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    • 35. 发明申请
    • Ion exchange equipment
    • 离子交换设备
    • US20090114583A1
    • 2009-05-07
    • US11989633
    • 2006-08-22
    • Tsuyoshi YonedaSaburo NakamuraHajime AbeKatsufumi IsshikiHiroki OhnoGen Sato
    • Tsuyoshi YonedaSaburo NakamuraHajime AbeKatsufumi IsshikiHiroki OhnoGen Sato
    • B01J47/02
    • C02F1/42B01J47/022B01J49/75
    • Ion exchange equipment which can deal with counter-flow regeneration or split-flow regeneration while simplifying a water collector. The ion exchange equipment comprises a first water collection pipe (14) communicating with a first channel (10) formed in a lid member (7) at a resin containing section (2), and second water collection pipe (20) communicating with a second channel (11) formed in the lid member (7), wherein an inner diameter of the second water collection pipe (20) is set larger than an outer diameter of the first water collection pipe (14). The water collection pipes (14, 20) have axes set coaxially with the axis of the resin containing section (2) and form a double pipe, and a third channel (12) communicating with the resin containing section (2) is formed in the lid member (7).
    • 离子交换设备可以在简化集水器的同时处理逆流再生或分流再生。 离子交换设备包括:第一采水管(14),其与形成在树脂容纳部分(2)的盖构件(7)中的第一通道(10)连通;以及第二采水管(20),其与第二采水管 形成在所述盖部件(7)中的通道(11),其中所述第二吸水管(20)的内径设定为大于所述第一吸水管(14)的外径。 集水管(14,20)具有与树脂容纳部分(2)的轴线同轴的轴并形成双管,并且在该收集管中形成与树脂容纳部分(2)连通的第三通道(12) 盖构件(7)。
    • 37. 发明申请
    • Radio relay device
    • 无线中继设备
    • US20050136956A1
    • 2005-06-23
    • US10744526
    • 2003-12-23
    • Hiroki Ohno
    • Hiroki Ohno
    • H04B7/155H04B15/00
    • H04B7/155
    • The object of the present invention is to provide a radio relay device for suppressing the deterioration of voice signals which is generated by relaying radio communication between digital radio units. To achieve this object, the radio relay device of the present invention comprises a radio section for transmitting/receiving ADPCM-coded digital radio signals, a demodulation section for demodulating the digital radio signals received by the radio section and acquiring ADPCM codes, a voice quality improvement circuit for removing the clicking noises included in the ADPCM codes which were demodulated by the demodulation section, and a modulation section for modulating the ADPCM codes after the clicking noises are removed by the voice quality improvement circuit, and supplying the modulation signals to the radio section.
    • 本发明的目的是提供一种用于抑制通过中继数字无线电单元之间的无线电通信而产生的话音信号的恶化的无线电中继装置。 为了实现该目的,本发明的无线中继装置包括:用于发送/接收ADPCM编码的数字无线电信号的无线电部分,用于解调由无线电部分接收的数字无线电信号并获取ADPCM码的解调部分,语音质量 用于去除由解调部分解调的ADPCM代码中包含的点击噪声的改进电路,以及用于通过语音质量改善电路去除点击噪声之后的ADPCM码的调制部分,并将调制信号提供给无线电 部分。
    • 40. 发明授权
    • Washing liquid for post-polishing and polishing-cleaning method in
semiconductor process
    • 用于后抛光的洗涤液和半导体工艺中的抛光清洗方法
    • US5830280A
    • 1998-11-03
    • US818724
    • 1997-03-14
    • Yoshihide SatoTakayuki KomiyaHiroki Ohno
    • Yoshihide SatoTakayuki KomiyaHiroki Ohno
    • H01L21/02H01L21/304H01L21/306H01L21/308H01L21/321C03C23/00
    • H01L21/02074H01L21/3212
    • A polishing treatment called CMP (chemical mechanical polishing) is utilized for filling a contact hole formed in a silicon oxide film with a metallic layer in a manufacturing process of a semiconductor device. After a CMP treatment, a target surface, on which the silicon oxide film and the metallic layer are exposed, is washed with a washing liquid so as to remove residues due to the CMP treatment. The washing liquid comprises a fluorine compound for providing an etchant for the silicon oxide film and the metallic layer, and a protective agent which can be adhered onto a surface of the metallic layer so as to form a protective film. The ratio between the fluorine compound and the protective agent is set such that etching rates of the silicon oxide film and the metallic layer to be effected by the washing liquid fall within ranges of from 0.5 nm/min to 5 nm/min and from 0.5 nm/min to 6 nm/min, respectively, and a ratio between these etching rates falls within a range of from "2:1" to "1:3".
    • 在半导体器件的制造工艺中,利用称为CMP(化学机械抛光)的抛光处理来填充形成在具有金属层的氧化硅膜中的接触孔。 在CMP处理之后,用清洗液清洗其上露出氧化硅膜和金属层的目标表面,以便除去由CMP处理引起的残留物。 洗涤液包含用于提供氧化硅膜和金属层的蚀刻剂的氟化合物,以及可以粘附在金属层的表面上以形成保护膜的保护剂。 氟化合物和保护剂之间的比率设定为使得由洗涤液体进行的氧化硅膜和金属层的蚀刻速率在0.5nm / min至5nm / min和0.5nm的范围内 /分钟〜6nm /分钟,这些蚀刻速度之间的比例落入“2:1”至“1:3”的范围内。