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31. 发明申请

US20080174671A1 PHASE ADJUSTING DEVICE AND DIGITAL CAMERA 有权
标题翻译：相位调整装置和数码相机
公开(公告)号：US20080174671A1
公开(公告)日：2008-07-24
申请号：US12019367
申请日：2008-01-24
申请人： Nozomi TANAKA , Masahiro Ogawa
发明人： Nozomi TANAKA , Masahiro Ogawa
IPC分类号： H04N5/228 , H03L7/00
CPC分类号： H04N5/2354 , H04N5/232
摘要： The timing adjustment unit gives a phase adjustment instruction of the pulse to the imaging device so as to converge to an optimum phase of the pulse set based on the calculation results of the luminance level detecting unit and the variance calculating unit. Furthermore, the timing adjustment unit controls the imaging device so that an exposure state of the analog imaged signal is suited for a luminance level detection process by the luminance level detecting unit and the variance calculation process by the variance calculating unit.
摘要翻译：定时调整单元根据亮度水平检测单元和方差计算单元的计算结果向成像装置给出脉冲的相位调整指令，以便收敛到设定的脉冲的最佳相位。此外，定时调整单元控制成像装置，使得模拟成像信号的曝光状态适合亮度级检测单元的亮度水平检测处理和方差计算单元的方差计算处理。

32. 发明申请

US20080025598A1 Device and method for phase adjustment 审中-公开
标题翻译：相位调整装置及方法
公开(公告)号：US20080025598A1
公开(公告)日：2008-01-31
申请号：US11878838
申请日：2007-07-27
申请人： Masahiro Ogawa
发明人： Masahiro Ogawa
IPC分类号： G06K9/00
CPC分类号： H04N5/335 , H04N5/3765
摘要： A luminance level detecting unit calculates a luminance of a digital imaged signal in a plurality of pixels within a first pixel region of an imaging element. A variation calculating unit calculates a variation value indicating signal variation of the digital imaged signal in a plurality of pixels within a second pixel region in the imaging element. A timing adjusting unit adjusts the phase of a pulse based on the result of calculation of the luminance level detecting unit and the result of calculation of the variation calculating unit.
摘要翻译：亮度级检测单元计算成像元件的第一像素区域内的多个像素中的数字成像信号的亮度。变化计算单元计算指示成像元件中的第二像素区域内的多个像素中的数字成像信号的信号变化的变化值。定时调整单元基于亮度级检测单元的计算结果和变化计算单元的计算结果来调整脉冲的相位。

33. 发明申请

US20070196938A1 Nitride semiconductor device and method for fabricating the same 审中-公开
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20070196938A1
公开(公告)日：2007-08-23
申请号：US11594915
申请日：2006-11-09
申请人： Masahiro Ogawa
发明人： Masahiro Ogawa
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/025 , H01L33/145 , H01L33/32 , H01S5/0014 , H01S5/221 , H01S5/2231 , H01S5/305 , H01S5/3063 , H01S2304/04
摘要： A nitride semiconductor device includes: a first nitride semiconductor whose surface is etched; and a second nitride semiconductor formed on the etched surface of the first nitride semiconductor. Of oxygen, carbon, and silicon contained in the interface between the first and second nitride semiconductors, at least silicon has a concentration equal to or less than one tenth the dopant concentration in the first nitride semiconductor.
摘要翻译：氮化物半导体器件包括：其表面被蚀刻的第一氮化物半导体; 以及形成在第一氮化物半导体的蚀刻表面上的第二氮化物半导体。在第一和第二氮化物半导体之间的界面中包含的氧，碳和硅中，至少硅的浓度等于或小于第一氮化物半导体中的掺杂剂浓度的十分之一。

34. 发明授权

US06955159B2 Carbon canister for use in evaporative emission control system of internal combustion engine 有权
标题翻译：用于内燃机蒸发排放控制系统的碳罐
公开(公告)号：US06955159B2
公开(公告)日：2005-10-18
申请号：US10872465
申请日：2004-06-22
申请人： Masahiro Ogawa
发明人： Masahiro Ogawa
IPC分类号： F02M25/08 , F02M33/02
CPC分类号： F02M25/0854 , F02M25/0872 , F02M2025/0845
摘要： First and second chambers are coaxially arranged and have substantially the same cross sectional area. First and second activated charcoal masses are respectively received in the first and second chambers. A labyrinth structure is arranged between respective first ends of the first and second chambers. An atmospheric air inlet port is provided by a second end of the second chamber. A third chamber is arranged beside the coaxially arranged first and second chambers. The third chamber has a first end positioned near a second end of the first chamber and a second end positioned near the second end of the second chamber. A third activated charcoal mass is received in the third chamber. A connector passage extends between the second end of the first chamber and the first end of the third chamber to provide a fluid connection between the first and third chambers. A fuel vapor inlet port is provided by the second end of the third chamber, and a fuel vapor outlet port is also provided by the second end of the third chamber.
摘要翻译：第一和第二腔室同轴布置并具有基本相同的横截面面积。第一和第二活性炭分别分别容纳在第一和第二室中。迷宫结构布置在第一和第二腔室的相应的第一端之间。大气进气口由第二室的第二端提供。第三室被布置在同轴布置的第一和第二室旁边。第三室具有位于第一室的第二端附近的第一端和位于第二室的第二端附近的第二端。在第三室中接收第三活性炭块。连接器通道在第一室的第二端和第三室的第一端之间延伸，以在第一和第三室之间提供流体连接。燃料蒸汽入口由第三室的第二端提供，燃料蒸气出口也由第三室的第二端提供。

35. 发明授权

US06589857B2 Manufacturing method of semiconductor film 有权
公开(公告)号：US06589857B2
公开(公告)日：2003-07-08
申请号：US10100118
申请日：2002-03-19
申请人： Masahiro Ogawa , Daisuke Ueda , Masahiro Ishida
发明人： Masahiro Ogawa , Daisuke Ueda , Masahiro Ishida
IPC分类号： H01L2120
CPC分类号： C30B33/00 , C30B29/403 , C30B29/406 , C30B29/60 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/0079 , H01S5/32341 , H01S2304/12
摘要： A first semiconductor film made of a nitride semiconductor is grown through epitaxial growth on a light transmitting substrate. A thermal decomposition layer is disposed in a space between the substrate and the first semiconductor film by irradiating laser light to the first semiconductor film from the back surface of the substrate. After a second semiconductor film made of a nitride semiconductor is grown through epitaxial growth while the first semiconductor film is placed on the substrate, the temperature of the substrate is lowered to room temperature. Then, by separating and removing the substrate from the first and second semiconductor films, it is possible to obtain a nitride semiconductor substrate having an area substantially as large as the area of the substrate.

36. 发明授权

US06566231B2 Method of manufacturing high performance semiconductor device with reduced lattice defects in the active region 失效
标题翻译：制造有源区域中具有减小的晶格缺陷的高性能半导体器件的方法
公开(公告)号：US06566231B2
公开(公告)日：2003-05-20
申请号：US09790908
申请日：2001-02-23
申请人： Masahiro Ogawa , Kenji Orita , Masahiro Ishida , Shinji Nakamura , Osamu Imafuji , Masaaki Yuri
发明人： Masahiro Ogawa , Kenji Orita , Masahiro Ishida , Shinji Nakamura , Osamu Imafuji , Masaaki Yuri
IPC分类号： H01L2176
CPC分类号： H01L33/007 , H01L21/02381 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02546 , H01L21/02642 , H01L21/02647
摘要： A first semiconductor layer is epitaxially grown on a semiconductor substrate and patterned to form concave and convex portions. A second semiconductor layer is formed on the first semiconductor layer using a top epitaxial mask covering the top surface of the convex portion. Lattice defects D propagating from the first semiconductor layer exist only in a region located above the center of the concave portion (a defect region Ra), while in the other region (a low defect region Rb) lattice defects D propagating from the first semiconductor layer hardly exist.
摘要翻译：第一半导体层在半导体衬底上外延生长并图案化以形成凹凸部分。使用覆盖凸部的顶面的顶部外延掩模，在第一半导体层上形成第二半导体层。从第一半导体层传播的晶格缺陷D仅存在于位于凹部的中心以上的区域（缺陷区域Ra），而在另一区域（低缺陷区域Rb）中，从第一半导体层传播的缺陷D 几乎不存在

37. 发明授权

US06017031A Document feeder 失效
标题翻译：送纸器
公开(公告)号：US06017031A
公开(公告)日：2000-01-25
申请号：US779668
申请日：1997-01-07
申请人： Yukio Oosawa , Masahiro Ogawa , Toshihiro Kubodera
发明人： Yukio Oosawa , Masahiro Ogawa , Toshihiro Kubodera
IPC分类号： G03G15/00 , B65H3/06 , B65H3/52 , B65H3/56
CPC分类号： B65H3/56
摘要： A document feeder of the invention is formed of a sheet feeding tray for receiving sheets or documents thereon; a feeding device for feeding the sheets on the sheet feeding tray in order; and a feeding roller for feeding the sheets transferred from the feeding device in a sheet feeding direction and having at least one space extending in a direction perpendicular to the sheet feeding direction. The document feeder further includes at least first and second separating devices. The first separating device is formed of a frictional member having a frictional coefficient relative to a sheet greater than that between the sheets. The first separating device contacts the feeding roller and permits one sheet to pass therebetween. The second separating device is formed of an elastic member and has at least one tongue piece with a forward end. The forward end is located in the space of the feeding roller for separating the sheets between the forward end and the feeding roller. Therefore, when the sheets are separated, a back surface of the sheet is not smudged. Also, a misfeed or a double feed of the sheets does not take place, and separation of the sheets can be smoothly carried out.
摘要翻译：本发明的送纸器由用于在其上接收纸张或文件的供纸盘形成; 进给装置，用于依次将纸张供给在供纸托盘上; 以及进给辊，用于将从进给装置传送的片材沿片材进给方向进给，并且具有沿与片材进给方向垂直的方向延伸的至少一个空间。文档馈送器还包括至少第一和第二分离装置。第一分离装置由相对于片材的摩擦系数大于片材之间的摩擦系数的摩擦构件形成。第一分离装置接触进料辊并允许一片通过。第二分离装置由弹性构件形成，并且具有至少一个具有前端的舌片。前端位于进给辊的空间中，用于在前端和进给辊之间分离纸张。因此，当片材分离时，片材的后表面不被弄脏。此外，不会发生纸张的卡纸或双重进给，并且可以平稳地进行纸张的分离。

38. 发明授权

US5823060A Lead wire processing device for industrial robot 失效
标题翻译：工业机器人引线加工装置
公开(公告)号：US5823060A
公开(公告)日：1998-10-20
申请号：US687592
申请日：1996-07-31
申请人： Atsushi Ichibangase , Masahiro Ogawa
发明人： Atsushi Ichibangase , Masahiro Ogawa
IPC分类号： B25J19/00 , B25J11/00
CPC分类号： B25J19/0029 , Y10T74/20311
摘要： A lead wire distribution processing structure includes separated partition plates (16) standing on the upper surface of a bottom section (12) of a swivel base (11) at a position closer to the outer periphery thereof than an arm (14) within a space (13), wherein partition plates (16) have lead wire penetration sections (17) at a level above bottom section (12), which is provided with lead wire penetration holes (18) at positions outward from partition plate (16) thereby allowing lead wires (15) drawn out of the lower section of arm (14) within space (13) to run downward and arrive at a position below lead wire penetration sections (17) of partition plates (16), thus causing them to separate from each other and extend upwardly so that they extend in opposite directions to enter the interior of a fixed base through lead wire penetration holes (18). It is possible to simply and reliably attain drip protection without any significant modifications of the swivel base in structure.
摘要翻译： PCT No.PCT / JP95 / 02494 Sec。 371日期：1996年7月31日 102（e）日期1996年7月31日PCT提交1995年12月6日PCT公布。出版物WO96 / 17714 日期1996年6月13日引线分配处理结构包括在比臂部更靠近其外周的位置处站立在旋转基座（11）的底部（12）的上表面上的分离的隔板（16） 14）在空间（13）内，其中隔板（16）具有位于底部（12）上方的导线穿透部分（17），其在隔板的外侧设置有引线穿透孔（18）（16），从而允许在空间（13）内从臂（14）的下部引出的引线（15）向下运行并到达分隔板（16）的引线穿透部分（17）下方的位置，因此使它们彼此分离并向上延伸，使得它们沿相反方向延伸，以通过引线穿透孔（18）进入固定基座的内部。可以简单可靠地获得滴水保护，而不会在结构上对旋转底座进行任何显着的修改。

39. 发明授权

US4632849A Method for making a fine powder of a metal compound having ceramic coatings thereon 失效
标题翻译：制备其上具有陶瓷涂层的金属化合物的细粉末的方法
公开(公告)号：US4632849A
公开(公告)日：1986-12-30
申请号：US692423
申请日：1985-01-18
申请人： Masahiro Ogawa , Susumu Abe
发明人： Masahiro Ogawa , Susumu Abe
IPC分类号： C04B35/628 , B22F1/02 , B22F9/12 , C01B21/068 , C04B35/584 , C04B35/626 , C04B35/64 , C23C14/22 , B05D7/00
CPC分类号： C23C14/223 , B22F1/02 , B22F9/12 , C04B35/584 , C04B35/64 , C23C14/22
摘要： A method for making fine powder of a metallic compound coated with ceramics is described. In the method, a gaseous mixture of at least one metal vapor constituting one component of a metallic compound and a carrier gas for the at least one metal vapor is passed at a speed of 50 to 2000 m/second into another element constituting the other element of the metallic compound or in an atmosphere of a gas containing the other element, which is heated to a temperature of not larger than 0.8 time as low as a melting point of the at least one metal so that the metal vapor and another element are reacted with each other while rapidly cooling, thereby obtaining a fine powder of a metallic compound. The metallic compound fine powder is further passed into other metal vapor or other metallic compound vapor to cover the metallic compound fine powder with the film of the other metal or metallic compound.
摘要翻译：描述了用陶瓷涂覆金属化合物的细粉末的方法。在该方法中，将构成金属化合物的一种成分的至少一种金属蒸气和至少一种金属蒸汽的载气的气体混合物以50〜2000m /秒的速度通入构成其他元素的另一元素的金属化合物，或者在含有另一种元素的气体的气氛中，其被加热至不低于至少一种金属的熔点的0.8倍以下的温度，使得金属蒸气和另一种元素反应同时快速冷却，从而获得金属化合物的细粉末。金属化合物细粉进一步通过其它金属蒸气或其它金属化合物蒸气，以另一种金属或金属化合物的膜覆盖金属化合物细粉末。

40. 发明授权

US4610857A Method for making ultra-fine ceramic particles 失效
标题翻译：制造超细陶瓷颗粒的方法
公开(公告)号：US4610857A
公开(公告)日：1986-09-09
申请号：US701511
申请日：1985-02-14
申请人： Masahiro Ogawa , Susumu Abe
发明人： Masahiro Ogawa , Susumu Abe
IPC分类号： C01G1/02 , B01J8/00 , B01J8/02 , B01J12/00 , B01J19/08 , C01B13/20 , C01B13/28 , C01B13/32 , C01B21/06 , C01B21/068 , C01B21/072 , C01B21/076 , C01B31/30 , C01B33/16 , C01B33/18 , C01F5/04 , C01F7/42
CPC分类号： B82Y30/00 , B01J12/002 , C01B13/20 , C01B21/06 , C01B31/30 , C01B33/181 , C01B21/0602 , C01B21/0612 , C01B21/0617 , C01B21/062 , C01B21/0637 , C01B21/068 , C01B21/072 , C01B21/076 , C01P2004/64
摘要： A method for making ultra-fine ceramic particles, in which metal powder constituting a portion of the ultra-fine ceramic particles intended for production is injected at a rate of not less than 70 grams per minute into a plasma jet so that the metal powder is vaporized. The vaporized metal powder is then mixed with a reactive gas, which includes an element consituting the other portion of the ultra-fine ceramic particles, filled in the surrounding area of the plasma jet, and thereby the vaporized metal powder and the reactive gas produce a synthetic reaction. The ultra-fine ceramic particles are produced continuously because of the reaction flame.
摘要翻译：一种制造超细陶瓷颗粒的方法，其中构成用于生产的超细陶瓷颗粒的一部分的金属粉末以不低于70克/分钟的速率注入等离子体射流中，使得金属粉末为蒸发然后将蒸发的金属粉末与反应性气体混合，反应气体包括填充在等离子体射流的周围区域中的超细陶瓷颗粒的另一部分的元素，从而蒸发的金属粉末和反应性气体产生合成反应。由于反应火焰，超细陶瓷颗粒连续生产。

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