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    • 36. 发明授权
    • Thin film transistor
    • 薄膜晶体管
    • US4843438A
    • 1989-06-27
    • US235728
    • 1988-08-19
    • Mitsuhiro KodenHirohisa TanakaKohzo Yano
    • Mitsuhiro KodenHirohisa TanakaKohzo Yano
    • H01L29/417H01L29/45H01L29/49
    • H01L29/41733H01L29/458H01L29/4908
    • A thin film transistor which includes an insulative substrate, and a gate electrode, a gate isulating film, a semi-conductor film, a source electrode, and a drain electrode, which are all laminated in that order onto the insulating substrate in the form of an array. The gate electrode is made of tantalum, and the gate insulating film is formed into a double-layered construction of an anodized tantalum film and a silicon nitride film, while the semi-conductor film is provided at each intersection between the gate electrode and the source electrode.This application is a continuation of application Ser. No. 057,743 filed on June 3, 1987, abandoned, which is a continuation of application Ser. No. 797,660 filed on Nov. 13, 1985, now abandoned.
    • 一种薄膜晶体管,其包括绝缘基板,以及栅极电极,栅极隔离膜,半导体膜,源电极和漏电极,它们均按顺序层叠在绝缘基板上,形式为 数组。 栅电极由钽制成,并且栅极绝缘膜形成为阳极氧化钽膜和氮化硅膜的双层结构,而半导体膜设置在栅电极和源极之间的每个交叉处 电极。 这个应用程序是应用程序的延续。 1987年6月3日提交的第057,743号被遗弃,这是继续申请。 1985年11月13日提交的第797,660号,现已放弃。