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31. 发明申请

US20110292103A1 IMAGE FORMING APPARATUS AND METHOD OF INKJET HAVING HUMIDITY ADJUSTMENT MECHANISM 审中-公开
标题翻译：图像形成装置和具有湿度调节机构的喷墨方法
公开(公告)号：US20110292103A1
公开(公告)日：2011-12-01
申请号：US13118832
申请日：2011-05-31
申请人： Takashi Hatakeyama , Atsushi Kubota , Nobuaki Takahashi
发明人： Takashi Hatakeyama , Atsushi Kubota , Nobuaki Takahashi
IPC分类号： B41J29/38
CPC分类号： B41J11/0015
摘要： According to one embodiment, an inkjet image forming apparatus includes an inkjet head configured to discharge water-based ink and form an image on a surface of a recording medium, a medium conveyance part configured to convey the recording medium, a solution imparting part that is disposed upstream of the inkjet head in a recording medium conveyance direction and uses another inkjet head to impart a solution to the surface of the recording medium on which the image is formed, and a controller configured to calculate an imparting amount of the solution to be imparted to the recording medium and control an imparting operation to the recording medium.
摘要翻译：根据一个实施例，喷墨图像形成装置包括：喷墨头，被配置为排出水基油墨并在记录介质的表面上形成图像;介质输送部，构造成输送记录介质;溶液赋予部，设置在记录介质传送方向上的喷墨头的上游，并且使用另一个喷墨头将溶液赋予其上形成有图像的记录介质的表面;以及控制器，被配置为计算要赋予的溶液的赋予量并且控制对记录介质的赋予操作。

32. 发明授权

US07892973B2 Method for manufacturing a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07892973B2
公开(公告)日：2011-02-22
申请号：US12605586
申请日：2009-10-26
申请人： Masaya Kawano , Koji Soejima , Nobuaki Takahashi
发明人： Masaya Kawano , Koji Soejima , Nobuaki Takahashi
IPC分类号： H01L21/44
CPC分类号： H01L21/76898 , H01L23/481 , H01L2224/13 , H01L2224/13025 , H01L2224/14181
摘要： A falling off of a through electrode is inhibited without decreasing a reliability of a semiconductor device including a through electrode. A semiconductor device 100 includes: a silicon substrate 101; a through electrode 129 extending through the silicon substrate 101; and a first insulating ring 130 provided in a circumference of a side surface of the through electrode 129 and extending through the semiconductor substrate 101. In addition, the semiconductor device 100 also includes a protruding portion 146, being provided at least in the vicinity of a back surface of a device-forming surface of the semiconductor substrate 101 so as to contact with the through electrode 129, and protruding in a direction along the surface of the semiconductor substrate 101 toward an interior of the through electrode 129.
摘要翻译：在不降低包括通孔的半导体器件的可靠性的情况下，抑制穿通电极的脱落。半导体器件100包括：硅衬底101; 穿过硅衬底101的通孔电极129; 以及设置在贯通电极129的侧面的周围并延伸穿过半导体基板101的第一绝缘环130.此外，半导体器件100还包括突出部分146，其设置在至少在半导体衬底101的器件形成表面的背表面与通孔129接触，并沿着半导体衬底101的表面朝向通孔129的内部突出。

33. 发明申请

US20110038128A1 ELECTRONIC PACKAGE, DISPLAY, AND ELECTRONIC DEVICE 有权
标题翻译：电子包装，显示器和电子设备
公开(公告)号：US20110038128A1
公开(公告)日：2011-02-17
申请号：US12988990
申请日：2009-03-02
申请人： Kohei Kitagawa , Nobuaki Takahashi , Masahiro Imai , Koichi Yoshioka
发明人： Kohei Kitagawa , Nobuaki Takahashi , Masahiro Imai , Koichi Yoshioka
IPC分类号： H05K1/00 , H05K5/00
CPC分类号： H05K1/0215 , G02F1/133308 , G02F1/13452 , G02F2001/133314 , G02F2001/133317 , G02F2001/13332 , G02F2001/133322 , G02F2001/133325 , G02F2001/133334 , G02F2201/465 , H05K1/0393 , H05K2201/10393
摘要： An FPC board (1) is mounted on a front bezel (BZ1) and a rear bezel (BZ2). The outer claw (CW1) of the front bezel (BZ1) and the inner claw (CW2) of the rear bezel (BZ2) are engaged with each other while holding the ground portion (12) of the FPC board (1) therebetween.
摘要翻译： FPC板（1）安装在前挡板（BZ1）和后挡板（BZ2）上。前面板（BZ1）的外爪（CW1）和后边框（BZ2）的内爪（CW2）彼此接合，同时保持FPC基板（1）的接地部分（12）。

34. 发明申请

US20100234578A1 ANTI-CD40 MONOCLONAL ANTIBODY 审中-公开
标题翻译：抗CD40单克隆抗体
公开(公告)号：US20100234578A1
公开(公告)日：2010-09-16
申请号：US12729997
申请日：2010-03-23
申请人： Toshifumi Mikayama , Hitoshi Yoshida , Walker R. Force , Xingjie Chen , Nobuaki Takahashi
发明人： Toshifumi Mikayama , Hitoshi Yoshida , Walker R. Force , Xingjie Chen , Nobuaki Takahashi
IPC分类号： C07K16/18
CPC分类号： C07K16/2878 , A61K2039/505 , C07K2317/21 , C07K2319/00 , C07K2319/30
摘要： An antibody or a functional fragment thereof, acting agonistically or antagonistically on CD40.
摘要翻译：一种抗体或其功能片段，在CD40上起激动作用或拮抗作用。

35. 发明申请

US20100171804A1 IMAGE RECORDING APPARATUS 审中-公开
标题翻译：图像记录装置
公开(公告)号：US20100171804A1
公开(公告)日：2010-07-08
申请号：US12644419
申请日：2009-12-22
申请人： Nobuaki Takahashi , Atsushi Kubota , Kazuhiko Ohtsu , Satoshi Kaiho , Takashi Kado
发明人： Nobuaki Takahashi , Atsushi Kubota , Kazuhiko Ohtsu , Satoshi Kaiho , Takashi Kado
IPC分类号： B41J2/01
CPC分类号： B41J11/0085 , B41J11/0025 , B41J11/007
摘要： An image recording apparatus includes a conveyance unit which includes a conveyance belt and an air suction unit for sucking air through the conveyance belt to adsorb a recording medium onto the conveyance belt. A recording head ejects ink to carry out recording on the recording medium conveyed by the conveyance unit. An adsorption force adjusting unit adjusts the adsorption force for the recording medium on the conveyance belt, which occurs by sucking air, according to the size of the recording medium.
摘要翻译：图像记录装置包括输送单元，该输送单元包括输送带和吸气单元，用于通过输送带吸入空气以将记录介质吸附到输送带上。记录头喷射墨水以在由输送单元输送的记录介质上进行记录。吸附力调节单元根据记录介质的尺寸来调节通过吸入空气发生的输送带上的记录介质的吸附力。

36. 发明申请

US20100144091A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20100144091A1
公开(公告)日：2010-06-10
申请号：US12656616
申请日：2010-02-04
申请人： Masaya Kawano , Koji Soejima , Nobuaki Takahashi , Yoichiro Kurita , Masahiro Komuro , Satoshi Matsui
发明人： Masaya Kawano , Koji Soejima , Nobuaki Takahashi , Yoichiro Kurita , Masahiro Komuro , Satoshi Matsui
IPC分类号： H01L21/50
CPC分类号： H01L25/0657 , H01L21/76898 , H01L23/3128 , H01L23/481 , H01L23/562 , H01L23/642 , H01L25/50 , H01L2221/68345 , H01L2223/6622 , H01L2224/16145 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2225/06513 , H01L2225/06517 , H01L2225/06524 , H01L2225/06541 , H01L2225/06572 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/10155 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012
摘要： A method of manufacturing a semiconductor device includes forming an interconnect member, mounting a first semiconductor chip having a semiconductor substrate in a face-down manner on the interconnect member, forming a resin layer on the interconnect member to cover a side surface of the first semiconductor chip, thinning the first semiconductor chip and the resin layer, forming an inorganic insulating layer on a back surface of the first semiconductor chip so as to be in contact with the back surface and to extend over the resin layer, and forming a through electrode so as to penetrate the inorganic insulating layer and the semiconductor substrate.
摘要翻译：一种制造半导体器件的方法包括形成互连部件，将具有半导体衬底的第一半导体芯片以面向下的方式安装在互连部件上，在互连部件上形成树脂层以覆盖第一半导体的侧表面芯片，使第一半导体芯片和树脂层变薄，在第一半导体芯片的背面上形成无机绝缘层，以与背面接触并延伸到树脂层上，并形成通孔，从而形成通孔以穿透无机绝缘层和半导体衬底。

37. 发明申请

US20090199612A1 Hot bend pipe and a process for its manufacture 有权
标题翻译：热弯管及其制造工艺
公开(公告)号：US20090199612A1
公开(公告)日：2009-08-13
申请号：US12318882
申请日：2009-01-12
申请人： Nobuaki Takahashi , Akio Yamamoto , Masahiko Hamada
发明人： Nobuaki Takahashi , Akio Yamamoto , Masahiko Hamada
IPC分类号： B21D9/00 , B21D9/05
CPC分类号： B21C37/08 , B23K33/006 , B23K2101/06 , B23K2103/04 , C21D9/08 , C21D9/50 , C22C38/02 , C22C38/04 , C22C38/06
摘要： A high-strength hot bend pipe which has a balance between an excellent strength of at least X70 grade and toughness and which has excellent tensile properties and a weld metal with excellent low temperature toughness is manufactured. A UOE steel pipe having a base metal with a composition of C: 0.03-0.12%, Si: 0.05-0.50%, Mn: 1.4-2.2%, S: at most 0.01%, Al: at most 0.06%, N: at most 0.008%, and a remainder of Fe and impurities, with the carbon equivalent (Ceq) being at most 0.36% and the weld cracking parameter (Pcm) being at most 0.22%, and having a weld metal with a weld cracking parameter (Pcm) of at most 0.28%, a B content of at most 5 ppm, and an O content of at most 280 ppm is heated to a temperature range of 900-1100° C. and subjected to bending, and then is immediately cooled to a temperature range of 300° C. or lower at a cooling rate of at least 3° C./sec, and then is tempered in a temperature range of 300-500° C.
摘要翻译：制造具有至少X70等级的优异强度和具有优异的拉伸性能的优异强度与具有优异的低温韧性的焊接金属之间的平衡的高强度热弯管。具有组成为C：0.03〜0.12％，Si：0.05〜0.50％，Mn：1.4〜2.2％，S：0.01％以下，Al：0.06％以下的贱金属的UOE钢管，N：最多0.008％，余量为Fe和杂质，碳当量（Ceq）最大为0.36％，焊接裂纹参数（Pcm）为0.22％以下，具有焊缝裂纹参数（Pcm ）为0.28％以下，B含量为5ppm以下，O含量为280ppm以下，加热到900〜1100℃的温度范围，进行弯曲，然后立即冷却至温度范围为300℃以下，冷却速度为3℃/秒以上，然后在300-500℃的温度范围内回火。

38. 发明授权

US07537763B2 Anti-CD40 monoclonal antibody 有权
标题翻译：抗CD40单克隆抗体
公开(公告)号：US07537763B2
公开(公告)日：2009-05-26
申请号：US11633716
申请日：2006-12-05
申请人： Toshifumi Mikayama , Hitoshi Yoshida , Walker R. Force , Xingjie Chen , Nobuaki Takahashi
发明人： Toshifumi Mikayama , Hitoshi Yoshida , Walker R. Force , Xingjie Chen , Nobuaki Takahashi
IPC分类号： A61K39/395 , C07K16/28 , C12N5/12 , C12N15/13
CPC分类号： C07K16/2878 , A61K2039/505 , C07K2317/21 , C07K2319/00 , C07K2319/30
摘要： An antibody or a functional fragment thereof, acting agonistically or antagonistically on CD40.
摘要翻译：一种抗体或其功能片段，在CD40上起激动作用或拮抗作用。

39. 发明申请

US20080224271A1 Semiconductor Device and Method of Manufacturing Same, Wiring Board and Method of Manufacturing Same, Semiconductor Package, and Electronic Device 审中-公开
标题翻译：半导体器件及其制造方法，接线板及其制造方法，半导体封装和电子器件
公开(公告)号：US20080224271A1
公开(公告)日：2008-09-18
申请号：US11722702
申请日：2005-12-21
申请人： Yoshimichi Sogawa , Takao Yamazaki , Ichirou Hazeyama , Sakae Kitajou , Nobuaki Takahashi
发明人： Yoshimichi Sogawa , Takao Yamazaki , Ichirou Hazeyama , Sakae Kitajou , Nobuaki Takahashi
IPC分类号： H01L23/48 , H05K1/00 , H05K3/42 , H01L21/4763
CPC分类号： H01L23/481 , H01L21/76898 , H01L23/3171 , H01L25/0657 , H01L25/50 , H01L2224/05001 , H01L2224/05009 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/0557 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/13025 , H01L2224/16145 , H01L2225/06513 , H01L2225/06541 , H01L2924/1433 , H01L2924/19041 , Y10T29/49165 , H01L2924/013 , H01L2924/00014
摘要： Passivation films 3a, 3b are formed to cover both surfaces of semiconductor substrate 1 which comprises terminal pads 2a, 2b on both surfaces. Openings 3c, 3d are provided at positions on passivation films 3a, 3b which match with terminal pads 2a, 2b. Throughholes 9 are formed inside of openings 3c, 3d to extend through terminal pad 2a, semiconductor substrate 1, and terminal pad 2b. Insulating layer 4 made of SiO2, SiN, SiO, or the like is formed on the inner surfaces of throughholes 9. Buffer layer 5 made of a conductive adhesive is formed to cover insulating layer 4 and terminal pads 2a, 2b in openings 3c, 3d. Further, conductive layer 6 made of a metal film is formed on buffer layer 5 by electrolytic plating, non-electrolytic plating, or the like.
摘要翻译：钝化膜3a，3b形成为覆盖包括两个表面上的端子焊盘2a，2b的半导体衬底1的两个表面。在与端子焊盘2a，2b配合的钝化膜3a，3b上的位置设置开口3c，3d。通孔9形成在开口3c，3d的内部，以延伸通过端子焊盘2a，半导体衬底1和端子焊盘2b。在通孔9的内表面上形成由SiO 2，SiN，SiO等构成的绝缘层4。形成由导电粘合剂制成的缓冲层5以覆盖开口3c，3d中的绝缘层4和端子焊盘2a，2b。此外，通过电解电镀，非电解电镀等在缓冲层5上形成由金属膜制成的导电层6。

40. 发明申请

US20080005622A1 Digital Signal Measuring Apparatus and Traffic Observing Method 审中-公开
标题翻译：数字信号测量仪和交通观测方法
公开(公告)号：US20080005622A1
公开(公告)日：2008-01-03
申请号：US11839994
申请日：2007-08-16
申请人： Nobuaki Takahashi , Takeo Nakada , Nobuyuki Ohba
发明人： Nobuaki Takahashi , Takeo Nakada , Nobuyuki Ohba
IPC分类号： H04L1/22 , G06F3/00
CPC分类号： H04L1/24 , H04L2001/0094
摘要： A digital signal measuring apparatus comprises a bus probe unit for extracting a bus event occurring on a bus based on a digital bus signal on the bus of the system to be measured, a traffic measuring unit for counting the number of occurrences of bus event based on the occurrence information of the extracted bus event, and a console unit for acquiring and processing the count value of the traffic measuring unit.
摘要翻译：一种数字信号测量装置，包括：总线探测单元，用于基于待测量系统的总线上的数字总线信号，提取总线上发生的总线事件;一个业务量测量单元，用于对总线事件的发生次数进行计数，基于所提取的总线事件的发生信息，以及用于获取和处理交通量测量单元的计数值的控制台单元。

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