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31. 发明授权

US5690540A Spiral grooved polishing pad for chemical-mechanical planarization of semiconductor wafers 失效
标题翻译：螺旋槽抛光垫，用于半导体晶片的化学机械平面化
公开(公告)号：US5690540A
公开(公告)日：1997-11-25
申请号：US606418
申请日：1996-02-23
申请人： Richard L. Elliott , Michael A. Walker
发明人： Richard L. Elliott , Michael A. Walker
IPC分类号： B24B37/26 , B24D13/14 , B24B7/22
CPC分类号： B24B37/26
摘要： The present invention is a polishing pad for use in chemical-mechanical planarization of semiconductor wafers by placing a wafer against a polishing surface of the polishing pad while rotating the polishing pad about its center in the presence of a polishing slurry. The polishing surface has formed therein one or more grooves extending in a spiral inwardly from the periphery to the center of the polishing pad. As a result, slurry is transported inwardly toward the center or toward the periphery of the polishing pad depending upon the circumferential direction of the spiral relative to the direction of rotation of the polishing pad.
摘要翻译：本发明是一种用于半导体晶片的化学机械平面化的抛光垫，其通过在抛光浆料的存在下将抛光垫围绕其中心旋转而将抛光垫放置在抛光垫的抛光表面上。抛光表面在其中形成有从抛光垫的周边到中心螺旋向内延伸的一个或多个凹槽。结果，根据螺旋的周向相对于抛光垫的旋转方向，浆料向内朝向抛光垫的中心或朝向抛光垫的周边输送。

32. 发明授权

US5686038A Resin transfer molding of composite materials that emit volatiles during processing 失效
标题翻译：在加工过程中发出挥发物的复合材料的树脂传递模塑
公开(公告)号：US5686038A
公开(公告)日：1997-11-11
申请号：US466266
申请日：1995-06-06
申请人： Stephen Christensen , Michael A. Walker
发明人： Stephen Christensen , Michael A. Walker
IPC分类号： B29C33/10 , B29C33/38 , B29C70/48 , B29C45/14 , B29C45/34
CPC分类号： B29C33/10 , B29C70/48 , B29C33/3814
摘要： A method and apparatus for resin transfer molding composite materials that emit volatiles. The apparatus includes an RTM tool, a constant displacement injection pump, a heater connected to a power supply, one or more porous tool inserts, and one or more articulated tool inserts. The porous tool inserts are mounted within the RTM tool and allow volatiles produced during processing to flow through the inserts. The volatiles are drawn through the porous tool inserts and out through an exhaust port. The articulated tools are also mounted within the interior of the RTM tool. The articulated tools are movable in order to increase and decrease the volume of the RTM tool. As volatiles are emitted, the articulated tools are moved in order to decrease the volume of the tool. The articulate tools are also used to apply a consolidation force to the resin and fiber-reinforced preform within the tool. In accordance with a method of the invention, an unpolymerized thermoplastic resin is thinned with an appropriate solvent to an acceptable viscosity. The resin is then injected into the RTM tool using a constant displacement pump. The tool is then heated causing the resin to polymerize and emit volatiles. Volatiles are withdrawn through porous tool inserts within the tool. After the majority of volatiles are withdrawn, the resin is consolidated to form a composite part.
摘要翻译：一种发射挥发物的树脂传递模塑复合材料的方法和装置。该装置包括RTM工具，恒定位移注射泵，连接到电源的加热器，一个或多个多孔工具插入件和一个或多个铰接工具插入件。多孔工具刀片安装在RTM工具中，并允许在加工过程中产生的挥发物流过刀片。挥发物通过多孔工具插入物并通过排气口排出。铰接工具也安装在RTM工具的内部。铰接工具可移动以增加和减少RTM工具的体积。当挥发物被排出时，铰接的工具被移动以便减小工具的体积。铰接工具也用于对工具中的树脂和纤维增强预制件施加固结力。根据本发明的方法，将未聚合的热塑性树脂用合适的溶剂稀释至可接受的粘度。然后使用恒定排量泵将树脂注入RTM工具。然后加热该工具，使树脂聚合并发出挥发物。挥发物通过工具中的多孔工具插入物取出。大部分挥发物被取出后，树脂被固结形成复合部件。

33. 发明授权

US5270241A Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing 失效
标题翻译：优化的容器堆叠电容器DRAM单元利用牺牲氧化物沉积和化学机械抛光
公开(公告)号：US5270241A
公开(公告)日：1993-12-14
申请号：US973092
申请日：1992-11-06
申请人： Charles H. Dennison , Michael A. Walker
发明人： Charles H. Dennison , Michael A. Walker
IPC分类号： H01L21/02 , H01L21/70
CPC分类号： H01L28/91
摘要： An existing stacked capacitor fabrication process is modified to construct a three-dimensional stacked container capacitor. The present invention develops the container capacitor by etching an opening (or contact opening) into a low etch rate oxide. The contact opening is used as a form for deposited polysilicon that conforms to the sides of the opening walls. Within the thin poly lining of the oxide container a high etch-rate oxide, such as ozone TEOS, is deposited over the entire structure thereby bridging across the top of the oxide container. The high etch-rate oxide is planarized back to the thin poly and the resulting exposed poly is then removed to separate neighboring containers. The two oxides, having different etch rates, are then etched thereby leaving a free-standing poly container cell with 100% (or all) of the higher etch rate oxide removed and a pre-determined oxide surrounding the container still intact.
摘要翻译：修改现有的堆叠电容器制造工艺以构建三维堆叠容器电容器。本发明通过将开口（或接触开口）蚀刻成低蚀刻速率氧化物来开发容器电容器。接触开口用作与开口壁的侧面一致的沉积多晶硅的形式。在氧化物容器的薄多孔衬里内，在整个结构上沉积诸如臭氧TEOS的高蚀刻速率氧化物，从而桥接穿过氧化物容器的顶部。将高蚀刻速率的氧化物平面化回到薄的多晶硅上，然后除去所得到的暴露的聚合物以分离相邻的容器。然后蚀刻具有不同蚀刻速率的两种氧化物，从而留下独立的多容器电池，其具有100％（或全部）更高蚀刻速率的氧化物，并且包围容器的预定氧化物仍然完整。

34. 发明授权

US5162248A Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing 失效
标题翻译：优化的容器堆叠电容器DRAM单元利用牺牲氧化物沉积和化学机械抛光
公开(公告)号：US5162248A
公开(公告)日：1992-11-10
申请号：US850746
申请日：1992-03-13
申请人： Charles H. Dennison , Michael A. Walker
发明人： Charles H. Dennison , Michael A. Walker
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108
CPC分类号： H01L28/91
摘要： An existing stacked capacitor fabrication process is modified to construct a three-dimensional stacked container capacitor. The present invention develops the container capacitor by etching an opening (or contact opening) into a low etch rate oxide. The contact opening is used as a form for deposited polysilicon that conforms to the sides of the opening walls. Within the thin poly lining of the oxide container a high etch-rate oxide, such as ozone TEOS, is deposited over the entire structure thereby bridging across the top of the oxide container. The high etch-rate oxide is planarized back to the thin poly and the resulting exposed poly is then removed to separate neighboring containers. The two oxides, having different etch rates, are then etched thereby leaving a free-standing poly container cell with 100% (or all) of the higher etch rate oxide removed and a pre-determined oxide surrounding the container still intact.
摘要翻译：修改现有的堆叠电容器制造工艺以构建三维堆叠容器电容器。本发明通过将开口（或接触开口）蚀刻成低蚀刻速率氧化物来开发容器电容器。接触开口用作与开口壁的侧面一致的沉积多晶硅的形式。在氧化物容器的薄多孔衬里内，在整个结构上沉积诸如臭氧TEOS的高蚀刻速率氧化物，从而桥接穿过氧化物容器的顶部。将高蚀刻速率的氧化物平面化回到薄的多晶硅上，然后除去所得到的暴露的聚合物以分离相邻的容器。然后蚀刻具有不同蚀刻速率的两种氧化物，从而留下独立的多容器电池，其具有100％（或全部）更高蚀刻速率的氧化物，并且包围容器的预定氧化物仍然完整。

35. 发明申请

US20120309745A1 HIV Integrase Inhibitors 有权
标题翻译： HIV整合酶抑制剂
公开(公告)号：US20120309745A1
公开(公告)日：2012-12-06
申请号：US13313423
申请日：2011-12-07
申请人： Kevin Peese , B. Narasimhulu Naidu , Manoj Patel , Chen Li , Michael A. Walker
发明人： Kevin Peese , B. Narasimhulu Naidu , Manoj Patel , Chen Li , Michael A. Walker
IPC分类号： A61K31/55 , A61P31/18 , C07D487/08
CPC分类号： C07D487/04
摘要： The disclosure generally relates to the novel compounds of formula I, including their salts, which inhibit HIV integrase and prevent viral integration into human DNA. This action makes the compounds useful for treating HIV infection and AIDS. The invention also encompasses pharmaceutical compositions and methods for treating those infected with HIV.
摘要翻译：本公开一般涉及式I的新化合物，包括其盐，其抑制HIV整合酶并防止病毒整合入人DNA。这种作用使这些化合物可用于治疗艾滋病毒和艾滋病。本发明还包括用于治疗感染HIV的那些的药物组合物和方法。

36. 发明授权

US08129398B2 HIV integrase inhibitors 有权
标题翻译： HIV整合酶抑制剂
公开(公告)号：US08129398B2
公开(公告)日：2012-03-06
申请号：US12406268
申请日：2009-03-18
申请人： Francis Beaulieu , Carl Ouellet , B. Narasimhulu Naidu , Manoj Patel , Yasutsugu Ueda , Timothy P. Connolly , Jonathan R. Weiss , Michael A. Walker , Nicholas A. Meanwell , Kevin M. Peese , Margaret E. Sorenson , Chen Li
发明人： Francis Beaulieu , Carl Ouellet , B. Narasimhulu Naidu , Manoj Patel , Yasutsugu Ueda , Timothy P. Connolly , Jonathan R. Weiss , Michael A. Walker , Nicholas A. Meanwell , Kevin M. Peese , Margaret E. Sorenson , Chen Li
IPC分类号： A61K31/505 , C07D487/12
CPC分类号： C07D498/18 , C07D471/08 , C07D471/18 , C07D487/08 , C07D493/18
摘要： The disclosure generally relates to the novel compounds of formula I, including their salts, which inhibit HIV integrase and prevent viral integration into human DNA. This action makes the compounds useful for treating HIV infection and AIDS. The invention also encompasses pharmaceutical compositions and methods for treating those infected with HIV.
摘要翻译：本公开一般涉及式I的新化合物，包括其盐，其抑制HIV整合酶并防止病毒整合入人DNA。这种作用使这些化合物可用于治疗艾滋病毒和艾滋病。本发明还包括用于治疗感染HIV的那些的药物组合物和方法。

37. 发明授权

US08039458B2 HIV integrase inhibitors 有权
公开(公告)号：US08039458B2
公开(公告)日：2011-10-18
申请号：US11590637
申请日：2006-10-31
申请人： B. Narasimhulu Naidu , Yasutsugu Ueda , John D. Matiskella , Michael A. Walker , Jacques Banville , Francis Beaulieu , Carl Ouellet , Serge Plamondon
发明人： B. Narasimhulu Naidu , Yasutsugu Ueda , John D. Matiskella , Michael A. Walker , Jacques Banville , Francis Beaulieu , Carl Ouellet , Serge Plamondon
IPC分类号： A61P31/18 , A61K31/397 , A61K31/553 , C07D267/02 , C07D413/00
CPC分类号： C07D498/04 , C07D498/10 , C07D498/20
摘要： The invention encompasses a series bicyclic pyrimidinone compounds of Formula I which inhibit HIV integrase and prevent viral integration into human DNA. This action makes the compounds useful for treating HIV infection and AIDS. The invention also encompasses pharmaceutical compositions and methods for treating those infected with HIV.

38. 发明授权

US07825450B2 Sacrificial self-aligned interconnect structures 有权
标题翻译：牺牲自对准互连结构
公开(公告)号：US07825450B2
公开(公告)日：2010-11-02
申请号：US12205019
申请日：2008-09-05
申请人： Michael A. Walker , Karl M. Robinson
发明人： Michael A. Walker , Karl M. Robinson
IPC分类号： H01L27/108 , H01L29/94
CPC分类号： H01L21/76895 , H01L21/743 , H01L21/76897 , H01L23/535 , H01L27/10855 , H01L28/60 , H01L2924/0002 , H01L2924/00
摘要： A sacrificial, self-aligned polysilicon interconnect structure is formed in a region of insulating material adjacent to an active region location and underlying a semiconductor device of a substrate assembly in order to electrically connect the active region and the semiconductor device. A preexisting geometry of the active region is maintained during etching of an interconnect structure hole in which the interconnect structure is formed and saves process steps. Under the method, a region of insulating material is formed immediately adjacent the active region location. A nitride layer is formed over the active region and protects the active region while an interconnect structure hole is etched partially into the region of insulating material adjacent the active region location with an etching process that is selective to the nitride layer. The interconnect structure hole is filled with polysilicon, the surface of the substrate assembly is planarized, and the nitride layer is removed.
摘要翻译：牺牲的自对准多晶硅互连结构形成在与有源区位置相邻并且位于衬底组件的半导体器件下方的绝缘材料的区域中，以便电连接有源区和半导体器件。在蚀刻形成互连结构的互连结构孔期间维持有源区的预先存在的几何形状并且节省了工艺步骤。在该方法下，绝缘材料的区域紧邻有源区位置形成。在有源区上形成氮化物层并保护有源区，同时利用对氮化物层有选择性的蚀刻工艺将互连结构孔部分地蚀刻到与有源区位置相邻的绝缘材料区域内。互连结构孔填充有多晶硅，衬底组件的表面被平坦化，并且氮化物层被去除。

39. 发明授权

US07329917B2 Permeable capacitor electrode 有权
标题翻译：透明电容电极
公开(公告)号：US07329917B2
公开(公告)日：2008-02-12
申请号：US11414661
申请日：2006-04-27
申请人： Robert D. Patraw , Michael A. Walker
发明人： Robert D. Patraw , Michael A. Walker
IPC分类号： H01L27/108
CPC分类号： H01L27/10852 , H01L21/31111 , H01L27/10817 , H01L28/90 , H01L28/91 , Y10S438/972
摘要： The present teachings describe a container capacitor that utilizes an etchant permeable lower electrode for the formation of single or double-sided capacitors without excessive etching back of the periphery of the use of sacrificial spacers. The present teachings further describe a method of forming at least one capacitor structure on a substrate. For example, the method comprises forming at least one recess in the substrate, depositing a first conductive layer on the substrate so as to overlie the at least one recess, and defining at least one lower electrode within the at least one recess formed in the substrate by removing at least a portion of the first conductive layer. The method further comprises diffusing an etchant through the at least one lower electrode so as to remove at least a portion of the substrate to thereby at least partially isolate the at least one lower electrode. The method still further comprises depositing a dielectric layer on the at least one isolated lower electrode and depositing a second conductive layer on the dielectric layer so as to form an upper electrode.
摘要翻译：本教导描述了容器电容器，其利用蚀刻剂可渗透的下电极来形成单面或双面电容器，而不会使用牺牲间隔物的周边进行过度的蚀刻。本教导进一步描述了在衬底上形成至少一个电容器结构的方法。例如，该方法包括在衬底中形成至少一个凹槽，在衬底上沉积第一导电层以覆盖至少一个凹部，并且在形成于衬底中的至少一个凹部内限定至少一个下电极通过去除第一导电层的至少一部分。所述方法还包括通过所述至少一个下电极扩散蚀刻剂，以便去除所述衬底的至少一部分，从而至少部分隔离所述至少一个下电极。该方法还包括在所述至少一个隔离的下电极上沉积介电层并在所述电介质层上沉积第二导电层以便形成上电极。

40. 发明授权

US07192948B2 Bicyclic heterocycles as HIV integrase inhibitors 有权
公开(公告)号：US07192948B2
公开(公告)日：2007-03-20
申请号：US11138726
申请日：2005-05-26
申请人： Jacques Banville , Gilles Bouthillier , B. Narasimhulu Naidu , Roger Remillard , Michael A. Walker
发明人： Jacques Banville , Gilles Bouthillier , B. Narasimhulu Naidu , Roger Remillard , Michael A. Walker
IPC分类号： A61K31/554 , A61K31/519 , A61K31/541 , C07D279/02 , C07D487/04 , C07D281/02 , A61P31/20 , C07D239/66
CPC分类号： C07D487/04 , C07D513/04
摘要： The invention encompasses a series cyclic bicyclic heterocyclic compounds of Formula I which are inhibitors of HIV integrase and prevent viral integration into human DNA. This action makes the compounds useful for treating HIV infection and AIDS. The invention also encompasses pharmaceutical compositions and methods for treating those infected with HIV

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