LBL)+t(FM1)]/t(FM2)=70/90 angstroms of CoFe insures a strong exchange coupling. The magnetization of the tri-layer is done in a low field anneal that does not disturb the previous magnetization of the ferromagnetic free layer.
摘要翻译：一种用于制造其自由层的堆叠稳定化的缝合CPP合成自旋阀传感器的方法。该方法还可以应用于缝合隧道磁阻传感器的形成。通过使用包括在传感器的柱部分中表示为LBL的铁磁性层的纵向偏压结构和在传感器的缝合部分内的合成交换耦合三层的静电耦合，自由层被强烈地稳定。三层由两个铁磁层组成，FM 1和FM 2由耦合层分开，并沿反向平行方向纵向磁化。层的磁性厚度的标准：CoFe的[t（LBL）+ t（FM 1）] / t（FM 2）= 70/90埃确保了强的交换耦合。三层的磁化是在不影响铁磁自由层的先前磁化的低场退火中进行的。

37. 发明申请

US20050111148A1 Method of increasing CPP GMR in a spin valve structure 有权
标题翻译：在自旋阀结构中增加CPP GMR的方法
公开(公告)号：US20050111148A1
公开(公告)日：2005-05-26
申请号：US10718373
申请日：2003-11-20
申请人： Min Li , Kochan Ju , Youfeng Zheng , Simon Liao , Jeiwei Chang
发明人： Min Li , Kochan Ju , Youfeng Zheng , Simon Liao , Jeiwei Chang
IPC分类号： G01R33/09 , G11B5/127 , G11B5/17 , G11B5/33 , G11B5/39 , H01F10/16 , H01F10/32 , H01L43/08 , H01L43/12
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B2005/3996
摘要： A current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the sensor comprising a GMR stack having a substantially square lateral cross-section, a Cu spacer layer of smaller square cross-section formed centrally on the GMR stack and a capped ferromagnetic free layer of substantially square, but even smaller cross-sectional area, formed centrally on the spacer layer. The stepped, reduced area geometry of the sensor provides a significant improvement in its GMR ratio (DR/R), a reduced resistance, R, and elimination of Joule heating hot-spots in regions of high resistance such as the antiferromagnetic pinning layer and its seed layer.
摘要翻译：提供合成自旋阀类型的电流垂直平面（CPP）巨磁阻（GMR）传感器，该传感器包括具有基本正方形横截面的GMR叠层，较小方形截面的Cu间隔层，在GMR堆叠上形成中心的截面，以及在间隔层中央形成基本上正方形，但是更小的横截面积的封盖铁磁自由层。传感器的阶梯式减小的面积几何形状提供了其GMR比（DR / R），电阻降低，R和消除高电阻区域中的焦耳加热热点的显着改进，例如反铁磁钉扎层及其种子层。

38. 发明申请

US20050052789A1 Supplementary shield for CPP GMR read head 有权
标题翻译： CPP GMR读取头补充屏蔽
公开(公告)号：US20050052789A1
公开(公告)日：2005-03-10
申请号：US10657504
申请日：2003-09-08
申请人： Kunliang Zhang , Kochan Ju , Min Li , Youfeng Zheng , Simon Liao , Yue Liu
发明人： Kunliang Zhang , Kochan Ju , Min Li , Youfeng Zheng , Simon Liao , Yue Liu
IPC分类号： G11B5/31 , G11B5/33 , G11B5/127
CPC分类号： G11B5/332 , G11B5/31 , G11B5/3912 , G11B5/398
摘要： Increases in the AP1 and AP2 thickness cause the free layer to be off-center in a CPP magnetic read head. This problem has been overcome by inserting supplementary magnetic shields within the spin valve, located as close as possible to the stack. These supplementary shields enable the read gap width to be reduced by about 430 Å and the free layer to shift back towards the center by about 30 Å.
摘要翻译： AP1和AP2厚度的增加导致CPP磁头中的自由层偏心。通过在辅助磁屏蔽件内插入尽可能靠近堆叠的位置来克服这个问题。这些辅助屏蔽使得读取间隙宽度可以减小约430埃，而自由层向中心向后移动大约30埃。

39. 发明申请

US20050094323A1 Integrated spin valve head 失效
标题翻译：集成自旋阀头
公开(公告)号：US20050094323A1
公开(公告)日：2005-05-05
申请号：US11011994
申请日：2004-12-14
申请人： Kochan Ju , Cheng Horng , Youfeng Zheng , Simon Liao , Jei-Wei Chang
发明人： Kochan Ju , Cheng Horng , Youfeng Zheng , Simon Liao , Jei-Wei Chang
IPC分类号： G01R33/09 , B05D7/00 , G11B5/127 , G11B5/187 , G11B5/29 , G11B5/31 , G11B5/33 , G11B5/39 , H01F10/16 , H01F10/30 , H01F10/32 , H01L43/08 , H01L43/12 , H04R31/00
CPC分类号： G11B5/33 , G11B5/29 , G11B5/31 , Y10T29/49037 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： Currently, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by inserting a high permeability, high resistivity, thin film shield on the top or bottom (or both) sides of the spin valve sensor. A permeability greater than about 500 is required together with a resistivity about 5 times greater than that of the free layer and an MrT value for the thin film shield that is 4 times greater than that of the free layer. Five embodiments of the invention are described.
摘要翻译：目前，自旋阀头的屏蔽到屏蔽分离不能低于约800，这主要是由于传感器到引线短路问题。现在已经通过在自旋阀传感器的顶部或底部（或两个）侧上插入高磁导率，高电阻率的薄膜屏蔽来克服这个问题。需要大于约500的磁导率，其电阻率大约为自由层的电阻率的约5倍，薄膜屏蔽层的电阻值大于自由层的4倍层。描述本发明的五个实施例。

40. 发明授权

US06770382B1 GMR configuration with enhanced spin filtering 失效
标题翻译： GMR配置与增强的自旋过滤
公开(公告)号：US06770382B1
公开(公告)日：2004-08-03
申请号：US09443447
申请日：1999-11-22
申请人： Jei-Wei Chang , Bernard Dieny , Mao-Min Chen , Cheng Horng , Kochan Ju , Simon Liao
发明人： Jei-Wei Chang , Bernard Dieny , Mao-Min Chen , Cheng Horng , Kochan Ju , Simon Liao
IPC分类号： G11B5127
CPC分类号： H01F10/30 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3133 , G11B5/3903 , G11B5/3909 , H01F10/3272 , H01L43/08 , Y10T428/1121 , Y10T428/1129 , Y10T428/1157 , Y10T428/1171 , Y10T428/12944 , Y10T428/2495
摘要： A Spin Valve GMR and Spin Filter SVGMR configuration where in the first embodiment an important buffer layer is composed of an metal oxide having a crystal lattice constant that is close the 1st FM free layer's crystal lattice constant and has the same crystal structure (e.g., FCC, BCC, etc.). The metal oxide buffer layer enhances the specular scattering. The spin valve giant magnetoresistance (SVGMR) sensor comprises: a seed layer over the substrate. An important metal oxide buffer layer (buffer layer) over the seed layer. The metal oxide layer preferably is comprised of NiO or alpha-Fe2O3. A free ferromagnetic layer over the metal oxide layer. A non-magnetic conductor spacer layer over the free ferromagnetic layer. A pinned ferromagnetic layer (2nd FM pinned) over the non-magnetic conductor spacer layer and a pinning material layer over the pinned ferromagnetic layer. In the second embodiment, a high conductivity layer (HCL) is formed over the buffer layer to create a spin filter -SVGMR. The HCL layer enhances the GMR ratio of the spin filter SVGMR. The third embodiment is a pinned FM layer comprised of a three layer structure of an lower AP layer, a spacer layer (e.g., Ru) and an upper AP layer.
摘要翻译：自旋阀GMR和自旋滤波器SVGMR配置，其中在第一实施例中，重要的缓冲层由具有接近第1个FM自由层的晶格常数的晶格常数的金属氧化物组成并且具有相同的晶体结构例如FCC，BCC等）。金属氧化物缓冲层增强了镜面散射。自旋阀巨磁阻（SVGMR）传感器包括：衬底上的种子层。种子层上重要的金属氧化物缓冲层（缓冲层）。金属氧化物层优选由NiO或α-Fe2O3组成。在金属氧化物层上的自由铁磁层。在自由铁磁层上的非磁性导体间隔层。在非磁性导体间隔层上方的钉扎铁磁层（第二个FM被钉住）和钉扎铁磁层上的钉扎材料层。在第二实施例中，在缓冲层上形成高电导率层（HCL）以产生自旋滤波器-SVGMR。 HCL层增强了旋转过滤器SVGMR的GMR比。第三实施例是由下AP层，间隔层（例如Ru）和上AP层组成的三层结构的钉扎FM层。

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