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31. 发明申请

US20100155516A1 Powder Processing Apparatus 有权
标题翻译：粉末加工设备
公开(公告)号：US20100155516A1
公开(公告)日：2010-06-24
申请号：US12718614
申请日：2010-03-05
申请人： Makio Naito , Hiroya Abe , Kiyoshi Nogi , Masuo Hosokawa , Takehisa Fukui , Masahiro Yoshikawa
发明人： Makio Naito , Hiroya Abe , Kiyoshi Nogi , Masuo Hosokawa , Takehisa Fukui , Masahiro Yoshikawa
IPC分类号： B02C19/18 , B02C15/06 , B02C23/18
CPC分类号： B02C19/10 , B01J2/14 , B01J2/18 , B02C19/18 , B22F9/14 , Y10S241/14
摘要： In order to manufacture the compound powder or the porous granulated substance in an efficient manner, a powder processing apparatus has an accumulating face on which the processing target powder is to be accumulated and a processing face disposed in opposition to the accumulating face and convexly curved, and a moving means for moving the accumulating face and the processing face along the accumulating face relative to each other. The apparatus comprises an excitement treatment means capable of applying an excitation energy to the processing target powder accumulated on the accumulating face from an excitation energy supplying portion disposed in opposition to the accumulating face or an oscillation means for oscillating the accumulating face or the processing face in a direction intersecting the accumulating face.
摘要翻译：为了有效地制造复合粉末或多孔粒状物质，粉末处理装置具有要积聚处理目标粉末的积聚面和与聚集面相对设置且凸起弯曲的处理面，以及用于相对于彼此沿累积面移动累积面和处理面的移动装置。该装置包括能够从与积聚面相对设置的激发能量供给部分积聚在积聚面上的处理目标粉末施加激发能的兴奋处理装置，或者使振动装置使振动积存面或处理面的振动装置与积聚面相交的方向。

32. 发明申请

US20080279245A1 VCSEL, OPTICAL DEVICE, LIGHT IRRADIATION DEVICE, DATA PROCESSING DEVICE, LIGHT SOURCE, FREE SPACE OPTICAL COMMUNICATION DEVICE, AND OPTICAL TRANSMISSION SYSTEM 有权
标题翻译： VCSEL，光学装置，光照射装置，数据处理装置，光源，自由空间光通信装置和光传输系统
公开(公告)号：US20080279245A1
公开(公告)日：2008-11-13
申请号：US12110448
申请日：2008-04-28
申请人： Masateru Yamamoto , Masahiro Yoshikawa , Takashi Kondo
发明人： Masateru Yamamoto , Masahiro Yoshikawa , Takashi Kondo
IPC分类号： H01S5/183
CPC分类号： H01S5/18308 , B41J2/45 , H01S5/02284 , H01S5/02288 , H01S5/06804 , H01S5/0683 , H01S5/18311 , H01S5/1833 , H01S5/18336
摘要： A VCSEL includes a first distributed Bragg reflector (DBR) of a first conductivity type formed on a substrate and including at least one semiconductor layer to be oxidized, an active region having a column shaped structure and formed on the first DBR, and a second DBR of a second conductivity type. At least one hole starting from a surface of the first DBR and reaching the at least one semiconductor layer to be oxidized is formed in the first DBR outside of a column shaped structure of the second DBR. An oxidized region is formed in the semiconductor layer to be oxidized by selectively oxidizing from a side surface of the hole. In the first DBR, a first current path is formed by a conductive region surrounded by the oxidized region, and a second current path is formed by a conductive region not surrounded by the oxidized region.
摘要翻译： VCSEL包括第一导电类型的第一分布布拉格反射器（DBR），其形成在衬底上并且包括至少一个要被氧化的半导体层，形成在第一DBR上的具有柱状结构的有源区和第二DBR 的第二导电类型。从第一DBR的表面开始并到达要被氧化的至少一个半导体层的至少一个孔形成在第二DBR的列形结构外侧的第一DBR中。通过从孔的侧面选择性氧化，在半导体层中形成被氧化的氧化区域。在第一DBR中，第一电流路径由被氧化区域包围的导电区域形成，并且第二电流路径由未被氧化区域包围的导电区域形成。

33. 发明申请

US20080056323A1 VCSEL, manufacturing method thereof, module, light sending device, optical spatial transmission device, light sending system, and optical spatial transmission system 有权
标题翻译： VCSEL及其制造方法，模块，发光装置，光学空间传输装置，发光系统和光学空间传输系统
公开(公告)号：US20080056323A1
公开(公告)日：2008-03-06
申请号：US11803468
申请日：2007-05-15
申请人： Masahiro Yoshikawa , Masateru Yamamoto , Takashi Kondo
发明人： Masahiro Yoshikawa , Masateru Yamamoto , Takashi Kondo
IPC分类号： H01S5/183
CPC分类号： H01S5/18311 , B82Y20/00 , H01S5/02284 , H01S5/02288 , H01S5/0425 , H01S5/18375 , H01S5/18377 , H01S5/18383 , H01S5/18394 , H01S5/34313 , H01S2301/166
摘要： A VCSEL includes a substrate, a first semiconductor multilayer of a first conductivity-type, an active layer, a second semiconductor multilayer of a second conductivity-type, a contact layer, each of the layers stacked on the substrate. The second semiconductor multilayer constitutes a resonator together with the active layer and the first semiconductor multilayer. A metal layer is formed on the contact layer. The metal layer includes an opening portion that defines a region that emits laser light. When oscillation wavelength of the laser light is λ, optical thickness T of the contact layer and a top layer of the second semiconductor multilayer that contacts with the contact layer is smaller than λ/4.
摘要翻译： VCSEL包括基板，第一导电类型的第一半导体多层，有源层，第二导电类型的第二半导体层，接触层，层叠在基板上。第二半导体多层与有源层和第一半导体多层构成谐振器。在接触层上形成金属层。金属层包括限定发射激光的区域的开口部分。当激光的振荡波长为λ时，接触层的光学厚度T和与接触层接触的第二半导体多层的顶层小于λ/ 4。

34. 发明申请

US20060227836A1 Surface emitting semiconductor laser array and optical transmission system using the same 有权
标题翻译：表面发射半导体激光阵列和光传输系统使用相同
公开(公告)号：US20060227836A1
公开(公告)日：2006-10-12
申请号：US11261645
申请日：2005-10-31
申请人： Seiya Omori , Akira Sakamoto , Yasuaki Miyamoto , Masahiro Yoshikawa , Kohtaro Handa
发明人： Seiya Omori , Akira Sakamoto , Yasuaki Miyamoto , Masahiro Yoshikawa , Kohtaro Handa
IPC分类号： H01S5/00
CPC分类号： H01S5/423 , H01S5/02212 , H01S5/02284 , H01S5/18311 , H01S5/18394 , H01S5/4081 , H01S2301/18
摘要： A surface emitting semiconductor laser array includes multiple light-emitting portions arranged in a one-dimensional or two-dimensional array, each of the light-emitting portions including, on a substrate, an active region and a current funneling portion between first and second reflection mirrors, and a light-emission aperture above the second reflection mirror, laser beams being simultaneously emitted from the multiple light-emitting portions. At least one of the multiple light-emitting portions has a near field pattern different from those of other light-emitting portions.
摘要翻译：表面发射半导体激光器阵列包括以一维或二维阵列排列的多个发光部分，每个发光部分在基板上包括第一和第二反射之间的有源区和电流漏斗部分反射镜和第二反射镜上方的发光孔，激光束从多个发光部同时发射。多个发光部中的至少一个具有与其他发光部不同的近场图案。

35. 发明授权

US06291369B1 Resin molding 失效
标题翻译：树脂成型
公开(公告)号：US06291369B1
公开(公告)日：2001-09-18
申请号：US09285726
申请日：1999-04-05
申请人： Masahiro Yoshikawa , Katsumi Kameda
发明人： Masahiro Yoshikawa , Katsumi Kameda
IPC分类号： B32B2712
CPC分类号： H05K9/009 , B29C45/1418 , B29C45/14467 , B29C45/14795 , B29C45/14811 , B29C2045/14983 , B29K2713/00 , B29K2995/0011 , B29L2031/3437 , H05K9/0096 , Y10T442/184 , Y10T442/188 , Y10T442/191 , Y10T442/198 , Y10T442/2475
摘要： A soft, meshed, electromagnetic shielding textile sheet is placed in a mold, and the mold is clamped. The soft, meshed electromagnetic shielding textile sheet is shaped so as to conform with the inner surface of the mold when the mold is clamped. Therefore, it is not necessary to fabricate beforehand any insert of a shape corresponding to that of the inner surface of the mold. Since the meshed, electromagnetic shielding textile sheet is impregnated with part of a resin injected into the mold to form an injection-molded resin body, the adhesion of the electromagnetic shielding textile sheet to the injection-molded resin body is improved.
摘要翻译：将软的网状电磁屏蔽纺织片放置在模具中，并且模具被夹紧。柔软的网状电磁屏蔽织物片在模具被夹紧时成形为与模具的内表面一致。因此，不需要事先制造与模具的内表面相对应的形状的插入物。由于网状电磁屏蔽织物片浸渍有注入到模具中的树脂的一部分以形成注射成型的树脂体，所以电磁屏蔽织物片与注射成型树脂体的粘附性得到改善。

36. 发明授权

US5273855A Method of forming multi-color image 失效
标题翻译：形成多色图像的方法
公开(公告)号：US5273855A
公开(公告)日：1993-12-28
申请号：US795552
申请日：1991-11-21
申请人： Hisahiro Omote , Masahiro Yoshikawa , Masahide Takano
发明人： Hisahiro Omote , Masahiro Yoshikawa , Masahide Takano
IPC分类号： G03F3/10 , G03F7/004 , G03C1/805
CPC分类号： G03F3/10
摘要： (Objective) In a color-proof material performed by forming multi-color image on an arbitrary material (ultimate image-receiving material) such as paper using a photosensitive transfer sheet and an intermediate image-receiving sheet, the objective is to bring the quality close to the printed quality formed with inks alone.(Constitution) For the photosensitive sheet, the colored photosensitive layer is formed with a material comprising a synthetic resin emulsion with Tg=-20.degree. to 40.degree. C. such as acrylic ester or ethylene-vinyl acetate copolymer so that the image layer itself has heat-adhesivity. Moreover, the image-receiving layer of the intermediate image-receiving sheet is formed with a material containing a resin cross-linked copolymer of olefin and .alpha., .beta.-unsaturated carboxylic acid with metallic ions and a resin comprising a copolymer of ethylene and vinyl acetate in a proportion by weight of 100/0 to 10/90.(Effect) It becomes possible to transfer the image layer alone onto the ultimate image-receiving material, thus a color-proof close to the print formed with inks alone can be produced.
摘要翻译：（目的）在通过使用光敏转印片和中间图像接收片在任意材料（最终图像接收材料）如纸上形成多色图像而进行的防色光材料中，目的是使质量靠近仅用油墨形成的印刷品质。（构成）对于感光片，着色感光层由Tg = -20〜40℃的合成树脂乳液，例如丙烯酸酯或乙烯 - 乙酸乙烯酯共聚物形成，使得图像层本身具有热粘合性。此外，中间图像接收片的图像接收层由含有烯烃和α，β-不饱和羧酸与金属离子的树脂交联共聚物的材料和包含乙烯和乙酸乙烯酯的共聚物的树脂形成重量比为100/0至10/90。（效果）可以将图像层单独地转印到最终的图像接收材料上，从而可以产生靠近仅由油墨形成的印刷的着色。

37. 发明授权

US08420514B2 Epitaxial silicon wafer and method for manufacturing same 有权
标题翻译：外延硅晶片及其制造方法
公开(公告)号：US08420514B2
公开(公告)日：2013-04-16
申请号：US13382674
申请日：2010-07-01
申请人： Tadashi Kawashima , Masahiro Yoshikawa , Akira Inoue , Yoshiya Yoshida , Kazuhiro Iriguchi , Toshiyuki Isami
发明人： Tadashi Kawashima , Masahiro Yoshikawa , Akira Inoue , Yoshiya Yoshida , Kazuhiro Iriguchi , Toshiyuki Isami
IPC分类号： H01L29/36
CPC分类号： H01L21/3221 , C30B25/186 , C30B25/20 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/02658
摘要： It is an object to provide an epitaxial silicon wafer that is provided with an excellent gettering ability in which a polysilicon layer is formed on the rear face side of a silicon crystal substrate into which phosphorus (P) and germanium (Ge) have been doped. A PBS forming step for growing a polysilicon layer is executed on the rear face side of a silicon crystal substrate into which phosphorus and germanium have been doped at a high concentration to execute a baking treatment. After a surface layer of the silicon crystal substrate is then polished up to a predetermined amount, a silicon epitaxial layer is grown by a CVD method. By the above steps, the number of LPDs (caused by an SF) that occur on the surface of the epitaxial silicon wafer due to the SF can be greatly reduced.
摘要翻译：本发明的目的是提供一种在掺杂有磷（P）和锗（Ge）的硅晶体衬底的背面侧上形成多晶硅层的优异的吸气能力的外延硅晶片。在已经以高浓度掺杂有磷和锗的硅晶体衬底的背面执行用于生长多晶硅层的PBS形成步骤，以进行烘烤处理。然后将硅晶体衬底的表面层抛光至预定量之后，通过CVD法生长硅外延层。通过上述步骤，可以大大减少由于SF而在外延硅晶片的表面上发生的LPD（由SF引起）的数量。

38. 发明申请

US20130034922A1 VERTICAL CAVITY SURFACE EMITTING LASER, VERTICAL CAVITY SURFACE EMITTING LASER DEVICE, OPTICAL TRANSMISSION DEVICE, AND INFORMATION PROCESSING APPARATUS 有权
标题翻译：垂直孔表面发射激光，垂直孔表面发射激光装置，光传输装置和信息处理装置
公开(公告)号：US20130034922A1
公开(公告)日：2013-02-07
申请号：US13650410
申请日：2012-10-12
申请人： Kazutaka Takeda , Masahiro Yoshikawa , Kazuyuki Matsushita
发明人： Kazutaka Takeda , Masahiro Yoshikawa , Kazuyuki Matsushita
IPC分类号： H01L33/10
CPC分类号： H01S5/18311 , H01S5/005 , H01S5/02212 , H01S5/0425 , H01S5/18391 , H01S2301/166 , H01S2301/176
摘要： A vertical cavity surface emitting laser that includes: a substrate; a first semiconductor multilayer reflector; an active region; a second semiconductor multilayer reflector; a columnar structure formed from the second semiconductor multilayer reflector to the first semiconductor multilayer reflector; a current narrowing layer formed inside of the columnar structure and having a conductive region surrounded by an oxidization region; a first electrode formed at a top of the columnar structure, electrically connected to the second semiconductor multilayer reflector and defining a beam window; a first insulating film comprised of a material with a first refractive index and formed on the first electrode to cover the beam window; and a second insulating film comprised of a material with a second refractive index and formed on the first insulating film, of which a radius is smaller than a radius of the conductive region.
摘要翻译：一种垂直腔表面发射激光器，包括：衬底; 第一半导体多层反射器; 活跃区域第二半导体多层反射器; 由所述第二半导体多层反射器形成到所述第一半导体多层反射器的柱状结构; 形成在柱状结构内部并具有由氧化区域包围的导电区域的电流变窄层; 形成在所述柱状结构的顶部的第一电极，电连接到所述第二半导体多层反射器并限定光束窗; 第一绝缘膜，由具有第一折射率的材料构成，并形成在第一电极上以覆盖光束窗; 以及第二绝缘膜，其由具有第二折射率的材料构成，并形成在第一绝缘膜上，半导体的半径小于导电区域的半径。

39. 发明授权

US08031755B2 Surface emitting semiconductor laser and method for fabricating the same 有权
标题翻译：表面发射半导体激光器及其制造方法
公开(公告)号：US08031755B2
公开(公告)日：2011-10-04
申请号：US12559609
申请日：2009-09-15
申请人： Masahiro Yoshikawa
发明人： Masahiro Yoshikawa
IPC分类号： H01S5/183
CPC分类号： H01S5/1833 , H01S5/02284 , H01S5/02288 , H01S5/18313 , H01S5/18333 , H01S5/18336 , H01S5/18347 , H01S5/18391
摘要： A surface emitting semiconductor laser includes: a substrate; a first semiconductor multilayer reflection mirror of a first conduction type; an active region; a second semiconductor multilayer reflection mirror of a second conduction type; a first selectively oxidized layer that is formed in one of the first and second semiconductor multilayer reflection mirrors and includes a first oxidized region selectively oxidized, and a first conductive region surrounded by the first oxidized region; and a second selectively oxidized layer that is formed in one of the first and second semiconductor multilayer reflection mirrors and includes a second oxidized region selectively oxidized, and a second conductive region surrounded by the second oxidized region. A first semiconductor layer next to the first selectively oxidized layer has an Al composition greater than that of a second semiconductor layer next to the second selectively oxidized layer, the first conductive region having a size smaller than that of the second conductive region.
摘要翻译：表面发射半导体激光器包括：基板; 第一导电类型的第一半导体多层反射镜; 活跃区域第二导电类型的第二半导体多层反射镜; 第一选择性氧化层，其形成在第一和第二半导体多层反射镜之一中，并且包括被选择性氧化的第一氧化区域和由第一氧化区域包围的第一导电区域; 以及第二选择性氧化层，其形成在所述第一和第二半导体多层反射镜之一中，并且包括被选择性氧化的第二氧化区域和被所述第二氧化区域包围的第二导电区域。与第二选择氧化层相邻的第一半导体层的Al组成大于第二选择氧化层旁边的第二半导体层的Al组成，第一导电区的尺寸小于第二导电区的尺寸。

40. 发明授权

US07817703B2 Vertical-cavity surface-emitting laser, module, optical transmission device, optical transmission system, free space optical communication device, and free space optical communication system 有权
标题翻译：垂直腔表面发射激光器，模块，光传输设备，光传输系统，自由空间光通信设备和自由空间光通信系统
公开(公告)号：US07817703B2
公开(公告)日：2010-10-19
申请号：US12274439
申请日：2008-11-20
申请人： Masahiro Yoshikawa , Masateru Yamamoto , Takashi Kondo
发明人： Masahiro Yoshikawa , Masateru Yamamoto , Takashi Kondo
IPC分类号： H01S3/08
CPC分类号： H01S5/18311 , H01S5/02284 , H01S5/02288 , H01S5/305
摘要： Provided is a VCSEL that includes a first semiconductor multilayer film reflective mirror of a first conductivity type formed on a substrate and having a first impurity concentration; an active region formed thereon; a second semiconductor multilayer film reflective mirror of a second conductivity type formed on and close to the active region and having a second impurity concentration; a third semiconductor multilayer film reflective mirror of the second conductivity type formed thereon and having a third impurity concentration being higher than the second impurity concentration; and a fourth semiconductor multilayer film reflective mirror of the second conductivity type formed thereon and having a fourth impurity concentration being higher than the second impurity concentration. The reflective mirrors include a pair of a low-Al semiconductor layer and a high-Al semiconductor layer. The Al-composition of the low-Al semiconductor layer in the second reflective mirror is higher than that of the fourth mirror.
摘要翻译：提供一种VCSEL，其包括形成在基板上并具有第一杂质浓度的第一导电类型的第一半导体多层膜反射镜; 形成在其上的有源区; 第二导电类型的第二半导体多层膜反射镜形成在有源区并且靠近有源区并且具有第二杂质浓度; 形成在其上并具有高于第二杂质浓度的第三杂质浓度的第二导电类型的第三半导体多层膜反射镜; 以及形成在其上并具有高于第二杂质浓度的第四杂质浓度的第二导电类型的第四半导体多层膜反射镜。反射镜包括一对低Al半导体层和高Al半导体层。第二反射镜中的低Al半导体层的Al组成高于第四反射镜。

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